Datasheet TOIM3232, TFDU4100, TFDS4500 Datasheet (Telefunken)

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TFDU4100/TFDS4500/TFDT4500

Semiconductor

2.7–5.5V Serial Infrared Transceiver Module Family
(SIR, 115.2 kbit/s)

Features Applications

 Compliant to IrDA 1.2 (up to

115.2 kbit/s)

 Wide Operating Voltage Range

(2.7 to 5.5 V )

 Low Power Consumption

(1.3 mA Supply Current)

 Power Sleep Mode Through

/SD Pin (5 nA Sleep

V

CC1

Current)

 Long Range (up to 3.0 m at 115.2

kbit/s)

 Three Surface Mount Package

Options

– Universal (9.7 x 4.7 x 4.0 mm)
– Side View (13.0 x 5.95 x 5.3 mm)
– T op View (13.0 x 7.6 x 5.95 mm)

 BabyFace (Universal) Package

Capable of Surface Mount
Solderability to Side- and
T op-View Orientation

 Directly Interfaces with Various

Super I/O and Controller Devices
and TEMIC’s TOIM3000 and
TOIM3232 I/Os

 Few External Components

Required

 Backward Compatible to All

TEMIC SIR Infrared
Transceivers

 Built–in EMI Protection – No

External Shielding Necessary

Description

The TFDU4100, TFDS4500, and TFDT4500 are a family
of low-power infrared transceiver modules compliant to
the IrDA 1.2 standard for serial infrared (SIR) data
communication, supporting IrDA speeds up to 115.2
kbit/s. Integrated within the transceiver modules are a
photo PIN diode, infrared emitter (IRED), and a
low-power analog control IC to provide a total front–end
solution in a single package. TEMIC’s SIR transceivers
are available in three package options, including our
BabyFace package (TFDU4100), the smallest SIR
transceiver available on the market. This wide selection

 Notebook Computers, Desktop

PCs, Palmtop Computers (Win
CE, Palm PC), PDAs

 Digital Still and Video Cameras
 Printers, Fax Machines,

Photocopiers, Screen Projectors

 T elecommunication Products

(Cellular Phones, Pagers)

 Internet TV Boxes, Video

conferencing systems

 External Infrared Adapters

(Dongles)

 Medical and Industrial Data

Collection Devices

provides flexibility for a variety of applications and space
constraints.

The transceivers are capable of directly interfacing with
a wide variety of I/O chips which perform the pulse-width
modulation/demodulation function, including TEMIC’s
TOIM3000 and TOIM3232. At a minimum, a
current-limiting resistor in series with the infrared emitter
and a Vcc bypass capacitor are the only external
components required to implement a complete solution.

Package Options

TFDU4100

Baby Face (Universal)

This product is currently in devleopment. Inquiries regarding the status of this product should be directed to TEMIC Marketing.

Pending—Rev. A, 03-Apr-98 1

TFDS4500

Side View

TFDT4500

Top View

Pre-Release Information

TFDU4100/TFDS4500/TFDT4500

Functional Block Diagram

V

/SD

CC1

Driver

Amplifier Comparator

AGC

SC

Logic

Rxd

IRED Anode

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Semiconductor

V

CC2

R

S

Txd

Open Collector Driver

GND

IRED Cathode

Pin Assignment and Description

Pin Number

“ U ”, “ T ”

Option

1 8 IRED Anode IRED anode, should be externally connected to V

2 1 IRED Cathode IRED cathode, internally connected to driver transistor
3 7 Txd Transmit Data Input I HIGH
4 2 Rxd Received Data Output, push–pull CMOS driver output capable of driving a

5 6 NC Do not connect
6 3 V
7 5 SC Sensitivity control I HIGH
8 4 GND Ground

“ S ”

Option

Function Description I/O Active

through a current

control resistor

standard CMOS or TTL load. No external pull–up or pull–down resistor is
required (20 kΩ resistor internal to device). Pin is inactive during
transmission.

/ SD Supply Voltage/Shutdown (see “Shutdown” on page 6)

CC1

CC2

O LOW

5678

IRED Detector

12345678

”U” Option

BabyFace (Universal)

123 4

IRED Detector

”S” Option

Side View

IRED Detector

1 2345678

”T” Option

Top View

2 Pending—Rev . A, 03-Apr-98

Pre-Release Information

TELEFUNKEN

V

A

°C

A

TFDU4100/TFDS4500/TFDT4500

Semiconductor

Ordering Information

Part Number Qty/ Reel Description

TFDU4100–TR3 1000 pcs Oriented in carrier tape for side view surface mounting
TFDU4100–TT3 1000 pcs Oriented in carrier tape for top view surface mounting

