Page 1
PRODUCT SUMMARY
TN0601L, VN0606L, VN66AFD
Vishay Siliconix
N-Channel 60-V (D-S) MOSFETs
Part Number V
TN0601L 1.8 @ VGS = 10 V 0.5 to 2 0.47
VN0606L 60 3 @ VGS = 10 V 0.8 to 2 0.33
VN66AFD 3 @ VGS = 10 V 0.8 to 2.5 1.46
(BR)DSS
Min (V)
r
DS(on)
Max (W)
V
(V) ID (A)
GS(th)
FEATURES BENEFITS APPLICATIONS
D Low On-Resistance: 1.2 W
D Low Threshold: <1.6 V
D Low Input Capacitance: 35 pF
D Fast Switching Speed: 9 ns
D Low Input and Output Leakage
TO-226AA
(TO-92)
S
G
D
1
2
3
Top View
TN0601L
VN0606L
D Low Offset Voltage
D Low-Voltage Operation
D Easily Driven Without Buffer
D High-Speed Circuits
D Low Error Voltage
Device Marking
Front View
TN0601L
“S” TN
0601L
xxyy
VN0606L
“S” VN
0606L
xxyy
“S” = Siliconix Logo
xxyy = Date Code
D Direct Logic-Level Interface: TTL/CMOS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Solid-State Relays
TO-220SD
(Tab Drain)
1
S
G
2
D
3
Top View
VN66AFD
Device Marking
Front View
VN66AFD
VN66AFD
“S” xxyy
“S” = Siliconix Logo
xxyy = Date Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol TN0601L VN0606L VN66AFD
Drain-Source Voltage V
Gate-Source Voltage V
Continuous Drain Current
Continuous Drain Current
(T
= 150_C)
J
Pulsed Drain Current
Power Dissipation
Thermal Resistance, Junction-to-Ambient R
Thermal Resistance, Junction-to-Case R
Operating Junction and Storage Temperature Range TJ, T
Notes
a. Pulse width limited by maximum junction temperature.
b. Reference case for all temperature testing.
Document Number: 70201
S-04279—Rev. E, 16-Jul-01
a
TA= 25_C
TA= 100_C
TA= 25_C
TA= 100_C
I
P
DS
GS
I
D
DM
D
thJA
thJC
stg
60 60 60
"20 "30 "30
0.47 0.33 1.46
0.29 0.21 0.92
1.5 1.6 3
0.8 0.8 15
0.32 0.32 6
156 156
–55 to 150
8.3
b
Unit
V
A
W
_
_C/W
_C
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11-1
Page 2
TN0601L, VN0606L, VN66AFD
m
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Conditions TypaMin Max Min Max Min Max Unit
Static
Drain-Source Breakdown Voltage V
(BR)DSS
Gate-Threshold Voltage V
Gate-Body Leakage I
Zero Gate VoltageDrain Current I
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Common Source Output Conductance
b
b
b
b
r
Dynamic
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Switching
c
GS(th)
GSS
GSS
DSS
DSS
I
D(on)
DS(on)
g
fs
g
os
iss
oss
rss
VGS = 0 V, ID = 10 mA
VDS = VGS, ID = 0.25 mA 1.6 0.5 2 V
VDS = VGS, ID = 1 mA 1.7 0.8 2 0.8 2.5
VDS = 0 V, VGS = "30 V "100 "100
TC = 125_C
VDS = 0 V, VGS = "20 V "10
VDS = 60 V, VGS = 0 V 10
T
= 125_C
J
VDS = 48 V, VGS = 0 V 1 1
T
= 125_C
J
TC = 125_C
VDS = 10 V, VGS = 4.5 V 0.5 0.25
VDS = 10 V, VGS = 10 V 2.4 1 1.5 1.5
VGS = 3.5 V, ID = 0.04 A 4 5
VGS = 4.5 V, ID = 0.25 A 2 3
T
= 125_C
J
VGS = 5 V, ID = 0.3 A 2.3 5
VGS = 10 V, ID = 0.5 A 1.2 3
T
= 125_C
J
VGS = 10 V, ID = 1 A 1.3 1.8 3
TC = 125_C
VDS = 10 V, ID = 0.5 A 350 200 170 170
VDS = 10 V, ID = 0.1 A 0.3
VDS = 25 V, VGS = 0 V,
f = 1 MHz
f = 1 MHz
Limits
TN0601L VN0606L VN66AFD
70 60 60 60
"500
500
100
10
3.8 6
2.3 6
2.5 6
35 60 50 50
25 50 40 40 pF
6 10 10 10
nA
mA
A
W
mS
Turn-On Time t
Turn-Off Time t
Notes
a. For DESIGN AID ONLY, not subject to production testing.. VNDQ06
b. Pulse test: PW v 300 ms duty cycle v2%.
c. Switching time is essentially independent of operating temperature.
