Datasheet TPC6201 Datasheet (TOSHIBA)

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

TPC6201

HDD Motor Drive Applications

Notebook PC Applications

Portable Equipment Applications

· Low drain-source ON resistance: R

DS (ON)

· High forward transfer admittance: |Y

· Low leakage current: I

= 10 µA (max) (VDS = 30 V)

DSS

= 80 mΩ (typ.)

| = 3.8 S (typ.)

fs

· Enhancement-model: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)

Maximum Ratings

Characteristics Symbol Rating Unit

Drain-source voltage V

Drain-gate voltage (RGS = 20 kW) V

Gate-source voltage V

Drain current

Drain power dissipation (t = 5 s) (Note 2a)

Drain power dissipation (t = 5 s) (Note 2b)

Single pulse avalanche energy (Note 4) EAS 1.0 mJ

Avalanche current IAR 1.25 A

Repetitive avalanche energy (Note 5) EAR 0.16 mJ

Channel temperature Tch 150 °C

Storage temperature range T

DC (Note 1) ID 2.5

Pulse (Note 1) I

Single-device operation (Note 3a)

Single device value at dual operation (Note 3b)

Single-device operation (Note 3a)

Single device value at dual operation (Note 3b)

(Ta ==== 25°C)

30 V

DSS

30 V

DGR

±20 V

GSS

10

DP

P

(1) 0.9

D

P

(2) 0.76

D

P

(1) 0.4

D

P

(2) 0.31

D

-55 to 150 °C

stg

A

W

Thermal Characteristics

Characteristics Symbol Max Unit

Thermal Resistance (channel-to-ambient) (t = 5 s) (Note 2a)

Thermal Resistance (channel-to-ambient) (t = 5 s) (Note 2b)

Single-device operation (Note 3a)

Single device value at dual operation (Note 3b)

Single-device operation (Note 3a)

Single device value at dual operation (Note 3b)

R

th (ch-a)

R

th (ch-a)

R

th (ch-a)

R

th (ch-a)

(2) 139

°C/W

(2) 165

(2) 310

°C/W

(2) 400

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-3T1B

Weight: 0.011 g (typ.)

Circuit Configuration

6 4

5

1 2 3

Marking (Note 6)

S 4 A

Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5), (Note 6) Please see next page.

This transistor is an electrostatically sensitive device. Please handle it with caution.

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Electrical Characteristics

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current I

Drain cut-OFF current I

Drain-source breakdown voltage

Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.3 ¾ 2.5 V

Drain-source ON resistance

Forward transfer admittance |Yfs| VDS = 10 V, ID = 1.3 A 1.25 3.8 ¾ S

Input capacitance C

Reverse transfer capacitance C

Output capacitance C

Rise time tr ¾ 2.4 ¾

Turn-ON time ton ¾ 8 ¾

Switching time

Fall time tf ¾ 2 ¾

Turn-OFF time t

Total gate charge (gate-source plus gate-drain)

Gate-source charge Qgs ¾ 3.4 ¾

Gate-drain (“miller”) charge Qgd

(Ta ==== 25°C)

VGS = ±16 V, VDS = 0 V ¾ ¾ ±10 mA

GSS

VDS = 30 V, VGS = 0 V ¾ ¾ 10 mA

DSS

V

(BR) DSSID

V

(BR) DSXID

R

DS (ON)

R

DS (ON)

¾ 170 ¾

iss

¾ 25 ¾

rss

oss

off

Q

¾ 4.7 ¾

g

= 10 mA, VGS = 0 V 30 ¾ ¾

= 10 mA, VGS = -20 V 15 ¾ ¾

VGS = 4.5 V, ID = 1.3 A ¾ 128 145

VGS = 10 V, ID = 1.3 A ¾ 80 95

V

= 10 V, VGS = 0 V, f = 1 MHz

DS

¾ 40 ¾

4.7 W

= 10 V,

GS

ID = 1.3 A

~

V

15 V

-

DD

V

OUT

= 11.5 W

L

R

¾ 11 ¾

¾ 1.3 ¾

V

GS

Duty

V

DD

= 2.5 A

I

D

~

-

10 V

0 V

1%, tw = 10 ms

24 V, V

Source-Drain Ratings and Characteristics

(Ta ==== 25°C)

V

mW

pF

ns

nC

Characteristics Symbol Test Condition Min Typ. Max Unit

Pulse drain reverse current (Note 1) I

Forward voltage (diode) V

¾ ¾ ¾ 10 A

DRP

IDR = 2.5 A, VGS = 0 V ¾ ¾ -1.2 V

DSF

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 2: (a) Device mounted on a glass-epoxy board (a) (t = 5 s)

(b) Device mounted on a glass-epoxy board (b) (t = 5 s)

FR-4

25.4 ´ 25.4 ´ 0.8

Unit: (mm)

(a)

FR-4

25.4 ´ 25.4 ´ 0.8

Unit: (mm)

(b)

Note 3: (a) Single-device operation; values of PD (1) and Rth

(1) for a single device during single-device

(ch-a)

operation

(b) Dual operation; values of P

Note 4: V

= 24 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 W, IAR = 1.25 A

DD

(2) and Rth

D

(2) for a single device during dual operation

(ch-a)

Note 5: Repetitive rating; pulse width limited by maximum channel temperature Note 6: Black round marking “·” locates on the left lower side of parts number marking “S4A” indicates terminal

No.1.

