Datasheet TOP225YN Specification

Page 1
TOP221-227
®
TOPSwitch-II
Three-terminal Off-line PWM Switch
Product Highlights
Family
®
• Lowest cost, lowest component count switcher solution
• Cost competitive with linears above 5W
• Very low AC/DC losses – up to 90% efficiency
• Built-in Auto-restart and Current limiting
• Latching Thermal shutdown for system level protection
• Implements Flyback, Forward, Boost or Buck topology
• Works with primary or opto feedback
• Stable in discontinuous or continuous conduction mode
• Source connected tab for low EMI
• Circuit simplicity and Design Tools reduce time to market
Description
The second generation TOPSwitch-II family is more cost effective and provides several enhancements over the first generation TOPSwitch family. The TOPSwitch-II family extends the power range from 100W to 150W for 100/115/230 VAC input and from 50W to 90W for 85-265 VAC universal input. This brings TOPSwitch technology advantages to many new applications, i.e. TV, Monitor, Audio amplifiers, etc. Many significant circuit enhancements that reduce the sensitivity to board layout and line transients now make the design even
OUTPUT POWER TABLE
1
3
Wide Range Input
85 to 265 VAC
P
MAX
7 W
4,6
PART
ORDER
NUMBER
TOP221Y
TO-220 (Y) Package
Single Voltage Input
100/115/230 VAC
4,6
P
MAX
12 W
±15%
AC
IN
D
TOPSwitch
CONTROL
S
Figure 1. Typical Flyback Application.
C
PI-1951-091996
easier. The standard 8L PDIP package option reduces cost in lower power, high efficiency applications. The internal lead frame of this package uses six of its pins to transfer heat from the chip directly to the board, eliminating the cost of a heat sink. TOPSwitch incorporates all functions necessary for a switched mode control system into a three terminal monolithic IC: power MOSFET, PWM controller, high voltage start up circuit, loop compensation and fault protection circuitry.
8L PDIP (P) or 8L SMD (G) Package
PART
ORDER
Single Voltage Input
100/115/230 VAC
NUMBER
TOP221P or TOP221G
.
P
±15%
MAX
9 W
3
Wide Range Input
5,6
2
85 to 265 VAC
P
MAX
6 W
5,6
TOP222Y TOP223Y TOP224Y TOP225Y TOP226Y TOP227Y
25 W 50 W 75 W 100 W 125 W 150 W
15 W 30 W 45 W 60 W 75 W 90 W
TOP222P or TOP222G TOP223P or TOP223G TOP224P or TOP224G
15 W 25 W 30 W
10 W 15 W 20 W
Notes: 1. Package outline: Y03A 2. Package Outline: P08A or G08A 3. 100/115 VAC with doubler input 4. Assumes appropriate heat sinking to keep the maximum TOPSwitch junction temperature below 100˚ C. 5. Soldered to 1 sq. in.( 6.45 cm2), 2 oz. copper clad (610 gm/m2) 6. P in a given application depends on thermal environment, transformer design, efficiency required, minimum specified input voltage, input
is the maximum practical continuous power output level for conditions shown. The continuous power capability
MAX
storage capacitance, etc. 7. Refer to key application considerations section when using TOPSwitch-II in an existing TOPSwitch design.
December 1997
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TOP221-227
CONTROL
Z
C
SHUNT REGULATOR/
ERROR AMPLIFIER
I
FB
OSCILLATOR
R
E
V
C
D
MAX
CLOCK
SAW
0
INTERNAL SUPPLY
POWER-UP
RESET
1
÷ 8
+
-
V
I
MINIMUM
ON-TIME
DELAY
LIMIT
SRQ
Q
SRQ
CONTROLLED
TURN-ON
GATE
DRIVER
LEADING
Q
EDGE
BLANKING
SHUTDOWN/
AUTO-RESTART
­+
5.7 V
5.7 V
4.7 V
THERMAL
SHUTDOWN
COMPARATOR
+
-
­+
PWM
DRAIN
Figure 2. Functional Block Diagram.
Pin Functional Description
DRAIN Pin:
Output MOSFET drain connection. Provides internal bias current during start-up operation via an internal switched high­voltage current source. Internal current sense point.
CONTROL Pin:
Error amplifier and feedback current input pin for duty cycle control. Internal shunt regulator connection to provide internal bias current during normal operation. It is also used as the connection point for the supply bypass and auto-restart/ compensation capacitor.
SOURCE Pin:
Y package – Output MOSFET source connection for high
voltage power return. Primary side circuit common and reference point.
Tab Internally
Connected to Source Pin
TO-220 (YO3A)
1
SOURCE
SOURCE
CONTROL
2
3
4
DRAIN SOURCE
CONTROL
8
SOURCE (HV RTN)SOURCE
7
SOURCE (HV RTN)
6
SOURCE (HV RTN)
5
DRAIN
SOURCE
PI-1935-091696
P and G package – Primary side control circuit common and reference point.
SOURCE (HV RTN) Pin: (P and G package only)
Output MOSFET source connection for high voltage power return.
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DIP-8 (P08A)
SMD-8 (G08A)
Figure 3. Pin Configuration.
PI-2084-052198
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TOP221-227
TOPSwitch
Family Functional Description
TOPSwitch is a self biased and protected linear control current­to-duty cycle converter with an open drain output. High efficiency is achieved through the use of CMOS and integration of the maximum number of functions possible. CMOS process significantly reduces bias currents as compared to bipolar or discrete solutions. Integration eliminates external power resistors used for current sensing and/or supplying initial start­up bias current.