ON
OFF
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11-2
VDD = 25 V, RL = 23 W
ID ^ 1 A, V
R
G
GEN
= 25 W
= 10 V
8 15 10 15
9 15 10 15
Document Number: 70201
S-04279—Rev. E, 16-Jul-01
ns
Page 3
TN0601L, VN0606L, VN66AFD
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Vishay Siliconix
2.0
VGS= 10 V
1.6
1.2
0.8
– Drain Current (A)
D
I
0.4
0
012345
– Drain-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V)
V
DS
8 V
Transfer Characteristics On-Resistance vs. Gate-to-Source Voltage
Ohmic Region Characteristics Output Characteristics for Low Gate Drive
1.0
0.8
0.6
VDS= 15 V
TJ = –55_C
25_C
125_C
7 V
6 V
5 V
4 V
3 V
100
80
60
40
– Drain Current (mA)
D
I
20
0
0 0.4 0.8 1.2 1.6 2.0
2.8
2.4
2.0
1.6
VGS= 10 V
2.8 V
2.6 V
2.4 V
2.2 V
2.0 V
1.0 A
0.5 A
1.8 V
0.4
– Drain Current (A)
D
I
0.2
0
02 10
On-Resistance vs. Drain Current
0 0.4 2.0
– Drain-Source On-Resistance ( Ω )
DS(on)
r
2.5
2.0
1.5
1.0
0.5
0
468
VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V)
VGS= 10 V
0.8 1.2 1.6
ID – Drain Current (A)
1.2
– On-Resistance ( Ω )
0.8
DS(on)
r
0.4
2.25
2.00
1.75
1.50
1.25
(Normalized)
1.00
– Drain-Source On-Resistance ( Ω )
0.75
DS(on)
r
0.50
ID = 0.1 A
0
0 4 8 12 16 20
Normalized On-Resistance
vs. Junction Temperature
VGS= 10 V
ID= 1.0 A
0.2 A
–50 –10 150
30 70 110
T
– Junction Temperature (_C)
J
Document Number: 70201
S-04279—Rev. E, 16-Jul-01
www.vishay.com
11-3
Page 4
TN0601L, VN0606L, VN66AFD
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
10
VDS= 5 V
1
– Drain Current (mA)
0.1
D
I
0.01
0.5
15.0
ID= 1.0 A
12.5
10.0
Threshold Region Capacitance
120
VGS= 0 V
TJ = 150_C
100
f = 1 MHz
80
60
25_C
40
C – Capacitance (pF)
20
–55_C125_C
0
1.0 1.5 2.0
010 50
– Drain-to-Source Voltage (V)VGS – Gate-to-Source Voltage (V)
V
DS
Gate Charge Load Condition Effects on Switching
100
VDD = 25 V
R
= 25 W
G
VDS = 30 V
50
20
= 0 to 10 V
V
GS
C
iss
C
oss
C
rss
20 30 40
7.5
5.0
– Gate-to-Source Voltage (V)
GS
2.5
V
0
0 100 600
200 300 400
Q
– Total Gate Charge (pC)
g
VDS = 48 V
500
10
5
– Switching Time (ns)
t
2
1
0.1 1 10
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1
0.02
Thermal Impedance
Normalized Effective Transient
0.01
0.1 5 K1 100 500100.5 5 50 1 K
0.01
Single Pulse
t1 – Square Wave Pulse Duration (sec)
I
– Drain Current (A)
D
Notes:
P
DM
t
1
t
1. Duty Cycle, D =
2. Per Unit Base = R
3. TJM – TA = PDMZ
2
t
d(off)
t
r
t
d(on)
t
f
t
1
t
2
= 156_C/W
thJA
(t)
thJA
10 K
www.vishay.com
11-4
Document Number: 70201
S-04279—Rev. E, 16-Jul-01
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