Datasheet TPC6101 Datasheet (TOSHIBA)

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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)

TPC6101

Notebook PC Applications

Portable Equipment Applications

· Low drain-source ON resistance: R

· High forward transfer admittance: |Y

· Low leakage current: I

· Enhancement-model: Vth = −0.5 to −1.2 V (VDS = −10 V,

I

Maximum Ratings

Characteristics Symbol Rating Unit

Drain-source voltage V

Drain-gate voltage (RGS = 20 kW) V

Gate-source voltage V

Drain current

Drain power dissipation (t = 5 s)

Single pulse avalanche energy (Note 3) EAS 3.3 mJ

Avalanche current IAR -2.25 A

Repetitive avalanche energy (Note 4) EAR 0.22 mJ

Channel temperature Tch 150 °C

Storage temperature range T

= −10 µA (max) (VDS = −20 V)

DSS

= −200 µA)

D

(Ta ==== 25°C)

DC

(Note 1)

Pulse

(Note 1)

(Note 2a)

(Note 2b)

DS (ON)

= 48 mΩ (typ.)

| = 8.2 S (typ.)

fs

-20 V

DSS

-20 V

DGR

±12 V

GSS

-4.5

I

D

-18

I

DP

2.2 W

P

D

0.7 W

P

D

-55 to 150 °C

stg

A

Thermal Characteristics

Characteristics Symbol Max Unit

Thermal resistance, channel to ambient

(t = 5 s) (Note 2a)

Thermal resistance, channel to ambient

(t = 5 s) (Note 2b)

R

56.8 °C/W

th (ch-a)

178.5 °C/W

th (ch-a)

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-3T1A

Weight: 0.011 g (typ.)

Circuit Configuration

6 4

Marking

5

1 2 3

(Note 5)

S 3 A

Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next

page.

This transistor is an electrostatically sensitive device. Please handle it with caution.

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TPC6101

<

Electrical Characteristics

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current I

Drain cut-OFF current I

Drain-source breakdown voltage

Gate threshold voltage Vth VDS = -10 V, ID = -200 mA -0.5 ¾ -1.2 V

Drain-source ON resistance

Forward transfer admittance |Yfs| VDS = -10 V, ID = -2.2 A 4.1 8.2 ¾ S

Input capacitance C

Reverse transfer capacitance C

Output capacitance C

Rise time tr ¾ 6 ¾

Turn-ON time ton ¾ 11 ¾

Switching time

Fall time tf ¾ 57 ¾

Turn-OFF time t

Total gate charge (gate-source plus gate-drain)

Gate-source charge Qgs ¾ 6 ¾

Gate-drain (“miller”) charge Qgd

(Ta ==== 25°C)

VGS = ±10 V, VDS = 0 V ¾ ¾ ±10 mA

GSS

VDS = -20 V, VGS = 0 V ¾ ¾ -10 mA

DSS

V

(BR) DSSID

V

(BR) DSXID

R

DS (ON)

R

DS (ON)

R

DS (ON)

¾ 830 ¾

iss

¾ 300 ¾

rss

oss

off

Q

¾ 12 ¾

g

= -10 mA, VGS = 0 V -20 ¾ ¾

= -10 mA, VGS = 12 V -8 ¾ ¾

VGS = -2 V, ID = -2.2 A ¾ 110 180

VGS = -2.5 V, ID = -2.2 A ¾ 75 100

VGS = -4.5 V, ID = -2.2 A ¾ 48 60

= -10 V, VGS = 0 V, f = 1 MHz

V

DS

4.7 W

GS

ID = -2.2 A

~

V

-

DD

= -5 V,

V

OUT

= 4.5 W

L

R

-10 V

V

GS

Duty

~

V

-

DD

I

= -4.5 A

D

0 V

-5 V

1%, tw = 10 ms

-16 V, V

¾ 370 ¾

¾ 112 ¾

¾ 6 ¾

Source-Drain Ratings and Characteristics

(Ta ==== 25°C)

V

mW

pF

ns

nC

Characteristics Symbol Test Condition Min Typ. Max Unit

Pulse drain reverse current (Note 1) I

Forward voltage (diode) V

¾ ¾ ¾ -18 A

DRP

IDR = -4.5 A, VGS = 0 V ¾ ¾ 1.2 V

DSF

Note 1: Please use devices on condition that the channel temperature is below 150°C.

Note 2: (a) Device mounted on a glass-epoxy board (a) (t = 5 s)

(b) Device mounted on a glass-epoxy board (b) (t = 5 s)

(a)

FR-4

25.4 ´ 25.4 ´ 0.8

Unit: (mm)

(b)

FR-4

25.4 ´ 25.4 ´ 0.8

Unit: (mm)

Note 3: V

= 16 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 W, IAR = -2.25 A

DD

Note 4: Repetitive rating; pulse width limited by maximum channel temperature

Note 5: Black round marking “·” locates on the left lower side of parts number marking “S3A” indicates terminal

No.1.