During normal operation, the duty cycle of the internal output MOSFET decreases linearly with increasing CONTROL pin current as shown in Figure 4. To implement all the required control, bias, and protection functions, the DRAIN and CONTROL pins each perform several functions as described below. Refer to Figure 2 for a block diagram and to Figure 6 for timing and voltage waveforms of the TOPSwitch integrated circuit.
I
C
5.7 V
Charging C
4.7 V
V
C
T
0
Auto-restart
I
D
MAX
Duty Cycle (%)
D
MIN
I
CD1
Figure 4. Relationship of Duty Cycle to CONTROL Pin Current.
B
Slope = PWM Gain
2.0 6.0
IC (mA)
PI-2040-050197
DRAIN
V
DRAIN
C
V
IN
5.7 V
4.7 V
V
IN
Off
0
(a)
0
0
I
C
Charging C
Off
T
Switching Switching
I
CD1
Discharging C
8 Cycles
95%
Off
(b)
CT is the total external capacitance
connected to the CONTROL pin
Switching
T
Discharging C
5%
I
CD2
Off
T
PI-1956-092496
Figure 5. Start-up Waveforms for (a) Normal Operation and (b) Auto-restart.
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TOP221-227
TOPSwitch
Control Voltage Supply
CONTROL pin voltage VC is the supply or bias voltage for the controller and driver circuitry. An external bypass capacitor closely connected between the CONTROL and SOURCE pins is required to supply the gate drive current. The total amount of capacitance connected to this pin (CT) also sets the auto­restart timing as well as control loop compensation. VC is regulated in either of two modes of operation. Hysteretic regulation is used for initial start-up and overload operation. Shunt regulation is used to separate the duty cycle error signal from the control circuit supply current. During start-up, CONTROL pin current is supplied from a high-voltage switched current source connected internally between the DRAIN and CONTROL pins. The current source provides sufficient current to supply the control circuitry as well as charge the total external capacitance (CT).
The first time VC reaches the upper threshold, the high-voltage current source is turned off and the PWM modulator and output transistor are activated, as shown in Figure 5(a). During normal operation (when the output voltage is regulated) feedback control current supplies the VC supply current. The shunt regulator keeps VC at typically 5.7 V by shunting CONTROL pin feedback current exceeding the required DC supply current through the PWM error signal sense resistor RE. The low dynamic impedance of this pin (ZC) sets the gain of the error amplifier when used in a primary feedback configuration. The dynamic impedance of the CONTROL pin together with the external resistance and capacitance determines the control loop compensation of the power system.
Family Functional Description (cont.)
and MOSFET gate drive current.
Oscillator
The internal oscillator linearly charges and discharges the internal capacitance between two voltage levels to create a sawtooth waveform for the pulse width modulator. The oscillator sets the pulse width modulator/current limit latch at the beginning of each cycle. The nominal frequency of 100 kHz was chosen to minimize EMI and maximize efficiency in power supply applications. Trimming of the current reference improves oscillator frequency accuracy.
Pulse Width Modulator
The pulse width modulator implements a voltage-mode control loop by driving the output MOSFET with a duty cycle inversely proportional to the current into the CONTROL pin which generates a voltage error signal across RE. The error signal across RE is filtered by an RC network with a typical corner frequency of 7 kHz to reduce the effect of switching noise. The filtered error signal is compared with the internal oscillator sawtooth waveform to generate the duty cycle waveform. As the control current increases, the duty cycle decreases. A clock signal from the oscillator sets a latch which turns on the output MOSFET. The pulse width modulator resets the latch, turning off the output MOSFET. The maximum duty cycle is set by the symmetry of the internal oscillator. The modulator has a minimum ON-time to keep the current consumption of the TOPSwitch independent of the error signal. Note that a minimum current must be driven into the CONTROL pin before the duty cycle begins to change.
If the CONTROL pin external capacitance (CT) should discharge to the lower threshold, then the output MOSFET is turned off and the control circuit is placed in a low-current standby mode. The high-voltage current source turns on and charges the external capacitance again. Charging current is shown with a negative polarity and discharging current is shown with a positive polarity in Figure 6. The hysteretic auto-restart comparator keeps VC within a window of typically 4.7 to 5.7 V by turning the high-voltage current source on and off as shown in Figure 5(b). The auto-restart circuit has a divide-by-8 counter which prevents the output MOSFET from turning on again until eight discharge-charge cycles have elapsed. The counter effectively limits TOPSwitch power dissipation by reducing the auto-restart duty cycle to typically 5%. Auto­restart continues to cycle until output voltage regulation is again achieved.
Bandgap Reference
All critical TOPSwitch internal voltages are derived from a temperature-compensated bandgap reference. This reference is also used to generate a temperature-compensated current source which is trimmed to accurately set the oscillator frequency
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Gate Driver
The gate driver is designed to turn the output MOSFET on at a controlled rate to minimize common-mode EMI. The gate drive current is trimmed for improved accuracy.
Error Amplifier
The shunt regulator can also perform the function of an error amplifier in primary feedback applications. The shunt regulator voltage is accurately derived from the temperature compensated bandgap reference. The gain of the error amplifier is set by the CONTROL pin dynamic impedance. The CONTROL pin clamps external circuit signals to the VC voltage level. The CONTROL pin current in excess of the supply current is separated by the shunt regulator and flows through RE as a voltage error signal.
