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查询TPC8010-H供应商
TPC8010-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII)
TPC8010-H
DC-DC Converters
Notebook PC Applications
Portable Equipment Applications
• Small footprint due to small and thin package
• High speed switching
• Small gate charge: Q
• Low drain-source ON resistance: R
• High forward transfer admittance: |Y
• Low leakage current: I
• Enhancement mode: V
Maximum Ratings
Characteristics Symbol Rating Unit
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (t = 10 s)
(Note 2a)
Drain power dissipation (t = 10 s)
(Note 2b)
Single pulse avalanche energy
Avalanche current IAR 11 A
Repetitive avalanche energy
Channel temperature
Storage temperature range
= 18 nC (typ.)
g
DS (ON)
= 10 µA (max) (VDS = 30 V)
DSS
= 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
th
(Ta ==== 25°C)
= 20 kΩ)
GS
DC (Note 1) ID 11
Pulse (Note 1) IDP 44
(Note 3)
(Note 2a) (Note 4)
= 12 mΩ (typ.)
| = 11 S (typ.)
fs
V
30 V
DSS
V
30 V
DGR
V
±20 V
GSS
1.9 W
P
D
1.0 W
P
D
E
157 mJ
AS
E
0.19 mJ
AR
T
150 °C
ch
T
−55 to 150 °C
stg
A
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 2-6J1B
Weight: 0.080 g (typ.)
Circuit Configuration
8 6
7 5
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
1
1 2 3
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Thermal Characteristics
Characteristics Symbol Max Unit
TPC8010-H
Thermal resistance, channel to ambient
(t = 10 s) (Note 2a)
Thermal resistance, channel to ambient
(t = 10 s) (Note 2b)
R
R
65.8 °C/W
th (ch-a)
125 °C/W
th (ch-a)
Marking
(Note 5)
TPC8010
H
※
TYPE
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
(a)
(b)
Note 3: V
= 24 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = 11 A
DD
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5: • on lower left of the marking indicates Pin 1.
※ shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of
manufacture: January to December are denoted by letters A to L respectively.)
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TPC8010-H
<
Electrical Characteristics
(Ta ==== 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
Drain cut-OFF current I
Drain-source breakdown voltage
GSS
DSS
V
(BR) DSS
V
(BR) DSX
V
V
I
D
I
D
Gate threshold voltage Vth V
Drain-source ON resistance R
DS (ON)
V
V
Forward transfer admittance |Yfs| V
Input capacitance C
Reverse transfer capacitance C
Output capacitance C
Rise time t
Turn-ON time t
1020
iss
V
120
rss
oss
3.1
r
11
on
Switching time
Fall time t
Turn-OFF time t
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1 Q
Gate-drain (“miller”) charge Q
3.4
f
off
Q
gs1
gd
Duty
V
g
V
2.6
V
4.4
Gate switch charge QSW
Source-Drain Ratings and Characteristics
= ±16 V, VDS = 0 V ±10 µA
GS
= 30 V, VGS = 0 V 10 µA
DS
= 10 mA, VGS = 0 V 30
V
= 10 mA, VGS = −20 V 15
= 10 V, ID = 1 mA 1.1 2.3 V
DS
= 4.5 V, ID = 5.5 A 16 25
GS
= 10 V, ID = 5.5 A 12 16
GS
= 10 V, ID = 5.5 A 5.5 11 S
DS
= 10 V, VGS = 0 V, f = 1 MHz
DS
mΩ
pF
400
I
= 5.5 A
VGS
10 V
0 V
D
V
OUT
ns
= 2.7 Ω
L
R
∼
15 V
V
−
DD
23
DD
DD
1%, t
=
∼
24 V, V
−
∼
24 V, V
−
4.7 Ω
= 10 µs
w
= 10 V, ID = 11 A 18
GS
= 5 V, ID = 11 A 10
GS
nC
DD
∼
24 V, V
−
= 10 V, ID = 11 A
GS
5.5
(Ta ==== 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain reverse current Pulse (Note 1) I
