Datasheet tn0106 Datasheet

Supertex inc.

N-Channel Enhancement-Mode Vertical DMOS FET

TN0106

Features

► Low threshold - 2.0V max. ► High input impedance ► Low input capacitance - 50pF typical ► Fast switching speeds ► Low on-resistance ► Free from secondary breakdown ► Low input and output leakage

Applications

► Logic level interfaces – ideal for TTL and CMOS ► Solid state relays ► Battery operated systems ► Photo voltaic drives ► Analog switches ► General purpose line drivers ► Telecom switches

Ordering Information

General Description

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors

and the high input impedance and positive temperature coefcient

inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Package Wafer / Die Options

Device

TO-92

NW

(Die in wafer form)

(Die on adhesive tape)

NJ

(Die in wafe pack)

TN0106 TN0106N3-G TN1506NW TN1506NJ TN1506ND

For packaged products, -G indicates package is RoHS compliant (‘Green’). Devices in Wafer / Die form are RoHS compliant (‘Green’).

Refer to Die Specication VF15 for layout and dimensions.

Product Summary

R

Device

BV

DSS

/BV

(V)

DGS

DS(ON)

(max)

(Ω)

TN0106N3-G 60 3.0 2.0 2.0

I

D(ON)

(min)

(A)

V

GS(th)

(max)

(V)

Pin Congurations

DRAIN

SOURCE

Absolute Maximum Ratings

Parameter Value

Drain-to-source voltage BV

Drain-to-gate voltage BV

DSS

DGS

Gate-to-source voltage ±20V

Operating and storage temperature -55OC to +150OC

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground.

TO-92 (N3)

Product Marking

SiTN

0106

YYWW

Package may or may not include the following marks: Si or

YY = Year Sealed WW = Week Sealed = “Green” Packaging

TO-92 (N3)

GATE

ND

Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

Thermal Characteristics

V

Package

TO-92 350 2.0 1.0 125 170 350 2.0

Notes:

(continuous) is limited by max rated Tj .

† I

D

(continuous)

I

D

(mA)

TN0106

I

†

D

(pulsed)

(A)

Power Dissipation

@TC = 25OC

(W)

θ

jc

(OC/W)

θ

ja

(OC/W)

I

DR

(mA)

†

I

DRM

(A)

Electrical Characteristics (T

= 25OC unless otherwise specied)

A

Sym Parameter Min Typ Max Units Conditions

BV

V

GS(th)

ΔV

GS(th)

I

GSS

I

DSS

I

D(ON)

R

DS(ON)

ΔR

DS(ON)

G

C

OSS

C

RSS

t

d(ON)

t

d(OFF)

t

V

t

Notes:

1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

Drain-to-source breakdown voltage 60 - - V VGS = 0V, ID = 1.0mA

DSS

Gate threshold voltage 0.6 - 2.0 V VGS = VDS, ID= 0.5mA

Change in V

with temperature - -3.2 -5.0 mV/OC VGS = VDS, ID= 1.0mA

GS(th)

Gate body leakage - - 100 nA VGS = ± 20V, VDS = 0V

= 0V, VDS = Max Rating

V

GS

V

= 0.8 Max Rating,

DS

VGS = 0V,TA = 125°C

VGS = 5.0V, VDS = 25V

Zero Gate voltage drain current

On-state drain current

- - 10 µA

- - 500

0.75 1.4 A

2.0 3.4 - VGS = 10V, VDS = 25V

Static drain-to-source on-state resistance

- 2.0 4.5

VGS = 4.5V, ID = 250mA

Ω

- 1.6 3.0 VGS = 10V, ID = 500mA

Change in R

Forward transductance 225 400 - mmho VDS = 25V, ID = 500mA

FS

Input capacitance - 50 60

ISS

Common source output capacitance - 25 35

Reverse transfer capacitance - 4.0 8.0

with temperature - 0.6 1.1 %/OC VGS = 10V, ID = 500mA

DS(ON)

VGS = 0V,

pF

VDS = 25V, f = 1.0MHz

Turn-on delay time - 2.0 5.0

Rise time - 3.0 5.0

r

Turn-off delay time - 6.0 7.0

Fall time - 3.0 6.0

f

Diode forward voltage drop 1.0 1.5 V VGS = 0V, ISD = 500mA

SD

Reverse recovery time - 400 - ns VGS = 0V, ISD = 500mA

rr

ns

VDD = 25V, ID = 1.0A,

R

GEN

= 25Ω

Switching Waveforms and Test Circuit

10V

INPUT

OUTPUT

0V

VDD

0V

10%

t

d(ON)

t

(ON)

10%

90%

t

r

Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

90%

t

d(OFF)

t

(OFF)

t

f

90%

10%

DD

R

Pulse

Generator

R

GEN

INPUT

2

L

OUTPUT

D.U.T.

