Page 1
TM90RZ/EZ-M,-H
MITSUBISHI THYRISTOR MODULES
TM90RZ/EZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
• IT (AV) Average on-state current ............ 90A
• I
F (AV) Average forward current ............ 90A
• V
RRM Repetitive peak reverse voltage
........ 400/800V
• V
DRM Repetitive peak off-state voltage
........ 400/800V
• MIX DOUBLE ARMS
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
DC motor control, NC equipment, AC motor control, contactless switches,
electric furnace temperature control, light dimmers
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
93.5
17.5
80
20 20
LABEL
K1 G1
3–M5
2–φ6.5
12.5
Tab#110, t=0.5
6.5
(RZ)
26
(EZ)
9
30
21
CR
A
1K2
A1
CR
K
1
1K2
K
SR
SR
A2
A
K1 G1
2
K1 G1
Feb.1999
Page 2
ABSOLUTE MAXIMUM RATINGS
Symbol
RRM
V
VRSM
VR (DC)
VDRM
VDSM
VD (DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Parameter
M
400
480
320
400
480
320
Voltage class
MITSUBISHI THYRISTOR MODULES
TM90RZ/EZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
H
800
960
640
800
960
640
Unit
V
V
V
V
V
V
for fusing
Parameter
Conditions
Single-phase, half-wave 180° conduction, T
One half cycle at 60Hz, peak value
Value for one cycle of surge current
D=1/2VDRM, IG=1.0A, Tj=125°C
V
Charged part to case
C=86°C
Symbol
IT (RMS), IF (RMS)
I
T (AV)
, I
F (AV)
ITSM, IFSM
2
t
I
di/dt
GM
P
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
Viso
RMS current
Average current
Surge (non-repetitive) current
2
t
I
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
Main terminal screw M5
—
Mounting torque
Mounting screw M6
—
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol
I
RRM
IDRM
VTM, VFM
dv/dt
GT
V
VGD
IGT
Rth (j-c)
Rth (c-f)
Repetitive peak reverse current
Repetitive peak off-state current
Forward voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
—
Insulation resistance
Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.
Parameter
Test conditions
j=125°C, VRRM applied
T
j=125°C, VDRM applied
T
j=125°C, ITM=IFM=270A, instantaneous meas.
T
j=125°C, VD=2/3VDRM
T
Tj=25°C, VD=6V, RL=2Ω
j=125°C, VD=1/2VDRM
T
Tj=25°C, VD=6V, RL=2Ω
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Min.
—
—
—
500
—
0.25
15
—
—
10
Ratings
140
90
1800
1.4 × 10
100
5.0
0.5
10
5.0
2.0
–40~125
–40~125
2500
1.47~1.96
15~20
1.96~2.94
20~30
160
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
Unit
A
A
A
4
2
s
A
A/µs
W
W
V
V
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Max.
15
15
1.3
—
3.0
—
100
0.3
0.2
—
Unit
mA
mA
V
V/µs
V
V
mA
°C/W
°C/W
MΩ
Feb.1999
Page 3
MAXIMUM RATINGS
Item
Thyristor
Diode
VRRM VRSM VR (DC) VDRM
MITSUBISHI THYRISTOR MODULES
TM90RZ/EZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
T (RMS)
V
DSM
—
—
V
D (DC)
I
IF (RMS)
—
IT (AV)
IF (AV)
ITSM
IFSM
2
t
I
di/dt
—
PG
(AV)
—
—
Thyristor
Diode
Item
PGM
ELECTRICAL CHARACTERISTICS
Item
Thyristor
Diode
IRRM IDRM
—
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC RATED SURGE (NON-REPETITIVE)
3
10
7
Tj=125°C
5
3
2
2
10
7
5
3
2
1
CURRENT (A)GATE VOLTAGE (V)
10
7
5
3
2
0
10
0.8 1.2 2.0 2.41.6
0.4
V
V
VFM
FGM
—
TM
I
FGM
—
dv/dt
—
T
j Tstg
V
GT
—
V
GD
—
IGT
—
R
th (j-c)
CURRENT
2000
1600
1200
800
CURRENT (A)
400
SURGE (NON-REPETITIVE)
0
CONDUCTION TIME (CYCLE AT 60Hz)FORWARD VOLTAGE (V)
Rth (c-f)
101 100
705030207532
10
10
10
GATE CHARACTERISTICS MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
4
3
2
1
7