Cycle-By-Cycle Current Limit
The cycle by cycle peak drain current limit circuit uses the output MOSFET ON-resistance as a sense resistor. A current limit comparator compares the output MOSFET ON-state drain­source voltage, V current causes V
with a threshold voltage. High drain
DS(ON)
to exceed the threshold voltage and turns
DS(ON)
Page 5
V
IN
DRAIN
V
OUT
I
OUT
TOP221-227
V
IN
0
0
0
12 12 81
8
••• •••
V
C
0
12
I
0
C
1 2
Figure 6. Typical Waveforms for (1) Normal Operation, (2) Auto-restart, and (3) Power Down Reset.
the output MOSFET off until the start of the next clock cycle. The current limit comparator threshold voltage is temperature compensated to minimize variation of the effective peak current limit due to temperature related changes in output MOSFET R
.
DS(ON)
The leading edge blanking circuit inhibits the current limit comparator for a short time after the output MOSFET is turned on. The leading edge blanking time has been set so that current spikes caused by primary-side capacitances and secondary-side rectifier reverse recovery time will not cause premature termination of the switching pulse.
The current limit can be lower for a short period after the leading edge blanking time as shown in Figure 12. This is due to dynamic characteristics of the MOSFET. To avoid triggering the current limit in normal operation, the drain current waveform should stay within the envelope shown.
Shutdown/Auto-restart
To minimize TOPSwitch power dissipation, the shutdown/ auto-restart circuit turns the power supply on and off at an auto­restart duty cycle of typically 5% if an out of regulation condition persists. Loss of regulation interrupts the external current into the CONTROL pin. VC regulation changes from shunt mode to the hysteretic auto-restart mode described above.
812 81
••• •••
When the fault condition is removed, the power supply output becomes regulated, VC regulation returns to shunt mode, and normal operation of the power supply resumes.
Overtemperature Protection
Temperature protection is provided by a precision analog circuit that turns the output MOSFET off when the junction temperature exceeds the thermal shutdown temperature (typically 135 °C). Activating the power-up reset circuit by removing and restoring input power or momentarily pulling the CONTROL pin below the power-up reset threshold resets the latch and allows TOPSwitch to resume normal power supply operation. VC is regulated in hysteretic mode and a 4.7 V to
5.7 V (typical) sawtooth waveform is present on the CONTROL pin when the power supply is latched off.
High-voltage Bias Current Source
This current source biases TOPSwitch from the DRAIN pin and charges the CONTROL pin external capacitance (CT) during start-up or hysteretic operation. Hysteretic operation occurs during auto-restart and overtemperature latched shutdown. The current source is switched on and off with an effective duty cycle of approximately 35%. This duty cycle is determined by the ratio of CONTROL pin charge (IC) and discharge currents (I operation when the output MOSFET is switching.
CD1
and I
). This current source is turned off during normal
CD2
V
C(reset)
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TOP221-227
L1
3.3µH
100 µF
R2
100
+
Wide-Range
DC Input
-
R3
47K
D1
UF4005
D
S
C1
2.2 nF 1KV
U1
TOP221P
CONTROL
T1
TOPSwitch-II
C
D2
UF5401
330 µF
C2
10V
D3
IN4148
C4
100 µF
16V
C5
47 µF
10V
VR1
R1
10
U2
PC817A
Figure 7. Schematic Diagram of a 4W TOPSwitch-II Stand-by Power Supply using an 8 lead PDIP.
Application Examples
+5V
C3
10V
RTN
+
12V Non-Isolated
-
PI-2115-111797
Following are just two of the many possible TOPSwitch implementations. Refer to the Data Book and Design Guide for additional examples.
4W Stand-by Supply using 8 Lead PDIP
Figure 7 shows a 4W stand-by supply. This supply is used in appliances where certain stand-by functions (e.g. real time clock, remote control port) must be kept active even while the main power supply is turned off.
The 5V secondary is used to supply the stand-by function and the 12V non-isolated output is used to supply power for the PWM controller of the main power supply and other primary side functions.
For this application the input rectifiers and input filter are sized for the main supply and are not shown. The input DC rail may
vary from 100V to 380V DC which corresponds to the full universal AC input range. The TOP221 is packaged in a 8 pin power dip package.
The output voltage (5V) is directly sensed by the zener diode (VR1) and the optocoupler (U2). The output voltage is determined by the sum of the zener voltage and the voltage drop across the LED of the optocoupler (the voltage drop across R1 is negligible). The output transistor of the optocoupler drives the CONTROL pin of the TOP221. C5 bypasses the CONTROL pin and provides control loop compensation and sets the auto-restart frequency.
The transformer’s leakage inductance voltage spikes are snubbed by R3 and C1 through diode D1. The bias winding is rectified and filtered by D3 and C4 providing a non-isolated 12V output which is also used to bias the collector of the optocoupler’s output transistor. The isolated 5V output winding is rectified by D2 and filtered by C2, L1 and C3.
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TOP221-227
D2
MUR420
C2
330 µF
35 V
D3
1N4148
C4
0.1 µF
22 mH
C6
0.1 µF
250 VAC
J1
L
N
L2
F1
3.15 A
BR1
400 V
C1 47 µF 400 V
TOP224P
D
S
U1
CONTROL
TOPSwitch-II
C
C5
47 µF
VR1
P6KE200
D1
BYV26C
T1
R3
6.8
Figure 8. Schematic Diagram of a 20W Universal Input TOPSwitch-II Power Supply using an 8 lead PDIP.
