Datasheet tp2104 Datasheet

● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

P-Channel Enhancement Mode

P1LW

W = Code for week sealed = “Green” Packagin

g

DRAIN

SOURC

E

GATE

SOURCE

DRAIN

YY = Year Sealed WW = Week Sealed = “Green” Packaging

S i T P

2 1 0 4

Y Y W W

Vertical DMOS FETs

TP2104

Features

High input impedance and high gain

►

Low power drive requirement

►

Ease of paralleling

►

Low C

►

Excellent thermal stability

►

Integral source-drain diode

►

Free from secondary breakdown

►

and fast switching speeds

ISS

General Description

This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefﬁcient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermallyinduced secondary breakdown.

Applications

Logic level interfaces - ideal for TTL and CMOS

►

Solid state relays

►

Analog switches

►

Power management

►

Telecom switches

►

Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Ordering Information

Package Options

Device

TO-236AB (SOT-23) TO-92

TP2104 TP2104K1-G TP2104N3-G -40 6.0 -2.0

-G indicates package is RoHS compliant (‘Green’)

BV

DSS

/BV

(V)

DGS

R

DS(ON)

(max)

(Ω)

Pin Conﬁguration

V

GS(th)

(max)

(V)

Absolute Maximum Ratings

Parameter Value

Drain-to-source voltage BV

Drain-to-gate voltage BV

Gate-to-source voltage ±20V

Operating and storage temperature -55°C to +150°C

Soldering temperature* +300°C

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground.

* Distance of 1.6mm from case for 10 seconds.

DSS

DGS

TO-92 (N3)

Product Marking

Package may or may not include the following marks: Si or

TO-236AB (SOT-23) (K1)

TO-92 (N3)

Package may or may not include the following marks: Si or

TO-236AB (SOT-23) (K1)

● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

Thermal Characteristics

90%

10%

90%

10%

PULSE

GENERATO

R

V

DD

R

L

Output

D.U.T

.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

F

t

r

INPUT

OUTPUT

0V

V

DD

R

GEN

0V

-10V

Power Dissipation

@ TA = 25OC

(W)

O

C/W

θ

jc

O

C/W

θ

a

j

I

DR

(mA)

†

Package

I

D

(continuous)

(mA)

†

I

D

(pulsed)

(A)

TO-236AB (SOT-23) -160 -0.8 0.36 200 350 -160 -0.8

TO-92 -250 -1.0 0.74 125 170 -250 -1.0

† ID (continuous) is limited by max rated Tj .

TP2104

I

DRM

(A)

Electrical Characteristics (T

= 25°C unless otherwise speciﬁed)

A

Sym Parameter Min Typ Max Units Conditions

BV

V

∆V

GS(th)

I

GSS

Drain-to-source breakdown voltage -40 - - V VGS = 0V, ID = -1.0mA

DSS

Gate threshold voltage -1.0 - -2.0 V VGS = VDS, ID= -1.0mA

Change in V

with temperature - 5.8 6.5 mV/OC VGS = VDS, ID= -1.0mA

GS(th)

Gate body leakage - -1.0 -100 nA VGS = ± 20V, VDS = 0V

- -10 μA VGS = 0V, VDS = Max Rating

I

R

∆R

C

t

d(OFF)

Notes:

1.

2.

I

DSS

D(ON)

DS(ON)

G

FS

ISS

OSS

RSS

d(ON)

t

r

t

V

SD

t

rr

Zero gate voltage drain current -

-

-1.0 mA

VDS = 0.8 Max Rating, VGS = 0V, TA = 125°C

On-state drain current -0.6 - - A VGS = -10V, VDS = -25V

Static drain-to-source on-state resistance

Change in R

with temperature - 0.55 1.0 %/OC VGS = -10V, ID = -500mA

DS(ON)

-

- 10

- 6.0 VGS = -10V, ID = -500mA

Ω

VGS = -4.5V, ID = -50mA

Forward transconductance 150 200 - mmho VDS = -25V, ID = -500mA

Input capacitance - 35 60

Common source output capacitance - 22 30

Reverse transfer capacitance - 8.0 10

pF

VGS = 0V, VDS = -25V, f = 1.0 MHz

Turn-on delay time - 4.0 6.0

Rise time - 4.0 8.0

Turn-off delay time - 5.0 9.0

Fall time - 5.0 8.0

f

ns

VDD = -25V, ID = -500mA, R

GEN

Diode forward voltage drop - -1.2 -2.0 V VGS = 0V, ISD = -500mA

Reverse recovery time - 400 - ns VGS = 0V, ISD = -500mA

All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) All A.C. parameters sample tested.

