Datasheet TPC8207 Datasheet (TOSHIBA)

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

TPC8207

Lithium Ion Battery Applications

Notebook PC Applications

Portable Equipment Applications

• Small footprint due to small and thin package

• Low drain-source ON resistance: R

• High forward transfer admittance: |Y

• Low leakage current: I

• Enhancement-mode: V

= 10 µA (max) (VDS = 20 V)

DSS

= 0.5~1.2 V (VDS = 10 V, ID = 200 µA)

th

Maximum Ratings

Characteristics Symbol Rating Unit

Drain-source voltage V

Drain-gate voltage (RGS = 20 kΩ) V

Gate-source voltage V

Drain current

dissipation (t = 10 s)

(Note 2a)

dissipation (t = 10 s)

(Note 2b)

Single pulse avalanche energy (Note 4)

Avalanche current IAR 6 A

Repetitive avalanche energy Single-device value at dual operation

(Note 2a, 3b, 5)

Channel temperature Tch 150 °C

Storage temperature range T

(Ta = 25°C)

DC (Note 1) ID 6

Pulse (Note 1) I

Single-device operation (Note 3a)

Single-device value at dual operation (Note 3b)

Single-device operation (Note 3a)

Single-device value at dual operation (Note 3b)

= 16 mΩ (typ.)

DS (ON)

| = 11 S (typ.)

fs

20 V

DSS

20 V

DGR

±12 V

GSS

24

DP

P

1.5 Drain power

D (1)

P

1.1

D (2)

0.75 Drain power

P

D (1)

P

0.45

D (2)

46.8 mJ

E

AS

E

0.1 mJ

AR

stg

55~150 °C

−

A

W

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-6J1E

Weight: 0.08 g (typ.)

Circuit Configurati on

8 7 6 5

1 2 3 4

Note 1, Note 2, Note 3, Note 4 and Note 5: See the next page.

This transistor is an electrostatic-sensitive device. Please handle with caution.

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Thermal Characteristics

Characteristics Symbol Max Unit

TPC8207

Thermal resistance, channel to ambient

10 s) (Note 2a)

(t

=

Thermal resistance, channel to ambient

= 10 s) (Note 2b)

(t

Single-device operation

(Note 3a)

Single-device value at dual operation

(Note 3b)

Single-device operation

(Note 3a)

Single-device value at dual operation

(Note 3b)

R

th (ch-a) (1)

R

th (ch-a) (2)

R

th (ch-a) (1)

R

th (ch-a) (2)

83.3

°C/W

114

167

°C/W

278

Marking

(Note 6)

TPC8207

Part No. (or abbreviation code) Lot No.

A line indicates lead (Pb)-free package or lead (Pb)-free finish.

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2:

a) Device mounted on a glass-epoxy board (a) b) Device mounted on a glass-epoxy board (b)

FR-4

× 25.4 × 0.8

25.4 (Unit: mm)

(a)

(b)

Note 3:

a) The power dissipation and thermal resistance values are shown for a single device

(During single-device operation, power is only applied to one device.).

b) The power dissipation and thermal resistance values are shown for a single device

(During dual operation, power is evenly applied to both devices.).

Note 4: V

= 16 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = 6 A

DD

Note 5: Repetitive rating: pulse width limited by max channel temperature.

Note 6: • on lower right of the marking indicates Pin 1.

※ Weekly code: (Three digits)

Week of manufacture (01 for the first week of a year, : sequential number up to 52 or 53)

Year of manufacture (The last digit of a year)

FR-4

× 25.4 × 0.8

25.4 (Unit: mm)

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TPC8207

∼

Electrical Characteristics

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current I

Drain cut-OFF current I

Drain-source breakdown voltage

Gate threshold voltage Vth VDS = 10 V, ID = 200 µA 0.5

Drain-source ON resistance R

Forward transfer admittance |Yfs| VDS = 10 V, ID = 3.0 A 5.5 11 ⎯ S

Input capacitance C

Reverse transfer capacitance C

Output capacitance C

Rise time tr ⎯ 6 ⎯

Turn-ON time ton

Switching time

Fall time tf ⎯ 22 ⎯

Turn-OFF time t

Total gate charge (gate-source plus gate-drain)

Gate-source charge 1 Q

Gate-drain (“miller”) charge Qgd

(Ta = 25°C)

VGS = ±10 V, VDS = 0 V ⎯ ⎯ ±10 µA

GSS

VDS = 20 V, VGS = 0 V ⎯ ⎯ 10 µA

DSS

V

(BR) DSSID

V

(BR) DSXID

DS (ON)

iss

rss

oss

off

⎯ 22 ⎯

Q

g

gs1

= 10 mA, VGS = 0 V 20 ⎯ ⎯

= 10 mA, VGS = −12 V 8

VGS = 2.0 V, ID = 4.2 A

VGS = 2.5 V, ID = 4.2 A ⎯ 19 30

V

= 4.0 V, ID = 4.8 A ⎯ 16 20

GS

⎯ 2010 ⎯

= 10 V, VGS = 0 V, f = 1 MHz

V

⎯ 210 ⎯

DS

5 V

V

GS

0 V

1%, tw = 10 µs

Duty

V

16 V, VGS = 5 V, ID = 6 A

DD

⎯ 3.2 ⎯

ID = 3 A

V

OUT

Ω

4.7

Ω

3.3

=

L

R

V

10 V

DD

⎯

⎯ 4.7 ⎯

⎯

1.2 V

⎯

22 45

240 ⎯

14 ⎯

94 ⎯

⎯

Source-Drain Ratings and Characteristics

(Ta = 25°C)

m

pF

ns

nC

V

Ω

Characteristics Symbol Test Condition Min Typ. Max Unit

Drain reverse current Pulse (Note 1) I

Forward voltage (diode) V

DRP

IDR = 6 A, VGS = 0 V ⎯ ⎯ −1.2 V

DSF

⎯ ⎯

3

24 A

⎯

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TPC8207

10

8

(A)

