Page 1
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BV
/R
DSS
BV
DGS
40V 1.8Ω 1.6V 2.0A TN0104N3 — TN0104ND
40V 2.0Ω 1.6V 2.0A — TN0104N8 —
*
Same as SOT-89. Product supplied on 2000 piece carrier tape reels.
†
MIL visual screening available
DS(ON)
(max) (max) (min) TO-92 TO-243AA* Die
V
GS(th)
I
D(ON)
Order Number / Package
Product marking for TO-243AA:
TN0104
Low Threshold
†
7
Features
Low threshold —1.6V max.
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
Applications
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
TN1L*
Where *=2-week alpha date code
Low Threshold DMOS Technology
These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces
devices with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all MOS
structures, these devices are free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage BV
Drain-to-Gate Voltage BV
Gate-to-Source Voltage ± 20V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
For TO-39 and TO-92, distance of 1.6 mm from case for 10 seconds.
*
DSS
DGS
7-31
G
D
S
D
TO-243AA
(SOT-89)
Note: See Package Outline section for dimensions.
S G D
TO-92
Page 2
Thermal Characteristics
Package ID (continuous)* ID (pulsed) Power Dissipation
@ TC = 25°C °C/W °C/W
TO-92 0.80A 2.40A 1.0W 125 170 0.80A 2.40A
TO-243AA 1.40A 2.90A 1.6W
* I
(continuous) is limited by max rated Tj.
D
†
TA = 25°C. Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Signficant PD increase possible on ceramic substrate.
†
θ
jc
θ
15 78
ja
†
IDR*I
1.40A 2.90A
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol Parameter Min Typ Max Unit Conditions
BV
DSS
Drain-to-Source
Breakdown Voltage
40
VV
= 0V, ID = 1.0mA
GS
TN0104
DRM
V
∆V
I
GSS
I
DSS
GS(th)
GS(th)
Gate Threshold Voltage 0.6 1.6 V VGS = VDS, ID = 500µA
Change in V
with Temperature -3.8 -5.0 mV/°CVGS = VDS, ID = 1.0mA
GS(th)
Gate Body Leakage 0.1 100 nA VGS = ±20V, VDS = 0V
Zero Gate Voltage Drain Current 1 µAV
100 µA
I
D(ON)
ON-State Drain Current 0.35 VGS = 3V, VDS = 20V
0.5 1.1 V
2.0 2.6 V
R
DS(ON)
Static Drain-to-Source
ON-State Resistance
All Packages
5.0 VGS = 3V, ID = 50mA
2.3 2.5 V
TO-92 1.5 1.8 V
TO-243AA 2.0 V
∆R
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
DS(ON)
Change in R
Forward Transconductance 0.34 0.45 VDS = 20V, ID = 0.5A
Input Capacitance 70
Common Source Output Capacitance 50 pF
Reverse Transfer Capacitance 15
Turn-ON Delay Time 3.0 5.0
Rise Time 7.0 8.0
Turn-OFF Delay Time 6.0 9.0
Fall Time 5.0 8.0
Diode Forward TO-92 1.2 1.8 VGS = 0V, ISD = 1.0A
Voltage Drop
t
rr
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Reverse Recovery Time 300 ns VGS = 0V, ISD = 1A
with Temperature 0.7 1.0 %/°CVGS =10V, ID = 1A,
DS(ON)
TO-243AA 2.0 V
A
ns
V
=0V, VDS = Max Rating
GS
= 0V, VDS = 0.8 Max Rating
V
GS
T
= 125°C
A
= 5V, VDS = 20V
GS
= 10V, VDS = 20V
GS
= 5V, ID = 250mA
GS
Ω
= 10V, ID = 1A
GS
= 10V, ID = 1A
GS
Ω
VGS = 0V, VDS = 20V
f = 1 MHz
V
= 20V, ID = 1A
DD
R
= 25Ω
GEN
= 0V, ISD = 0.5A
GS
Switching Waveforms and Test Circuit
INPUT
OUTPUT
10V
V
10%
0V
DD
0V
t
d(ON)
t
(ON)
10%
90%
t
r
90%
t
d(OFF)
t
(OFF)
t
F
90%
10%
7-32
PULSE
GENERATOR
R
gen
INPUT
V
DD
R
L
OUTPUT
D.U.T.
Page 3
Typical Performance Curves
TN0104
Output Characteristics
3.75
3.0
2.25
(amperes)
1.5
D
I
0.75
0
0102030 5040
VDS(volts)
Transconductance vs. Drain Current
0.75
VDS= -25VVDS= 25V
0.60
VGS = 10V
8V
6V
4V
2V
T = -55AC°
Saturation Characteristics
3.75
3.0
2.25
1.5
(amperes)
D
I
0.75
0
0246 108
VDS(volts)
Power Dissipation vs. Case Temperature
5
4
VGS = 10V
8V
6V
4V
2V
7
0.45
(siemens)
0.30
FS
G
0.15
0
0 2.50.5 1.0 1.5 2.0
ID(amperes)
Maximum Rated Safe Operating Area
10
TO-39 (DC)
1.0
TO-92 (DC)
TO-243AA (DC)
(TA = 25°C)
(amperes)
D
I
0.1
T = 25
A
TA= 125 C°
C°
D
P (watts)
3
2
1
0
TO-243AA
(TA = 25°C)
TO-92
0 15010050
1257525
TCC)°(
Thermal Response Characteristics
1.0
TO-243AA
0.8
0.6
0.4
TA = 25°C
PD = 1.6W
0.01
0.1 100101
VDS(volts)
7-33
0.2
Thermal Resistance (normalized)
0
0.001 100.01 0.1 1
tp(seconds)
TO-92
PD = 1W
TC = 25°C
Page 4
Typical Performance Curves
BV
Variation with Temperature
DSS
1.3
1.2
TN0104
On-Resistance vs. Drain Current
10
VGS= 5V
8
1.1
1.0
DSS
BV (normalized)
0.9
0.8
-50 0 50 100 150
C)°(T
j
Transfer Characteristics
3.0
2.4
1.8
(amperes)
D
1.2
I
0.6
T
V
= 25V
DS
A
= -55
°
C
25
°
125
6
(ohms)
R
DS(ON)
VGS= 10V
@ 5V, 0.25A
1.4
1.2
1.0
0.8
0.6
DS(ON)
R (normalized)
4
DS(ON)
R
2
0
02
V
and R Variation with Temperature
DS(th)
1.4
(amperes)
I
D
1
C
1.2
°
C
1.0
0.8
V
GS(th)
V (normalized)
0.6
@ 0.5mA
(th)
0
0246810
(volts)
V
GS
Capacitance vs. Drain-to-Source Voltage
100
f = 1MHz
75
C
50
C (picofarads)
25
0
0 10203040
C
OSS
C
VDS(volts)
ISS
RSS
0.4
-50 0 50 100 150
T
C)°(
j
Gate Drive Dynamic Characteristics
10
VDS= 10V
8
55pF
6
(volts)
GS
4
V
2
0
0.5 0.65 0.8 0.95 1.1 1.25
50pF
Q (nanocoulombs)
G
0.4
40V
7-34
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