Page 1
查询TPC8111供应商
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
TPC8111
TPC8111
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
• Small footprint due to small and thin package
• Low drain-source ON resistance: R
• High forward transfer admittance: |Yfs| = 23 S (typ.)
• Low leakage current: I
• Enhancement-mode: V
Maximum Ratings
Characteristics Symbol Rating Unit
Drain-source voltage V
Drain-gate voltage (RGS = 20 kΩ) V
Gate-source voltage V
Drain current
Drain power dissipation (t = 10 s)
(Note 2a)
Drain power dissipation (t = 10 s)
(Note 2b)
Single pulse avalanche energy
(Note 3)
Avalanche current IAR −11 A
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature Tch 150 °C
Storage temperature range T
= −10 µA (max) (VDS = −30 V)
DSS
= −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
th
(Ta = 25°C)
DC (Note 1) ID −11
Pulse (Note 1) IDP −44
DS (ON)
= 8.1 mΩ (typ.)
−30 V
DSS
−30 V
DGR
±20 V
GSS
1.9 W
P
D
1.0 W
P
D
31.5 mJ
E
AS
0.19 mJ
E
AR
−55 to 150 °C
stg
A
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
8 6
7 5
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
1
1 2 3
4
2002-03-25
Page 2
Thermal Characteristics
Characteristics Symbol Max Unit
TPC8111
Thermal resistance, channel to ambient
(t = 10 s) (Note 2a)
Thermal resistance, channel to ambient
(t = 10 s) (Note 2b)
R
th (ch-a)
R
th (ch-a)
65.8 °C/W
125 °C/W
Marking
(Note 5)
TPC8111
※
Type
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2:
(a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
(a)
Note 3: V
= −24 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = −11 A
DD
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: • on lower left of the marking indicates Pin 1.
※ shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of
manufacture: January to December are denoted by letters A to L respectively.)
(b)
2
2002-03-25
Page 3
TPC8111
<
Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
Drain cut-OFF current I
Drain-source breakdown voltage
Gate threshold voltage Vth VDS = −10 V, ID = −1 mA −0.8 −2.0 V
Drain-source ON resistance R
Forward transfer admittance |Yfs| VDS = −10 V, ID = −5.5 A 11 23 S
Input capacitance C
Reverse transfer capacitance C
Output capacitance C
Rise time tr 18
Turn-ON time ton 23
Switching time
Fall time tf 109
Turn-OFF time t
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1 Q
Gate-drain (“miller”) charge Qgd
(Ta ==== 25°C)
VGS = ±16 V, VDS = 0 V ±10 µA
GSS
VDS = −30 V, VGS = 0 V −10 µA
DSS
V
(BR) DSS
V
(BR) DSX
ID = −10 mA, VGS = 0 V −30
ID = −10 mA, VGS = 20 V −15
VGS = −4 V, ID = −5.5 A 12 18
DS (ON)
5710
iss
560
rss
oss
off
Q
107
g
12
gs1
= −10 V, ID = −5.5 A 8.1 12
V
GS
VDS = −10 V, VGS = 0 V, f = 1 MHz
590
VGS
Duty
V
DD
I
= −11 A
D
0 V
−10 V
1%, t
=
∼
−24 V, V
−
w
4.7 Ω
= 10 µs
= 10 V,
GS
ID = −5.5 A
V
= 2.7 Ω
L
R
∼
V
−15 V
−
DD
OUT
396
20
Source-Drain Ratings and Characteristics
(Ta ==== 25°C)
V
mΩ
pF
ns
nC
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain reverse current Pulse (Note 1) I
Forward voltage (diode) V
−44 A
DRP
