Dimension Inches Millimeters
A 7.09 180.0
B 3.15±0.008 80.0±0.2
C 2.36 60.0
D 1.97 Max. 50.0 Max.
E 1.97 50.0
F 1.87 Max. 47.5 Max.
G 1.73 44.0
H 1.42 36.0
J 1.38 35.0
K 1.02 26.0
L 0.94 24.0
M 0.90 23.0
N 0.63 16.0
P 0.35 9.0
Q M8 Metric M8
R 0.26 Dia. Dia. 6.5
Description:
Powerex Dual SCR
POW-R-BLOK™ Modules are
designed for use in applications
requiring phase control and
isolated packaging.The modules
are isolated for easy mounting
with other components on
common heatsinks.
Features:
M Isolated Mounting
M Low Thermal Impedance
Applications:
M AC and DC Motor Control
M Lighting Control
M Electric Furnace
Temperature Control
M Contactless Switches
Ordering Information:
Select the complete eight digit
module part number you desire
from the table below.
Example:TM400DZ-2H is a
1600 Volt, 400 Ampere Dual SCR
Module.
Current Rating Voltage
Type Amperes (x10) Volts
TM 40 1600 (2H)
S-53
Powerex,Inc., 200 Hillis Street,Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dual SCR Module
400 Amperes/1600 Volts
TM400DZ-2H T entative
Outline Drawing
TM400DZ-2H
Dual SCR Module
400 Amperes/1600 Volts
BB
L
Q - THD
(4 TYP.)
C E H N
D
F
G
H
A1
(TYP.)
K1
K2
R - DIA.
(3 TYP.)
A
.110 TAB
K2A1
(4 TYP.)
A2K1
K2
G2
HK
K1
G1
KJGJM
P
P
K2
G2
A2
K1
G1
S-54
Tentative
Powerex,Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
TM400DZ-2H
Dual SCR Module
400 Amperes/1600 Volts
Absolute Maximum Ratings
Characteristics Symbol TM400DZ-2H Units
Peak Forward Blocking Voltage V
DRM
1600 Volts
Transient Peak Forward Blocking Voltage (Non-Repetitive), t < 5ms V
DSM
1700 Volts
DC Forward Blocking Voltage V
D(DC)
1280 Volts
Peak Reverse Blocking Voltage V
RRM
1600 Volts
Transient Peak Reverse Blocking Voltage (Non-Repetitive), t < 5ms V
RSM
1700 Volts
DC Reverse Blocking Voltage V
R(DC)
1280 Volts
RMS On-State Current I
T(RMS)
620 Amperes
Average On-State Current, TC= 66°C I
T(AV)
400 Amperes
Peak Half-Cycle Surge (Non-Repetitive) On-State Current (60Hz) I
TSM
8000 Amperes
I2t (for Fusing), 8.3 milliseconds I2t 270000 A2sec
Critical Rate-of-Rise of On-State Current* di/dt 200 Amperes/ms
Peak Gate Power Dissipation P
GM
10 Watts
Average Gate Power Dissipation P
G(AV)
3 Watts
Peak Forward Gate Voltage V
GFM
10 Volts
Peak Reverse Gate Voltage V
GRM
5 Volts
Peak Forward Gate Current I
GFM
4 Amperes
Storage Temperature T
STG
-40 to 125 °C
Junction Temperature T
j
-40 to 125 °C
Maximum Mounting Torque M6 Mounting Screw — 26 in.-lb.
Maximum Mounting Torque M8 Terminal Screw — 95 in.-lb.
