Datasheet TPC8108 Datasheet (TOSHIBA)



查询TPC8108供应商

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)

TPC8108

Lithium Ion Battery Applications

Notebook PC Applications

Portable Equipment Applications

• Small footprint due to small and thin package

• Low drain-source ON resistance: R

DS (ON)

• High forward transfer admittance: |Y

• Low leakage current: I

• Enhancement-mode: V

= −10 µA (max) (VDS = −30 V)

DSS

= −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)

th

Maximum Ratings

Characteristics Symbol Rating Unit

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation (t = 10 s)

(Note 2a)

Drain power dissipation (t = 10 s)

(Note 2b)

Single pulse avalanche energy

Avalanche current I

Repetitive avalanche energy

Channel temperature

Storage temperature range

(Ta = 25°C)

= 20 kΩ)

GS

DC (Note 1) I

Pulse (Note 1) I

(Note 3)

(Note 2a) (Note 4)

= 9.5 mΩ (typ.)

| = 24 S (typ.)

fs



V

−30 V

DSS

V

−30 V

DGR

V

±20 V

GSS

−11

D

−44

DP

1.9 W

P

D

1.0 W

P

D

157 mJ

E

AS

−11 A

AR

0.19 mJ

E

AR

T

150 °C

ch

T

−55 to 150 °C

stg

Unit: mm

A

JEDEC ―

JEITA ―

TOSHIBA 2-6J1B

Weight: 0.080 g (typ.)

Circuit Configuration

8 6

7 5

Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the

next page.

This transistor is an electrostatic sensitive device. Please handle with caution.

1

1 2 3

4

2002-03-12

Thermal Characteristics

Characteristics Symbol Max Unit

TPC8108

Thermal resistance, channel to ambient

(t = 10 s) (Note 2a)

Thermal resistance, channel to ambient

(t = 10 s) (Note 2b)

R

65.8 °C/W

th (ch-a)

125 °C/W

th (ch-a)

Marking

(Note 5)

TPC8108

※

TYPE

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)

FR-4

25.4 × 25.4 × 0.8

(unit: mm)

FR-4

25.4 × 25.4 × 0.8

(unit: mm)

(a)

(b)

Note 3: V

= −24 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = −11 A

DD

Note 4: Repetitive rating; pulse width limited by maximum channel temperature

Note 5: • on lower left of the marking indicates Pin 1. ※ shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of

manufacture: January to December are denoted by letters A to L respectively.)

2

2002-03-12

TPC8108

<

Electrical Characteristics

(Ta ==== 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current I

Drain cut-OFF current I

Drain-source breakdown voltage

GSS

DSS

V

(BR) DSS

V

(BR) DSX

V

I

D

I

D

Gate threshold voltage Vth V

Drain-source ON resistance R

DS (ON)

V

Forward transfer admittance |Yfs| V

Input capacitance C

Reverse transfer capacitance C

Output capacitance C

Rise time t

Turn-ON time t

 3510 

iss

V

 250 

rss

oss

 7 

r

 16 

on

Switching time

Fall time t

Turn-OFF time t

Total gate charge (gate-source plus gate-drain)

Gate-source charge 1 Q

 66 

f

off

Q

Duty

 77 

g

V I

 7.0 

gs1

D

Gate-drain (“miller”) charge Qgd

Source-Drain Ratings and Characteristics

= ±16 V, VDS = 0 V   ±10 µA

GS

= −30 V, VGS = 0 V   −10 µA

DS

= −10 mA, VGS = 0 V −30  

V

= −10 mA, VGS = 20 V −15  

= −10 V, ID = −1 mA −0.8  −2.0 V

DS

= −4 V, ID = −5.5 A  18.5 23

GS

= −10 V, ID = −5.5 A  9.5 13

GS

= −10 V, ID = −5.5 A 12 24  S

DS

= −10 V, VGS = 0 V, f = 1 MHz

DS

mΩ

pF

 600 

I

= −5.5 A

VGS

0 V

−10 V

D

V

OUT

ns

= 2.7 Ω

L

R

∼

V

−15 V

−

DD

 230 

nC

1%, t

=

∼

−24 V, V

−

DD

= −11 A

4.7 Ω

= 10 µs

w

GS

= −10 V,

 20 

(Ta ==== 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Drain reverse current Pulse (Note 1) I

Forward voltage (diode) V

   −44 A

DRP

I

DSF

= −11 A, VGS = 0 V   1.2 V

DR

3

2002-03-12

TPC8108

−20

−16

(A)

D

−12

Drain current I

−10

−8

−6

−8

−4

0 −0.2 0 −0.4 −0.6 −0.8 −1.0

Drain-source voltage VDS (V)

−50

−40

(A)

D

−30

−20

Drain current I

−10

0

0 −1

25

100

Gate-source voltage VGS (V)

