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查询TPC6108供应商
TOSHIBA Field Effect Transistor Silicon P Channel MO S Type (U-MOSⅣ)
TPC6108
TPC6108
Notebook PC Applications
Portable Equipment Applications
• Small footprint due to small and thin package
• Low drain-source ON resistance: R
• High forward transfer admittance: |Y
• Low leakage current: I
• Enhancement-model: V
(VDS = −10 V, ID = −1 mA)
Maximum Ratings
Characteristics Symbol Rating Unit
Drain-source voltage V
Drain-gate voltage (RGS = 20 kΩ) V
Gate-source voltage V
Drain current
Drain power dissipation(t = 5 s) (Note 2a) PD 2.2
Drain power dissipation(t = 5 s) (Note 2b) PD 0.7
Single pulse avalanche energy (Note 4) EAS 1.3 mJ
Avalanche current IAR −2.25 A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
Channel temperature Tch 150 °C
Storage temperature range T
DC (Note 1) ID −4.5
Pulse (Note 1) I
= −10 µA (max) (VDS = −30 V)
DSS
= −0.8 to −2.0 V
th
(Ta ==== 25°C)
DS (ON)
= 50 mΩ (typ.)
| = 7.4 S (typ.)
fs
DSS
DGR
GSS
DP
E
AR
stg
−30 V
−30 V
±20 V
A
−18
W
0.22 mJ
−55~150 °C
TENTATIVE
Unit: mm
Drain
Drain
Gate
JEDEC ―
JEITA ―
TOSHIBA 2-3T1A
Weight: 0.011 g (typ.)
Circuit Configuration
6 4
Source
Drain
Drain
5
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to ambient(t = 5 s)
(Note 2a)
Thermal resistance, channel to ambient(t = 5 s)
(Note 2b)
Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please refer
to the next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
R
th (ch-a)
R
th (ch-a)
56.8 °C/W
178.5 °C/W
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TPC6108
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Electrical Characteristics
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
Drain cut-off current I
Drain-source breakdown voltage
Gate threshold voltage Vth VDS = −10 V, ID = − 1 mA −0.8 −2.0 V
Drain-source ON resistance
Forward transfer admittance |Yfs| VDS = −10 V, ID = −2.2 A 3.7 7.4 S
Input capacitance C
Reverse transfer capacitance C
Output capacitance C
Rise time tr 3.5
Turn-on time ton 12
Switching time
Fall time tf 21
Turn-off time t
Total gate charge
(gate-source plus gate-drain)
Gate-source charge1 Q
Gate-drain (“miller”) charge Qgd
(Ta ==== 25°C)
VGS = ±16 V, VDS = 0 V ±10 µA
GSS
VDS = −30 V, VGS = 0 V −10 µA
DSS
V
(BR) DSSID
V
(BR) DSXID
R
DS (ON)
R
DS (ON)
570
iss
75
rss
oss
off
Q
13
g
gs1
= −10 mA, VGS = 0 V −30
= −10 mA, VGS = 20 V −15
VGS = −4.5 V, ID = −2.2 A 75 100
VGS = −10 V, ID = −2.2 A 50 60
V
= −10 V, VGS = 0 V, f = 1 MHz
DS
4.7 Ω
= 10 µs
w
GS
ID = −2.2 A
∼
V
−15 V
−
DD
= −10 V,
V
= 6.8 Ω
L
R
0 V
V
GS
−10 V
Duty
1%, t
=
∼
V
−24 V, V
−
DD
I
= −4.5 A
1.8
D
TENTATIVE
85
OUT
70
2.5
Source-Drain Ratings and Characteristics
(Ta ==== 25°C)
V
mΩ
pF
ns
nC
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain reverse current Pulse (Not e 1) I
Forward voltage (diode) V
DRP
DSF
IDR = −4.5 A, VGS = 0 V 1.2 V
−18 A
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TPC6108
A
Marking (Note 5)
(or abbreviation code)
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: (a) Device mounted on a glass-epoxy board (a) (t = 5 s)
(b) Device mounted on a glass-epoxy board (b) (t = 5 s)
Lot code (month)
Part No.
Pin #1
S3H
(a)
Lot code
(year)
Lot No. (weekly code)
Product-specific code
line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
TENTATIVE
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(b)
Note 3: VDD = −24 V,Tch = 25°C (initial),L = 0.2 mH,RG = 25 Ω,IAR = -2.25 A
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5: ● on lower left of the marking indicates Pin 1.
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TPC6108
TENTATIVE
RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
030619EAA
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
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