D

6

2 4 6

4

Drain current I

2

0

0 0.2 0.4 0.6

Drain-source voltage VDS (V)

20

16

(A)

D

12

8

Drain current I

4

0

0 1 2 3 4 5

100

25

Gate-source voltage VGS (V)

1000.0

⎪ (S)

fs

100.0

10.0

– VDS

I

D

Common source, Ta = 25°C, Pulse test

1.7

1.65

1.6

1.55

1.5

1.4

VGS = 1.3 V

0.8 1

– VGS

I

D

Common source

VDS = 10 V

Pulse test

Ta = −55°C

| – ID

|Y

fs

Common source

VDS = 10 V

Pulse test

25

−55

Ta = 100°C

– VDS

I

20

10

6

2

4

8

16

(A)

D

12

8

Drain current I

4

0

0123 4 5

Drain-source voltage VDS (V)

D

Common source

1.9

Ta = 25 °C

Pulse test

1.8

VGS = 1.3 V

1.7

1.65

1.6

1.55

1.5

1.4

– VGS

V

1.0

0.8

DS

Common source Ta = 25°C

Pulse test

(V)

DS

0.6

0.4

3

0.2

Drain-source voltage V

0

0 2 4 6 8 10 12

Gate-source voltage VGS (V)

4

ID = 6 A

DS (ON)

VGS = 2 V

– ID

Common source Ta = 25°C

Pulse test

4

2.5

6

1000

R

100

(mΩ)

DS (ON)

R

10

Drain-source ON resistance

Forward transfer admittance ⎪Y

1.0

0.1 1.0 10.0 100.0

Drain current ID (A)

1

0.1 1 10 100

Drain current ID (A)

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TPC8207

50

40

30

(mΩ)

20

DS (ON)

R

Drain-source ON resistance

10

ID = 1.5 A, 3A, 6A

0

−80 −40 0 40 80 120 160

Ambient temperature Ta (°C)

10000

1000

100

Capacitance C (pF)

10

0.1 1 10 100

Capacitance – V

Drain-source voltage VDS (V)

2.0

(W)

1.5

D

1.0

0.5

Drain power dissipation P

Device mounted on a glass-epoxy board (a)

(1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b)

(1)

(2)

(3)

(4)

R

– Ta

DS (ON)

VGS = 2.5 V

ID = 6 A

1.5A, 3A

ID = 1.5A, 3 A, 6A

Common source

Pulse test

VGS = 2 V

VGS = 4 V

DS

C

iss

C

oss

C

rss

Common source

Ta = 25°C

VGS = 0 V f = 1 MHz

– Ta

P

D

(Note 2a)

Device mounted on a glass-epoxy board (b)

(3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s

(Note 2b)

– VDS

I

100

(A)

DR

5, 10

10

1

Drain reverse current I

0.1

−0 −0.2 −0.4 −0.6 −0.8 −1 −1.2

Drain-source voltage VDS (V)

DR

3

1

VGS = 0 V

Common source Ta = 25°C

Pulse test

– Ta

V

1.4

1.2

(V)

th

1.0

0.8

0.6

0.4

Gate threshold voltage V

0.2

0

−80

−40 0 40 80 120 160

th

Common source

VDS = 10 V

ID = 200 µA

Pulse test

Ambient temperature Ta (°C)

Dynamic input/output characteristics

V

DS

16

(V)

DS

12

Drain-source voltage V

8

4

8 V

4 V

V

GS

VDD = 16 V

Common source

ID = 6 A Ta = 25°C

Pulse test

8

(V)

GS

6

4

2

Gate-source voltage V

0

0 50 100 150 200

Ambient temperature Ta (°C)

0

0 8 16 24 32

0

Total gate charge Qg (nC)

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TPC8207

1000

Device mounted on a glass-epoxy board (a) (Note 2a) ( 1) Single-device operation (Note 3a)

( 2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b)

( 3) Single-device operation (Note 3a)

( 4) Single-device value at dual operation (Note 3b)

100

10

(°C/W)

th

r

1

Normalized transient thermal impedance

100

50

ID max (pulse) *

30

10

5

(A)

3

D

1

0.5

0.3

Drain current I

0.1

* Single pulse Ta = 25°C

0.05

0.03

Curves must be derated linearly with increase in temperature.

0.01

0.01 0.03 0.1 0.3 1 3 10 10030

0

0.001 0.01 0.1 1 10 100 1000

Pulse width tw (S)

Safe operating area

Single-device value at dual

operation (Note 3b)

DSS

1 ms *

max

10 ms *

V

Drain-source voltage VDS (V)

r

− tw

th

(4)

(3)

(2)

(1)

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TPC8207

RESTRICTIONS ON PRODUCT USE

•

The information contained herein is subject to change without notice.

•

The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

•

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..

•

The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.

•

TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.

030619EAA

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