Datasheet tn2106 Datasheet

● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

N-Channel Enhancement-Mode

YY = Year Sealed WW = Week Sealed = “Green” Packaging

T N

2 1 0 6 Y Y W

W

DRAIN

SOURCE

GATE

N1LW

W = Code for week sealed = “Green” Packagin

g

GATE

SOURCE

DRAIN

Vertical DMOS FET

TN2106

Features

► Free from secondary breakdown ► Low power drive requirement ► Ease of paralleling ► Low C

and fast switching speeds

ISS

► Excellent thermal stability ► Integral source-drain diode ► High input impedance and high gain ► Complementary N- and P-channel devices

Applications

Logic level interfaces - ideal for TTL and CMOS

►

Solid state relays

►

Battery operated systems

►

Photo-voltaic drives

►

Analog switches

►

General purpose line drivers

►

Telecom switches

►

General Description

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefﬁcient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Ordering Information

Device

Package Option

TO-236AB (SOT-23) TO-92

BV

DSS

/BV

(V)

DGS

TN2106 TN2106K1-G TN2106N3-G 60 2.5 2.0

-G indicates package is RoHS compliant (‘Green’)

R

DS(ON)

(max)

(Ω)

Pin Conﬁgurations

Absolute Maximum Ratings

Parameter Value

Drain-to-source BV

Drain-to-gate BV

DSS

DGS

Gate-to-source ±20V

Operating and storage temperature -55OC to +150OC

Soldering temperature* 300OC

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground.

* Distance of 1.6mm from case for 10 seconds.

TO-236AB (SOT-23) (K1)

Product Marking

TO-236AB (SOT-23) (K1)

TO-92 (N3)

V

GS(th)

(max)

(V)

● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

Thermal Characteristics

90%

10%

90%

10%

PULSE

GENERATO

R

V

DD

R

L

OUTPUT

D.U.T

.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

F

t

r

INPUT

OUTPUT

10V

V

DD

R

GEN

0V

I

D

Package

(continuous)

(mA)

†

TO-236AB (SOT-23) 280 0.8 0.36 200 350 280 0.8

TO-92

Notes:

† ID (continuous) is limited by max rated Tj .

300 1.0 0.74 125 170 300 1.0

I

D

(pulsed)

(A)

Power Dissipation

@TA = 25OC

(W)

θ

jc

(OC/W)

θ

ja

(OC/W)

I

DR

(mA)

†

TN2106

I

DRM

(A)

Electrical Characteristics (T

= 25OC unless otherwise speciﬁed)

A

Sym Parameter Min Typ Max Units Conditions

BV

V

GS(th)

ΔV

I

GSS

I

DSS

I

D(ON)

R

DS(ON)

ΔR

DS(ON)

G

C

t

d(ON)

t

d(OFF)

V

t

Notes:

1.

2.

OSS

RSS

t

Drain-to-source breakdown voltage 60 - - V VGS = 0V, ID = 1.0mA

DSS

Gate threshold voltage 0.6 - 2.0 V VGS = VDS, ID = 1.0mA

GS(th)

Change in V

with temperature - -3.8 -5.5 mV/OC VGS = VDS, ID = 1.0mA

GS(th)

Gate body leakage - 0.1 100 nA VGS = ± 20V, V

Zero gate voltage drain current

- - 1.0

- - 100

VGS = 0V, V

µA

VDS = 0.8Max Rating, VGS = 0V, TA = 125OC

On-state drain current 0.6 - - A VGS = 10V, VDS = 25V

Static drain-to-source on-state resistance

Change in R

Forward transductance 150 400 - mmho VDS = 25V, ID = 500mA

FS

Input capacitance - 35 50

ISS

with temperature - 0.70 1.0 %/OC VGS = 10V, ID = 500mA

DS(ON)

- - 5.0

- - 2.5 VGS = 10V, ID = 500mA

Common source output capacitance - 17 25

Reverse transfer capacitance - 7.0 8.0

VGS = 4.5V, ID = 200mA

Ω

VGS = 0V,

pF

VDS = 25V, f = 1.0MHz

Turn-on delay time - 3.0 5.0

Rise time - 5.0 8.0

r

Turn-off delay time - 6.0 9.0

Fall time - 5.0 8.0

f

Diode forward voltage drop - 1.2 1.8 V VGS = 0V, ISD = 500mA

SD

Reverse recovery time - 400 - ns VGS = 0V, ISD = 500mA

rr

All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) All A.C. parameters sample tested.

ns

VDD = 25V, ID = 0.5A, R

GEN

= 25Ω

= 0V

DS

= Max Rating

DS

Switching Waveforms and Test Circuit

2

● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

Typical Performance Curves

Output Characteristics

2.5

2.0

1.5

1.0

0.5

0

VDS(volts)