Forward voltage (diode) V
44 A
DRP
I
DSF
= 11 A, VGS = 0 V −1.2 V
DR
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TPC8010-H
10
10
3
5
8
4
(A)
D
6
4
Drain current I
2
2.8
0
0 2 4 6 8 10
Drain-source voltage VDS (V)
40
Common source
V
= 10 V
DS
Pulse test
30
(A)
D
20
Drain current I
10
100
0
0 1 2 3 4 5
Gate-source voltage VGS (V)
100
| (S)
30
fs
10
3
Ta = −55°C
1
Forward transfer admittance |Y
0.3
0.1 1 10 100
Drain current ID (A)
2.7
I
D
I
D
|Y
– VDS
2.6
2.5
– VGS
Ta = −55°C
| – ID
fs
100
25
Common source
V
DS
Pulse test
25
Common
source
Ta = 25°C
Pulse test
V
= 2 V
GS
= 10 V
2.4
2.3
2.2
– VDS
I
20
16
(A)
D
12
8
Drain current I
4
0
0 4
4
10
5
Drain-source voltage VDS (V)
D
3
2.8
8 12 16 20
Common source
Ta = 25°C
Pulse test
2.7
2.6
2.5
2.4
2.3
V
= 2.1 V
GS
V
– VGS
5.5
DS
I
D
= 11 A
Common source
Ta = 25°C
Pulse test
1
0.8
(V)
DS
0.6
0.4
0.2
Drain-source voltage V
2.5
0
0 2 4 6 10 12 8
Gate-source voltage VGS (V)
DS (ON)
V
= 4.5 V
GS
10
– ID
Common source
Ta = 25°C
Pulse test
30 10 3 1 0.3 0.1
R
100
30
(mΩ)
10
(ON)
DS
R
3
Drain-source on resistance
1
Drain current ID (A)
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TPC8010-H
25
20
V
= 4.5 V
(mΩ)
(ON)
DS
R
Drain-source on resistance
15
10
GS
10
5
0
−80 −40 0 40 80 160 120
Ambient temperature Ta (°C)
5000
3000
1000
500
300
Capacitance – V
100
Capacitance C (pF)
50
Common source
30
V
GS
f = 1 MHz
Ta = 25°C
10
0.1 1 10 100 5 50 0.5 30 3 0.3
= 0 V
Drain-source voltage VDS (V)
2
(1)
1.6
(W)
D
1.2
(2)
0.8
0.4
Drain power dissipation P
0
0
50 100 150 200
Ambient temperature Ta (°C)
DS (ON)
I
D
– Ta
= 11, 5.5, 2.5 A
R
– Ta
P
D
(1) Device mounted on a
(2) Device mounted on a
t = 10 s
I
= 11, 5.5, 2.5 A
D
Common source
Pulse test
DS
C
iss
C
oss
C
rss
glass-epoxy board (a)
(Note 2a)
glass-epoxy board (b)
(Note 2b)
I
– VDS
10
DR
5
3
V
= 0 V
GS
1
Common source
Ta = 25°C
Pulse test
100
(A)
DR
10
1
Drain reverse current I
0.1
0 −0.4 −0.6 −0.8 −1.2 −0.2 −1
Drain-source voltage VDS (V)
– Ta
V
2.5
2
(V)
th
1.5
1
Common source
0.5
V
= 10 V
Gate threshold voltage V
DS
I
= 1 mA
D
Pulse test
0
−80 −40 0 40 80 160 120
Ambient temperature Ta (°C)
th
Dynamic Input/Output Characteristics
40
Common source
I
= 11 A
D
Ta = 25°C
Pulse test
(V)
30
DS
V
= 24 V
DD
20
10
Drain-source voltage V
0
0 1 10 15 20
VDS
12
6
Total gate charge Qg (nC)
VGS
12
6
V
= 24 V
DD
16
12
8
4
0
(V)
GS
Gate-source voltage V
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TPC8010-H
1000
(1) Device mounted on a glass-epoxy
board (a) (Note 2a)
(2) Device mounted on a glass-epoxy
300
board (b) (Note 2b)
t = 10 s
100
(°C/W)
th
30
− t
r
th
w
(2)
(1)
10
3
1
Transient thermal impedance r
0.3
0.001 0.01 0.1 10 100 1000
Safe Operating Area
100
ID max (pulse)*
1 ms*
10
(A)
D
1
Drain current I
0.1
*: Single pulse Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
0.01
0.01 0.1 1 10 100
Drain-source voltage VDS (V)
10 ms*
V
DSS
max
1
Pulse width tw (s)
Single pulse
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TPC8010-H
A
RESTRICTIONS ON PRODUCT USE
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
• The information contained herein is subject to change without notice.
000707EA
7
2002-03-12
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