Datasheet TP2522 Datasheet (Supertex)

P-Channel Enhancement Mode Vertical DMOS FETs

TP2522

Features

Low threshold — -2.4V max.

►

High input impedance

►

Low input capacitance — 125pF max.

►

Fast switching speeds

►

Low ON-resistance

►

Free from secondary breakdown

►

Low input and output leakage

►

Complementary N and P-channel devices

►

Applications

Logic level interfaces – ideal for TTL and CMOS

►

Solid state relays

►

Battery operated systems

►

Photo voltaic drives

►

Analog switches

►

General purpose line drivers

►

Telecom switches

►

Ordering Information

R

BV

/BV

DSS

DGS

(V)

-220 12 -2.4 -0.75 TP2522N8-G TP2522ND

-G indicates package is RoHS compliant (‘Green’) * MIL visual screening available.

DS(ON)

max

(Ω)

V

GS(th)

max

(V)

I

D(ON)

min

(A)

General Description

This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefﬁ cient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermallyinduced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Package Options

TO-243AA (SOT-89) Die*

Pin Conﬁ guration

Absolute Maximum Ratings

Parameter Value

Drain-to-source voltage BV

Drain-to-gate voltage BV

Gate-to-source voltage ±20V

Operating and storage temperature -55°C to +150°C

Soldering temperature* 300°C

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground.

* Distance of 1.6 mm from case for 10 seconds.

DSS

DGS

DRAIN

TO-243AA (SOT-89) (N8)

Product Marking

TP5CW

W = Code for week sealed

TO-243AA (SOT-89) (N8)

GATE

SOURCE

DRAIN

Thermal Characteristics

Power Dissipation

@ TA = 25OC

(W)

O

C/W

θ

jc

Package

I

D

(continuous)*

(mA)

I

D

(pulsed)

(A)

TO-243AA (SOT-89) -260 -2.0 1.6 15 78

* ID (continuous) is limited by max rated Tj . † Mounted on FR5 board, 25mm x 25mm x 1.57mm.

O

C/W

TP2522

θ

a

j

†

IDR*

(mA)

I

DRM

(A)

-260 -2.0

Electrical Characteristics (T

= 25°C unless otherwise speciﬁ ed)

A

Symbol Parameter Min Typ Max Units Conditions

BV

V

∆V

I

GSS

DSS

GS(th)

Drain-to-source breakdown voltage -220 - - V VGS = 0V, ID = -2.0mA

Gate threshold voltage -1.0 - -2.4 V VGS = VDS, ID= -1.0mA

Change in V

with temperature - - 4.5 mV/OCVGS = VDS, ID= -1.0mA

GS(th)

Gate body leakage - - -100 nA VGS = ± 20V, VDS = 0V

--10 μAVGS = 0V, VDS = Max Rating

I

DSS

I

D(ON)

R

DS(ON)

∆R

DS(ON)

G

FS

C

ISS

C

OSS

C

RSS

t

d(ON)

t

r

t

d(OFF)

t

f

V

SD

t

rr

Notes:

(1) All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) (2) All A.C. parameters sample tested.

Zero gate voltage drain current -

ON-state drain current

-0.25 -0.7 -

-0.75 -2.1 - VGS = -10V, VDS = -25V

Static drain-to-source ON-State resistance

Change in R

with temperature - - 1.7 %/OCVGS = -10V, ID = -200mA

DS(ON)

-

-1.0 mA

A

-

10 15

8.0 12 VGS = -10V, ID = -200mA

Ω

VGS = 0V, VDS = 0.8 Max Rating, TA = 125°C

VGS = -4.5V, VDS = -25V

VGS = -4.5V, ID = -100mA

Forward transconductance 100 250 - mmho VDS = -25V, ID = -200mA

Input capacitance - 75 125

Common source output capacitance - 20 85

Reverse transfer capacitance - 10 35

pF

VGS = 0V, VDS = -25V, f = 1.0 MHz

Turn-ON delay time - - 10

Rise time - - 15

Turn-OFF delay time - - 20

ns

VDD = -25V, ID = -0.75A, R

= 25Ω

GEN

Fall time - - 15

Diode forward voltage drop - - -1.8 V VGS = 0V, ISD = -0.5A

Reverse recovery time - 300 - ns VGS = 0V, ISD = -0.5A

Switching Waveforms and Test Circuit

0V

-10V

V

10%

t

(ON)

t

d(ON)

r

0V

DD

10%

90%

t

d(OFF)

t

(OFF)

90%

t

F

10%

INPUT

OUTPUT

PULSE

GENERATOR

R

GEN

D.U.T.

