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®
FEATURES
VBO: 32V
■
Low breakover current: 15µA max
■
Breakover voltage range: 30 to 34V
■
DESCRIPTION
Functioningasatriggerdiodewithafixed voltage
reference, the TMMDB3TG can be used in conjunction with triacs for simplified gate control circuits or as a starting element in fluorescent lamp
ballasts.
TMMDB3TG
DIAC
MINIMELF
ABSOLUTE MAXIMUM RATINGS (limiting values)
Symbol Parameter Value Unit
I
TRM
Repetitive peak on-state current
2A
tp=20µs F= 120 Hz
Tstg
Tj
Storage temperature range
Operating junction temperature range
-40to+125 °C
January 2001 - Ed: 2
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TMMDB3TG
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)
Symbol Parameter Test Conditions Value Unit
V
BO
IV
BO1-VBO2
∆ V Dynamic breakover
V
O
I
BO
tr Rise time * see diagram 3 MAX. 2 µs
I
R
* Applicable to both forward and reverse directions.
** Connected in parallel to the device.
ORDERING INFORMATION
Breakover voltage * C = 22nF ** MIN. 30 V
I Breakover voltage
symmetry
voltage *
Output voltage * see diagram 2
Breakover current * C = 22nF ** MAX. 15 µA
Leakage current * VR= 0.5 VBOmax MAX. 10 µA
TMM DB 3 TG
TYP. 32
MAX. 34
C = 22nF ** MAX. ± 2 V
V
BO
10mA
(R=20Ω)
and VFat
MIN. 9 V
MIN. 5 V
MINIMELF
Special V rangeBO
Diac Series
Breakover voltage
3:V typ = 32V
BO
OTHER INFORMATION
Part Number Marking Weight Base Quantity Packing Mode
TMMDB3TG (None)
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0.04 g 2500 Tape & Reel
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TMMDB3TG
Diagram 1: Voltage - current characteristic curve.
+I
F
10mA
I
BO
I
-V +V
R
0,5 V
BO
V
-I
V
F
F
V
BO
Diagram 2: Test circuit.
D.U.T
Rs=0
Vo
R=20 Ω
220V
50 Hz
500 kΩ10 kΩ
C=0.1µF
Diagram 3: Rise time measurement.
l
p
90 %
10 %
t
r
I
P
T410
Fig. 1: Relative variation of VBO versus junction
temperature (typical values)
VBO [Tj]
VBO [Tj = 25°C]
1.08
1.06
1.04
1.02
1.00
25 50 75 100 125
Tj (°C)
Fig. 2: Repetitive peak pulse current versus pulse
duration (maximum values).
ITRM(A)
20.0
10.0
1.0
tp(µs)
0.1
1 10 100
F=120Hz
Tj initial=25°C
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Fig. 3: Time duration while current pulse is higher
50mA versus C and Rs (typical values).
tp(µs)
40
35
30
25
Tj=25°C
33Ω
47Ω
Ω
68
20
15
10
5
0
10 20 50 100 200 500
0Ω
10Ω
22Ω
C(nF)
PACKAGE MECHANICAL DATA (in millimeters)
MINIMELF
TMMDB3TG
E
C
FOOTPRINT
O
0.05
O
/
2.5
A
F
REF. DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
B
/
O
D
/
E-F
C
A 3.30 3.40 3.6 0.130 0.134 0.142
B 1.59 1.60 1.62 0.063 0.063 0.064
C 0.40 0.45 0.50 0.016 0.018 0.020
D 1.50 0.059
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5
Informationfurnished is believed to be accurate andreliable.However, STMicroelectronics assumes no responsibility for theconsequences of
useof such information nor for anyinfringement of patents or other rightsof third parties which may resultfromits use. No license is grantedby
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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