20W Universal Supply using 8 Lead PDIP
3.3 µH
U2
PC817A
C7
1 nF
250 VAC
Y1
L1
+12V
C3
220 µF
35 V
RTN
R1
100
R2
220
VR2
1N5241B
11 V
PI-2019-033197
Figure 8 shows a 12V, 20 W secondary regulated flyback power supply using the TOP224P in an eight lead PDIP package and operating from universal 85 to 265 VAC input voltage. This example demonstrates the advantage of the higher power 8 pin leadframe used with the TOPSwitch-II family. This low cost package transfers heat directly to the board through six source pins, eliminating the heatsink and the associated cost. Efficiency is typically 80% at low line input. Output voltage is directly sensed by optocoupler U2 and Zener diode VR2. The output voltage is determined by the Zener diode (VR2) voltage and the voltage drops across the optocoupler (U2) LED and resistor R1. Other output voltages are possible by adjusting the transformer turns ratio and value of Zener diode VR2.
AC power is rectified and filtered by BR1 and C1 to create the high voltage DC bus applied to the primary winding of T1. The other side of the transformer primary is driven by the integrated TOPSwitch-II high-voltage MOSFET. D1 and VR1 clamp
leading-edge voltage spikes caused by transformer leakage inductance. The power secondary winding is rectified and filtered by D2, C2, L1, and C3 to create the 12V output voltage. R2 and VR2 provide a slight pre-load on the 12V output to improve load regulation at light loads. The bias winding is rectified and filtered by D3 and C4 to create a TOPSwitch bias voltage. L2 and Y1-safety capacitor C7 attenuate common mode emission currents caused by high voltage switching waveforms on the DRAIN side of the primary winding and the primary to secondary capacitance. Leakage inductance of L2 with C1 and C6 attenuates differential-mode emission currents caused by the fundamental and harmonics of the trapezoidal or triangular primary current waveform. C5 filters internal MOSFET gate drive charge current spikes on the CONTROL pin, determines the auto-restart frequency, and together with R1 and R3, compensates the control loop.
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TOP221-227
Key Application Considerations
General Guidelines
• Keep the SOURCE pin length very short. Use a Kelvin connection to the SOURCE pin for the CONTROL pin bypass capacitor. Use single point grounding techniques at the SOURCE pin as shown in Figure 9.
• Minimize peak voltage and ringing on the DRAIN voltage at turn-off. Use a Zener or TVS Zener diode to clamp the DRAIN voltage below the breakdown voltage rating of TOPSwitch under all conditions, including start-up and overload. The maximum recommended clamp Zener voltage for the TOP2XX series is 200V and the corresponding maximum reflected output voltage on the primary is 135V. Please see Step 4: AN-16 in the Data Book and Design Guide.
• The transformer should be designed such that the rate of change of drain current due to transformer saturation is within the absolute maximum specification (ID in 100ns before turn off as shown in Figure 13). As a guideline, for most common transformer cores, this can be achieved by maintaining the Peak Flux Density (at maximum I current) below 4200 Gauss (420mT). The transformer spreadsheets Rev. 2.1 (or later) for continuous and Rev.1.0 (or later) for discontinuous conduction mode provide the necessary information.
• Do not plug TOPSwitch into a “hot” IC socket during test. External CONTROL pin capacitance may be charged to excessive voltage and cause TOPSwitch damage.
• While performing TOPSwitch device tests, do not exceed maximum CONTROL pin voltage of 9 V or maximum CONTROL pin current of 100 mA.
• Under some conditions, externally provided bias or supply current driven into the CONTROL pin can hold the TOPSwitch in one of the 8 auto-restart cycles indefinitely and prevent starting. To avoid this problem when doing bench evaluations, it is recommended that the VC power supply be turned on before the DRAIN voltage is applied. TOPSwitch can also be reset by shorting the CONTROL pin to the SOURCE pin momentarily.
• CONTROL pin currents during auto-restart operation are much lower at low input voltages (< 36 V) which increases the auto-restart cycle time (see the IC vs. DRAIN Voltage Characteristic curve).
limit
• Short interruptions of AC power may cause TOPSwitch to enter the 8-count auto-restart cycle before starting again. This is because the input energy storage capacitors are not completely discharged and the CONTROL pin capacitance has not discharged below the internal power-up reset voltage.
• In some cases, minimum loading may be necessary to keep a lightly loaded or unloaded output voltage within the desired range due to the minimum ON-time.
Replacing
TOPSwitch
with
TOPSwitch-II
There is no external latching shutdown function in TOPSwitch­II. Otherwise, the functionality of the TOPSwitch-II devices is
same as that of the TOPSwitch family. However, before considering TOPSwitch-II as a 'drop in' replacement in an existing TOPSwitch design, the design should be verified as described below.
The new TOPSwitch-II family offers more power capability than the original TOPSwitch family for the same MOSFET R
. Therefore, the original TOPSwitch design must be
DS(ON)
reviewed to make sure that the selected TOPSwitch-II replacement device and other primary components are not over stressed under abnormal conditions.
The following verification steps are recommended:
• Check the transformer design to make sure that it meets the ID specification as outlined in the General Guidelines section above.
• Thermal: Higher power capability of the TOPSwitch-II would in many instances allow use of a smaller MOSFET device (higher R
) for reduced cost. This may affect
DS(ON)
TOPSwitch power dissipation and power supply efficiency. Therefore thermal performance of the power supply must be verified with the selected TOPSwitch-II device.
• Clamp Voltage: Reflected and Clamp voltages should be verified not to exceed recommended maximums for the TOP2XX Series: 135V Reflected/200V Clamp. Please see Step 4: AN-16 in the Data Book and Design Guide and readme.txt file attached to the transformer design spreadsheets.
