Datasheet TP2520N8, TP2522ND, TP2522N8 Datasheet (Supertex)

P-Channel Enhancement-Mode

TO-243AA

(SOT-89)

Vertical DMOS FETs

Ordering Information

BV

/R

DSS

BV

DGS

-200V 12Ω -2.4V -0.75A TP2520N8 —

-220V 12Ω -2.4V -0.75A TP2522N8 TP2522ND

* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

†

MIL visual screening available.

DS(ON)

(max) (max) (min) TO-243AA* Die

V

GS(th)

I

D(ON)

Features

❏ Low threshold — -2.4V max.

❏ High input impedance

❏ Low input capacitance — 125pF max.

❏ Fast switching speeds

❏ Low on resistance

❏ Free from secondary breakdown

❏ Low input and output leakage

❏ Complementary N- and P-channel devices

Applications

❏ Logic level interfaces – ideal for TTL and CMOS

❏ Solid state relays

❏ Battery operated systems

❏ Photo voltaic drives

❏ Analog switches

Order Number / Package

Product marking for TO-243AA

TP5C❋

Where ❋ = 2-week alpha date code

Low Threshold DMOS Technology

These low threshold enhancement-mode (normally-off) transis­tors utilize a vertical DMOS structure and Supertex's well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transis­tors and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.

Package Option

TP2520
TP2522

Low Threshold

†

❏ General purpose line drivers

❏ Telecom switches

Absolute Maximum Ratings

Drain-to-Source Voltage BV
Drain-to-Gate Voltage BV
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C

* Distance of 1.6 mm from case for 10 seconds.

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

DSS

DGS

G

D

S

Note: See Package Outline section for dimensions.

1

D

Thermal Characteristics

TP2520/TP2522

Package ID (continuous)* ID (pulsed) Power Dissipation

θ

jc

θ

ja

IDR*I

@ TA = 25°C °C/W °C/W

TO-243AA -260mA -2.0A 1.6W 15 78

* I

(continuous) is limited by max rated Tj.

D

†

Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P

increase possible on ceramic substrate.

D

†

-260mA -2.0A

Electrical Characteristics (@ 25°C unless otherwise specified)

Symbol Parameter Min Typ Max Unit Conditions

BV

DSS

V

GS(th)

∆V

GS(th)

I

GSS

I

DSS

I

D(ON)

R

DS(ON)

∆R

DS(ON)

G

FS

C

ISS

C

OSS

C

RSS

t

d(ON)

t

r

t

d(OFF)

t

f

V

SD

t

rr

Notes:

1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2.All A.C. parameters sample tested.

Drain-to-Source
Breakdown Voltage

TP2522 -220

VV

= 0V, ID = -2mA

GS

TP2520 -200

Gate Threshold Voltage -1.0 -2.4 V VGS = VDS, ID= -1mA
Change in V

with Temperature 4.5 mV/°CVGS = VDS, ID= -1mA

GS(th)

Gate Body Leakage -100 nA VGS = ± 20V, VDS = 0V
Zero Gate Voltage Drain Current -10 µAV

= 0V, VDS = Max Rating

GS

-1.0 mA VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C

ON-State Drain Current -0.25 -0.7 VGS = -4.5V, VDS = -25V

-0.75 -2.1 V

Static Drain-to-Source
ON-State Resistance

Change in R

with Temperature 1.7 %/°CVGS = -10V, ID = -200mA

DS(ON)

10 15 Ω VGS = -4.5V, ID = -100mA

8.0 12 VGS = -10V, ID = -200mA

Forward Transconductance 100 250 m VDS = -25V, ID = -200mA

A

= -10V, VDS = -25V

GS

Ω

Input Capacitance 75 125

= 0V, VDS = -25V

V

Common Source Output Capacitance 20 85 pF
Reverse Transfer Capacitance 10 35
Turn-ON Delay Time 10

ns

Rise Time 15
Turn-OFF Delay Time 20

GS

f = 1 MHz

VDD = -25V,
ID = -0.75A,

= 25Ω

R

GEN

Fall Time 15
Diode Forward Voltage Drop -1.8 V VGS = 0V, ISD = -0.5A
Reverse Recovery Time 300 ns VGS = 0V, ISD = -0.5A

DRM

Switching Waveforms and Test Circuit

INPUT

OUTPUT

0V

-10V

0V

V

DD

10%

t

d(ON)

t

(ON)

t

r

10%

90%

90%

t

d(OFF)

t

(OFF)

90%

10%

t

F

2

PULSE

GENERATOR

R

gen

INPUT

D.U.T.

OUTPUT

R

L

V

DD

Typical Performance Curves

TP2520/TP2522

Output Characteristics

-2.5

VGS = -10V

-2.0

-1.5

(amperes)

-1.0

D

I

-0.5

0

0 -10 -20 -30 -50-40

V

DS

Tr ansconductance vs. Drain Current

1.0

VDS = -25V

0.8

Saturation Characteristics

-2.0

-8V

-1.6

-1.2

-6V

(amperes)

-0.8

D

I

-4V

-0.4

-3V

0

0-2-4-6 -10-8

(volts) V

Power Dissipation vs. Ambient Temperature

2.0

TO-243AA

VGS = -10V

(volts)

DS

-8V

-6V

-4V

-3V

0.6

(siemens)

0.4

FS

G

0.2

0

0 -2.0-0.4

-10

TO-243AA (pulsed)

-1.0

(amperess)

D

I

-0.1

TO-243AA (DC)

TA = -55°C

TA = 25°C

TA = 125°C

-0.8 -1.2 -1.6

(amperes)

D

Maximum Rated Safe Operating Area

TA = 25°C

(watts)

D

P

Thermal Resistance (normalized)

1.0

0

1.0

0.8

0.6

0.4

0.2

0 15010050

T

(°C)I

A

Thermal Response Characteristics

TO-243AA
T

A

P

D

1257525

= 25°C

= 1.6W

-0.01

-1 -1000-100-10

0

0.001 100.01 0.1 1

V

(volts) t

DS

3

(seconds)

P

Typical Performance Curves

BV

Variation with Temperature

DSS

1.1

1.0

(normalized)

DSS

BV

0.9

-50 0 50 100 150

T

(°C) I

j

Transfer Characteristics

-2.5

V

= -25V

DS

-2.0

-1.5

(amperes)

-1.0

D

I

-0.5

0

0-2-4-6-8-10

TA = -55°C

(volts)

GS

25°C

125°C

On-Resistance vs. Drain Current

50

40

VGS = -4.5V

30

(ohms)

20

DS(ON)

R

10

0

0 -0.5 -1.0 -1.5 -2.5-2.0

V

and R

(th)

1.2

1.1

1.0

V

(normalized)

GS(th)

V

(th)

0.9

0.8

-50 0 50 100 150

DS

R

@ -1mA

VGS = -10V

(amperes)

D

Variation with Temperature

@ -10V, -0.2A

DS(ON)

Tj (°C)V

TP2520/TP2522

2.5

2.0

1.5

(normalized)

1.0

DS(ON)

R

0.5

0

Capacitance vs. Drain-to-Source Voltage

200

f = 1MHz

150

100

C

ISS

C (picofarads)

50

C

RSS

0

0 -10 -20 -30 -40

V

(volts)

DS

©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.

C

OSS

Gate Drive Dynamic Characteristics

-10

-8

-6

VDS = -10V

VDS = -40V

(volts)

GS

-4

V

-2

200pF

73pF

0

0 0.5 1.0

(nanocoulombs)

Q

G

1.5

2.0 2.5

11/12/01

1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: [phone] • FAX: [phone]

4

www.supertex.com