Datasheet TODV826, TODV825, TODV625, TODV1225, TODV1025 Datasheet (SGS Thomson Microelectronics)
Page 1
TODV 625 ---> 1225
March 1995
ALTERNISTORS
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current
(360° conduction angle)
Tc = 80 °C25 A
I
TSM
Non repetitive surge peak on-state current
( Tj initial = 25°C)
tp = 2.5 ms 390 A
tp = 8.3 ms 250
tp = 10 ms 230
I2tI
2
t value tp = 10 ms 265 A2s
dI/dt Critical rate of rise of on-state current
Gate supply : IG= 500mA diG/dt = 1A/µs
Repetitive
F = 50 Hz
20 A/µs
Non
Repetitive
100
Tstg
Tj
Storage and operating junction temperature range - 40 to + 150
- 40 to + 125
°C
°C
Tl Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260 °C
RD91
(Plastic)
.HIGHCOMMUTATION: > 88 A/ms (400Hz)
.INSULATINGVOLTAGE= 2500V
(RMS)
(ULRECOGNIZED: EB1734)
.HIGH VOLTAGECAPABILITY: V
DRM
=1200 V
DESCRIPTION
Symbol Parameter TODV Unit
625 825 1025 1225
V
DRM
V
RRM
Repetitive peak off-state voltage
Tj = 125 °C
600 800 1000 1200 V
ABSOLUTE RATINGS (limitingvalues)
FEATURES
The TODV 625 ---> 1225 use high performance
passivated glass alternistor technology. Featuring
very high commutation levels and high surge current capability, this family is well adapted to power
control on inductive load (motor, transformer...)
A
2
G
A
1
1/5
Page 2
GATECHARACTERISTICS (maximum values)
Symbol Parameter Value Unit
Rth (c-h) Contact (case-heatsink) with grease 0.1 °C/W
Rth (j-c) DC Junction to case for DC 1.6 °C/W
Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz) 1.2 °C/W
Symbol Test Conditions Quadrant Value Unit
I
GT
VD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX 150 mA
V
GT
VD=12V (DC) RL=33Ω Tj=25°C I-II-III MAX 1.5 V
V
GD
VD=V
DRMRL
=3.3kΩ Tj=125°C I-II-III MIN 0.2 V
tgt VD=V
DRMIG
= 500mA
dIG/dt = 3A/µs
Tj=25°C I-II-III TYP 2.5 µs
I
L
IG=1.2 I
GT
Tj=25°C I-III TYP 100 mA
II 200
IH*I
T
= 500mA gate open Tj=25°C TYP 50 mA
VTM*ITM= 35A tp= 380µs Tj=25°C MAX 1.8 V
I
DRM
I
RRM
V
DRM
Rated
V
RRM
Rated
Tj=25°C MAX 0.02 mA
Tj=125°C MAX 8
dV/dt * Linear slope up to VD=67%V
DRM
gate open
Tj=125°C MIN 500 V/µs
(dI/dt)c * (dV/dt)c = 200V/µs Tj=125°C MIN 20 A/ms
(dV/dt)c = 10V/µs88
* For either polarity of electrode A2voltage with reference to electrode A1.
P
G (AV)
=1W PGM= 40W (tp = 20 µs) IGM=8A(tp=20µs) VGM= 16V (tp = 20 µs).
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
TODV 625 ---> 1225
2/5
Page 3
Fig.1 : Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(Curves are cut off by (dI/dt)c limitation)
Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (T
amb
and T
case
) for different thermal resistances heatsink +
contact.
Fig.3 : RMS on-state current versus case temperature.
tp(s )
1E-3 1E-2 1E-1 1E+0 1E+1
0.01
0.1
1
Zth(j-c)/Rth(j-c)
Fig.4 : relative variation of thermal impedance junction
to case versus pulse duration.
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
Fig.6 : Non Repetitive surge peak on-state current
versus number of cycles.
TOD V 625 --- > 1 225
3/5
Page 4
Fig.7 : Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t ≤ 10ms, and
corresponding value of I2t.
Fig.8 : On-state characteristics (maximum values).
Fig.9 : Safe operating area.
TODV 625 ---> 1225
4/5
Page 5
PACKAGE MECHANICAL DATA
RD91 Plastic
Marking : type number
Weight : 20 g
A
a1
a2
B
d1
b2
C
c1c2
E
F
I
LIL2
N1
N2
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 40.00 1.575
a1 29.90 30.30 1.177 1.193
a2 22.00 0.867
B 27.00 1.063
b1 13.50 16.50 0.531 0.650
b2 24.00 0.945
C 14.00 0.551
c1 3.50 0.138
c2 1.95 3.00 0.077 0.118
E 0.70 0.90 0.027 0.035
F 4.00 4.50 0.157 0.177
I 11.20 13.60 0.441 0.535
L1 3.10 3.50 0.122 0.138
L2 1.70 1.90 0.067 0.075
N1 33° 43° 33° 43°
N2 28° 38° 28° 38°
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Nether-
lands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
TOD V 625 --- > 1 225
5/5
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