= 25Ω

Switching Waveforms and Test Circuit

2

● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

Typical Performance Curves

Output Characteristics

-2.0

-1.6

-1.2

-0.8

-0.4

0

Saturation Characteristics

-2.0

-1.6

-1.2

-0.8

-0.4

0

Maximum Rated Safe Operating Area

-0.1 -100-10-1.0

-0.01

-0.1

-1.0

-0.001

Thermal Response Characteristics

)de

zil amron(

ecn

at siseR

l amrehT

1.0

0.8

0.6

0.4

0.2

0

0.001 1

00.01 0.1 1.0

Transconductance vs. Drain Current

Power Dissipation vs. Temperature

0 15010050

1.0

0.8

0.6

0.4

0.2

0

1257525

TO -9 2

SO T- 23

SO T- 23 ( DC )

0 -

10 -20 -30 -50-40

0 -2 -4 -

6 -10-8

SO T- 23 ( pu ls ed )

TA = 25°C

0.5

0.4

0.3

0.2

0.1

0

0 -0.2 -0.4 -0.6 -1.0-0.8

-6V

-4V

-3V

-8V

-6V

-3V

-4V

-8V

TA = -55°C

25°C

125°C

SO T- 23

TA = 2 5°C

PD = 0 .3 6W

VDS(volts)

I

D

)serepma(

VGS = -10V

V

GS

= -10V

VDS(volts)

I

D

) s er

ep m

a(

G

SF

)s n

emeis(

ID (amperes) TA (°C)

P

D

)sttaw(

VDS= -25V

VDS(volts)

I

D

) sere

pm a(

tp (seconds)

TO -9 2

PD = 1 W

TC = 2 5°C

TP2104

3

● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

Typical Performance Curves (cont.)

Gate Drive Dynamic Characteristics

Q (nanocoulombs)

G

V

SG

) s

tlo v

(

T

j

)ht(S

G

V

) d e z

ilamr

o n(

) N O(S

D

R

)de

z

ilamron(

V

DS(ON)GS(th)

and R Variation with Temperature

C)°(

On-Resistance vs. Drain Current

(amperes)

D

)smh

o(

)NO(SD

R

Variation with Temperature

DSS

SSD

)dezi

l amron

(

VB

C)°(T

j

Transfer Characteristics

V

GS

(volts)

I

)sere

pma

(

D

Capacitance vs. Drain-to-Source Voltage

100

) sda

ra fo

cip( C

VDS(volts)

I

BV

0 -10 -20 -30 -40

50

75

25

0

0 -2 -4 -6 -

8 -10

-2.0

-1.6

-1.2

-0.8

-0.4

0

-50 0 50 100 150

1.1

1.0

20

16

12

8

4

0

1.2

1.1

1.0

0.9

0.8

0.7

-1

0

-8

-6

-4

-2

0 0.5 1.0

1.5

2.0 2.5

-50 0

50 100 150

35 pF

VDS= -40V

VDS= -10V

VGS= -4.5V

VGS= -10V

T

= -55

°C

A

VDS= -25V

125

°

C

0 -0.4 -0.8 -1.2 -2.0-1.6

f = 1MHz

C

ISS

C

OSS

C

RSS

0.9

125 pF

1.6

1.4

1.2

1.0

0.8

V @ -1mA

25°C

0

R

DS(ON)

@ -10V, -0.5A

GS(th)

TP2104

4

● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

3-Lead TO-236AB (SOT-23) Package Outline (K1)

View B

Vi

ew A - A

Side View

Top View

View B

2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch

TP2104

Symbol A A1 A2 b D E E1 e e1 L L1 θ

Dimension

(mm)

JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999. † This dimension is a non-JEDEC dimension.

Drawings not to scale. Supertex Doc.#: DSPD-3TO236ABK1, Version B072208.

MIN 0.89 0.01 0.88 0.30 2.80 2.10 1.20

NOM - - 0.95 - 2.90 - 1.30 0.50 -

MAX 1.12 0.10 1.02 0.50 3.04 2.64 1.40 0.60 8

0.95 BSC

1.90

BSC

5

0.20

†

0.54 REF

O

0

O

Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. website: http//www.supertex.com

.

1235 Bordeaux Drive, Sunnyvale, CA 94089

Tel: 408-222-8888

www.supertex.com

3-Lead TO-92 Package Outline (N3)

Seating Plane

1

2

3

Front View

Side View

Bottom View

E1

E

D

e1

L

e

c

1 2 3

b

A

TP2104

Symbol A b c D E E1 e e1 L

†

MIN .170 .014

Dimensions

(inches)

NOM - - - - - - - - -

MAX .210 .022

JEDEC Registration TO-92. * This dimension is not speciﬁed in the original JEDEC drawing. The value listed is for reference only. † This dimension is a non-JEDEC dimension.

Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version D080408.

Doc.# DSFP-TP2104 A022309

.014

.022

†

.175 .125 .080 .095 .045 .500

†

.205 .165 .105 .105 .055 .610*

6