Datasheet TPC8018 Datasheet

TPC8018-H

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)

TPC8018-H

High-Speed and High-Efficiency DC/DC Converter Applications

Notebook PC Applications

Portable-Equipment Applications

• Small footprint due to a small and thin package

• High-speed switching

• Small gate charge: Q

• Low drain-source ON-resistance: R

• High forward transfer admittance: |Y

• Low leakage current: I

• Enhancement mode: V

Absolute Maximum Ratings

Characteristic Symbol Rating Unit

Drain-source voltage

Drain-gate voltage (RGS = 20 kΩ)

Gate-source voltage

Drain current

Drain power dissipation (t = 10 s)

(Note 2a)

Drain power dissipation (t = 10 s)

(Note 2b)

Single-pulse avalanche energy

Avalanche current IAR 18 A

Repetitive avalanche energy

Channel temperature

Storage temperature range

Note: For Notes 1 to 4, refer to the next page.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with care.

= 12 nC (typ.)

SW

= 3.5 mΩ (typ.)

DS (ON)

| =50 S (typ.)

fs

= 10 µA (max) (VDS = 30 V)

DSS

= 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)

th

(Ta = 25°C)

V

DSS

V

DGR

V

GSS

DC (Note 1) ID 18

Pulsed (Note 1) I

(Note 3)

(Note 2a) (Note 4)

DP

P

D

P

D

E

AS

E

AR

T

ch

T

stg

30 V

±20 V

72

1.9 W

1.0 W

210 mJ

0.19 mJ

150 °C

−55 to 150 °C

A

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-6J1B

Weight: 0.085 g (typ.)

Circuit Configuration

8 6

1 2 3

7 5

4

1

2006-11-16

Thermal Characteristics

Characteristic Symbol Max Unit

TPC8018-H

Thermal resistance, channel to ambient

(t = 10 s) (Note 2a)

Thermal resistance, channel to ambient

(t = 10 s) (Note 2b)

R

65.8 °C/W

th (ch-a)

125 °C/W

th (ch-a)

Marking

(Note 5)

TPC8018 H

Part No. (or abbreviation code) Lot No.

A line indicates lead (Pb)-free package or lead (Pb)-free finish.

Note 1: The channel temperature should not exceed 150°C during use.

Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)

FR-4

25.4 × 25.4 × 0.8

(Unit: mm)

FR-4

25.4 × 25.4 × 0.8

(Unit: mm)

(a)

Note 3: V

= 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 18 A

DD

Note 4: Repetitive rating: pulse width limited by max channel temperature

Note 5: • on the lower left of the marking indicates Pin 1.

* Weekly code: (Three digits)

Week of manufacture (01 for first week of year, continuing up to 52 or 53)

Year of manufacture (The last digit of the calendar year)

(b)

2

2006-11-16

TPC8018-H

∼

Electrical Characteristics

Characteristic Symbol Test Condition Min Typ. Max Unit

Gate leakage current I

Drain cutoff current I

Drain-source breakdown voltage

Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.1 ⎯ 2.3 V

Drain-source ON-resistance R

Forward transfer admittance |Yfs| VDS = 10 V, ID = 9 A 25 50 ⎯ S

Input capacitance C

Reverse transfer capacitance C

Output capacitance C

Rise time tr ⎯ 5 ⎯

Turn-on time ton ⎯ 14 ⎯

Switching time

Fall time tf ⎯ 11 ⎯

Turn-off time t

Total gate charge (gate-source plus gate-drain)

Gate-source charge 1 Q

Gate-drain (“Miller”) charge Qgd ⎯ 9 ⎯

Gate switch charge QSW

(Ta = 25°C)

VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA

GSS

VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 µA

DSS

V

(BR) DSSID

V

(BR) DSXID

DS (ON)

iss

rss

oss

off

Q

g

gs1

= 10 mA, VGS = 0 V 30 ⎯ ⎯

= 10 mA, VGS = −20 V 15 ⎯ ⎯

VGS = 4.5 V, ID = 9 A ⎯ 4.8 6.2

V

= 10 V, ID = 9 A ⎯ 3.5 4.6

GS

⎯ 2265 ⎯

= 10 V, VGS = 0 V, f = 1 MHz

V

⎯ 255 ⎯

DS

10 V

V

GS

0 V

Duty

1%, tw = 10 µs

V

24 V, VGS = 10 V, ID = 18 A ⎯ 38 ⎯

DD

V

24 V, VGS = 5 V, ID = 18 A ⎯ 21 ⎯

DD

⎯ 7.3 ⎯

24 V, VGS = 10 V, ID = 18 A

V

DD

ID = 9 A

V

OUT

4.7 Ω

= 1.67Ω

L

R

V

15 V

DD

⎯ 1045 ⎯

⎯ 50 ⎯

⎯ 12 ⎯

Source-Drain Ratings and Characteristics

(Ta = 25°C)

