Page 1
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BV
/R
DSS
BV
DGS
300V 25Ω 2.4V TN2130K1 TN2130ND
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
DS(ON)
(max) (max) TO-236AB* Die
V
GS(th)
Order Number / Package
TN2130
Low Threshold
Product marking for SOT-23:
N1T❋
where ❋ = 2-week alpha date code
Features
❏ Free from secondary breakdown
❏ Low power drive requirement
❏ Ease of paralleling
❏ Low C
❏ Excellent thermal stability
❏ Integral Source-Drain diode
❏ High input impedance and high gain
and fast switching speeds
ISS
Applications
❏ Logic level interfaces – ideal for TTL and CMOS
❏ Solid state relays
❏ Battery operated systems
❏ Photo voltaic drives
❏ Analog switches
❏ General purpose line drivers
❏ Telecom switches
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Option
Drain
Absolute Maximum Ratings
Drain-to-Source Voltage BV
Drain-to-Gate Voltage BV
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
Distance of 1.6 mm from case for 10 seconds.
*
11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
DSS
DGS
Gate Source
TO-236AB
(SOT-23)
top view
Note: See Package Outline section for dimensions.
1
Page 2
TN2130
Thermal Characteristics
Package ID (continuous)* ID (pulsed) Power Dissipation
@ TA = 25°C °C/W °C/W
TO-236AB 85mA 200mA 0.36W 200 350 85mA 200mA
*
ID (continuous) is limited by max rated Tj.
θ
jc
θ
ja
IDR*I
DRM
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol Parameter Min Typ Max Unit Conditions
BV
DSS
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Drain-to-Source Breakdown Voltage 300 V ID = 1mA, VGS = 0V
Gate Threshold Voltage 0.8 2.4 V VGS = VDS, ID = 1mA
Change in V
with Temperature -5.5 mV/°CID = 1mA, V
GS(th)
GS
= V
DS
Gate Body Leakage 100 nA VGS = ±20V, VDS = 0V
Zero Gate Voltage Drain Current 10 µAV
100 µAV
= 0V, VDS = Max Rating
GS
= 0V, VDS = 0.8 Max Rating
GS
T
= 125°C
A
ON-State Drain Current 250 mA VGS = 10V, VDS = 25V
Static Drain-to-Source ON-State Resistance 25 Ω VGS = 4.5V, ID = 120mA
Change in R
Forward Transconductance 250 m VDS = 25V, ID = 100mA
with Temperature 1.1 %/°CV
DS(ON)
Ω
= 4.5V, ID = 120mA
GS
Input Capacitance 50
Common Source Output Capacitance 15 pF V
= 0V, VDS = 25V, f = 1MHz
GS
Reverse Transfer Capacitance 5
Turn-ON Delay Time 10
Rise Time 7
Turn-OFF Delay Time 12
ns I
VDD = 25V,
= 120mA
D
R
= 25Ω
GEN
Fall Time 15
Diode Forward Voltage Drop 1.8 V ISD = 120mA, VGS = 0V
Reverse Recovery Time 400 ns ISD = 120mA, VGS = 0V
Switching Waveforms and Test Circuit
INPUT
OUTPUT
10V
0V
V
0V
10%
t
(ON)
t
d(ON)
DD
10%
90%
t
r
90%
t
d(OFF)
t
(OFF)
t
F
90%
10%
2
PULSE
GENERATOR
R
gen
INPUT
V
DD
R
L
OUTPUT
D.U.T.
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Typical Performance Curves
TN2130
Output Characteristics
1.0
0.8
VGS =10V
0.6
(amperes)
0.4
D
I
0.2
0
01020304050
VDS (volts)
Transconductance vs. Drain Current
1.0
0.8
V
DS
VDS = 15V
8V
6V
4V
3V
2V
Saturation Characteristics
0.5
0.4
0.3
0.2
(amperes)
D
I
0.1
0
0246 108
VDS (volts)
Power Dissipation vs. Temperature
1.0
0.8
VGS = 10V
6V
4V
3V
2V
0.6
(siements)
0.4
FS
G
0.2
0
0 0.1 0.2
1.0
0.1
(amperes)
D
I
0.01
T
= -55°C
A
25°C
125°C
0.3 0.50.4
ID (amperes)
Maximum Rated Safe Operating Area
SOT-23 (pulsed)
SOT-23 (DC)
TA = 25°C
0.6
(watts)
0.4
D
P
SOT-23
0.2
0
0 15010050
TA (°C)
Thermal Response Characteristics
1.0
0.8
0.6
0.4
0.2
Thermal Resistance (normalized)
1257525
SOT-23
TA = 25°C
PD = 0.36W
0.001
0 100010010
V
DS
(volts)
0
0.001 100.01 0.1 1.0
tp (seconds)
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Typical Performance Curves
BV
Variation with Temperature
DSS
1.1
TN2130
On-Resistance vs. Drain Current
50
1.0
(normalized)
DSS
BV
0.9
-50 0 50 100 150
Tj(°C)
Transfer Characteristics
1.0
= 15V
V
DS
V
= 15V
DS
0.8
0.6
(amperes)
0.4
D
I
0.2
0
= -55°C
T
A
0246810
(volts)
V
GS
25°C
125°C
40
30
V
= 4.5V
GS
V
(ohms)
20
DS(ON)
R
10
0
0 0.2 0.4 0.6 1.00.8
ID (amperes)
VTH and RDS Variation with Temperature
1.2
1.1
1.0
R
DS(ON)
@ 4.5V, 120mA
(normalized)
GS(th)
0.9
V
0.8
-50 0 50 100 150
V
GS(th)
Tj(°C)
= 10V
GS
@ 1mA
2.0
1.6
1.2
0.8
0.4
0
(normalized)
DS(ON)
R
Capacitance vs. Drain-to-Source Voltage
50
f = 1MHz
C
ISS
25
C (picofarads)
C
OSS
C
0
010203040
(volts)
V
DS
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
RSS
Gate Drive Dynamic Characteristics
10
8
VDS = 10V
6
80 pF
(volts)
GS
4
V
2
0
0 0.2 0.4
28pF
0.6
VDS = 40V
0.8 1.0
QG (nanocoulombs)
11/12/01
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
4
www.supertex.com
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