100

 (S)

30

fs

10

3

1

Forward transfer admittance Y

0.3

−0.1 −0.3 −1 −3 −10 −30 −100

Drain current ID (A)

– VDS

I

D

−4

−3

−2.8

−2.6

Common source Ta = 25°C Pulse test

−2.4

−2.2

V

= −2 V

GS

– VGS

I

D

Common source V

= −10 V

DS

Pulse test

Ta = −55°C

−2 −3 −4 −5

| – ID

|Y

fs

25

Ta = −55°C

100

Common source V

= −10 V

DS

Pulse test

– VDS

I

−50

−10

−4

−6

−40

(A)

D

−30

−20

Drain current I

−10

0

0 −1

−8

Drain-source voltage VDS (V)

D

Common source Ta = 25°C

−2.6

Pulse test

−2.4

−2.2

V

GS

−3

−2.8

−2 −3 −4 −5

= −2 V

V

– VGS

−0.5

−0.4

(V)

DS

−0.3

−0.2

−0.1

Drain-source voltage V

0

0 −4

Gate-source voltage VGS (V)

DS

Common source Ta = 25°C Pulse test

I

= −11 A

D

−5.5

−2.5

−8 −12 −16 −20

DS (ON)

– ID

V

GS

= −4 V

−10

Common source Ta = 25°C Pulse test

R

100

30

(mΩ)

10

DS (ON)

R

3

Drain-source ON resistance

1

0.3

−0.1 −0.3 −1 −3 −10 −30 −100

Drain current ID (A)

4

2002-03-12

TPC8108

50

Common source

Pulse test

40

30

(mΩ)

20

Drain-source ON resistance

DS (ON)

R

V

= −4 V

GS

10

0

−80 −40 0 40 120 160 80

−10

Ambient temperature Ta (°C)

10000

Capacitance – V

3000

1000

300

Common source

100

V

= 0 V

Capacitance C (pF)

GS

f = 1 MHz Ta = 25°C

30

−0.1 −0.3 −1 −3 −10 −30 −100

Drain-source voltage VDS (V)

2.0

(W)

(1)

1.6

D

1.2

(2)

0.8

0.4

Drain power dissipation P

0

0 40

Ambient temperature Ta (°C)

R

– Ta

DS (ON)

I

= −11 A, −5.5 A, −2.5 A

D

I

= −11 A, −5.5 A, −2.5 A

D

DS

C

iss

C

oss

C

rss

– Ta

P

D

(1) Device mounted on a

glass-epoxy board (a) (Note 2a)

(2) Device mounted on a

t = 10 s

80 120 160 200

glass-epoxy board (b) (Note 2b)

I

– VDS

−10

−1

DR

−3

−5

V

= 0 V

GS

Common source Ta = 25°C Pulse test

−100

(A)

DR

−10

−1

Drain reverse current I

−0.1

0

0.2 0.4 0.6 0.8 1.0 1.2

Drain-source voltage VDS (V)

– Ta

V

−2.0

−1.6

(V)

th

−1.2

−0.8

−0.4

Gate threshold voltage V

0

−80 −40 0 40 120 160 80

Ambient temperature Ta (°C)

th

Common source

V

= −10 V

DS

I

= −1 mA

D

Pulse test

Dynamic input/output characteristics

−30

V

= −24 V

(V)

DS

Drain-source voltage V

DD

−20

VDS

−12

−10

−6

0

0 20 40 60 80

Total gate charge Qg (nC)

−6

−12

VGS

Common source

I

= −11 A

D

Ta = 25°C Pulse test

V

DD

= −24 V

100

−30

−20

−10

0

(V)

GS

Gate-source voltage V

5

2002-03-12

TPC8108

1000

(1) Device mounted on a glass-epoxy board (a)

(Note 2a)

(Note 2b)

(2) Device mounted on a glass-epoxy board (b)

t = 10 s

100

10

(°C/W)

th

r

1

Normalized transient thermal impedance

0.1

0.001 0.01 0.1 1 10 100 1000

Pulse width tw (S)

−100

ID max (pulse) *

−10

(A)

D

Safe operating area

1 ms*

10 ms*

− t

r

th

w

(2)

(1)

Single pulse

−1

Drain current I

−0.1

* Single pulse

Ta = 25°C

Curves must be derated linearly with increase in temperature.

−0.01

−0.01 −0.1 −1 −10 −100

Drain-source voltage VDS (V)

V

DSS

max

6

2002-03-12

TPC8108

A

RESTRICTIONS ON PRODUCT USE

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor

devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..

• The TOSHIBA products listed in this document are intended for usage in general electronics applications

(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.

• The information contained herein is presented only as a guide for the applications of our products. No

responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.

The information contained herein is subject to change without notice.

•

000707EA

7

2002-03-12