IDR = −11 A, VGS = 0 V 1.2 V
DSF
3
2002-03-25
Page 4
TPC8111
– VDS
I
−10
−8
(A)
D
−6
−3 −10
−5 −4
−4
Drain current I
−2
0
0 −2
Drain-source voltage VDS (V)
−40
−30
(A)
D
−20
D
−2.5
−2.4
−4 −6 −8 −10
Common source
Ta = 25°C
Pulse test
−2.3
−2.2
−2.1
VGS = −2 V
– VGS
I
D
Common source
VDS = −10 V
Pulse test
−20
−16
(A)
D
−12
−8
−10
−3
−2.7
−5
−4
Drain current I
−4
0
0 −4
Drain-source voltage VDS (V)
−0.5
−0.4
(V)
DS
−0.3
−0.2
– VDS
I
D
−2.6
−8 −12 −16 −20
V
– VGS
DS
Common source
Ta = 25°C
Pulse test
−2.5
Common source
Ta = 25°C
Pulse test
−2.4
−2.3
−2.2
VGS = −2.1 V
Drain current I
−10
25
0
0 −1
100
Ta = −55°C
−2 −3 −4 −5
Gate-source voltage VGS (V)
| – ID
|Y
100
50
| (S)
30
fs
10
5
3
1
0.5
Forward transfer admittance |Y
0.3
−0.1 −1 −10 −50
fs
Ta = −55°C
100
Drain current ID (A)
25
Common source
VDS = −10 V
Pulse test
−30 −3 −5 −0.3 −0.5
−0.1
Drain-source voltage V
−2.5
0
0 −4
ID = −11 A
−8 −12 −16 −20
−5.5
Gate-source voltage VGS (V)
DS (ON)
VGS = −4.5 V
−10
– ID
Common source
Ta = 25°C
Pulse test
−30 −3 −5 −0.3 −0.5
100
R
50
30
10
(mΩ)
5
3
DS (ON)
R
Drain-source ON resistance
1
0.5
0.3
−0.1 −1 −10 −50
Drain current ID (A)
4
2002-03-25
Page 5
TPC8111
25
Common source
Pulse test
20
15
Drain-source ON resistance
(mΩ)
DS (ON)
R
VGS = −4.5 V
10
5
0
−80 −40 0 40 120 160 80
−10
Ambient temperature Ta (°C)
Capacitance – V
50000
30000
10000
5000
3000
1000
Capacitance C (pF)
500
Common source
300
VGS = 0 V
f = 1 MHz
Ta = 25°C
100
−0.1 −1 −10
R
– Ta
DS (ON)
ID = −11 A, −5.5 A, −2.5 A
ID = −11 A, −5.5 A, −2.5 A
DS
I
– VDS
−10
−3
DR
−1
−5
VGS = 0 V
Common source
Ta = 25°C
Pulse test
−100
(A)
DR
−10
−1
Drain reverse current I
−0.1
0
0.2 0.4 0.6 0.8 1
Drain-source voltage VDS (V)
−2.5
−2
(V)
th
C
iss
C
oss
C
rss
−100 −0.3 −3 −30
−1.5
−1
−0.5
Gate threshold voltage V
0
−80 −40 0 40 120 160 80
Ambient temperature Ta (°C)
V
– Ta
th
Common source
VDS = −10 V
ID = −1 mA
Pulse test
Drain-source voltage VDS (V)
– Ta
P
2.0
(1)
1.6
(W)
D
1.2
(2)
0.8
0.4
D
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
t = 10 s
Drain power dissipation P
0
0 50
25 75 125
100 150 175
Ambient temperature Ta (°C)
5
Dynamic Input/Output Characteristics
−30
−25
(V)
DS
Drain-source voltage V
VDD = −24 V
−20
−15
−10
VDS
−12
−6
−5
0
0 20 40 60 80
Total gate charge Qg (nC)
−12
VGS
−6
VDD = −24 V
Common source
ID = −11 A
Ta = 25°C
Pulse test
100 120
2002-03-25
140
−12
−10
−8
−6
−4
−2
0
(V)
GS
Gate-source voltage V
Page 6
TPC8111
− tw
r
1000
(1) Device mounted on a glass-epoxy
board (a) (Note 2a)
(°C/W)
th
(2) Device mounted on a glass-epoxy
board (b) (Note 2b)
t = 10 s
100
th
(2)
(1)
10
1
Normalized transient thermal impedance r
0.1
0.001 0.01 0.1 1 10 100 1000
Pulse width tw (s)
Single pulse
Safe Operating Area
100
ID max (pulse)*
1 ms*
10
(A)
D
1
10 ms*
Drain current I
0.1
*: Single pulse Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
0.01
0.01 0.1 1 10 100
Drain-source voltage VDS (V)
V
max
DSS
6
2002-03-25
Page 7
TPC8111
A
RESTRICTIONS ON PRODUCT USE
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
000707EA
7
2002-03-25
Loading...