Datasheet TPC8014-H Datasheet (TOSHIBA)

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)

TPC8014

TPC8014

Lithium Ion Battery Applications

Portable Equipment Applications

Notebook PC Applications

• Small footprint due to small and thin package

• Low drain-source ON resistance: R

• High forward transfer admittance: |Y

• Low leakage current: I

• Enhancement mode: V

= 10 µA (max) (VDS = 30 V)

DSS

= 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)

th

Maximum Ratings

Characteristics Symbol Rating Unit

Drain-source voltage

Drain-gate voltage (RGS = 20 kΩ)

Gate-source voltage

Drain current

Drain power dissipation (t = 10 s)

(Note 2a)

Drain power dissipation (t = 10 s)

(Note 2b)

Single pulse avalanche energy

Avalanche current IAR 11 A

Repetitive avalanche energy

Channel temperature

Storage temperature range

(Ta = 25°C)

DC (Note 1) ID 11

Pulse (Note 1) I

(Note 3)

(Note 2a) (Note 4)

= 11 mΩ (typ.)

DS (ON)

| = 10 S (typ.)

fs

V

30 V

DSS

V

30 V

DGR

V

±20 V

GSS

44

DP

P

1.9 W

D

P

1.0 W

D

E

157 mJ

AS

0.19 mJ

E

AR

T

150 °C

ch

T

−55 to 150 °C

stg

A

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-6J1B

Weight: 0.08 g (typ.)

Circuit Configurati on

8 6

7 5

Note 1, Note 2, Note 3 and Note 4: See the next page.

This transistor is an electrostatic-sensitive device. Please handle with
caution.

1

1 2 3

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Thermal Characteristics

Characteristics Symbol Max Unit

TPC8014

Thermal resistance, channel to ambient

(t = 10 s) (Note 2a)

Thermal resistance, channel to ambient

(t = 10 s) (Note 2b)

R

th (ch-a)

R

th (ch-a)

65.8 °C/W

125 °C/W

Marking

(Note 5)

TPC8014

Part No. (or abbreviation code)
Lot No.

A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)

FR-4

25.4 × 25.4 × 0.8

(unit: mm)

FR-4

25.4 × 25.4 × 0.8

(unit: mm)

(a)

Note 3: V

= 24 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = 11 A

DD

Note 4: Repetitive rating: pulse width limited by max channel temperature

Note 5: • on lower left of the marking indicates Pin 1.

※ Weekly code: (Three digits)

Week of manufacture
(01 for the first week of a year: sequential number up to 52 or 53)

Year of manufacture
(The last digit of a year)

(b)

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TPC8014

∼

Electrical Characteristics

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current I

Drain cut-OFF current I

Drain-source breakdown voltage

Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.3

Drain-source ON resistance R

Forward transfer admittance |Yfs| VDS = 10 V, ID = 5.5 A 5 10 ⎯ S

Input capacitance C

Reverse transfer capacitance C

Output capacitance C

Rise time tr

Turn-ON time ton

Switching time

Fall time tf ⎯ 20 ⎯

Turn-OFF time t

Total gate charge
(gate-source plus gate-drain)

Gate-source charge 1 Q

Gate-drain (“miller”) charge Qgd

(Ta = 25°C)

VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 µA

GSS

VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 µA

DSS

V

(BR) DSSID

V

(BR) DSXID

DS (ON)

iss

rss

oss

off

Q

⎯ 39 ⎯

g

gs1

= 10 mA, VGS = 0 V 30 ⎯ ⎯

= 10 mA, VGS = −20 V

VGS = 4.5 V, ID = 5.5 A

V

= 10 V, ID = 5.5 A ⎯ 11 14

GS

⎯ 1860 ⎯

= 10 V, VGS = 0 V, f = 1 MHz

V

⎯ 270 ⎯

DS

10 V

V

GS

0 V

Ω

4.7

Duty

1%, tw = 10 µs

V

24 V, VGS = 10 V, ID = 11 A

DD

⎯ 4 ⎯

ID = 5.5 A

V

DD

V

Ω

2.7

=

L

R

15 V

OUT

15

⎯

⎯ 320 ⎯

⎯

⎯

⎯ 69 ⎯

⎯ 9 ⎯

⎯

2.5 V

⎯

15 22

9 ⎯

19 ⎯

⎯

Source-Drain Ratings and Characteristics

(Ta = 25°C)

