Datasheet TMMBAT48, TMMBAT47 Datasheet (SGS Thomson Microelectronics)

Page 1
TMMBAT 47
®
SMALL SIGNAL SCHOTTKY DIODES
DESCRIPTION
General purpose, metal to silicon diodes featuring very low turn-on voltage and fast switching.
These devices have integrated protection against excessive voltage such as electrostatic discharges.
ABSOLUTE RATINGS
(limiting values)
TMMBAT 48
MINIMELF
(Glass)
Symbol Parameter TMMBAT47 TMMBAT48 Unit
V
RRM
I
F
I
FRM
I
FSM
P
tot
T
stg
T
j
T
L
Repetitive Peak Reverse Voltage 20 40 V Forward Continuous Current Repetitive Peak Fordward Current tp ≤ 1s
Surge non Repetitive Forward Current tp = 10ms 7.5 A
Power Dissipation Storage and Junction Temperature Range - 65 to 150
Maximum Temperature for Soldering during 15s 260
= 25
T
δ ≤
t T
C
°
l
0.5
= 1s 1.5
p
= 25 °C
l
350 mA
1A
330 mW
- 65 to 125
THERMAL RESIS TANCE
Symbol Test Conditions Value Unit
R
th(j-l)
Junction-leads 300
° °
°
C/W
°
C C
C
1/5
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TMMBAT 47/TMMBAT 48
ELECTRICAL CHARACT E RISTI CS
STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
V
BR
V
*
F
I
*
R
Tj = 25°CI T
= 25°CI
j
= 25°C
T
j
T
= 25°C
j
T
= 25°C
j
T
= 25°C
j
T
= 25°C
j
T
= 25°C
j
= 25°C
T
j
T
= 25°C
j
T
= 25°C
j
= 25°C
T
j
T
= 60°C
j
T
= 25°C
j
= 60°C
T
j
T
= 25°C
j
T
= 60°C
j
T
= 25°C
j
T
= 60°C
j
T
= 25°C
j
= 60°C
T
j
T
= 25°C
j
T
= 60°C
j
= 10µA
R
= 25µA
R
I
= 0.1mA All Types 0.25 V
F
I
= 1mA 0.3
F
I
= 10mA 0.4
F
I
= 30mA TMMBAT47 0.5
F
I
= 150mA 0.8
F
I
= 300mA 1
F
I
= 50mA TMMBAT48 0.5
F
I
= 200mA 0.75
F
I
= 500mA 0.9
F
V
= 1.5V All Types 1
R
V
= 10V TMMBAT47 4
R
V
= 20V 10
R
V
= 10V TMMBAT48 2
R
V
= 20V 5
R
V
= 40V 25
R
TMMBA T47 20 V TMMBA T48 40
10
20
30
15
25
50
A
µ
DYNAMIC CHARACTERISTIC S
Symbol Test Conditions Min. Typ. Max. Unit
C
t
rr
* Pulse test: t
2/5
= 25°CV
T
j
T
= 25°CV
j
= 0V
R
= 1V
R
Tj = 25°C IF = 10mA VR = 1V irr = 1mA RL = 100
300µs δ < 2%
p
.
f = 1MHz 20 pF
12
10 ns
Page 3
TMMBAT 47/TMMBAT 48
Figure 1. Forward current versus forward voltage at different temperatures (typical values).
Figure 2. Forward current versus forward voltage (typical values).
Figure 3. Reverse current versus junction temperature.
Figure 4. Rever se current versus continuous reverse voltage (typical values).
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Page 4
TMMBAT 47/TMMBAT 48
Figure 5. Capacitance C versus reverse applied voltage V
(typical values).
R
4/5
Page 5
PACKAGE MECH ANICAL DATA
MINIMELF Glass
TMMBAT 47/TMMBAT 48
A
C
C
FOOT PRINT DIMENSIONS (Millimeter)
2.5
5
DIMENSIONS
REF.
Millimeters Inches
Min. T yp. Max. Min. Typ. Max.
B
/
O
A 3.30 3.40 3.6 0.130 0.134 0.142 B 1.59 1.60 1.62 0.063 0.063 0.064 C 0.40 0.4 5 0.50 0.016 0.018 0.020 D 1.50 0.059
2
Marking: ring at cathode end. Weight: 0.05g
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