Datasheet TPC6104 Datasheet (TOSHIBA)

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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)

TPC6104

Notebook PC Applications

Portable Equipment Applications

• Low drain-source ON resistance: R

• High forward transfer admittance: |Y

• Low leakage current: I

• Enhancement mode: V

= −10 µA (max) (VDS = −20 V)

DSS

= −0.5 to −1.2 V

th

= −10 V, ID = −200 µA)

(V

DS

= 33 mΩ (typ.)

DS (ON)

| = 12 S (typ.)

fs

Maximum Ratings

Characteristics Symbol Rating Unit

Drain-source voltage V

Drain-gate voltage (RGS = 20 kΩ) V

Gate-source voltage V

Drain current

Drain power dissipation (t = 5 s) (Note 2a)

Drain power dissipation (t = 5 s) (Note 2b)

Single pulse avalanche energy (Note 3) EAS

Avalanche current IAR

Repetitive avalanche energy (Note 4) EAR

Channel temperature Tch

Storage temperature range T

(Ta = 25°C)

DC (Note 1)

Pulse (Note 1)

DSS

DGR

GSS

I

−5.5

D

I

−22

DP

P

D

P

D

stg

20

−

−20

±8

2.2 W

0.7 W

4.9 mJ

2.75 A

−

0.22

150

−55~150

Thermal Characteristics

V

A

mJ

°C

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-3T1A

Weight: 0.011 g (typ.)

Circuit Configurati on

6 4

5

Characteristics Symbol Max Unit

Thermal resistance, channel to ambient (t = 5 s) (Note 2a)

Thermal resistance, channel to ambient (t = 5 s) (Note 2b)

R

56.8 °C/W

th (ch-a)

178.5 °C/W

th (ch-a)

Note: Note 1, Note 2, Note 3, Note 4 and Note 5: See the next page.

This transistor is an electrostatic-sensitive device. Please handle with caution.

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TPC6104

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Electrical Characteristics

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current I

Drain cut-off current I

Drain-source breakdown voltage

Gate threshold voltage Vth VDS = −10 V, ID = −200 µA

Drain-source ON resistance

Forward transfer admittance |Yfs| VDS = −10 V, ID = −2.8 A 6 12 ⎯ S

Input capacitance C

Reverse transfer capacitance C

Output capacitance C

Rise time tr ⎯ 8.5 ⎯

Turn-on time ton ⎯ 15 ⎯

Switching time

Fall time tf ⎯ 20 ⎯

Turn-off time t

Total gate charge (gate-source plus gate-drain)

Gate-source charge Qgs ⎯ 14 ⎯

Gate-drain (“miller”) charge Qgd

(Ta = 25°C)

VGS = ±8 V, VDS = 0 V ⎯ ⎯ ±10 µA

GSS

VDS = −20 V, VGS = 0 V ⎯ ⎯ −10 µA

DSS

V

(BR) DSSID

V

(BR) DSXID

R

DS (ON)

R

DS (ON)

R

DS (ON)

iss

rss

oss

off

⎯ 19 ⎯

Q

g

= −10 mA, VGS = 0 V −20 ⎯ ⎯

= −10 mA, VGS = 8 V

VGS = −1.8 V, ID = −1.4 A

VGS = −2.5 V, ID = −2.8 A ⎯ 49 60

VGS = −4.5 V, ID = −2.8 A ⎯ 33 40

⎯ 1430 ⎯

= −10 V, VGS = 0 V, f = 1 MHz

V

⎯ 200 ⎯

DS

0 V

V

GS

−5 V

Ω

4.7

Duty

1%, tw = 10 µs

−16 V, VGS = −5 V,

V

DD

I

= −5.5 A

D

−

ID = −2.8 A

V

OUT

Ω

3.6

=

L

R

V

−10 V

DD

12

0.5

−

⎯

⎯ 5 ⎯

⎯

⎯ −

78 120

240 ⎯

66 ⎯

⎯

1.2 V

Source-Drain Ratings and Characteristics

(Ta = 25°C)

V

mΩ

pF

ns

nC

Characteristics Symbol Test Condition Min Typ. Max Unit

Drain reverse current

Forward voltage (diode) V

Pulse (Note 1) I

DRP

DSF

IDR = −5.5 A, VGS = 0 V — — 1.2 V

— — —

2

22 A

−

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TPC6104

Marking

(or abbreviation code)

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: (a) Device mounted on a glass-epoxy board (a) (t = 5 s)

Note 3: V

Note 4: Repetitive rating;:pulse width limited by maximum channel temperature Note 5: • on lower left of the marking indicates Pin 1.

(Note 5)

Part No.

(b) Device mounted on a glass-epoxy board (b) (t = 5 s)

DD

Lot code (month)

Lot No.

S3D

Product-specific code

Pin #1

= −16 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = −2.75 A

Lot code

(year)

(a)

A line indicates lead (Pb)-free package or lead (Pb)-free finish.