INPUT

2

Output

R

L

V

DD

Typical Performance Curves

TP2522

-2.5

VGS = -10V

Output Characteristics

-2.0

)serepma(

-1.5

-1.0

D

I

-0.5

0

0 -10 -20 -30 -50-40

V

DS

Transconductance vs. Drain Current

1.0

VDS = -25V

0.8

)snemeis

0.6

TA = -55°C

(

SF

0.4

G

0.2

TA = 25°C

TA = 125°C

-8V

-6V

-4V

-3V

Saturation Characteristics

-2.0

-1.6

)s

-1.2

er

VGS = -10V

ep m

a(

-0.8

D

I

-0.4

0

0-2-4-6 -10-8

(volts)

V

DS

Power Dissipation vs. Ambient Temperature

2.0

TO-243AA

)st t

aw(

1.0

D

P

-8V

-6V

-4V

-3V

0

0 -2.0-0.4

-10

-1.0

)s s

ere p

ma(

D

I

-0.1

-0.01

-1 -1000-100-10

-0.8 -1.2 -1.6

Maximum Rated Safe Operating Area

TA = 25°C

TO-243AA (pulsed)

TO-243AA (DC)

V

DS

0

015010050

T

(°C)ID(amperes)

A

1257525

Thermal Response Characteristics

1.0

)dezilamron( ecnatsiseR lamr

0.8

0.6

0.4

TO-243AA

T

= 25°C

0.2

e hT

0

0.001 100.01 0.1 1

A

P

= 1.6W

D

tP(seconds)

3

Typical Performance Curves (cont.)

BV

Variation with Temperature

DSS

1.1

)dezilamron(

1.0

SSD

VB

0.9

-50 0 50 100 150

T

(°C) I

j

Transfer Characteristics

-2.5

V

= -25V

DS

-2.0

)serepma(

-1.5

-1.0

D

I

-0.5

0

0 -2 -4 -6 -8 -10

TA = -55°C

25°C

125°C

50

40

VGS = -4.5V

)sm

On-Resistance vs. Drain Current

30

ho(

) NO(

20

S D

R

10

0

0 -0.5 -1.0 -1.5 -2.5-2.0

V

and RDSVariation with Temperature

(th)

1.2

)

1.1

de z

ilamron(

1.0

V

@ -1mA

)ht (

SG

V

(th)

0.9

0.8

-50 0 50 100 150

R

(amperes)

D

DS(ON)

VGS = -10V

@ -10V, -0.2A

Tj (°C)VGS(volts)

TP2522

2.5

2.0

) dez

i

l

1.5

amr

on(

)

1.0

NO (S

D

R

0.5

0

Capacitance vs. Drain-to-Source Voltage

200

f = 1MHz

150

)sdarafocip(

100

C

50

C

RSS

0

0 -10 -20 -30 -40

V

(volts)

DS

Gate Drive Dynamic Characteristics

-10

-8

)st

-6

l ov(

C

ISS

C

OSS

SG

-4

V

-2

0

0 0.5 1.0

73pF

VDS = -10V

Q

(nanocoulombs)

G

200pF

1.5

VDS = -40V

2.0 2.5

4

3-Lead TO-243AA (SOT-89) Package Outline (N8)

TP2522

Symbol A b b1 C D D1 E E1 e e1 H L

MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.13

Dimensions

(mm)

JEDEC Registration TO-243, Variation AA, Issue C, July 1986. Drawings not to scale.

Doc.# DSFP - TP2522 A101507

NOM-------- --

MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 4.25 1.20

3.94 0.89

1.50

BSC

5

3.00

BSC