Datasheet tn0104 Datasheet

Supertex inc.

N-Channel Enhancement-Mode Vertical DMOS FET

TN0104

Features

► Low threshold (1.6V max.) ► High input impedance ► Low input capacitance ► Fast switching speeds ► Low on-resistance ► Free from secondary breakdown ► Low input and output leakage

General Description

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature

coefcient inherent in MOS devices. Characteristic of all MOS

structures, this device is free from thermal runaway and thermallyinduced secondary breakdown.

Applications

► Logic level interfaces – ideal for TTL and CMOS ► Solid state relays ► Battery operated systems ► Photo voltaic drives ► Analog switches ► General purpose line drivers ► Telecom switches

Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Ordering Information

Package Options Wafer / Die Options

Device

TO-92 TO-243AA (SOT-89)

TN0104 TN0104N3-G TN0104N8-G TN1504NW TN1504NJ TN1504ND

For packaged products, -G indicates package is RoHS compliant (‘Green’). Devices in Wafer / Die form are RoHS compliant (‘Green’).

Refer to Die Specication VF15 for layout and dimensions.

NW

(Die in wafer form)

(Die on adhesive tape)ND(Die in wafe pack)

NJ

Product Summary

R

Device

BV

DSS

/BV

(V)

DGS

DS(ON)

(max)

(Ω)

TN0104N3-G 40 1.8 2.0 1.6

TN0104N8-G 40 2.0 2.0 1.6

I

D(ON)

(min)

(A)

V

GS(th)

(max)

(V)

Absolute Maximum Ratings

Parameter Value

Drain-to-source voltage BV

Drain-to-gate voltage BV

Gate-to-source voltage ±20V

Operating and storage temperature -55OC to +150OC

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground.

Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

DSS

DGS

Pin Congurations

DRAIN

SOURCE

TO-92 (N3)

GATE

TO-243AA (SOT-89) (N8)

GATE

Product Marking

SiTN

0104

YYWW

Package may or may not include the following marks: Si or

TN1LW

Package may or may not include the following marks: Si or

YY = Year Sealed WW = Week Sealed = “Green” Packaging

TO-92 (N3)

W = Code for Week Sealed = “Green” Packaging

TO-243AA (SOT-89) (N8)

SOURCE

DRAIN

Thermal Characteristics

I

D

Package

(continuous)

(mA)

†

TO-92 450 2.40 1.0 125 170 450 2.40

TO-243AA (SOT-89) 630 2.90 1.6

Notes:

† I

(continuous) is limited by max rated Tj .

D

‡ T

= 25°C. Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Signicant PD increase possible on ceramic substrate.

A

I

D

(pulsed)

(A)

Power Dissipation

@TC = 25OC

(W)

‡

(OC/W)

θ

jc

θ

(OC/W)

15 78

TN0104

†

ja

‡

I

DR

(mA)

630 2.90

I

DRM

(A)

Electrical Characteristics (T

= 25OC unless otherwise specied)

A

Sym Parameter Min Typ Max Units Conditions

BV

V

ΔV

I

GS(th)

I

GSS

I

DSS

D(ON)

Drain-to-source breakdown voltage 40 - - V VGS = 0V, ID = 1.0mA

DSS

Gate threshold voltage 0.6 - 1.6 V VGS = VDS, ID= 500µA

Change in V

with temperature - -3.8 -5.0 mV/OC VGS = VDS, ID= 1.0mA

GS(th)

Gate body leakage - 0.1 100 nA VGS = ± 20V, VDS = 0V

= 0V, VDS = Max Rating

V

GS

V

= 0.8 Max Rating,

DS

VGS = 0V, TA = 125°C

VGS = 3.0V, VDS = 20V

Zero gate voltage drain current

On-state drain current

- - 1.0 µA

- - 100

- 0.35 -

0.5 1.1 - VGS = 5.0V, VDS = 20V

A

2.0 2.6 - VGS = 10V, VDS = 20V

- 5.0 -

VGS = 3.0V, ID = 50mA

Both packages

R

DS(ON)

Static drain-to-source on-state resistance

TO-92 - 1.5 1.8

- 2.3 2.5 VGS = 5.0V, ID = 250mA

Ω

VGS = 10V, ID = 1.0A

TO-243AA - - 2.0

ΔR

DS(ON)

G

C

OSS

C

RSS

t

d(ON)

t

d(OFF)

t

V

Change in R

Forward transductance 340 450 - mmho VDS = 20V, ID = 500mA

FS

Input capacitance - - 70

ISS

Common source output capacitance - - 50

Reverse transfer capacitance - - 15

with temperature - 0.7 1.0 %/OC VGS = 10V, ID = 1.0A

DS(ON)

VGS = 0V,

pF

VDS = 20V, f = 1.0MHz

Turn-on delay time - 3.0 5.0

Rise time - 7.0 8.0

r

Turn-off delay time - 6.0 9.0

Fall time - 5.0 8.0

f

Diode forward voltage

SD

drop

TO-92 - 1.2 1.8

TO-243AA - - 2.0 VGS = 0V, ISD = 0.5A

VDD = 20V, ID = 1.0A,

ns

R

GEN

VGS = 0V, ISD = 1.0A

V

= 25Ω

t

Notes:

1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

Reverse recovery time - 300 - ns VGS = 0V, ISD = 1.0A

rr

Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

2

Switching Waveforms and Test Circuit

INPUT

10V

0V

10%

t

d(ON)

t

(ON)

t

r

90%

t

d(OFF)

t

(OFF)

t

f

Pulse

Generator

R

GEN

TN0104

V

DD

R

L

OUTPUT

VDD

0V

10%

90%

10%

INPUT

D.U.T.

Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

3

Typical Performance Curves

TN0104

3.75

3.00

2.25

1.50

(amperes)

D

I

0.75

0

0 10 20 30 40

0.75

0.60

0.45

Output Characteristics

V

(volts)

DS

Transconductance vs. Drain Current

V

= 25V

DS

V

= 10V

GS

TA = -55OC

= 25OC

T

A

8V

6V

4V

2V

3.75

3.00

2.25

(amperes)

1.50

D

I

0.75

0

0 2 4 6 8 10

Power Dissipation vs. Case Temperature

5

4

3

Saturation Characteristics

V

(volts)

DS

(T

= 25OC)

A

V

GS

8V

= 10V

6V

4V

2V

(siemens)

0.30

FS

G

0.15

0

0 0.5 1.0 1.5 2.0 2.5

ID (amperes)

Maximum Rated Safe Operating Area

10

TO-92 (DC)

0.0

TO-243AA (DC)

(amperes)

D

I

0.1

(TA = 25OC)

0.01

0.1 1.0 10 100

V

(volts)

DS

T

= 125OC

A

(watts)

D

P

2

TO-243AA

TO-92

1

0

0 25 50 75 100 125 150

TC (OC)

Thermal Response Characteristics

1.0

0.8

TO-243AA

= 1.6W

P

0.6

0.4

0.2

Thermal Resistance (normalized)

0

0.001 0.01 0.1 1.0 10

D

T

A

= 25OC

TO-92 P

D

T

C

tP (seconds)

= 1.0W = 25OC

Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

4

Typical Performance Curves (cont.)

BV

Variation with Temperature

1.3

DSS

On-Resistance vs. Drain Current

10

V

GS

= 5.0V

TN0104

1.2

1.1

(normalized)

1.0

DSS

BV

0.9

0.8

-50 0 50 100 150

Tj (OC)

3.0

2.4

1.8

(amperes)

1.2

D

I

0.6

Transfer Characteristics

V

= 25V

DS

T

= -55

A

O

C

25

125

8

6

(Ω)

V

DS(ON)

R

4

2

0

0 1 2

GS

= 10V

ID (amperes)

V

and R

(th)

1.4

O

C

O

C

1.2

1.0

(normalized)

0.8

GS(th)

V

0.6

(th)

Variation with Temperature

DS

R

@ 5.0V, 0.25A

DS(ON)

@ 0.5mA

1.4

1.2

1.0

0.8

0.6

(normalized)

DS(ON)

R

0

0 2 4 6 8 10

V

(volts)

GS

Capacitance vs. Drain-to-Source Voltage

100

f = 1MHz

75

C

50

C (picofarads)

25

C

0

0 10 20 30 40

V

(volts)

DS

C

ISS

OSS

RSS

0.4

-50 0 50 100 150

Tj (OC)

Gate Drive Dynamic Characteristics

10

V

= 10V

DS

8

6

55pF

(volts)

GS

4

V

2

0

0.50 0.65 0.80 0.95 1.10 1.25

50pF

QG (nanocoulombs)

Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

5

0.4

40V

3-Lead TO-92 Package Outline (N3)

D

Seating Plane

1 2 3

L

TN0104

A

Front View

E1

1

Bottom View

Symbol A b c D E E1 e e1 L

MIN .170 .014

Dimensions

(inches)

NOM - - - - - - - - -

MAX .210 .022

JEDEC Registration TO-92.

* This dimension is not specied in the JEDEC drawing.

† This dimension differs from the JEDEC drawing.

Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009.

†

e1

2

b

c

e

Side View

E

3

†

.014

.022

.175 .125 .080 .095 .045 .500

†

.205 .165 .105 .105 .055 .610*

Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com

6

Supertex inc.

94089

.supertex.com

3-Lead TO-243AA (SOT-89) Package Outline (N8)

D

D1

H

E

E1

C

TN0104

L

12 3

b

e

e1

Top View

b1

A

Side View

Symbol A b b1 C D D1 E E1 e e1 H L

†

1.50 BSC

3.00

BSC

Dimensions

(mm)

MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.00

NOM - - - - - - - - - -

MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 4.25 1.20

JEDEC Registration TO-243, Variation AA, Issue C, July 1986.

† This dimension differs from the JEDEC drawing Drawings not to scale. Supertex Doc. #: DSPD-3TO243AAN8, Version F111010.

3.94 0.73

†

(The package drawing(s) in this data sheet may not reect the most current specications. For the latest package outline

information go to http://www.supertex.com/packaging.html.)

Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives

an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)

1235 Bordeaux Drive, Sunnyvale, CA

Doc.# DSFP-TN0104 B042711

7

Tel: 408-222-8888

www