TFDS4500–TR3 750 pcs

TFDT4500–TR3 750 pcs

Absolute Maximum Ratings

Parameter Symbol Test Conditions

Supply Voltage Range V
Voltage Range of IRED Drive Output V
Input Currents
Output Sink Current 25
Power Dissipation
Junction Temperature T
Ambient Temperature Range (Operating) T
Storage Temperature Range T
Soldering Temperature t = 20 s 215 240
Average IRED Current I
Repetitive Pulsed IRED Current I
IRED Anode Voltage at Current Output V
Transmitter Data Input Voltage V
Receiver Data Output Voltage V
Virtual Source Size
Maximum Intensity for Class 1 Operation of

IEC 825 or EN60825

Notes
a. Reference point GND pin unless otherwise noted.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. All pins except IRED cathode pin and IRED anode pin.
e. See Derating Curve
f. Method: (1-1/e) encircled energy.
g. Worst case IrDA SIR pulse pattern.

d

e

f

g

CC1
CC2

P

D

J

amb

stg

(DC) 100

IRED

(RP) t < 90µs, ton<20% 500

IRED

IREDA

Txd

Rxd

d 2.5 2.8 mm

IRED anode pin, Txd LOW – 0.5 6

EN60825, 1997 400 mW/sr

a

b

Min

– 0.5 6

–25 85
–25 85

– 0.5 6
– 0.5 V
– 0.5 V

Typ

c

Max

200 mW
125

cc
cc

10

+ 0.5
+ 0.5

b

Unit

m

°

m

V

Pending—Rev. A, 03-Apr-98 3

Pre-Release Information

TFDU4100/TFDS4500/TFDT4500

V

pp y ,

CC1

I

A

pp y ,

CC1

(g)

I

M

d

kW/

2

Rxd Output Volt

Electrical Characteristics

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Parameter Symbol Test Conditions

a

Min

b

TypcMax

b

Unit

Transceiver

Supply Voltage V
Supply Voltage V

Supply Current, V
(Receive Mode)

Supply Current, V
(Transmit Mode)

CC1

CC1
d

Pin

Pin (avg)

Leakage Current of IR Emitter, IRED
Anode Pin

Transceiver Power On Settling Time I

CC1
CC1

S

S

I

S

S

V

CC1

Receive Mode 2.7 5.5

Transmit Mode, R2 = 51 Ω 2.0 5.5

V

= 5.5V 1.3 2.5

CC1

V

= 2.7V 1.0 1.5

CC1

V

= 5.5V 5.0 5.5

CC1

V

= 2.7V 3.5 4.5

CC1

= OFF, Txd = LOW , V

T = 25°– 85° C

CC2

= 6V,

0.005 0.5 µA
50 µs

m

Optoelectronic Characteristics

Parameter Symbol Test Conditions

a

Receiver

E

Min Detection Threshold Irradiance

Min Detection Threshold Irradiance

ax Detection Threshold Irradiance

e

d

d

Logic Low Receiver Input Irradiance E

age

emin

E

emin

E

emax

emax (low)

V

OL

V

OH

Output Current VOL < 0.8V 4 mA
Rise Time t
Fall Time t
Rxd Pulse Width of Output Signal P

f

Jitter
Latency t

r
f
w

t

j

L

Notes
a. T
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.

= 25_C, VCC = 2.7 – 5.5 V unless otherwise noted.

amb

c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. I
e. BER = 10

(peak) = 210 mA (At IRED Anode pin)

IRED

–8

(IrDA specification).

f. Leading edge of output signal.

α = ±15_, SIR Mode, SC = LOW 20 35
α = ±15_, SIR Mode, SC = LOW,

V

= 2.7V

CC1

α = ±15_, SIR Mode, SC = HIGH 6 10 15
α = ± 90_, SIR Mode, V
α = ± 90_, SIR Mode, V

= 5V 3.3 5

CC1

= 3V 8 15

CC1

SC = HIGH or LOW 4 mW/m

Active, C = 15 pF, R = 2.2 kΩ 0.5 0.8 V

Non–active, C = 15 pF, R = 2.2 kΩ VCC–0.5

C = 15 pF, R = 2.2 kΩ 20 1400
C = 15 pF, R = 2.2 kΩ 20 200

115.2 kbit/s mode 1.41 8

Over a period of 10 bit, 115.2 kbit/s 2

Min

b

TypcMax

100 500 µs

b

Unit

35

mW/m

2

2

m

2

ns

µs

4 Pending—Rev . A, 03-Apr-98

Pre-Release Information

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V

TFDU4100/TFDS4500/TFDT4500

Semiconductor

Optoelectronic Characteristics (Cont’d)

Parameter Symbol Test Conditions

a

Min

b

Typ

c

Max

b

Unit

Transmitter

IRED Operating Current

Logic Low Transmitter Input Voltage VIL (Txd) 0 0.8
Logic High Transmitter Input Voltage VIH (Txd) 2.4 V

