Page 1
TM55RZ/EZ-24,-2H
MITSUBISHI THYRISTOR MODULES
TM55RZ/EZ-24,-2H
HIGH VOLTAGE MEDIUM POWER GENERAL USE
INSULATED TYPE
• IT (AV) Average on-state current ............ 55A
• I
F (AV) Average forward current ............ 55A
• V
RRM Repetitive peak reverse voltage
.... 1200/1600V
• V
DRM Repetitive peak off-state voltage
.... 1200/1600V
• MIX DOUBLE ARMS
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
DC motor control, NC equipment, AC motor control, contactless switches,
electric furnace temperature control, light dimmers
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
93.5
16.5
80
23 23
LABEL
3–M5
2–φ6.5
13
K1 G1
Tab#110, t=0.5
6.5
(RZ)
26
(EZ)
9
30
21
CR
1K2
A
A1
CR
1
K
K
1K2
SR
SR
A2
A
K1 G1
2
K1 G1
Feb.1999
Page 2
ABSOLUTE MAXIMUM RATINGS
Symbol
RRM
V
VRSM
VR (DC)
VDRM
VDSM
VD (DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Parameter
24
1200
1350
960
1200
1350
960
MITSUBISHI THYRISTOR MODULES
TM55RZ/EZ-24,-2H
HIGH VOLTAGE MEDIUM POWER GENERAL USE
INSULATED TYPE
Voltage class
2H
1600
1700
1280
1600
1700
1280
Unit
V
V
V
V
V
V
for fusing
Parameter
Conditions
Single-phase, half-wave 180° conduction, T
One half cycle at 60Hz, peak value
Value for one cycle of surge current
D=1/2VDRM, IG=1.0A, Tj=125°C
V
Charged part to case
C=81°C
Symbol
IT (RMS), IF (RMS)
I
T (AV)
, I
F (AV)
ITSM, IFSM
2
t
I
di/dt
GM
P
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
Viso
RMS current
Average current
Surge (non-repetitive) current
2
t
I
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
Main terminal screw M5
—
Mounting torque
Mounting screw M6
—
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol
I
RRM
IDRM
VTM, VFM
dv/dt
GT
V
VGD
IGT
Rth (j-c)
Rth (c-f)
Repetitive peak reverse current
Repetitive peak off-state current
Forward voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
—
Insulation resistance
Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.
Parameter
Test conditions
j=125°C, VRRM applied
T
j=125°C, VDRM applied
T
j=125°C, ITM=IFM=165A, instantaneous meas.
T
j=125°C, VD=2/3VDRM
T
Tj=25°C, VD=6V, RL=2Ω
j=125°C, VD=1/2VDRM
T
Tj=25°C, VD=6V, RL=2Ω
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Min.
—
—
—
500
—
0.25
15
—
—
10
Ratings
86
55
1100
5.0 × 10
100
5.0
0.5
10
5.0
2.0
–40~125
–40~125
2500
1.47~1.96
15~20
1.96~2.94
20~30
160
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
Unit
A
A
A
3
2
s
A
A/µs
W
W
V
V
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Max.
10
10
1.5
—
2.0
—
100
0.5
0.2
—
Unit
mA
mA
V
V/µs
V
V
mA
°C/W
°C/W
MΩ
Feb.1999
Page 3
MAXIMUM RATINGS
Item
Thyristor
Diode
VRRM VRSM VR (DC) VDRM
MITSUBISHI THYRISTOR MODULES
TM55RZ/EZ-24,-2H
HIGH VOLTAGE MEDIUM POWER GENERAL USE
INSULATED TYPE
T (RMS)
V
DSM
—
—
V
D (DC)
I
IF (RMS)
—
IT (AV)
IF (AV)
ITSM
IFSM
2
t
I
di/dt
—
PG
(AV)
—
Thyristor
Diode
Item
PGM
—
ELECTRICAL CHARACTERISTICS
Item
Thyristor
Diode
IRRM IDRM
—
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC RATED SURGE (NON-REPETITIVE)
3
10
7
5
Tj=125°C
3
2
2
10
7
5
3
2
1
CURRENT (A)GATE VOLTAGE (V)
10
7
5
3
2
0
10
0.8 1.2 2.0 2.21.61.0 1.4 1.8
0.6
V
V
VFM
FGM
—
TM
I
FGM
—
dv/dt
—
T
j Tstg
V
GT
—
V
GD
—
IGT
—
R
th (j-c)
CURRENT
1200
1000
800
600
CURRENT (A)
400
SURGE (NON-REPETITIVE)
200
CONDUCTION TIME (CYCLE AT 60Hz)FORWARD VOLTAGE (V)