FR-4

25.4 × 25.4 × 0.8

Unit: (mm)

FR-4

25.4 × 25.4 × 0.8

Unit: (mm)

(b)

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TPC6104

−

−5

−4

(A)

D

−3

−2.5

−5

3

−

−2

Drain current I

1

−

0

−0.2 −0.4 −0.6 −1.0

Drain-source voltage VDS (V)

−10

(A)

D

Drain current I

Common source VDS = −10 V Pulse test

−8

−6

−4

2

−

0

0 −0.5 −1 −1.5 −2 −2.5

Gate-source voltage VGS (V)

100

Common source VDS = −10 V Pulse test

30

| (S)

fs

10

3

1

0.3

Forward transfer admittance |Y

0.1

−0.1 −1 −10 −100

100°C

−0.3 −3 −30

Drain current ID (A)

I

D

−2

I

– VGS

D

100°C

|Y

fs

Ta = −55°C

– VDS

1.9

−

25°C

| – ID

25°C

1.8

−

−1.7

−1.6

−1.5

VGS = −1.4 V

Common source Ta = 25°C Pulse test

−0.8

Ta = −55°C

I

– VDS

−10

−5

2.5

−8

(A)

D

−6

−4

Drain current I

2

−

0

0 −1 −2 −3 −4 −5

4

Drain-source voltage VDS (V)

2.1

D

−2

3

1.8

−

−1.6

VGS = −1.4 V

Common source Ta = 25°C Pulse test

V

– VGS

−1

−0.8

(V)

DS

−0.6

−0.4

0.2

−

Drain-source voltage V

−1.1 A

0

0 −2 −4 −6 −8 −10

Gate-source voltage VGS (V)

DS

Common source Ta = 25°C Pulse test

ID = −4.5 A

−2.2 A

1000

R

300

)

Ω

(m

100

DS (ON)

R

30

Drain-source on resistance

10

−0.3 −3 − 30

−0.1 −1 −10 −100

Drain current ID (A)

DS (ON)

– ID

−1.8 V

Common source Ta = 25°C Pulse test

−2.5 V

VGS = −4.5 V

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TPC6104

−

−8 V

V

160

Common source

Pulse test

120

VGS = −1.8 V

R

DS (ON)

– Ta

−4.5 A

I

– VDS

−100

(A)

30

−

DR

Common source Ta = 25 °C Pulse test

(mΩ)

80

(ON)

DS

R

−2.5 V

40

Drain-source on resistance

−4.5 V

0

−80 −40 0 40 80 160120

Ambient temperature Ta (°C)

−2.2 A

ID = −1.1A

ID = −1.1 A, −2.2 A, −4. 5 A

4.5 A−4.5 A

−

ID = −1.1 A, −2.2 A

−10

3

−

Drain reverse current I

−1 0 0.4 0.8 1.2 1.6 2.0

4

−

−2.0

−1.8

−1

VGS = 0 V

Drain-source voltage VDS (V)

10000

3000

1000

300

100

Capacitance C (pF)

Common source Ta = 25°C

30

f = 1 MHz VGS = 0 V

10

−0.1 −1 −10 −100−0.3 −3 −30

Capacitance – V

Drain-source voltage VDS (V)

DS

C

iss

C

oss

C

rss

V

– Ta

−2.0

(V)

−1.5

th

−1.0

−0.5

Gate threshold voltage V

0

−80 −40 0 40 80 160

Ambient temperature Ta (°C)

th

Common source VDS = −10 V ID = −200 µA Pulse test

120

2.5 (1) t = 5 s

2

(W)

D

1.5

(1) DC

1

(2) t = 5 s

0.5 (2) DC

Drain power dissipation P

0

40 80 120 160

Ambient temperature Ta (°C)

P

– Ta

D

(1) Device mounted on a

glass-epoxy board (a) (Note 2a)

(2) Device mounted on a

glass-epoxy board (b) (Note 2b)

(V)

DS

Drain-source voltage V

Dynamic input/output characteristics

−20 Common source

ID = −6 A Ta = 25 °C Pulse test

VDD = −16 V

4 V

0

816

Total gate charge Qg (nC)

−16

−

12

−8

4

−

0

−10

VGS

−8

(V)

GS

−6

VDD = −16 V

−8

−4 V

24 40

32

−4

2

−

Gate-source voltage V

0

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TPC6104

1000

300

100

(°C/W)

th

30

10

Device mounted on a glass-

epoxy board (b) (Note 2b)

3

1

Transient thermal impedance r

0.3

0.1

0.001 0.01 0.1 10 100 1000

−100

Safe operating area

−30

ID max (pulsed)*

10

−

−3

(A)

−1

D

−0.3

−0.1

Drain current I

−0.03

−0.01

*

: Single nonrepetitive pulse

Ta = 25°C

Curves must be derated

−0.003 linearly with increase in temperature

−0.001

−0.01 −0.03 −0.1 −0.3 −1 −3 −10 −100−30

Drain-source voltage VDS (V)

10 ms*

V

DSS

1 ms*

max

r

– tw

th

Device mounted on a glass-

epoxy board (a) (Note 2a)

1

Pulse width tw (s)

Single pulse

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TPC6104

RESTRICTIONS ON PRODUCT USE

•

The information contained herein is subject to change without notice.

•

The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

•

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..

•

The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.

•

TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.

030619EAA

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