Output Radiant Intensity

Output Radiant Intensity I
Angle of Half Intensity α ±24 _
Peak Wavelength of Emission λ
Halfwidth of Emission Spectrum 60

Optical Rise Time, Fall Time tR, t

Optical Overshoot 25 %

Rising Edge Peak–to–Peak Jitter t

Notes

= 25_C, VCC = 2.7 – 5.5 V unless otherwise noted.

a. T

amb

b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. IRED Operating Current can be adjusted by variation of R
e. In agreement with IEC 825 eye safety limit

d

e

I

D

I

eH

eL

P

j

Current limiting resistor is series to
IRED: R

F

Over a period of 10 bits, independent

= 8.2 Ω, V

1

Current limiting resistor in series to

IRED: R

= 8.2Ω @ V

1

±15_

Logic Low Level 0.04 mW/sr

115.2 kHz square wave signal, duty

1

cycle 1:1

of information content

CC2

= 5V

= 5V, α =

CC2

0.3 0.4 A

+0.5

CC1

45 140 200 mW/sr

880 900

200 600 ns

0.2 µs

nm

Recommended Circuit Diagram

The only required components for designing an IrDA 1.2
compatible design using TEMIC SIR transceivers are a
current limiting resistor to the IRED. However,
depending on the entire system design and board layout,
additional components may be required (see Figure 1).

It is recommended that the capacitors C1 and C2 are
positioned as near as possible to the transceiver power
supply pins, as in the proposed layout in Figure 1. A
tantalum capacitor should be used for C1, while a ceramic
capacitor should be used for C2 to suppress RF noise.
Also, when connecting the described circuit to the power
supply , low impedance wiring should be used.

R1 is used for controlling the current through the IR
emitter. For increasing the output power of the IRED, the
value of the resistor should be reduced. Similarly, to
reduce the output power of the IRED, the value of the
resistor should be increased. For typical values of R1 see
Fig 2. For IrDA compliant operation, a current control
resistor of 8–12 Ω is recommended. The upper drive
current limitation is dependent on the duty cycle and is

given by the absolute maximum ratings on the data sheet
and the eye safety limitations given by IEC825–1.

V

CC2

V

SD

CC1/

R2

Rxd

Txd

GND

SC

Note: Outlined components are optional depending on quality of
power supply.

C1 C2

TFDx4x00

IRED
Cathode

Rxd
V

CC1/

GND

IRED

Anode

Txd

SD

R1

SC

NC

Figure 1. Recommended Application Circuit

R2, C1 and C2 are optional and dependent on the quality
of the supply voltage V

and injected noise. An

CC1

Pending—Rev. A, 03-Apr-98 5

Pre-Release Information

TFDU4100/TFDS4500/TFDT4500

TELEFUNKEN

Semiconductor

unstable power supply with dropping voltage during
transmission may reduce sensitivity (and transmission
range) of the transceiver.

Table 1. Recommended Application Circuit Components

Component Recommended Value

C1 100 nF, Ceramic (use 470 nF for less stable power

C2 1 µF, Tantalum
R1 8.2 Ω, 0.25 W (recommend using two 0.125 W

R2 22 – 47 Ω, 0.125 W

supplies)

resistors in parallel)

The sensitivity control (SC) pin allows the minimum
detection irradiance threshold of the transceiver to be
lowered when set to a logic HIGH. Lowering the
irradiance threshold increases the sensitivity to infrared
signals and increases transmission range up to 3 meters.
However, setting the SC pin to logic HIGH also makes
the transceiver more susceptible to transmission errors
due to an increased sensitivity to fluorescent light
distrubances. It is recommended to set the SC pin to logic
LOW or left open if the increased range is not required or
if the system will be operating in bright ambient light.

The guide pins on the side-view and top-view packages
are internally connected to ground but should not be
connected to the system ground to avoid ground loops.
They should be used for mechanical purposes only and
should be left floating.

300

250

200

(mW/sr)

e

150

100

Intensity I

5.25 V, Min. Efficiency ,
Min. VF, Min. R

4.75 V, Min. Efficiency,
Min. VF, Max. R

DSon

DSon

Shutdown

The internal switch for the IRED in TEMIC SIR
transceivers is designed to be operated like an open
collector driver. Thus, the V
unregulated power supply while only a well regulated
power source with a supply current of 1.3 mA connected
to V

/SD is needed to provide power to the remainder

CC1

of the transceiver circuitry in receive mode. In transmit
mode, this current is slightly higher (approxiamately 4
mA average at 3V supply current) and the voltage is not
required to be kept as stable as in receive mode. A voltage
drop of V

is acceptable down to about 2.2V when

CC1

buffering the voltage directly from the V
by a 470 nF ceramic capacitor (C1) and a 51 Ω serial
resistor (R2) is used (see figure 1).