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TPC6101

-5

-5 V -3 V

-4 V

-4

(A)

D

-3

-2

Drain current I

-1

-2.5 V

0

-0.4 -0.8 -1.2 -2.0

Drain-source voltage VDS (V)

-10

(A)

D

Drain current I

Common source VDS = -10 V Pulse test

-8

-6

-4

-2

0

0 -0.5 -1 -1.5 -2 -2.5

100°C

Gate-source voltage VGS (V)

100

Common source VDS = -10 V Pulse test

30

| (S)

fs

10

3

1

0.3

Forward transfer admittance |Y

0.1

-0.1 -1 -10 -100

-0.3 -3 -30

Drain current ID (A)

– VDS

I

D

-2.0 V

– VGS

I

D

25°C

|Y

fs

Common source Ta = 25°C Pulse test

-1.9 V

Ta = -55°C

| – ID

-1.8 V

-1.7 V

-1.6 V

VGS = -1.4 V

-1.6

Ta = -55°C

25°C

100°C

– VDS

I

-2.5 V

-4 V

-2.4 V

D

-3 V

Common source Ta = 25°C Pulse test

-2.2 V

-2.0 V

-1.8 V

-1.6 V

VGS = -1.4 V

-10

-8

(A)

D

-6

-4

Drain current I

-2

0

0 -1 -2 -3 -4 -5

-5 V

Drain-source voltage VDS (V)

V

– VGS

-1

-0.8

(V)

DS

-0.6

-0.4

-0.2

Drain-source voltage V

-1.1 A

0

0 -2 -4 -6 -8 -10

Gate-source voltage VGS (V)

DS

-2.2 A

Common source Ta = 25°C Pulse test

ID = -4.5 A

DS (ON)

– ID

-2.0 V

Common source Ta = 25°C Pulse test

-2.5 V

VGS = -4.5 V

1000

R

300

(m9)

100

DS (ON)

R

30

Drain-source on resistance

10

-0.1 -1 -10 -100

-0.3 -3 -30

Drain current ID (A)

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180

Drain-source on resistance

Common source

160

Pulse test

140

120

100

VGS = -2.0 V

(m9)

80

DS (ON)

60

R

-2.5 V

40

-4.5 V

20

0

-80 -40 0 40 80 160

Ambient temperature Ta (°C)

10000

3000

1000

300

100

Capacitance C (pF)

Ta = 25°C

30

f = 1 MHz

VGS = 0 V

10

-0.1 -1 -10 -100

Capacitance – V

-0.3 -3 -30

Drain-source voltage VDS (V)

2.5 (1) t = 5 s

2

(W)

D

1.5

(1) DC

1

(2) t = 5 s

0.5 (2) DC

Drain power dissipation P

0

40 80 120 160

Ambient temperature Ta (°C)

DS (ON)

– Ta

-1.1 A

R

– Ta

P

D

(1) Device mounted on a

(2) Device mounted on a

ID = -2.2 A

-4.5 A

-2.2 A

-1.1 A

-2.2 A

-1.1 A

120

DS

C

iss

C

oss

C

rss

glass-epoxy board (a) (Note 2a)

glass-epoxy board (b) (Note 2b)

-4.5 A

– VDS

I

-100

(A)

-30

DR

-10

-4 V

-3

Drain reverse current I

-1 0 0.4 0.6 0.8 1 1.20.2

-2 V

Drain-source voltage VDS (V)

DR

-1 V

Common source Ta = 25°C Pulse test

VGS = -0 V

– Ta

V

-2.0

-1.6

(V)

th

-1.2

-0.8

-0.4

Gate threshold voltage V

0

-80 -40 0 40 80 160120

Ambient temperature Ta (°C)

th

Common source

VDS = -10 V

ID = -200 mA

Pulse test

Dynamic input/output characteristics

VGS

-10

-8

-6

-4

-2

0

(V)

GS

Gate-source voltage V

-20 Common source

ID = -6 A Ta = 25°C Pulse test

-16

(V)

DS

-12

V

Drain-source voltage V

DS

-8

-4

0

4 6 8 10

Total gate charge Qg (nC)

-8 V

VDD = -16 V

12 16 18

14 2

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TPC6101

1000

300

100

(°C/W)

th

30

10

Device mounted on a glass-

epoxy board (b) (Note 2b)

3

1

Transient thermal impedance r

0.3

0.1

0.001 0.01 0.1 10 100 1000

-100

Safe operating area

-10

(A)

D

-3

-1

-0.3

Drain current I

-0.1

10 ms*

1 ms*

ID max (pulse)*

-30

-0.03

-0.01

*: Single pulse Ta = 25°C

Curves must be derated

-0.003 linearly with increase in

temperature

-0.001

-0.01 -0.03 -0.1 -0.3 -1 -3 -10 -100-30

Drain-source voltage VDS (V)

V

DSS

max

- tw

r

th

Device mounted on a glass-

epoxy board (a) (Note 2a)

1

Pulse tw (s)

Single pulse

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TPC6101

A

RESTRICTIONS ON PRODUCT USE

· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.

· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

000707EA

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2002-01-17

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