Module Weight (Typical) — 1100 Grams
V Isolation V
RMS
2500 Volts
*Tj= 125°C, IG= 1.0A, VD= 1/2 V
DRM
S-55
Powerex,Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
TM400DZ-2H
Dual SCR Module
400 Amperes/1600 Volts
Tentative
Electrical and Thermal Characteristics, Tj= 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Max. Units
Blocking State Maximums
Forward Leakage Current, Peak I
DRM
Tj= 125°C, V
DRM
= Rated — 60 mA
Reverse Leakage Current, Peak I
RRM
Tj= 125°C, V
RRM
= Rated — 60 mA
Conducting State Maximums
Peak On-State Voltage V
TM
Tj= 125°C, ITM= 1200A — 1.4 Volts
Switching Minimums
Critical Rate-of-Rise of Off-State Voltage dv/dt Tj= 125°C, VD= 2/3 V
DRM
500 — Volts/ms
Thermal Maximums
Thermal Resistance, Junction-to-Case R
u(J-C)
Per Module — 0.1 °C/Watt
Thermal Resistance, Case-to-Fin R
u(C-F)
Per Module — 0.05 °C/Watt
Thermal Resistance, Terminal-to-Case — Per Module 10 — mΩ
Gate Parameters Maximums
Gate Current-to-Trigger I
GT
VD= 6V, RL= 2Ω 15 100 mA
Gate Voltage-to-Trigger V
GT
VD= 6V, RL= 2Ω — 3.0 Volts
Non-Trigger ing Gate Voltage V
GDM
Tj= 125°C, VD= 1/2 V
DRM
0.25 — Volts
S-56
Powerex,Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
TM400DZ-2H
Dual SCR Module
400 Amperes/1600 Volts
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE, HALF-WAVE)
AVERAGE ON-STATE CURRENT (AMPERES)
CASE TEMPERATURE (
o
C)
0
25
360
o
u
RESISTIVE, INDUCTIVE
LOAD PER SINGLE
ELEMENT
100 200 300 400
50
75
100
125
150
u = 30
o
120o180
o
60o90
o
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
AVERAGE ON-STATE CURRENT (AMPERES)
CASE TEMPERATURE (
o
C)
0
25
50
75
100
125
150
u = 30
o
360
o
u
RESISTIVE,
INDUCTIVE
LOAD PER
SINGLE
ELEMENT
100 200 300 400 500 600 700
120o180
o
90
o
60
o
270
o
DC
ON-STATE VOLTAGE (VOLTS)
MAXIMUM
ON-STATE CHARACTERISTICS
10
1
0.8
Tj = 125oC
ON-STATE CURRENT (AMPERES)
10
4
10
3
10
2
1.2 1.6 2.0 2.4
CYCLES AT 60 HZ
SURGE ON-STATE CURRENT (AMPERES)
RATED SURGE ON-STATE CURRENT
0
10
1
10
2
10
0
10000
8000
6000
4000
2000
GATE CURRENT (mA)
GATE CHARACTERISTICS
10
1
10
2
10
3
10
4
GATE VOLTAGE (VOLTS)
10
-1
10
0
10
1
10
2
I
GFM
=
4.0A
PGM = 10W
V
GDM
= 0.25V
V
GFM
= 10V
IGT = 100mA
Tj = 25oC
P
G(AV)
=
3.0W
VGT = 3.0V
MAXIMUM ON-STATE POWER
DISSIPATION CHARACTERISTICS
(SINGLE-PHASE, HALF WAVE)
AVERAGE ON-STATE CURRENT (AMPERES)
ON-STATE POWER DISSIPATION (WATTS)
RESISTIVE, INDUCTIVE LOAD
PER SINGLE ELEMENT
0
0
100 200 300 400
360
o
u
100
200
300
400
500
600
120
o
180
o
u = 30
o
60
o
90
o
MAXIMUM ON-STATE POWER
DISSIPATION CHARACTERISTICS
(RECTANGULAR WAVEFORM)
AVERAGE ON-STATE CURRENT (AMPERES)
ON-STATE POWER DISSIPATION (WATTS)
360
o
u
RESISTIVE, INDUCTIVE LOAD
PER SINGLE ELEMENT
0
0
200
400
600
800
100 200 300 400 500 600 700
120
o
180
o
270
o
u = 30
o
60
o
90
o
DC
TIME (SECONDS)
MAXIMUM THERMAL IMPEDANCE
CHARACTERISTIC (JUNCTION-TO-CASE)
0
10
-3
THERMAL IMPEDANCE, Z
u(J-C)
, (
o
C/W)
R
th(J-C)
= 0.1oC/W
10
-2
10
-1
10
0
10
1
0.02
0.04
0.06
0.08
0.10
0.12
Tentative
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