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Common source Ta = 25°C Pulse test

4

(A)

D

3

2

Drain current I

1

0 0.1 00.2 0.3 0.4 0.5

Drain-source voltage VDS (V)

5

Common source VDS = 10 V Pulse test

4

(A)

D

3

2

Drain current I

1

0

0 1 4 5

Gate-source voltage VDS (V)

ï (S)

fs

10

Common source

VDS = 10 V

Pulse test

5

3

– VDS

I

D

I

– VGS

D

Ta = -55°C

2 3

| – ID

|Y

fs

8

10

100°C

25°C

VGS = 2.5 V

Ta = -55°C

25°C

100°C

4.5

3.5

– VDS

I

6

3

10

8

(A)

D

6

4

Drain current I

2

0

01

Drain-source voltage VDS (V)

D

Common source

56

Ta = 25°C Pulse test

4.5

4

3.5

3

VGS = 2.5 V

23 4 5

V

– VGS

1.0

0.8

(V)

DS

0.6

0.4

0.2

Drain-source voltage V

0

02 8 1046

0.6 A

Gate-source voltage VGS (V)

DS

1.2 A

ID = 2.5 A

Common source Ta = 25°C Pulse test

DS (ON)

– ID

VGS = 4.5 V

10 V

1000

R

Common source Ta = 25°C Pulse test

300

(mW)

Drain-source on resistance

100

DS (ON)

R

30

Forward transfer admittance ïY

1

0.1 0.3 0.5 1 3 5 10

Drain current ID (A)

10

0.1

Drain current ID (A)

3

3 10 1000.3 1 30

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r

250

Drain-source on resistance

Common source

Pulse test

200

ID = 2.5 A, 1.2 A, 0.6 A

150

(mW)

DS (ON)

R

VGS = 4.5 V

100

50

VGS = 10 V

0

-80 -40 0 40 80 160

Ambient temperature Ta (°C)

1000

300

100

30

10

Capacitance C (pF)

Common source

VGS = 0 V

3

f = 1 MHz

Ta = 25°C

1

0.1 1 10 1000.3 3 30

Capacitance – V

Drain-source voltage VDS (V)

1

(1)

(2)

0.8

(W)

D

0.6

(3)

0.4 (4) t = 5 s

0.2

Drain power dissipation P

0

25 75 125 175

50 100 150 200

Ambient temperature Ta (°C)

R

– Ta

DS (ON)

ID = 2.5 A, 1.2 A, 0.6 A

DS

C

– Ta

P

D

Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Dual operation (per device) (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Dual operation (per device) (Note 3b)

120

C

oss

I

– VDS

100

Common source Ta = 25°C Pulse test

30

(A)

DR

10

10 V

3

1

Drain reverse current I

0.3

3 V

0.1 0 -0.4 -0.6 -0.8 -1 -1.2 -0.2

Drain-source voltage VDS (V)

DR

5 V

1 V

VGS = 0 V

-1.4

– Ta

V

2.8

2.4

iss

ss

(V)

th

2

1.6

1.2

Gate threshold voltage V

0.8

-80 -40 0 40 80 160

Ambient temperature Ta (°C)

th

Common source

VDS = 10 V

ID = 1 mA

Pulse test

120

Dynamic input/output characteristics

40

(V)

30

DS

VDS = 24 V

20

12 V

10

6 V

Drain-source voltage V

0

6 V

V

GS

2

4

Total gate charge Qg (nC)

12 V

VDD = 24 V

6

Common source ID = 2.5 A Ta = 25°C Pulse test

8 10

16

12

8

4

0

(V)

GS

Gate-source voltage V

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Transient thermal impedance

(°C/W) r

th

1000

300

100

30

10

3

1

0.001

Single pulse

0.01 0.1 1 10 100 1000

100

(A)

Drain current I

Single device value at dual

30

operation (Note 3b)

ID max (pulse)*

10

3

1

D

0.3

0.1

0.03

0.01

*: Curves must be derated

0.003 linearly with increase in

temperature

0.001

0.01 0.03 0.1 0.3 1 3 10 10030

Safe operating area

Drain-source voltage VDS (V)

1 ms*

V

DSS

max

- tw

r

th

(4)

(3)

(2)

(1)

Device mounted on a glass-epoxy board (a) (Note 2a)

(1) Single-device operation (Note 3a)

(2) Single device value at dual operation (Note 3b)

Device mounted on a glass-epoxy board (b) (Note 2b)

(3) Single-device operation (Note 3a)

(4) Single device value at dual operation (Note 3b)

Pulse tw (S)

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RESTRICTIONS ON PRODUCT USE

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.

· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

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