Rth (c-f)
101 100
705030207532
10
10
10
GATE CHARACTERISTICS MAXIMUM TRANSIENT THERMAL
4
3
2
1
7
VGT=3.0V
5
3
2
IGT=
0
100mA
7
5
Tj=25°C
3
2
–1
7
5
4
1
10
VFGM=10V
VGD=0.25V
10
2
PG(AV)=
0.50W
10
PGM=5.0W
IFGM=2.0A
3
IMPEDANCE (JUNCTION TO CASE)
0
10
0.8
0.7
0.6
0.5
0.4
(°C/W)
0.3
0.2
0.1
TRANSIENT THERMAL IMPEDANCE
0
4
10
753275327532
10
–3
7532
10
10
1
–2
GATE CURRENT (mA) TIME (s)
10
–1
0
10
753275327532
Feb.1999
Page 4
MITSUBISHI THYRISTOR MODULES
TM55RZ/EZ-24,-2H
HIGH VOLTAGE MEDIUM POWER GENERAL USE
INSULATED TYPE
MAXIMUM AVERAGE POWER
DISSIPATION (SINGLE PHASE HALFWAVE)
80
70
60
50
40
30
90°
60°
θ=30°
180°
120°
θ
360°
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE ELEMENT
20
10
AVERAGE POWER DISSIPATION (W)
0
0803010 50 70
20 40 60
MAXIMUM AVERAGE
POWER DISSIPATION
100
(RECTANGULAR WAVE)
270° DC
180°
80
120°
90°
60
40
20
AVERAGE POWER DISSIPATION (W)
0
0 10020
θ=30°
60°
40 60
θ
360°
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE ELEMENT
AVERAGE CURRENT (A) AVERAGE CURRENT (A)
80
LIMITING VALUE OF THE AVERAGE
CURRENT (SINGLE PHASE HALFWAVE)
130
120
110
100
RESISTIVE, INDUCTIVE
PER SINGLE ELEMENT
90
80
70
θ=30° 60°
120° 180°90°
CASE TEMPERATURE (°C)CASE TEMPERATURE (°C)CASE TEMPERATURE (°C)
60
50
0608010 20 50
30 40 70
AVERAGE CURRENT (A)AVERAGE CURRENT (A)
LIMITING VALUE OF THE AVERAGE
CURRENT (RECTANGULAR WAVE)
130
120
110
100
90
RESISTIVE, INDUCTIVE
80
70
θ=30° 60° DC270°
60
50
0 10020 8040 60
120°
180°90°
θ
360°
LOAD
θ
360°
LOAD
PER SINGLE
ELEMENT
MAXIMUM AVERAGE POWER DISSIPATION
(REVERSE-PARALLEL CONNECTION,
THREE-PHASE THREE-LINE CONNECTION)
160
140
120
RESISTIVE, INDUCTIVE
100
80
θ
360°
LOAD
PER SINGLE
MODULE
θ
120°
60
40
20
AVERAGE POWER DISSIPATION (W)
0
0 1604020
60
100 120 140
80
θ=180°
90°
60°
30°
LIMITING VALUE OF THE RMS CURRENT
(REVERSE-PARALLEL CONNECTION,
THREE-PHASE THREE-LINE CONNECTION)
130
120
110
100
90
80
70
60
50
0 1604020
θ
θ
360°
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE MODULE
60 80
θ=30°
60°
90°
120°
180°
100 120 140
RMS CURRENT (A)RMS CURRENT (A)
Feb.1999
Page 5
MITSUBISHI THYRISTOR MODULES
TM55RZ/EZ-24,-2H
HIGH VOLTAGEMEDIUM POWER GENERAL USE
INSULATED TYPE
MAXIMUM POWER DISSIPATION
(SINGLE PHASE FULLWAVE RECTIFIED)
160
140
120
120°
90°
60°
100
80
θ=30°
60
40
(PER SINGLE MODULE)
POWER DISSIPATION (W)
20
0
0 1606020
100
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
MAXIMUM POWER DISSIPATION
(THREE-PHASE FULLWAVE RECTIFIED)
160
140
120
100
80
θ=30°
60
40
(PER SINGLE MODULE)
POWER DISSIPATION (W)
20
0
0 1608040
20 14060 100
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
180°
RESISTIVE,
INDUCTIVE
12040 80 140
60°
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
120
θ
360°
LOAD
90°
θ
120°
LIMITING VALUE OF
THE DC OUTPUT CURRENT
(SINGLE PHASE FULLWAVE RECTIFIED)
130
120
110
100
90
80
70
(PER SINGLE MODULE)
CASE TEMPERATURE (°C)
60
θ=30° 60° 180°120°90°
50
0 1604020 100 120
60 80 140
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
LIMITING VALUE OF THE DC
OUTPUT CURRENT
(THREE-PHASE FULLWAVE RECTIFIED)
130
120
110
100
90
80
70
(PER SINGLE MODULE)
CASE TEMPERATURE (°C)
θ=30° 60°
60
50
0 1608040
20 14060 100
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
90°
120°
120
θ
Feb.1999
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