Page 1
TM90DZ/CZ-M,-H
MITSUBISHI THYRISTOR MODULES
TM90DZ/CZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
• IT (AV) Average on-state current ............ 90A
• V
RRM Repetitive peak reverse voltage
........ 400/800V
• V
DRM Repetitive peak off-state voltage
........ 400/800V
• DOUBLE ARMS
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
DC motor control, NC equipment, AC motor control, Contactless switches,
Electric furnace temperature control, Light dimmers
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
17.5
93.5
80
20 20
K2 G2
K1 G1
3–M5
2–φ6.5
12.5
Tab#110,
t=0.5
9
26
(DZ)
(CZ)
K2G
2
CR
1
1K2
A
A
1
CR
K
1
1
K1K
2
CR
A
2
K1G
2
CR
1
K2G
2
A
2
K1G
1
2
LABEL
6.5
21
30
Feb.1999
Page 2
ABSOLUTE MAXIMUM RATINGS
Symbol
RRM
V
VRSM
VR (DC)
VDRM
VDSM
VD (DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Parameter
M
400
480
320
400
480
320
Voltage class
MITSUBISHI THYRISTOR MODULES
TM90DZ/CZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
H
800
960
640
800
960
640
Unit
V
V
V
V
V
V
Symbol
T (RMS)
I
IT (AV)
ITSM
2
t
I
di/dt
GM
P
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
Viso
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
2
t
I
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Weight
Parameter
for fusing
ELECTRICAL CHARACTERISTICS
Symbol
I
RRM
IDRM
VTM
dv/dt
GT
V
VGD
IGT
Rth (j-c)
Rth (c-f)
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
—
Insulation resistance
Parameter
Conditions
Single-phase, half-wave 180° conduction, T
C=86°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
D=1/2VDRM, IG=1.0A, Tj=125°C
V
Charged part to case
Main terminal screw M5
Mounting screw M6
Typical value
Test conditions
j=125°C, VRRM applied
T
j=125°C, VDRM applied
T
j=125°C, ITM=270A, instantaneous meas.
T
j=125°C, VD=2/3VDRM
T
Tj=25°C, VD=6V, RL=2Ω
j=125°C, VD=1/2VDRM
T
Tj=25°C, VD=6V, RL=2Ω
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Min.
—
—
—
500
—
0.25
15
—
—
10
Ratings
140
90
1800
1.4 × 10
100
5.0
0.5
10
5.0
2.0
–40~+125
–40~+125
2500
1.47~1.96
15~20
1.96~2.94
20~30
160
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
Unit
A
A
A
4
2
s
A
A/µs
W
W
V
V
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Max.
15
15
1.3
—
3.0
—
100
0.3
0.2
—
Unit
mA
mA
V
V/µs
V
V
mA
°C/W
°C/W
MΩ
Feb.1999
Page 3
PERFORMANCE CURVES
MITSUBISHI THYRISTOR MODULES
TM90DZ/CZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
MAXIMUM ON-STATE CHARACTERISTIC
3
10
7
5
Tj=125°C
3
2
2
10
7
5
3
2
1
10
7
5
ON-STATE CURRENT (A)
3
2
0
10
0.4
0.8 1.2 2.0 2.41.6
ON-STATE VOLTAGE (V) CONDUCTION TIME
GATE CHARACTERISTICS MAXIMUM TRANSIENT THERMAL
4
3
V
FGM
VGT=3.0V
IGT=
100mA
Tj=25°C
1
=10V
0.50W
VGD=0.25V
2
10
P
G(AV)
=
10
10
10
GATE VOLTAGE (V)
10
2
1
7
5
3
2
0
7
5
3
2
–1
7
5
4
10
PGM=5.0W
=2.0A
FGM
I
3
RATED SURGE (NON-REPETITIVE)
ON-STATE CURRENT
2000
1600
1200
800
ON-STATE CURRENT (A)
400
SURGE (NON-REPETITIVE)
0
101 100
705030207532
(CYCLES AT 60Hz)
IMPEDANCE (JUNCTION TO CASE)
0.40
10
0
1
10
7532
0.35
0.30
0.25
0.20
(°C/W)
0.15
0.10
0.05
TRANSIENT THERMAL IMPEDANCE
0
4
753275327532
10
10
–3
10
–2
10
–1
0
10
753275327532
