Page 1
P-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
/R
BV
DSS
BV
DGS
-40V 6.0Ω -2.0V TP2104K1 TP2104N3 TP2104ND
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
DS(ON)
(max) (max)
V
GS(th)
TO-236AB* TO-92 Die
Order Number/Package
TP2104
Low Threshold
Product marking for SOT-23:
P1L❋
where ❋ = 2-week alpha date code
Features
❏ Free from secondary breakdown
❏ Low power drive requirement
❏ Ease of paralleling
❏ Low C
❏ Excellent thermal stability
❏ Integral Source-Drain diode
❏ High input impedance and high gain
❏ Complementary N- and P-channel devices
and fast switching speeds
ISS
Applications
❏ Logic level interfaces – ideal for TTL and CMOS
❏ Solid state relays
❏ Battery operated systems
❏ Photo voltaic drives
❏ Analog switches
❏ General purpose line drivers
❏ Telecom switches
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage BV
Drain-to-Gate Voltage BV
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
DSS
DGS
Note: See Package Outline section for dimensions.
1
SDG
TO-236AB
(SOT-23)
top view
S G D
TO-92
Page 2
Thermal Characteristics
Package ID (continuous)* ID (pulsed) Power Dissipation
@ TA = 25°C °C/W °C/W
SOT-23 -0.16A -0.8A 0.36W 200 350 -0.16A -0.8A
TO-92 -0.25A -1.0A 0.74W 125 170 -0.25A -1.0A
* I
(continuous) is limited by max rated Tj.
D
θ
jc
θ
ja
IDR*I
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol Parameter Min Typ Max Unit Conditions
BV
DSS
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Drain-to-Source Breakdown Voltage -40 V VGS = 0V, ID = -1.0mA
Gate Threshold Voltage -1.0 -2.0 V VGS = VDS, ID = -1.0mA
Change in V
with Temperature 5.8 6.5 mV/°CV
GS(th)
GS
= V
DS, ID
= -1.0mA
Gate Body Leakage -1.0 -100 nA VGS = ±20V, VDS = 0V
Zero Gate Voltage Drain Current -10 µAV
-1 mA V
= 0V, VDS = Max Rating
GS
= 0V, VDS = 0.8 Max Rating
GS
= 125°C
T
A
ON-State Drain Current -0.6 A VGS = -10V, VDS = -25V
Static Drain-to-Source
ON-State Resistance
Change in R
with Temperature 0.55 1.0 %/°CV
DS(ON)
Forward Transconductance 150 200 m VDS = -25V, ID = -0.5A
10.0 Ω VGS = -4.5V, ID = -50mA
6.0 Ω V
= -10V, ID = -0.5A
GS
= -10V, ID = -0.5A
GS
Ω
Input Capacitance 35 60
Common Source Output Capacitance 22 30 pF
VGS = 0V, VDS = -25V
f = 1 MHz
Reverse Transfer Capacitance 8 10
Turn-ON Delay Time 4 6
= -25V
V
R
DD
GEN
= 25Ω
Rise Time 4 8
Turn-OFF Delay Time 5 9
ns ID = -0.5A
Fall Time 5 8
Diode Forward Voltage Drop -1.2 -2.0 V VGS = 0V, ISD = -0.5A
Reverse Recovery Time 400 ns VGS = 0V, ISD = -0.5A
TP2104
DRM
Switching Waveforms and Test Circuit
INPUT
OUTPUT
0V
-10V
0V
V
DD
10%
t
d(ON)
t
(ON)
t
r
10%
90%
90%
t
d(OFF)
t
(OFF)
90%
10%
t
F
2
PULSE
GENERATOR
R
gen
INPUT
D.U.T.
OUTPUT
R
L
V
DD
Page 3
Typical Performance Curves
TP2104
Output Characteristics
-2.0
-1.6
-1.2
(amperes)
-0.8
D
I
-0.4
0
0 -10 -20 -30 -50-40
V
DS
Transconductance vs. Drain Current
0.5
V
= -25V
0.4
DS
(volts)
VGS = -10V
-8V
-6V
-4V
-3V
Saturation Characteristics
-2.0
-1.6
-1.2
-0.8
(amperes)
D
I
-0.4
0
0-2-4-6 -10-8
V
DS
Power Dissipation vs. Temperature
1.0
0.8
TO-92
(volts)
V
GS
= -10V
-8V
-6V
-4V
-3V
0.3
(siemens)
0.2
FS
G
0.1
0
0 -0.2 -0.4 -0.6 -1.0-0.8
TA = -55°C
ID (amperes) TA (°C)
Maximum Rated Safe Operating Area
-1.0
SOT-23 (pulsed)
SOT-23 (DC)
-0.1
(amperes)
I
D
-0.01
TA = 25°C
25°C
125°C
0.6
(watts)
D
0.4
P
0.2
1.0
0.8
0.6
0.4
0
SOT-23
0 15010050
Thermal Response Characteristics
SOT-23
T
= 25°C
A
PD = 0.36W
1257525
-0.001
-0.1 -100-10-1.0
0.2
Thermal Resistance (normalized)
TO-92
P
= 1W
D
TC = 25°C
0
0.001 100.01 0.1 1.0
V
(volts)
DS
tp (seconds)
3
Page 4
Typical Performance Curves
Variation with Temperature
BV
DSS
1.1
TP2104
On-Resistance vs. Drain Current
20
1.0
DSS
BV (normalized)
0.9
-50 0 50 100 150
C)°(T
j
Transfer Characteristics
-2.0
VDS= -25V
-1.6
-1.2
(amperes)
-0.8
D
I
-0.4
0
0-2-4-6-8-10
V
T
A
GS
= -55°C
125°C
25°C
(volts)
16
12
(ohms)
8
DS(ON)
R
4
0
0 -0.4 -0.8 -1.2 -2.0-1.6
V
1.2
1.1
1.0
0.9
GS(th)
V (normalized)
0.8
0.7
-50 0 50 100 150
VGS= -4.5V
VGS= -10V
(amperes)
I
D
and R Variation with Temperature
DS(ON)GS(th)
R
@ -10V, -0.5A
DS(ON)
V @ -1mA
GS(th)
T
C)°(
j
1.6
1.4
1.2
1.0
0.8
DS(ON)
R (normalized)
Capacitance vs. Drain-to-Source Voltage
100
f = 1MHz
75
50
C
C (picofarads)
25
C
RSS
0
0 -10 -20 -30 -40
C
OSS
ISS
VDS(volts)
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
Gate Drive Dynamic Characteristics
-10
-8
-6
VDS= -10V
(volts)
GS
-4
V
VDS= -40V
125 pF
-2
35 pF
0
0 0.5 1.0
Q (nanocoulombs)
G
1.5
2.0 2.5
11/12/01
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
4
www.supertex.com
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