V

mΩ

pF

ns

nC

Characteristics Symbol Test Condition Min Typ. Max Unit

Drain reverse current Pulse (Note 1) I

Forward voltage (diode) V

DRP

IDR = 11 A, VGS = 0 V ⎯ ⎯ −1.2 V

DSF

⎯ ⎯

3

44 A

⎯

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TPC8014

3.5

10

4
6
8

I

– VDS

D

3.3

3.2

3.1

3.0

2.9

2.8

2.7

20

3.4

16

(A)

D

12

8

Drain current I

4

0

0 1 2 3 4 5

Drain-source voltage VDS (V)

VGS = 2.6 V

20

Common source
VDS = 10 V
Pulse test

16

(A)

D

12

8

Drain current I

4

I

– VGS

D

100

25

Ta = −55°C

0

0

1 1.5 4

0.5

Gate-source voltage VGS (V)

23

2.5 2.5

⎪ (S)

fs

Forward transfer admittance ⎪Y

0.1 1 10

Drain current ID (A)

|Y

25°C

fs

| – ID

Tc = 100 °C −55°C

Common source
VDS = 10 V
Pulse test

100

Drain-source ON resistance

I

– VDS

10

8
6

8

4

3.

(A)

3.4

D

6

4

Drain current I

2

0

00.2

Drain-source voltage VDS (V)

D

3.210

3.1

3.3

0.4 0.6 0.8 1.0

3.0

2.9

2.8

2.7

2.6

VGS = 2.5 V

V

– VGS

1

0.8

(V)

DS

0.6

0.4

2.5

0.2

Drain-source voltage V

0

048 20

Gate-source voltage VGS (V)

DS

5.5

12 16

Common source
Ta = 25°C
Pulse test

ID = 11A

100

R

30

VGE = 4.5 V

(mΩ)

10

DS (ON)

R

3

1

1 3 30 100

Drain current ID (A)

DS (ON)

VGS = 10 V

10

– ID

Common source
Ta = 25°C
Pulse test

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TPC8014

25

20

15

(Ω)

R

Drain-source ON resistance

VGS = 4.5 V

10

DS (ON)

10

5

0

−80 −40 0 40 80 160120

Ambient temperature Ta (°C)

R

DS (ON)

– Ta (α)

ID = 11, 5.5, 2.5 A

ID = 11, 5.5, 2.5 A

Common source

Pulse test

10000

Capacitance – V

DS

(A)

DR

Drain reverse current I

100

10

1

0.1
0 0.4 0.6 0.8 1.2 0.2

3

I

– VDS

DR

5

10

3

1

Drain-source voltage VDS (V)

V

– Ta

th

VGS = 10 V

Common source
Ta = 25°C
Pulse test

1

2.5

C

1000

100

iss

C

oss

C

rss

Capacitance C (pF)

Common source
VGS = 10 V
ID = 1 mA
Pulse test

10

0.1 1 10 100

Drain-source voltage VDS (V)

(V)

th

2

1.5

1

0.5

Gate threshold voltage V

0

−80 −40 0 40 80 120

Common source

VDS = 10 V

ID = 1 mA

Pulse test

Ambient temperature Ta (°C)

2

(1)

1.6

(W)

D

1.2

(2)

0.8

0.4

P

– Ta

D

(1) Device mounted on a

glass-epoxy board (a)
(Note 2a)

(2) Device mounted on a

glass-epoxy board (b)
(Note 2b)

t = 10 s

Drain power dissipation P

(V)

DS

Drain-source voltage V

Dynamic input/output characteristics

30

25

VDD = 24 V

20

V

DS

15

12

10

6

5

12

VDD = 24 V

Common source
Ta = 25°C

ID = 11 A

Pulse test

6

30

25

20

15

10

5

(V)

GS

Gate-source voltage V

0

0

50 100 150 200

Ambient temperature Ta (°C)

0

0102030

Total gate charge Qg (nC)

40 50 60

0

5

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TPC8014

1000

(1) Device mounted on a glass-epoxy board (a)

(2) Device mounted on a glass-epoxy board (b)

t = 10 s

100

(Note 2a)

(Note 2b)

10

(°C/W)

th

r

1

Normalized transient thermal impedance

0.1

0.001 0.01 0.1 10 100 100 0

Pulse width tw (S)

100

Safe operating area

(A)

ID max (pluse) *

10

D

1

1 ms*

10 ms*

Drain current I

0.1

* Single pulse

Ta = 25°C
Curves must be derated
linearly with increase in
temperature.

0.01

0.01 0.1 1 10 100

Drain-source voltage VDS (V)

V

max

DSS

r

th

− tw

(2)

(1)

Single pulse

1

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2004-07-06

TPC8014

RESTRICTIONS ON PRODUCT USE

•

The information contained herein is subject to change without notice.

•

The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.

•

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..

•

The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.

•

TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.

030619EAA

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