• Agency Approval: Migrating to TOPSwitch-II may require agency re-approval.
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TO-220 PACKAGE
TOP221-227
Bias/Feedback
Return
Bias/Feedback
Input
S
C
C5
and/or compensation
TOP VIEW
High Voltage
Return
D
Kelvin-connected
auto-restart/bypass
capacitor C5
network
DIP-8/SMD-8 PACKAGE
Bias/Feedback
Return
SOURCE
C5
Kelvin-connected
auto-restart/bypass capacitor C5
and/or compensation network
PC Board
Bias/Feedback Input
Bias/Feedback Return
C5
SOURCE
High Voltage
CONTROL
Return
SOURCE
DRAIN
Do not bend SOURCE pin. Keep it short.
Bend DRAIN pin forward if needed for creepage.
High-voltage Return
CONTROL
Bias/Feedback
Input
auto-restart/bypass capacitor C5
and/or compensation network
TOP VIEW
Figure 9. Recommended TOPSwitch Layout.
Design T ools
The following tools available from Power Integrations greatly simplify TOPSwitch based power supply design.
• Data Book and Design Guide includes extensive application information
• Excel Spreadsheets for Transformer Design - Use of this
tool is strongly recommended for all TOPSwitch designs.
• Reference design boards – Production viable designs that are assembled and tested.
Kelvin-connected
DRAIN
PI-2021-041798
All data sheets, application literature and up-to-date versions of the Transformer Design Spreadsheets can be down loaded from our web site at www.powerint.com. A diskette of the Transformer Design Spreadsheets may also be obtained by sending in the completed form provided at the end of this data sheet.
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TOP221-227
ABSOLUTE MAXIMUM RATINGS
DRAIN Voltage ............................................ -0.3 to 700 V
DRAIN Current Increase (ID) in 100 ns except during
blanking time ......................................... 0.1 x I
LIMIT(MAX)
CONTROL Voltage ..................................... - 0.3 V to 9 V
CONTROL Current ...............................................100 mA
Storage Temperature ..................................... -65 to 125 °C
Notes:
1. All voltages referenced to SOURCE, TA = 25 °C.
2. Related to transformer saturation – see Figure 13.
3. Normally limited by internal circuitry.
4. 1/16" from case for 5 seconds.
Conditions
Parameter
Symbol
(Unless Otherwise Specified)
See Figure 14
SOURCE = 0 V; Tj = -40 to 125 °C
CONTROL FUNCTIONS
Output Frequency
f
OSC
IC = 4 mA, Tj = 25 ˚C
1
Operating Junction Temperature Lead Temperature
(2)
Thermal Impedance: Y Package (θJA)
(4)
................................................ 260 °C
(θJC)
(3)
................-40 to 150 °C
(5)
.................70 °C/W
(6)
...................2 °C/W
P/G Package:
(θJA) .........45 °C/W
(θJC)
(6)
...............................5 °C/W
(7)
; 35 °C/W
5. Free standing with no heatsink.
6. Measured at tab closest to plastic interface or source pin.
7. Soldered to 0.36 sq. inch (232 mm2), 2 oz. (610 gm/m2) copper clad.
8. Soldered to 1 sq. inch (645 mm2), 2 oz. (610 gm/m2) copper clad.
Min Typ Max
90 100 110
(8)
Units
kHz
Maximum Duty Cycle
Minimum Duty Cycle
D
MAX
D
MIN
PWM Gain
PWM Gain Temperature Drift
External Bias Current
Dynamic Impedance
Dynamic Impedance
I
B
Z
C
Temperature Drift
SHUTDOWN/AUTO-RESTART
CONTROL Pin Charging Current
I
C
IC = I
+ 0.4 mA, See Figure 10
CD1
IC = 10 mA, See Figure 10
IC = 4 mA, Tj = 25 ˚C
See Figure 4
See Note A
See Figure 4
IC = 4 mA, Tj = 25 ˚C
See Figure 11
VC = 0 V
Tj = 25 ˚C
VC = 5 V
64 67 70
0.7 1.7 2.7
-21 -16 -11
-0.05
0.8 2.0 3.3
10 15 22
0.18
-2.4 -1.9 -1.2
-2 -1.5 -0.8
%
%
%/mA
%/mA/˚C
mA
%/˚C
mA
Charging Current Temperature Drift
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See Note A
0.4
%/˚C
Page 11
Conditions
TOP221-227
Parameter
Symbol
(Unless Otherwise Specified)
SOURCE = 0 V; Tj = -40 to 125°C
SHUTDOWN/AUTO-RESTART (cont.)
Auto-restart Threshold Voltage
V
C(AR)
UV Lockout Threshold Voltage
Auto-restart Hysteresis Voltage
Auto-restart Duty Cycle
S1 open
Auto-restart Frequency
CIRCUIT PROTECTION
di/dt = 40 mA/µs, TOP221Y
Tj = 25°C TOP221P
di/dt = 80 mA/µs, TOP222Y
Tj = 25°C TOP222P
See Figure 14
S1 open
S1 open
S1 open
TOP221-222 TOP223-227
S1 open
Min Typ Max
5.7
4.4 4.7 5.0
0.6 1.0
259 258
1.2
0.23 0.25 0.28
0.45 0.50 0.55
Units
V
V
V
%
Hz
Self-protection Current Limit
Initial Current Limit
Leading Edge Blanking Time
I
LIMIT
I
t
INIT
LEB
di/dt = 160 mA/µs, TOP223Y
Tj = 25°C TOP223P
di/dt = 240 mA/µs, TOP224Y
Tj = 25°C TOP224P
di/dt = 320 mA/µs, TOP225Y
Tj = 25°C
di/dt = 400 mA/µs, TOP226Y
Tj = 25°C
di/dt = 480 mA/µs, TOP227Y
Tj = 25°C
85 VAC
See Figure 12 Tj = 25˚C
(Rectified Line Input)
265 VAC
(Rectified Line Input)
IC = 4 mA,
Tj = 25˚C
0.90 1.00 1.10
1.35 1.50 1.65
1.80 2.00 2.20
2.25 2.50 2.75
2.70 3.00 3.30
0.75 x
I
LIMIT(MIN)
0.6 x
I
LIMIT(MIN)
180
A
A
ns
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TOP221-227
Parameter
CIRCUIT PROTECTION (cont.)