I

) s erepma

(

D

Saturation Characteristics

V

DS

(volts)

I

)s e

re p

ma(

D

Maximum Rated Safe Operating Area

0.1 100101

1.0

0.1

0.01

0.001

VDS(volts)

I

)s er

epma(

D

Thermal Response Characteristics

)d

ezilamr

on( ec

na tsis

eR la

m r

eh T

1.0

0.8

0.6

0.4

0.2

0

0.001 1

00.01 0.1 1.0

tp(seconds)

Transconductance vs. Drain Current

0.5

0.4

0.3

0.2

0.1

0

0 0.40.2

G

SF

)snem

e

i s

(

ID(amperes)

Power Dissipation vs. Temperature

0 15010050

1.0

0.8

0.6

0.4

0.2

0

1257525

TAC)O(

D

P

)s ttaw(

TO -2 36AB

T

A

= 2 5

O

C

P

D

= 0 .36

W

TO -9 2

SO T- 23

TA = -55OC

VDS= 25V

0 10 20 30 5040

4V

3V

0 2 4 6 108

25OC

125OC

0.6 1.00.8

10V

8V

6V

2.5

2.0

1.5

1.0

0.5

0

4V

3V

10V

8V

6V

SO T- 23 ( DC)

SO T- 23 ( pulse d)

VGS =

TA = 25OC

TO -9 2

T

C

= 2 5

O

C

P

D

= 1 W

TN2106

3

● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

Typical Performance Curves (cont.)

Gate Drive Dynamic Characteristics

QG(nanocoulombs)

V

SG

) st lo

v

(

Tj (OC)

V

)ht (SG

) dezilamron

(

R

)NO

(S D

) dezilamr

on(

V

GS(th)

and R

DS(ON

)

Variation with Temperature

On-Resistance vs. Drain Current

R

)N

O(SD

)sm

ho (

V B

SS D

) d e zi l am

ron (

Tj (OC)

Transfer Characteristics

V

GS

(volts)

I

D

) s ere

pma

(

Capacitance vs. Drain-to-Source Voltage

100

) sda

ra fo

c

ip ( C

VDS(volts)

I

D

(amperes

)

BV

DSS

Variation with Temperature

0 10 20 30 40

50

75

25

0

0 2 4 6 8 1

0

1.0

0.8

0.6

0.4

0.2

0

-50 0 50 100 150

1.1

1.0

10

8

6

4

2

0

1.2

1.0

0.8

0.6

0.4

10

8

6

4

2

0 0.2 0.4

0.6

0.8

1.0

-50 0

50 100 150

38 pF

VDS= 20V

VDS= 10V

VGS= 4.5V

VGS= 10V

T

A

= -55

O

C

VDS= 25V

125

O

C

0 0.5 1.0 1.5 2.52.0

f = 1MHz

C

ISS

C

OSS

C

RSS

0.9

92 pF

2.0

1.6

1.2

0.8

0.4

0

V

GS(th)

@ 1mA

25

O

C

0

R

DS(ON)

@ 10V, 0.5A

TN2106

4

● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

3-Lead TO-236AB (SOT-23) Package Outline (K1/T)

View B

Vi

ew A - A

Side View

Top View

View B

2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch

TN2106

Symbol A A1 A2 b D E E1 e e1 L L1 θ

Dimension

(mm)

JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999. † This dimension is a non-JEDEC dimension.

Drawings not to scale. Supertex Doc.#: DSPD-3TO236ABK1, Version B072208.

MIN 0.89 0.01 0.88 0.30 2.80 2.10 1.20

NOM - - 0.95 - 2.90 - 1.30 0.50 -

MAX 1.12 0.10 1.02 0.50 3.04 2.64 1.40 0.60 8

0.95 BSC

1.90

BSC

5

0.20

†

0.54 REF

O

0

O

Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. website: http//www.supertex.com

.

1235 Bordeaux Drive, Sunnyvale, CA 94089

Tel: 408-222-8888

www.supertex.com

3-Lead TO-92 Package Outline (N3)

Seating Plane

1

2

3

Front View

Side View

Bottom View

E1

E

D

e1

L

e

c

1 2 3

b

A

TN2106

Symbol A b c D E E1 e e1 L

MIN .170 .014

Dimensions

(inches)

NOM - - - - - - - - -

MAX .210 .022

JEDEC Registration TO-92. * This dimension is not speciﬁed in the original JEDEC drawing. The value listed is for reference only. † This dimension is a non-JEDEC dimension.

Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version D080408.

(The package drawing(s) in this data sheet may not reﬂect the most current speciﬁcations. For the latest package outline

†

.014

.022

†

.175 .125 .080 .095 .045 .500

†

.205 .165 .105 .105 .055 .610*

information go to http://www.supertex.com/packaging.html.)

Doc.# DSFP-TN2106 A091208

6