Datasheet TN2106ND, TN2106N3, TN2106K1 Datasheet (Supertex)

N-Channel Enhancement-Mode Vertical DMOS FETs

Ordering Information

BV

/R

DSS

BV

DGS

60V 2.5Ω 2.0V TN2106K1 TN2106N3 TN2106ND

*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

DS(ON)

(max) (max) TO-236AB* TO-92 Die

V

GS(th)

Order Number / Package

TN2106

Low Threshold

Product marking for SOT-23:

N1L❋

where ❋ = 2-week alpha date code

Features

Free from secondary breakdown Low power drive requirement Ease of paralleling Low C Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices

and fast switching speeds

ISS

Applications

Logic level interfaces – ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches

Advanced DMOS Technology

These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Package Options

Drain

Absolute Maximum Ratings

Drain-to-Source Voltage BV Drain-to-Gate Voltage BV Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55°C to +150°C Soldering Temperature* 300°C

Distance of 1.6 mm from case for 10 seconds.

*

DSS

DGS

7-71

Gate Source

TO-236AB

(SOT-23)

top view

Note: See Package Outline section for dimensions.

S G D

TO-92

Thermal Characteristics

Package ID (continuous)* ID (pulsed) Power Dissipation

@ TA = 25°C °C/W °C/W

TO-236AB 0.28A 0.8A 0.36W 200 350 0.28A 0.8A TO-92 0.30A 1.0A 0.74W 125 170 0.30A 1.0A

* I

(continuous) is limited by max rated Tj.

D

θ

jc

θ

ja

IDR*I

Electrical Characteristics (@ 25°C unless otherwise specified)

Symbol Parameter Min Typ Max Unit Conditions

BV

DSS

V

GS(th)

∆V

GS(th)

I

GSS

I

DSS

I

D(ON)

R

DS(ON)

∆R

DS(ON)

G

FS

C

ISS

C

OSS

C

RSS

t

d(ON)

t

r

t

d(OFF)

t

f

V

SD

t

rr

Notes:

1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

Drain-to-Source Breakdown Voltage 60 V ID = 1mA, VGS = 0V Gate Threshold Voltage 0.6 2.0 V VGS = VDS, ID = 1mA Change in V

with Temperature -3.8 -5.5 mV/°CID = 1mA, V

GS(th)

GS

= V

DS

Gate Body Leakage 0.1 100 nA VGS = ±20V, VDS = 0V Zero Gate Voltage Drain Current 1 µAV

100 µAV

= 0V, VDS = Max Rating

GS

= 0V, VDS = 0.8 Max Rating

GS

T

= 125°C

A

ON-State Drain Current 0.6 A VGS = 10V, VDS = 25V Static Drain-to-Source

ON-State Resistance Change in R

with Temperature 0.70 1.0 %/°CV

DS(ON)

Forward Transconductance 150 400 m VDS = 25V, ID = 500mA

5.0 Ω VGS = 4.5V, ID = 200mA

2.5 Ω V

= 10V, ID = 500mA

GS

= 10V, ID = 500mA

GS

Ω

Input Capacitance 35 50 Common Source Output Capacitance 17 25 pF V

= 0V, VDS = 25V, f = 1MHz

GS

Reverse Transfer Capacitance 7 8 Turn-ON Delay Time 3 5 Rise Time 5 8 Turn-OFF Delay Time 6 9

ns ID = 0.5A

VDD = 25V

R

= 25Ω

GEN

Fall Time 5 8 Diode Forward Voltage Drop 1.2 1.8 V ISD = 0.5A, VGS = 0V Reverse Recovery Time 400 ns ISD = 0.5A, VGS = 0V

TN2106

DRM

Switching Waveforms and Test Circuit

INPUT

OUTPUT

10V

0V

V

0V

10%

t

(ON)

t

d(ON)

DD

10%

90%

t

r

90%

t

d(OFF)

t

(OFF)

t

F

90%

10%

7-72

PULSE

GENERATOR

R

gen

INPUT

V

DD

R

L

OUTPUT

D.U.T.

Typical Performance Curves

TN2106

Output Characteristics

2.5

2.0

1.5

(amperes)

1.0

D

I

0.5

0

0102030 5040

VDS(volts)

Transconductance vs. Drain Current

0.5

0.4

VDS= 25V

10V

8V

6V

4V 3V

Saturation Characteristics

2.5

2.0

1.5

1.0

(amperes)

D

I

0.5

0

0246 108

V

DS

Power Dissipation vs. Temperature

1.0

0.8 TO-92

VGS =VGS =

10V

8V

6V

4V 3V

(volts)

0.3

(siemens)

0.2

FS

G

0.1

0

0 0.40.2

1.0

0.1

(amperes)

D

I

0.01

TA = -55°C

25°C

125°C

0.6 1.00.8

ID(amperes)

Maximum Rated Safe Operating Area

SOT-23 (pulsed)

SOT-23 (DC)

0.6

D

0.4

P (watts)

0.2

1.0

0.8

0.6

0.4

0

SOT-23

0 15010050

TAC)°(

Thermal Response Characteristics

TO-236AB TA = 25°C PD = 0.36W

TO-92 TC = 25°C PD = 1W

1257525

0.001

0.1 100101

TA = 25°C

VDS(volts)

0.2

Thermal Resistance (normalized)

0

0.001 100.01 0.1 1.0

tp(seconds)

7-73

Typical Performance Curves

BV

Variation with Temperature

DSS

TN2106

On-Resistance vs. Drain Current

10

1.1

1.0

(normalized)

DSS

BV

0.9

-50 0 50 100 150

Tj (°C)

Transfer Characteristics

1.0

V

= 25V

DS

0.8

0.6

T

A

= -55°C

8

6

(ohms)

4

DS(ON)

R

2

0

0 0.5 1.0 1.5 2.52.0

VGS= 4.5V

ID (amperes)

V

1.2

1.0

GS(th)

and R

Variation with Temperature

)

DS(ON

R

DS(ON)

VGS= 10V

@ 10V, 0.5A

2.0

1.6

1.2

(amperes)

0.4

D

I

25°C

125°C

0.2

0

0246810

(volts)

V

GS

Capacitance vs. Drain-to-Source Voltage

100

f = 1MHz

75

50

C (picofarads)

25

C

RSS

0

0 10203040

V

DS

(volts)

C

OSS

ISS

0.8

(normalized)

GS(th)

0.6

V

0.4

-50 0 50 100 150

V

GS(th)

@ 1mA

Tj (°C)

Gate Drive Dynamic Characteristics

10

8

6

(volts)

GS

4

V

2

0

0 0.2 0.4

38 pF

Q

G

V

= 10V

DS

92 pF

0.6

(nanocoulombs)

V

= 20V

DS

0.8 1.0

0.8

0.4

0

(normalized)

DS(ON)

R

7-74