Page 1
Ordering Information
TP2635
TP2640
Low Threshold
P-Channel Enhancement-Mode
Vertical DMOS FETs
BV
/R
DSS
BV
DGS
-350V 15Ω -2.0V -0.7A – TP2635N3 —
-400V 15Ω -2.0V -0.7A TP2640LG TP2640N3 TP2640ND
†
MIL visual screening available.
DS(ON)
(max) (max) (min) SO-8 TO-92 Die
Features
❏ Low threshold — -2.0V max.
❏ High input impedance
❏ Low input capacitance
❏ Fast switching speeds
❏ Low on resistance
❏ Free from secondary breakdown
❏ Low input and output leakage
❏ Complementary N- and P-channel devices
Applications
❏ Logic level interfaces – ideal for TTL and CMOS
❏ Solid state relays
❏ Battery operated systems
❏ Photo voltaic drives
❏ Analog switches
❏ General purpose line drivers
❏ Telecom switches
V
GS(th)
I
D(ON)
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Package Options
Order Number / Package
S G D
TO-92
†
1
NC D
Absolute Maximum Ratings
Drain-to-Source Voltage BV
Drain-to-Gate Voltage BV
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
DSS
DGS
Note: See Package Outline section for dimensions.
1
2
NC D
3
SD
4
GD
SO-8
top view
8
7
6
5
Page 2
Thermal Characteristics
Package ID (continuous)* ID (pulsed) Power Dissipation
@ TC = 25°C °C/W °C/W
SO-8 -210mA -1.25A 1.3W
†
TO-92 -180mA -0.8A 1.0W 125 170 -180mA -0.8A
* I
(continuous) is limited by max rated Tj.
D
†
Mounted on FR4 board, 25mm x 25mm x 1.57mm.
θ
jc
24 96
θ
ja
†
IDR*I
-210mA -1.25A
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol Parameter Min Typ Max Unit Conditions
BV
DSS
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Drain-to-Source
Breakdown Voltage
TP2640 -400 V VGS = 0V, ID = -2.0mA
TP2635 -350
Gate Threshold Voltage -0.8 -2.0 V VGS = VDS, ID= -1.0mA
Change in V
with Temperature 5.0 mV/°CVGS = VDS, ID= -1.0mA
GS(th)
Gate Body Leakage -100 nA VGS = ± 20V, VDS = 0V
Zero Gate Voltage Drain Current -1 µAV
-10 µAV
= 0V, VDS = -100V
GS
= 0V, VDS = Max Rating
GS
-1 mA VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
ON-State Drain Current 0.7 VGS = -10V, VDS = -25V
Static Drain-to-Source
ON-State Resistance
12 15 VGS = -2.5V, ID = -20mA
11 15 V
A
Ω
= -4.5V, ID = -150mA
GS
11 15 VGS = -10V, ID = -300mA
Change in R
Forward Transconductance 200 m VDS = -25V, ID = -300mA
Input Capacitance 300
Common Source Output Capacitance 50 pF
with Temperature 0.75 %/°CVGS = -10V, ID = -300mA
DS(ON)
Ω
VGS = 0V, VDS = -25V
f = 1 MHz
Reverse Transfer Capacitance 12
Turn-ON Delay Time 10
= -25V,
V
Rise Time 15
Turn-OFF Delay Time 60
ns
DD
= -300mA,
I
D
= 25Ω
R
GEN
Fall Time 40
Diode Forward Voltage Drop -1.8 V VGS = 0V, ISD = -200mA
Reverse Recovery Time 300 ns VGS = 0V, ISD = -200mA
TP2635/TP2640
DRM
Switching Waveforms and Test Circuit
INPUT
OUTPUT
0V
-10V
0V
V
DD
10%
t
d(ON)
t
(ON)
t
r
10%
90%
90%
t
d(OFF)
t
(OFF)
90%
10%
t
F
2
PULSE
GENERATOR
R
gen
INPUT
D.U.T.
OUTPUT
R
L
V
DD
Page 3
Typical Performance Curves
TP2635/TP2640
-2.0
-1.6
-1.2
(amperes)
-0.8
D
I
-0.4
0
0
1.0
0.8
Output Characteristics
VGS = -10V
-4V
-3V
-10
-20
-30 -50-40
VDS(volts)
Transconductance vs. Drain Current
-8V
-6V
Saturation Characteristics
-1.0
-0.8
-0.6
-0.4
(amperes)
D
I
-0.2
0
0-2-4-6 -10-8
V
DS
Power Dissipation vs. Temperature
2.0
1.6
-8V
-6V
VGS = -10V
-4V
-3V
(volts)
0.6
(siemens)
0.4
FS
G
0.2
0
0 -0.8-0.4
-10
-1.0
-0.1
(amperes)
D
I
VDS = -25V
TA = -55°C
25°C
125°C
-1.2 -2.0-1.6
ID(amperes)
Maximum Rated Safe Operating Area
SO-8 (pulsed)
SO-8
(DC)
TO-92 (DC)
TO-92 (pulsed)
1.2
D
0.8
P (watts)
0.4
1.0
0.8
0.6
0.4
0
SO-8
TO-92
0 15010050
TCC)°(
Thermal Response Characteristics
1257525
-0.01
-0.001
-1 -1000-100-10
TC = 25°C
VDS(volts)
0.2
Thermal Resistance (normalized)
0
0.001 100.01 0.1 1.0
3
TO-92
TC = 25°C
PD = 1.0W
tp(seconds)
Page 4
Typical Curves
BV
Variation with Temperature
DSS
1.1
1.0
DSS
BV (normalized)
0.9
-50 0 50 100 150
TP2635/TP2640
On-Resistance vs. Drain Current
30
24
VGS = -2.5V
VGS = -4.5V
18
(ohms)
12
DS(ON)
R
6
0
0 -0.4 -0.8 -1.2 -2.0-1.6
I
C)°(T
j
(amperes)
D
VGS = -10V
Transfer Characteristics
-2.0
= -25V
V
DS
-1.6
= -55°C
T
A
-1.2
(amperes)
-0.8
D
I
-0.4
0
0-2-4-6-8-10
(volts)
V
GS
25°C
Capacitance vs. Drain-to-Source Voltage
400
f = 1MHz
300
200
C (picofarads)
100
0
0 -10 -20 -30 -40
VDS(volts)
+125°C
C
ISS
C
OSS
C
RSS
VTH and RDS Variation with Temperature
1.2
V
@ -1mA
(th)
1.0
0.8
GS(th)
0.6
V (normalized)
0.4
-50 0 50 100 150
R
T
j
DS(ON)
C)°(
@ -10V, -0.3A
Gate Drive Dynamic Characteristics
-10
-8
-6
V
= -10V
(volts)
GS
-4
V
-2
263pF
0
012
Q (nanocoulombs)
G
DS
3
678pF
V
= -40V
DS
45
2.5
2.0
1.5
1.0
0.5
0
DS(ON)
R (normalized)
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
11/12/01
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
4
www.supertex.com
Loading...