This configuration minimizes the influence of high
current surges from the IRED on the internal analog
control circuitry of the transceiver and the application
circuit. Also, board space and cost savings can be
achieved by eliminating the additional linear regulator
normally needed for the IRED’s high current
requirements.

The transceiver can be very efficiently shutdown by
keeping the IRED connected to the power supply V
but switching off V
V

/SD can be provided directly from a microcontroller

CC1

/SD. The power source to

CC1

(see Figure 3). In shutdown, current loss is realized only
as leakage current through the current limiting resistor to
the IRED (typically, 5 nA). The settling time after
switching V

/SD on again is approxiamately 50 µs.

CC1

TEMIC’s T OIM3232 interface circuit is designed for this
shutdown feature. The V

_SD, S0 or S1 outputs on the

cc

TOIM3232 can be used to power the transceiver with the
necessary supply current.

source can be an

CC2

pin to GND

CC1

CC2

50

IrDA Field of View: Cone of 15_

0

4.0 6.0 8.0 10.0 12.0 14.0 16.0

Current Control Resistor, Rl ()

If the microcontroller or the microprocessor is unable to
drive the 1.3-mA supply current required by the
transceiver, a low-cost SOT-23 pnp transistor can be used
to switch voltage on and off from the regulated power
supply (see figure 4). The additional component cost is
minimal and saves the system designer additional power

Figure 2. Ie vs R

l

supply costs.

6 Pending—Rev . A, 03-Apr-98

Pre-Release Information

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Shutdown (Cont’d)

+

Power Supply

_

Regulated Power Supply

50 mA

TFDU4100/TFDS4500/TFDT4500

I

IRED

TFDU4100 (Note: Typical Values Listed)

R

ILIM

IRED

Anode

Receive Mode

@5 V: I
@2.7 V: I

Transmit Mode

@5 V: I
@2.7 V: I

= 300 mA, IS = 1.3 mA

IRED

= 300 mA, IS = 1.0 mA

IRED

= 300 mA, IS = 5 mA (Avg.)

IRED

= 300 mA, IS = 3.5 mA (Avg.)

IRED

Power Supply

Microcontroller or

Microprocessor

+
_

Regulated Power Supply

Microcontroller or

Microprocessor

20 mA

20 mA

50 mA

I

S

I

S

V

/SD

CC1

Figure 3.

I

IRED

R

1

IRED

Anode

V

/SD

CC1

TFDU4100 (Note: Typical Values Listed)
Receive Mode

@5 V: I
@2.7 V: I

Transmit Mode

@5 V: I
@2.7 V: I

= 300 mA, IS = 1.3 mA

IRED

= 300 mA, IS = 1.0 mA

IRED

= 300 mA, IS = 5 mA (Avg.)

IRED

= 300 mA, IS = 3.5 mA (Avg.)

IRED

Figure 4.

Pending—Rev. A, 03-Apr-98 7

Pre-Release Information

TFDU4100/TFDS4500/TFDT4500

TFDU4100 – BabyFace (Universal) Package
Mechanical Dimensions

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8 Pending—Rev . A, 03-Apr-98

Pre-Release Information

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TFDU4100/TFDS4500/TFDT4500

TFDS4500 – Side View Package
Mechanical Dimensions

 

 

Pending—Rev. A, 03-Apr-98 9

Pre-Release Information

TFDU4100/TFDS4500/TFDT4500

TFDT4500 – Top View Package
Mechanical Dimensions

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Semiconductor

 

 

10 Pending—Rev. A, 03-Apr-98

Pre-Release Information

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Semiconductor

TFDU4100/TFDS4500/TFDT4500

Recommended SMD Pad Layout

TFDU4100 Ć BabyFace (Universal) Package

a

TFDT4500 Ć Top View Package

TFDS4500 Ć Side View Package

a. The leads of the device should be soldered in the center position.

Pending—Rev. A, 03-Apr-98 11

(note: leads of the device should be at least 0.3

mm within the ends of the pads.  Pad 1 is longer to

designate pin 1 connection to transciver)

Pre-Release Information

TFDU4100/TFDS4500/TFDT4500

Recommended Solder Profile

260
240
220
200
180

_

Temperature ( C)

160
140

120
100

80
60

40
20

120 – 180 Seconds 90 s Max.

2 – 4 _C/Seconds

0

0 50 100 150 200 250 300 350

2 – 4 _C/Seconds

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10 s Max. @ 230 _C

Current Derating Curve

600

500

400

300

Current derating as a function of the

200

Peak Operating Current (mA)

100

maximum forward current of IRED.
Maximum duty cycle: 20%

Time (Seconds)

0

–40 –20 0 20 40 60 80 100

Temperature (_C)

120 140

12 Pending—Rev. A, 03-Apr-98

Pre-Release Information