TIME (s)GATE CURRENT (mA)
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(SINGLE PHASE HALFWAVE)
160
140
120
100
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
80
60
DISSIPATION (W)
40
AVERAGE ON-STATE POWER
20
0
0 10080
θ=30°
20 40 60
AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A)
90°
60°
PER SINGLE
ELEMENT
120°
180°
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(SINGLE PHASE HALFWAVE)
130
120
110
100
PER SINGLE
ELEMENT
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
90
80
70
CASE TEMPERATURE (°C)
60
50
0 60 10020
θ=30° 60° 90°
40 80
120° 180°
Feb.1999
Page 4
MITSUBISHI THYRISTOR MODULES
TM90DZ/CZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
160
140
120
100
80
60
DISSIPATION (W)
40
AVERAGE ON-STATE POWER
20
0
0 16020
200
180
160
140
120
100
80
60
AVERAGE ON-STATE
40
POWER DISSIPATION (W)
20
0
0 20040
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(RECTANGULAR WAVE)
DC
270°
180°
120°
90°
60°
θ=30°
θ
360°
8040 60
100 120 140
PER SINGLE
MODULE
120 160
RESISTIVE,
INDUCTIVE
LOAD
120°
θ=180°
90°
60°
30°
PER SINGLE
ELEMENT
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(SINGLE PHASE FULLWAVE AC)
θ
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
80
RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A)
CASE TEMPERATURE (°C)CASE TEMPERATURE (°C)
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
130
120
110
100
90
80
70
60
50
130
125
120
115
110
105
100
95
90
85
80
(RECTANGULAR WAVE)
PER SINGLE
ELEMENT
θ=30° 60° DC270°
0 16020 8040 60 100 120 140
AVERAGE ON-STATE CURRENT (A)AVERAGE ON-STATE CURRENT (A)
LIMITING VALUE OF THE RMS
ON-STATE CURRENT
(SINGLE PHASE FULLWAVE AC)
θ
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
0 20040
120°
80
180°90°
θ=30°
PER SINGLE
MODULE
120 160
θ
RESISTIVE,
INDUCTIVE
LOAD
60°
360°
90°
120°
180°
MAXIMUM ON-STATE POWER DISSIPATION
(SINGLE PHASE FULLWAVE RECTIFIED)
320
280
240
200
160
120
80
(PER SINGLE MODULE)
40
ON-STATE POWER DISSIPATION (W)
θ
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
θ=30°
0
0 200
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
90°
60°
12040 80 160
120°
180°
LIMITING VALUE OF THE DC
(SINGLE PHASE FULLWAVE RECTIFIED)
130
125
120
115
110
105
100
95
(PER SINGLE MODULE)
90
CASE TEMPERATURE (°C)
85
80
0 20040 120
OUTPUT CURRENT
θ=30° 60° 180°90°
80 160
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
120°
θ
Feb.1999
Page 5
MITSUBISHI THYRISTOR MODULES
TM90DZ/CZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
MAXIMUM ON-STATE POWER DISSIPATION
(THREE PHASE FULLWAVE RECTIFIED)
200
180
160
140
120
100
80
60
(PER SINGLE MODULE)
40
20
ON-STATE POWER DISSIPATION (W)
0
0 32016080
40 280120 200
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
60°
θ=30°
120°
90°
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
240
LIMITING VALUE OF THE DC
(THREE PHASE FULLWAVE RECTIFIED)
130
120
110
100
90
80
70
(PER SINGLE MODULE)
CASE TEMPERATURE (°C)
60
50
0 32016080
OUTPUT CURRENT
90°θ=30° 60°
40 280120 200
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
120°
240
Feb.1999
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