Symbol
SOURCE = 0 V; Tj = -40 to 125 °C
Conditions
(Unless Otherwise Specified)
See Figure 14
Min Typ Max
Units
Current Limit Delay
Thermal Shutdown Temperature
Power-up Reset Threshold Voltage
OUTPUT
ON-State Resistance
t
V
C(RESET)
R
DS(ON)
ILD
IC = 4 mA
IC = 4 mA
S2 open
TOP221 Tj = 25 °C
ID = 25 mA Tj = 100 °C
TOP222 Tj = 25 °C
ID = 50 mA Tj = 100 °C
TOP223 Tj = 25 °C
ID = 100 mA Tj = 100 °C
TOP224 Tj = 25 °C
ID = 150 mA Tj = 100 °C
TOP225 Tj = 25 °C
ID = 200 mA Tj = 100 °C
TOP226 Tj = 25 °C
ID = 250 mA Tj = 100 °C
TOP227 Tj = 25 °C
ID = 300 mA Tj = 100 °C
100
125 135
2.0 3.3 4.3
31.2 36.0
51.4 60.0
15.6 18.0
25.7 30.0
7.8 9.0
12.9 15.0
5.2 6.0
8.6 10.0
3.9 4.5
6.4 7.5
3.1 3.6
5.2 6.0
2.6 3.0
4.3 5.0
ns
°C
V
OFF-State Current
Breakdown Voltage
Rise Time
Fall Time
C
12
12/97
I
BV
DSS
t
t
See Note B VDS = 560 V, TA = 125 °C
See Note B
DSS
ID = 100 µA, TA = 25 °C
r
Measured in a Typical Flyback Converter Application.
f
700
100
50
250
µA
V
ns
ns
Page 13
Parameter
OUTPUT (cont.)
Symbol
Conditions
(Unless Otherwise Specified)
See Figure 14
SOURCE = 0 V; Tj = -40 to 125 °C
TOP221-227
Min Typ Max
Units
DRAIN Supply Voltage
Shunt Regulator Voltage
Shunt Regulator Temperature Drift
CONTROL Supply/
V
C(SHUNT)
I
CD1
See Note C
IC = 4 mA
Output TOP221-224 MOSFET Enabled TOP225-227
36
5.5 5.7 6.0
±50
0.6 1.2 1.6
0.7 1.4 1.8
V
V
ppm/˚C
mA
Discharge Current
I
CD2
NOTES:
A. For specifications with negative values, a negative temperature coefficient corresponds to an increase in
magnitude with increasing temperature, and a positive temperature coefficient corresponds to a decrease in magnitude with increasing temperature.
B. The breakdown voltage and leakage current measurements can be accomplished as shown in Figure 15 by using
the following sequence: i. The curve tracer should initially be set at 0 V. The base output should be adjusted through a voltage sequence
of 0 V, 6.5 V, 4.3 V, and 6.5 V, as shown. The base current from the curve tracer should not exceed 100 mA. This CONTROL pin sequence interrupts the Auto-restart sequence and locks the OFF State. ii. The breakdown and the leakage measurements can now be taken with the curve tracer. The maximum voltage from the curve tracer must be limited to 700 V under all conditions.
Output MOSFET Disabled
0.5 0.8 1.1
TOPSwitch
internal MOSFET in the
C.It is possible to start up and operate
charging current is reduced, which affects start-up time, auto-restart frequency, and auto-restart duty cycle. Refer to the characteristic graph on CONTROL pin charge current (IC) vs. DRAIN voltage for low voltage operation characteristics.
TOPSwitch
at DRAIN voltages well below 36 V. However, the CONTROL pin
C
12/97
13
Page 14
TOP221-227
120
100
80
40
20
60
0
0246810
CONTROL Pin Voltage (V)
CONTROL Pin Current (mA)
PI-1939-091996
1
Slope
Dynamic
Impedance
=
HV
90%
t
2
t
1
90%
DRAIN
VOLTAGE
10%
0 V
Figure 10. TOPSwitch Duty Cycle Measurement.
t
(Blanking Time)
1.3
1.2
1.1 1
0.9
0.8
0.8
0.7
0.6
0.5
0.4
0.3
0.2
DRAIN Current (normalized)
0.1 0
LEB
I
INIT(MIN)
I
INIT(MIN)
I
LIMIT(MAX)
I
LIMIT(MIN)
012 6 83
Time (us)
@ 85VAC
@ 265VAC
@ 25 ˚C
@ 25 ˚C
45 7
D =
t
1
t
2
PI-2039-043097
PI-2022-040397
Figure 11. TOPSwitch CONTROL Pin I-V Characteristic.
