Page 1
P-Channel Enhancement-Mode
TO-243AA
(SOT-89)
Vertical DMOS FETs
Ordering Information
BV
/R
DSS
BV
DGS
-100V 3.5Ω -2.4V -1.5A TP2510N8 TP2510ND
* Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
†
MIL visual screening available.
DS(ON)
(max) (max) (min) TO-243AA* Die
V
GS(th)
I
D(ON)
Order Number / Package
Product marking for TO-243AA
TP2510
Low Threshold
†
Features
❏ Low threshold — -2.4V max.
❏ High input impedance
❏ Low input capacitance — 125pF max.
❏ Fast switching speeds
❏ Low on resistance
❏ Free from secondary breakdown
❏ Low input and output leakage
❏ Complementary N- and P-channel devices
Applications
❏ Logic level interfaces – ideal for TTL and CMOS
❏ Solid state relays
❏ Battery operated systems
❏ Photo voltaic drives
❏ Analog switches
❏ General purpose line drivers
❏ Telecom switches
TP5A❋
Where ❋ = 2-week alpha date code
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's wellproven silicon-gate manufacturing process. This combination
produces devices with the power handling capabilities of bipolar
transistors and with the high input impedance and positive
temperature coefficient inherent in MOS devices. Characteristic
of all MOS structures, these devices are free from thermal
runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very low
threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Package Option
Absolute Maximum Ratings
Drain-to-Source Voltage BV
Drain-to-Gate Voltage BV
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
DSS
DGS
G
D
S
Note: See Package Outline section for dimensions.
1
D
Page 2
Thermal Characteristics
Package ID (continuous)* ID (pulsed) Power Dissipation
@ TA = 25°C °C/W °C/W
TO-243AA -480mA -2.5A 1.6W
ID (continuous) is limited by max rated Tj.
*
†
Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
†
θ
jc
θ
15 78
ja
†
IDR*I
-480mA -2.5A
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol Parameter Min Typ Max Unit Conditions
BV
DSS
Drain-to-Source
Breakdown Voltage
-100 V VGS = 0V, ID = -2.0mA
TP2510
DRM
V
∆V
I
GSS
I
DSS
GS(th)
GS(th)
Gate Threshold Voltage -1.0 -2.4 V VGS = VDS, ID= -1.0mA
Change in V
with Temperature 5.0 mV/°CVGS = VDS, ID= -1.0mA
GS(th)
Gate Body Leakage -100 nA VGS = ± 20V, VDS = 0V
Zero Gate Voltage Drain Current -10 µAV
-1.0 mA V
I
D(ON)
ON-State Drain Current -0.4 -0.6 VGS = -5.0V, VDS = -25V
-1.5 -2.5 V
R
DS(ON)
Static Drain-to-Source
ON-State Resistance
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Change in R
with Temperature 1.7 %/°CVGS = -10V, ID = -0.75A
DS(ON)
Forward Transconductance 300 360 m VDS = -25V, ID = -0.75A
Input Capacitance 80 125
Common Source Output Capacitance 40 70 pF
Reverse Transfer Capacitance 10 25
Turn-ON Delay Time 10
Rise Time 15
Turn-OFF Delay Time 20
Fall Time 15
Diode Forward Voltage Drop -1.8 V VGS = 0V, ISD = -1.0A
Reverse Recovery Time 300 ns VGS = 0V, ISD = -1.0A
5.0 7.0 VGS = -5.0V, ID = -250mA
2.0 3.5 VGS = -10V, ID = -0.75A
= 0V, VDS = Max Rating
GS
= 0V, VDS = 0.8 Max Rating
GS
T
= 125°C
A
A
= -10V, VDS = -25V
GS
Ω
Ω
= 0V, VDS = -25V
V
GS
f = 1.0 MHz
VDD = -25V,
ns ID = -1.0A,
R
= 25Ω
GEN
Switching Waveforms and Test Circuit
INPUT
OUTPUT
0V
-10V
0V
V
DD
10%
t
d(ON)
t
(ON)
t
r
10%
90%
90%
t
d(OFF)
t
(OFF)
90%
10%
t
F
2
PULSE
GENERATOR
R
gen
INPUT
D.U.T.
OUTPUT
R
L
V
DD
Page 3
Typical Performance Curves
TP2510
Output Characteristics
-5
-4
-3
(amperes)
-2
D
I
-1
0
0 -10 -20 -30 -50-40
VDS (volts)
Transconductance vs. Drain Current
0.5
0.4
V
= -25V
DS
TA = -55°C
VGS = -10V
-8V
-6V
-4V
-3V
Saturation Characteristics
-5
-4
-3
(amperes)
-2
D
I
-1
0
0-2-4-6 -10-8
VGS = -10V
VDS (volts)
Power Dissipation vs. Ambient Temperature
2.0
TO-243AA
-8V
-6V
-4V
-3V
0.3
(siemens)
0.2
FS
G
0.1
0
0 -2.5-0.5 -1.0 -1.5 -2.0
TA = 25°C
TA = 125°C
ID (amperes) TA (°C)
Maximum Rated Safe Operating Area
-10
TO-243AA(pulsed)
-1.0
TO-243AA (DC)
(amperes)
D
I
-0.1
TA = 25°C
1.0
(watts)
D
P
0
0 15010050
Thermal Response Characteristics
1.0
0.8
0.6
0.4
0.2
Thermal Resistance (normalized)
1257525
TO-243AA
= 25°C
T
A
PD = 1.6W
-0.01
-0.1 -100-10-1.0
VDS (volts)
0
0.001 100.01 0.1 1
tp (seconds)
3
Page 4
Typical Performance Curves
BV
Variation with Temperature
DSS
1.1
TP2510
On-Resistance vs. Drain Current
10
V
= -5V
8
GS
1.0
(normalized)
DSS
BV
0.9
-50 0 50 100 150
Tj (°C)
Transfer Characteristics
-5
= -25V
V
DS
-4
-3
(amperes)
-2
D
I
-1
25°C
= -55°C
T
A
150°C
6
(ohms)
4
DS(ON)
R
2
0
0 -0.8 -1.6 -2.4 -4.0-3.2
I
(amperes)
D
V
and RDS Variation with Temperature
(th)
1.4
1.2
1.0
(normalized)
0.8
GS(th)
V
0.6
R
DS (ON)
@ -10V, -0.75A
V
(th)
VGS = -10V
@ -1mA
2.0
1.6
1.2
0.8
0.4
(normalized)
DS(ON)
R
0
0-2-4-6-8-10
(volts)
V
0
GS
Capacitance vs. Drain-to-Source Voltage
200
f = 1MHz
150
100
C
ISS
C (picofarads)
50
0
0 -10 -20 -30 -40
C
C
OSS
RSS
VDS (volts)
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
0.4
-50 0 50 100 150
T
(°C)
j
0
Gate Drive Dynamic Characteristics
-10
142 pF
-8
-6
(volts)
GS
-4
V
-2
0
0
71 pF
V
= -10V
DS
VDS = -40V
1.0
2.0
QG (nanocoulombs)
11/12/01
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
4
www.supertex.com
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