Datasheet TN2124N8, TN2124K1 Datasheet (Supertex)

N-Channel Enhancement-Mode
Vertical DMOS FETs

Ordering Information

BV

/R

DSS

BV

DGS

240V 15Ω 2.0V TN2124N8 TN2124K1

* Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
** Prodcut supplied on 2000 piece carrier tape reels.

DS(ON)

(max) (max) TO-243AA** TO-236AB*

V

GS(th)

Order Number / Package

TN2124

TN2124

Low Threshold

Product marking for SOT-23:

N1C❋

where ❋ = 2-week alpha date code

Features

Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices

and fast switching speeds

ISS

Applications

Logic level interfaces – ideal for TTL and CMOS
Solid state relays

Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches

Absolute Maximum Ratings

Drain-to-Source Voltage BV
Drain-to-Gate Voltage BV
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C

*

Distance of 1.6 mm from case for 10 seconds.

DSS

DGS

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher­ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.

Supertex vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.

Package Options

Drain

G

Gate Source

TO-243AA

TO-236AB

(SOT-23)

top view

Note: See Package Outline section for dimensions.

(SOT-89)

D

S

D

08/30/99

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For complete liability information covering this and
other Supertex products, refer to the Supertex 1998 Databook.

1

Thermal Characteristics

Package ID (continuous)* ID (pulsed) Power Dissipation

@ TA = 25°C °C/W °C/W

TO-236AB 134mA 250mA 0.36W 200 350 134mA 250mA
TO-243AA 230mA 1.1A 1.6W

*

ID (continuous) is limited by max rated Tj.

†

Mounted on FR5 board. 25mmx25mmx1.57mm. Significant P

increase possible on ceramic substrate.

D

†

θ

jc

θ

15 78

ja

†

IDR*I

230mA 1.1A

Electrical Characteristics (@ 25°C unless otherwise specified)

Symbol Parameter Min Typ Max Unit Conditions

BV

DSS

V

GS(th)

∆V

GS(th)

I

GSS

I

DSS

I

D(ON)

R

DS(ON)

∆R

DS(ON)

G

FS

C

ISS

C

OSS

C

RSS

t

d(ON)

t

r

t

d(OFF)

t

f

V

SD

t

rr

Notes:

1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2.All A.C. parameters sample tested.

Drain-to-Source Breakdown Voltage 240 V ID = 1mA, VGS = 0V
Gate Threshold Voltage 0.8 2.0 V VGS = VDS, ID = 1mA
Change in V

with Temperature -5.5 mV/°CID = 1mA, V

GS(th)

GS

= V

DS

Gate Body Leakage 0.1 100 nA VGS = ±20V, VDS = 0V
Zero Gate Voltage Drain Current 1 µAV

100 µAV

= 0V, VDS = Max Rating

GS

= 0V, VDS = 0.8 Max Rating

GS

T

= 125°C

A

ON-State Drain Current 140 mA VGS = 4.5V, VDS = 25V
Static Drain-to-Source

ON-State Resistance
Change in R

with Temperature 0.7 1.0 %/°CI

DS(ON)

30 Ω VGS = 3V, ID = 25mA
15 Ω V

Ω

= 4.5V, ID = 120mA

GS

= 120mA, V

D

GS

= 4.5V
Forward Transconductance 100 170 m VDS = 25V, ID = 120mA
Input Capacitance 38 50
Common Source Output Capacitance 9 15 pF V

= 0V, VDS = 25V, f = 1MHz

GS

Reverse Transfer Capacitance 3 5
Turn-ON Delay Time 4 7
Rise Time 2 5
Turn-OFF Delay Time 7 10

ns ID = 140mA

VDD = 25V

R

= 25Ω

GEN

Fall Time 9 12
Diode Forward Voltage Drop 1.8 V ISD = 120mA, VGS = 0V
Reverse Recovery Time 400 ns ISD = 120mA, VGS = 0V

TN2124

DRM

Switching Waveforms and Test Circuit

INPUT

OUTPUT

10V

0V

V

0V

10%

t

(ON)

t

d(ON)

DD

10%

90%

t

r

90%

t

d(OFF)

t

(OFF)

t

F

90%

10%

2

PULSE

GENERATOR

R

gen

INPUT

V

DD

R

L

OUTPUT

D.U.T.

Typical Performance Curves

TN2124

Output Characteristics

2.0

1.6

1.2

(amperes)

0.8

D

I

0.4

0

0102030 5040

VDS(volts)

Transconductance vs. Drain Current

1.0
VDS= 25V

0.8

Saturation Characteristics

1.0

0.8
V

= 10V

GS

V

= 10V

GS

8V
6V

4V

3V

2V

0.6

0.4

(amperes)

D

I

0.2

0

0246 108

8V

6V

4V

3V

2V

VDS(volts)

Power Dissipation vs. Temperature

2.0

SOT-89

1.6

0.6

(siemens)

0.4

FS

G

0.2

0

0 1.00.2 0.4 0.6 0.8

TA= 125°C

ID(amperes)

Maximum Rated Safe Operating Area

10

1.0

(amperes)

D

I

0.1

0.01
0 100010010

SOT-89 (pulsed)

SOT-23 (pulsed)

SOT-89

SOT-23 (DC)

VDS(volts)

25°C

-55°C

TA= 25°C

1.2

D

0.8

P (watts)

SOT-23

0.4

0.0
0 25 50 75 100 125 150

C)°(

T

A

Thermal Response Characteristics

1.0

0.8

SOT-23
TA = 25°C

0.6

0.4

0.2

PD = 0.36W

SOT-89
TA = 25°C
PD = 1.6W

Thermal Resistance (normalized)

0

0.001 100.01 0.1 1

tp(seconds)

3

Typical Performance Curves

BV

Variation with Temperature

DSS

1.1

1.0

DSS

BV (normalized)

0.9

-50 0 50 100 150

C)°(T

j

On-Resistance vs. Drain Current

50

40

30

VGS = 3V

(ohms)

20

DS(ON)

R

10

0

0 0.2 0.4 0.6 1.00.8

I

(amperes)

D

TN2124

VGS = 4.5V

Transfer Characteristics

1.0

0.8

°C

5

-5

=

T

A

0.6

(amperes)

0.4

D

I

0.2

0

0246810

(volts)

V

GS

°C

5

2

1

°C

5

2

V

5

2

=

V

DS

Capacitance vs. Drain-to-Source Voltage

100

75

VTH and RDS Variation with Temperature

1.4

1.2

1.0

GS(th)

0.8

V (normalized)

0.6

R

-50 0 50 100 150

@ 4.5V, 120mA

DS(ON)

V

@ 1mA

th)

GS(

T

C)°(

j

Gate Drive Dynamic Characteristics

10

8

2.0

1.6

1.2

0.8

0.4

0

DS(ON)

R (normalized)

f = 1MHz

50

C

C

OSS

ISS

C (picofarads)

25

C

RSS

0

010203040

VDS(volts)

6

(volts)

V

= 10V

GS

4

V

2

0

0 0.2 0.4

32 pF

DS

100pF

Q (nanocoulombs)

G

1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: [phone] • FAX: [phone]
www.supertex.com

4

0.6

V

= 40V

DS

0.8 1.0

08/30/99