100 nS
t
LEB
I
D
DRAIN
CURRENT
0 A
PI-2031-042397
Figure 12. Self-protection Current Limit Envelope.
14
C 12/97
Figure 13. Example of ∆ID on Drain Current Waveform with
Saturated Transformer.
Page 15
TOP221-227
D
CONTROL
TOPSwitch
S
NOTES: 1. This test circuit is not applicable for current limit or output characteristic measurements.
2. For P package, short all SOURCE and SOURCE (HV RTN) pins together.
Figure 14. TOPSwitch General Test Circuit.
470
5 W
C
S1
0.1 µF
47 µF 0-50 V
S2
470
40 V
PI-1964-110696
Curve
Tracer
BCE
D
TOPSwitch
CONTROL
S
C
6.5V
4.3V
NOTE: This CONTROL pin sequence interrupts the Auto-restart sequence and locks the
Figure 15. Breakdown Voltage and Leakage Current Measurement Test Circuit.
TOPSwitch
internal MOSFET in the OFF State.
PI-2109-092397
12/97
C
15
Page 16
TOP221-227
BENCH TEST PRECAUTIONS FOR EVALUATION OF ELECTRICAL CHARACTERISTICS
The following precautions should be followed when testing TOPSwitch by itself outside of a power supply. The schematic shown in Figure 14 is suggested for laboratory testing of TOPSwitch.
When the DRAIN supply is turned on, the part will be in the Auto-restart mode. The CONTROL pin voltage will be oscillating at a low frequency from 4.7 to 5.7 V and the DRAIN is turned on every eighth cycle of the CONTROL pin oscillation. If the CONTROL pin power supply is turned on while in this
Typical Performance Characteristics
BREAKDOWN vs. TEMPERATURE
1.1
PI-176B-051391
1.0
(Normalized to 25°C)
Breakdown Voltage (V)
Auto-restart mode, there is only a 12.5% chance that the control pin oscillation will be in the correct state (DRAIN active state) so that the continuous DRAIN voltage waveform may be observed. It is recommended that the VC power supply be turned on first and the DRAIN power supply second if continuous drain voltage waveforms are to be observed. The 12.5% chance of being in the correct state is due to the 8:1 counter. Temporarily shorting the CONTROL pin to the SOURCE pin will reset TOPSwitch, which then will come up in the correct state.
FREQUENCY vs. TEMPERATURE
1.2
1.0
0.8
0.6
0.4
Output Frequency
(Normalized to 25°C)
0.2
PI-1123A-060794
0.9
-50 -25 0 25 50 75 100 125 150
Junction Temperature (°C)
CURRENT LIMIT vs. TEMPERATURE
1.2
1.0
0.8
0.6
0.4
Current Limit
(Normalized to 25°C)
0.2
0
-50 -25 0 25 50 75 100 125 150
Junction Temperature (°C)
PI-1125-041494
0
-50 -25 0 25 50 75 100 125 150
Junction Temperature (°C)
IC vs. DRAIN VOLTAGE
2
VC = 5 V
1.6
1.2
0.8
CONTROL Pin
0.4
Charging Current (mA)
0
0 20406080100
DRAIN Voltage (V)
PI-1145-103194
16
C 12/97
Page 17
Typical Performance Characteristics (cont.)
TOP221-227
OUTPUT CHARACTERISTICS
3
TCASE=25˚C TCASE=100˚C
2
Scaling Factors:
1
DRAIN Current (A)
TOP227 1.00 TOP226 0.83 TOP225 0.67 TOP224 0.50 TOP223 0.33 TOP222 0.17 TOP221 0.09
0
02 4 6 810
DRAIN Voltage (V)
DRAIN CAPACITANCE POWER
500
400
300
PI-1940-0900396
Scaling Factors:
TOP227 1.00 TOP226 0.83 TOP225 0.67 TOP224 0.50 TOP223 0.33 TOP222 0.17 TOP221 0.09
C
vs. DRAIN VOLTAGE
OSS
1000
Scaling Factors:
TOP227 1.00 TOP226 0.83 TOP225 0.67 TOP224 0.50 TOP223 0.33 TOP222 0.17
100
TOP221 0.09
DRAIN Capacitance (pF)
10
0 400200 600
DRAIN Voltage (V)
PI-1942-090396
PI-1941-090396
200
Power (mW)
100
0
0 200 400 600
DRAIN Voltage (V)
12/97
C
17
Page 18
TOP221-227
Free
To receive your free copy of the latest version of the spreadsheets on a 3 1/2" IBM compatible floppy (Excel 4.0 format), please visit our Website at www.powerint.com or fill out this form completely and mail/fax it to us at the address/phone number noted below.
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Address:________________________________________________________________________________________________
City:________________________________________ State: ________________________ Zip/Postal Code:__________________
Country:_________________________________________________________________________________________________
Phone:_______________________________________________ Fax:_______________________________________________
E-mail:__________________________________________________________________________________________________
TOPSwitch
Flyback Transformer Design Spreadsheets
End Application:____________________________________________________________________________________________
Power Requirement:_________________________________________________________________________________________
Input Voltage:____________________________________________________________________________________________
Estimated Design Completion Date:___________________________________________________________________________
Power supply that I am designing is
the end product of my companyis incorporated as part of an end product. If so, please specify the end product_____________________________________
To qualify for this free offer, this form must be filled out completely.