V

mΩ

pF

ns

nC

Characteristic Symbol Test Condition Min Typ. Max Unit

Drain reverse current Pulse (Note 1) I

Forward voltage (diode) V

⎯ ⎯ ⎯ 72 A

DRP

IDR = 18 A, VGS = 0 V ⎯ ⎯ −1.2 V

DSF

3

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TPC8018-H

I

– VDS

3.5

D

3.3

3.2

(A)

D

20

10

4

8 6

16

12

4.5

8

Drain current I

4

0

0 0.2 0.4 0.6 0.8

Drain-source voltage VDS (V)

I

– VGS

D

(A)

D

50

Common source VDS = 10 V Pulse test

40

30

20

Ta = −55°C

Drain current I

10

0

0 1 2 3 6

100

25

Gate-source voltage VGS (V)

Common source Ta = 25°C Pu lse test

3.1

3

2.9

VGS = 2.8V

4 5

I

– VDS

3.8

4.5

3.6

D

3.5

Common source Ta = 25 °C Pulse test

3.4

VGS = 2.8V

1.2 0.4

1.6

3.3

3.2

3.1

3

50

10

6

4

5

40

(A)

D

30

20

Drain current I

10

0

1

0 0.8 2

Drain-source voltage VDS (V)

V

– V

DS

GS

Common source Ta = 25 °C Pulse test

0.16

(V)

0.2

DS

0.12

0.08

0.04

Drain-source voltage V

0

2 4 6 8 10

ID = 18 A

9

4.5

Gate-source voltage VGS (V)

1000

| (S)

fs

100

10

1

Forward transfer admittance |Y

0.1

0.1 1

⎪Y

⎪ – ID

fs

Ta = −55°C

100

Common source VDS = 10 V Pulse test

10

Drain current ID (A)

100

R

Common source Ta = 25°C Pulse test

25

100

(mΩ)

10

DS (ON)

R

Drain-source ON-resistance

4.5

VGS = 10 V

1

0.1 1 10

DS (ON)

– ID

100

Drain current ID (A)

4

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TPC8018-H

10

Common source

Pulse test

8

6

(mΩ)

DS (ON)

R

Drain-source ON-resistance

4

2

0

VGS = 4.5 V

VGS = 10 V

Ambient temperature Ta (°C)

R

DS (ON)

– Ta

ID = 18A

ID = 4.5A,9A

ID = 4.5A,9A,18A

1000

(A)

DR

100

10

Common source

Ta = 25°C

Pulse test

10

4.5

1

Drain reverse current I

160 −40 0 40 80 120 −80

0.1 0

−0.2

Drain-source voltage VDS (V)

10000

1000

Capacitance – V

100

Common source

Capacitance C (pF)

VGS = 0 V f = 1 MHz Ta = 25°C

10

0.1

1 10 100

Drain-source voltage VDS (V)

DS

2.5

C

iss

C

oss

C

rss

2

(V))

th

1.5

1

Common source

VDS = 10 V

0.5 ID = 1 mA

Gate threshold voltage V

Pulse test

0

−80 −40 0 40 80 120 160

Ambient temperature Ta (°C)

I

– VDS

DR

3

1

−0.4

VGS = 0 V

−0.6 −0.8 −1.0

V

– Ta

th

P

– Ta

2

(1)

1.6

(W)

D

1.2 (2)

0.8

0.4

0

Drain power dissipation P

0 40 80 120

D

(1)Device mounted on a

glass-epoxy board(a) (Note 2a)

(2)Device mounted on a

glass-epoxy board(b) (Note 2b)

ｔ＝10s

Ambient temperature Ta (°C)

160

Dynamic input/output

characteristics

50

Common source

ID = 18 A

40

(V)

DS

30

20

10

Ta = 25 °C

Pulse test

V

DS

Drain-source voltage V

0

0 8 24

16

VDD = 6 V

24

VGS

32

20

16

(V)

GS

12

8

12

4

Gate-source voltage V

0

40

Total gate charge Qg (nC)

5

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1000

(1) Device mounted on a glass-epoxy board (a)

(Note 2a)

(2) Device mounted on a glass-epoxy board (b)

(°C/W)

th

(Note 2b)

100

r

th

– tw

TPC8018-H

(2)

(1)

10

1

0.1

Transient thermal impedance r

0.001

0.01 0.1 1 10 100 1000

Single - pulse

Pulse width tw (s)

Safe operating area

1000

ID max (Pulse) *

100

(A)

D

10

* Single - pulse

Ta =2 5 ℃

1

Drain current I

Curves must be derated

linearly with increase in

temperature.

0.1

Drain-source voltage VDS (V)

10ms *

1

V

DSS

10

t=1ms *

max

100

6

2006-11-16

TPC8018-H

7

2006-11-16