Typical Performance Curves

TN0106

5.0

4.0

3.0

(amperes)

2.0

D

I

1.0

0

0 10 20 30 40 50

0.5

0.4

Output Characteristics

V

(volts)

DS

Transconductance vs. Drain Current

TA = -55OC

TA = 25OC

0.3

(siemens)

FS

0.2

G

T

= 10V

V

GS

8V

6V

4V

2V

= 150OC

A

5.0

4.0

3.0

(amperes)

2.0

D

I

1.0

0

2.0

1.0

(watts)

D

P

Saturation Characteristics

= 10V

V

GS

0 2.0 4.0 6.0 8.0 10

V

(volts)

DS

Power Dissipation vs. Case Temperature

TO-92

8V

6V

4V

2V

0.1

V

0

0 0.6 1.2 1.8 2.4 3.0

DS

ID (amperes)

Maximum Rated Safe Operating Area

10

TC = 25OC

TO-92 (pulsed)

1.0

(amperes)

D

TO-92 (DC)

I

0.1

0.01

1.0 10 100 1000

V

(volts)

DS

= 25V

0

0 25 50 75 100 125 150

TC (OC)

Thermal Response Characteristics

1.0

0.8

0.6

0.4

0.2

Thermal Resistance (normalized)

0

0.001 0.01 0.1 1.0 10

T

C

TO-92

= 25OC

P

= 1W

D

tp (seconds)

Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

3

Typical Performance Curves (cont.)

BV

Variation with Temperature

1.3

1.2

DSS

On-Resistance vs. Drain Current

5.0

V

= 5.0V

4.0

GS

TN0106

V

= 10V

GS

1.0

(normalized)

1.0

DSS

BV

0.9

0.8

-50 0 50 100 150

Tj (OC)

3.0

2.4

1.8

(amperes)

1.2

D

I

0.6

Transfer Characteristics

V

= 25V

DS

T

A

= -55OC

O

25

150OC

3.0

(ohms)

2.0

DS(ON)

R

1.0

0

0 1.0 2.0 3.0 4.0 5.0

ID (amperes)

V

and R

(th)

1.4

1.2

C

1.0

(normalized)

0.8

GS(th)

V

0.6

Variation with Temperature

DS

@ 0.5mA

V

(th)

@ 10V, 0.5A

R

DS(ON)

1.4

1.2

1.0

0.8

0.6

(normalized)

DS(ON)

R

0

0 2.0 4.0 6.0 8.0 10

Capacitance vs. Drain-to-Source Voltage

100

75

50

f = 1.0MHz

V

GS

(volts)

C (picofarads)

25

0

0 10 20 30 40

V

(volts)

DS

C

ISS

C

OSS

C

RSS

0.4

-50 0 50 100 150

Tj (OC)

Gate Drive Dynamic Characteristics

10

V

= 10V

55pF

DS

V

= 40V

DS

8.0

6.0

(volts)

GS

V

4.0

2.0

0

0 1.0 2.0 3.0 4.0 5.0

50pF

QG (nanocoulombs)

Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

4

0.4

Supertex inc.

94089

.supertex.com

3-Lead TO-92 Package Outline (N3)

D

Seating Plane

1 2 3

L

TN0106

A

e1

Front View

E1

1

Bottom View

Symbol A b c D E E1 e e1 L

MIN .170 .014

Dimensions

(inches)

NOM - - - - - - - - -

MAX .210 .022

JEDEC Registration TO-92.

* This dimension is not specied in the JEDEC drawing.

† This dimension differs from the JEDEC drawing.

Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009.

†

b

c

e

Side View

E

3

2

†

.014

.022

.175 .125 .080 .095 .045 .500

†

.205 .165 .105 .105 .055 .610*

(The package drawing(s) in this data sheet may not reect the most current specications. For the latest package outline

information go to http://www.supertex.com/packaging.html.)

Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives

an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)

1235 Bordeaux Drive, Sunnyvale, CA

Doc.# DSFP-TN0106 B030411

5

Tel: 408-222-8888

www