Fax or mail this request to:
Free Flyback Transformer Design Spreadsheet Program Offer
Power Integrations, Inc. 477 N. Mathilda Avenue Sunnyvale, CA 94086 Attn: Customer Service
Fax: 408-523-9365
18
C 12/97
Page 19
TOP221-227
P08A Plastic DIP-8
DIM
J1
J2
Notes:
1. Package dimensions conform to JEDEC specification MS-001-AB for standard dual in-line (DIP) package .300 inch row spacing (PLASTIC) 8 leads (issue B, 7/85)..
2. Controlling dimensions are inches.
3. Dimensions shown do not include mold flash or other protrusions. Mold flash or protrusions shall not exceed .006 (.15) on any side.
4. D, E and F are reference datums on the molded body.
A B C G H
K
L M N P Q
inches
0.370-0.385
0.245-0.255
0.125-0.135
0.015-0.040
0.120-0.135
0.060 (NOM)
0.014-0.022
0.010-0.012
0.090-0.110
0.030 (MIN)
0.300-0.320
0.300-0.390
0.300 BSC
mm
9.40-9.78
6.22-6.48
3.18-3.43
0.38-1.02
3.05-3.43
1.52 (NOM)
0.36-0.56
0.25-0.30
2.29-2.79
0.76 (MIN)
7.62-8.13
7.62-9.91
7.62 BSC
D S .004 (.10)
85
-E-
B
1
A
M
4
-D-
J1
C
N
-F-
G
L
H
J2
K
Q P
PI-2076-031197
G08A Plastic SMD-8
DIM
G
J1 J2 J3 J4
M
Notes:
1. Package dimensions conform to JEDEC specification MS-001-AB (issue B, 7/85) except for lead shape and size.
2. Controlling dimensions are inches.
3. Dimensions shown do not include mold flash or other protrusions. Mold flash or protrusions shall not exceed .006 (.15) on any side.
4. D, E and F are reference datums on the molded body.
A
0.370-0.385
B
0.245-0.255
C
0.125-0.135
0.004-0.012
H
0.036-0.044
0.060 (NOM)
0.048-0.053
0.032-0.037
0.007-0.011
K
0.010-0.012
L
0.030 (MIN)
P
0.372-0.388
α
inches
0.100 BSC
0-8˚
mm
9.40-9.78
6.22-6.48
3.18-3.43
0.10-0.30
0.91-1.12
1.52 (NOM)
1.22-1.35
0.81-0.94
0.18-0.28
0.25-0.30
2.54 BSC
0.76 (MIN)
9.45-9.86 0-8˚
-E-
B
J3
D S .004 (.10)
85
E S .010 (.25)
P
1
L
A
M
4
-D-
J1
C
-F-
J4
.010 (.25) M A S
J2
K
.004 (.10)
α
G
H
PI-2077-071597
12/97
C
19
Page 20
TOP221-227
Y03A Plastic TO-220/3
DIM
A B C D E
F G H
J K
L M N O
P
inches
.460-.480 .400-.415 .236-.260
.240 - REF.
.520-.560 .028-.038 .045-.055 .090-.110 .165-.185 .045-.055 .095-.115 .015-.020 .705-.715 .146-.156 .103-.113
mm
11.68-12.19
10.16-10.54
5.99-6.60
6.10 - REF.
13.21-14.22 .71-.97
1.14-1.40
2.29-2.79
4.19-4.70
1.14-1.40
2.41-2.92 .38-.51
17.91-18.16
3.71-3.96
2.62-2.87
B
K
P
J
C
O
A
N
L
D
E
F
M
Notes:
1. Package dimensions conform to JEDEC specification TO-220 AB for standard flange mounted, peripheral lead package; .100 inch lead spacing (Plastic) 3 leads (issue J, March 1987)
2. Controlling dimensions are inches.
3. Pin numbers start with Pin 1, and continue from left to right when viewed from the top.
4. Dimensions shown do not include mold flash or other protrusions. Mold flash or protrusions shall not exceed .006 (.15 mm) on any side.
5. Position of terminals to be measured at a position .25 (6.35 mm) from the body.
6. All terminals are solder plated.
G
H
PI-1848-050696
Power Integrations reserves the right to make changes to its products at any time to improve reliability or manufacturability. Power Integrations does not assume any liability arising from the use of any device or circuit described herein, nor does it convey any license under its patent rights or the rights of others.
PI Logo and
TOPSwitch
are registered trademarks of Power Integrations, Inc.
©Copyright 1998, Power Integrations, Inc. 477 N. Mathilda Avenue, Sunnyvale, CA 94086 http://www.powerint.com
WORLD HEADQUARTERS NORTH AMERICA - WEST
Power Integrations, Inc. 477 N. Mathilda Avenue Sunnyvale, CA 94086 USA Main: +1•408•523•9200 Customer Service: Phone: +1•408•523•9265 Fax: +1•408•523•9365
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Power Integrations International Holdings, Inc. Rm# 402, Handuk Building, 649-4 Yeoksam-Dong, Kangnam-Gu, Seoul, Korea Phone: +82•2•568•7520 Fax: +82•2•568•7474
C
20
12/97
NORTH AMERICA - EAST & SOUTH AMERICA
Power Integrations, Inc. Eastern Area Sales Office 1343 Canton Road, Suite C1 Marietta, GA 30066 USA Phone: +1•770•424•5152 Fax: +1•770•424•6567
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Power Integrations, K.K. Keihin-Tatemono 1st Bldg. 12-20 Shin-Yokohama 2-Chome, Kohoku-ku, Yokohama-shi, Kanagawa 222, Japan Phone: +81•(0)•45•471•1021 Fax: +81•(0)•45•471•3717
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