VGT=3.0V
5
3
2
IGT=
0
100mA
7
5
Tj=25°C
3
2
–1
7
5
4
1
10
VFGM=10V
VGD=0.25V
10
2
PG(AV)=
0.50W
10
PGM=5.0W
IFGM=2.0A
3
0
10
0.40
0.35
0.30
0.25
0.20
(°C/W)
0.15
0.10
0.05
TRANSIENT THERMAL IMPEDANCE
0
4
10
753275327532
10
–3
7532
10
10
1
–2
GATE CURRENT (mA) TIME (s)
10
–1
0
10
753275327532
Feb.1999
Page 4
MITSUBISHI THYRISTOR MODULES
TM90RZ/EZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
MAXIMUM AVERAGE POWER
DISSIPATION (SINGLE PHASE HALFWAVE)
160
140
120
100
θ
360°
RESISTIVE,
INDUCTIVE LOAD
PER SINGLE ELEMENT
80
60
θ=30°
60°
120°
90°
40
20
AVERAGE POWER DISSIPATION (W)
0
0 10080
20 40 60
MAXIMUM AVERAGE
POWER DISSIPATION
160
140
120
100
80
60
40
20
AVERAGE POWER DISSIPATION (W)
0
(RECTANGULAR WAVE)
90°
60°
θ=30°
0 16020
270°
180°
120°
θ
360°
RESISTIVE,
RESISTIVE,
INDUCTIVE LOAD
INDUCTIVE LOAD
PER SINGLE ELEMENT
PER SINGLE ELEMENT
8040 60
100 120 140
AVERAGE CURRENT (A) AVERAGE CURRENT (A)
180°
DC
LIMITING VALUE OF THE AVERAGE
CURRENT (SINGLE PHASE HALFWAVE)
130
120
110
100
90
80
70
CASE TEMPERATURE (°C)CASE TEMPERATURE (°C)CASE TEMPERATURE (°C)
θ=30° 60° 90°
60
50
0 60 10020
40 80
AVERAGE CURRENT (A)AVERAGE CURRENT (A)
LIMITING VALUE OF THE AVERAGE
CURRENT (RECTANGULAR WAVE)
130
120
110
100
90
80
70
θ=30° 60° DC270°
60
50
0 16020 8040 60 100 120 140
120°
180°90°
θ
360°
RESISTIVE,
INDUCTIVE LOAD
PER SINGLE
ELEMENT
120° 180°
θ
360°
RESISTIVE,
INDUCTIVE LOAD
PER SINGLE
ELEMENT
MAXIMUM AVERAGE POWER DISSIPATION
(REVERSE-PARALLEL CONNECTION,
THREE-PHASE THREE-LINE CONNECTION)
200
160
RESISTIVE,
RESISTIVE,
RESISTIVE,
INDUCTIVE LOAD
INDUCTIVE LOAD
INDUCTIVE LOAD
120
PER SINGLE MODULE
PER SINGLE MODULE
PER SINGLE MODULE
θ
360°
θ
θ=180°
80
40
AVERAGE POWER DISSIPATION (W)
0
0 20040
80 120 160
120°
90°
60°
30°
LIMITING VALUE OF THE RMS CURRENT
(REVERSE-PARALLEL CONNECTION,
THREE-PHASE THREE-LINE CONNECTION)
130
120
θ=30°
110
100
90
RESISTIVE,
RESISTIVE,
RESISTIVE,
INDUCTIVE LOAD
INDUCTIVE LOAD
INDUCTIVE LOAD
PER SINGLE MODULE
PER SINGLE MODULE
PER SINGLE MODULE
80
0 20040
θ
θ
360°
80
60°
90°
120°
120 160
180°
RMS CURRENT (A)RMS CURRENT (A)
Feb.1999
Page 5
MITSUBISHI THYRISTOR MODULES
TM90RZ/EZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
MAXIMUM POWER DISSIPATION
(SINGLE PHASE FULLWAVE RECTIFIED)
320
280
240
200
160
120
80
(PER SINGLE MODULE)
POWER DISSIPATION (W)
θ
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
θ=30°
60°
90°
40
0
0 200
12040 80 160
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
MAXIMUM POWER DISSIPATION
(THREE-PHASE FULLWAVE RECTIFIED)
200
90°
160
60°
θ=30°
120
80
(PER SINGLE MODULE)
40
POWER DISSIPATION (W)
0
0 32016080
40 280120 200
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
120°
120°
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
240
180°
LIMITING VALUE OF
THE DC OUTPUT CURRENT
(SINGLE PHASE FULLWAVE RECTIFIED)
130
120
110
100
(PER SINGLE MODULE)
90
CASE TEMPERATURE (°C)
80
θ=30° 60° 180°90°
0 20040 12080 160
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
LIMITING VALUE OF THE DC
OUTPUT CURRENT
(THREE-PHASE FULLWAVE RECTIFIED)
130
120
110
100
90
80
70
(PER SINGLE MODULE)
CASE TEMPERATURE (°C)
90°θ=30° 60°
60
50
0 32016080
40 280120 200
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
RESISTIVE,
INDUCTIVE
LOAD
120°
θ
360°
RESISTIVE,
INDUCTIVE
120°
240
θ
360°
LOAD
θ
Feb.1999
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