Page 1
TM25RZ/EZ-M,-H
MITSUBISHI THYRISTOR MODULES
TM25RZ/EZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
• IT (AV) Average on-state current ............ 25A
• I
F (AV) Average forward current ............ 25A
• V
RRM Repetitive peak reverse voltage
........ 400/800V
• V
DRM Repetitive peak off-state voltage
........ 400/800V
• MIX DOUBLE ARMS
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
DC motor control, NC equipment, AC motor control, contactless switches,
electric furnace temperature control, light dimmers
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
93.5
17.5
80
20 20
LABEL
K1 G1
3–M5
2–φ6.5
12.5
Tab#110, t=0.5
6.5
(RZ)
26
(EZ)
9
30
21
CR
A
1K2
A
1
CR
K
1
1K2
K
SR
SR
A
2
K1G
1
A
2
K1G
1
Feb.1999
Page 2
ABSOLUTE MAXIMUM RATINGS
Symbol
RRM
V
VRSM
VR (DC)
VDRM
VDSM
VD (DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Parameter
M
400
480
320
400
480
320
Voltage class
MITSUBISHI THYRISTOR MODULES
TM25RZ/EZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
H
800
960
640
800
960
640
Unit
V
V
V
V
V
V
for fusing
Parameter
Conditions
Single-phase, half-wave 180° conduction, T
One half cycle at 60Hz, peak value
Value for one cycle of surge current
D=1/2VDRM, IG=0.5A, Tj=125°C
V
Charged part to case
C=93°C
Symbol
IT (RMS), IF (RMS)
I
T (AV)
, I
F (AV)
ITSM, IFSM
2
t
I
di/dt
GM
P
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
Viso
RMS current
Average current
Surge (non-repetitive) current
2
t
I
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
Main terminal screw M5
—
Mounting torque
Mounting screw M6
—
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol
I
RRM
IDRM
VTM, VFM
dv/dt
GT
V
VGD
IGT
Rth (j-c)
Rth (c-f)
Repetitive peak reverse current
Repetitive peak off-state current
Foward voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
—
Insulation resistance
Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.
Parameter
Test conditions
j=125°C, VRRM applied
T
j=125°C, VDRM applied
T
j=125°C, ITM=IFM=75A, instantaneous meas.
T
j=125°C, VD=2/3VDRM
T
Tj=25°C, VD=6V, RL=2Ω
j=125°C, VD=1/2VDRM
T
Tj=25°C, VD=6V, RL=2Ω
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Min.
—
—
—
500
—
0.25
10
—
—
10
Ratings
39
25
500
1.0 × 10
100
5.0
0.5
10
5.0
2.0
–40~125
–40~125
2500
1.47~1.96
15~20
1.96~2.94
20~30
160
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
Unit
A
A
A
3
2
s
A
A/µs
W
W
V
V
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Max.
4.0
4.0
1.5
—
3.0
—
50
0.8
0.2
—
Unit
mA
mA
V
V/µs
V
V
mA
°C/W
°C/W
MΩ
Feb.1999
Page 3
MAXIMUM RATINGS
Item
Thyristor
Diode
VRRM VRSM VR (DC) VDRM
MITSUBISHI THYRISTOR MODULES
TM25RZ/EZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
T (RMS)
V
DSM
—
—
V
D (DC)
I
IF (RMS)
—
IT (AV)
IF (AV)
ITSM
IFSM
2
t
I
di/dt
—
PG
(AV)
—
—
Thyristor
Diode
Item
PGM
ELECTRICAL CHARACTERISTICS
Item
Thyristor
Diode
IRRM IDRM
—
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC RATED SURGE (NON-REPETITIVE)
3
10
7
Tj=125°C
5
3
2
2
10
7
5
3
2
1
CURRENT (A)GATE VOLTAGE (V)
10
7
5
3
2
0
10
1.0 1.4 1.8 2.62.2
0.6
V
V
VFM
FGM
—
TM
I
FGM
—
dv/dt
—
T
j Tstg
V
GT
—
V
GD
—
IGT
—
R
th (j-c)
CURRENT
500
400
300
200
CURRENT (A)
100
SURGE (NON-REPETITIVE)
0
CONDUCTION TIME (CYCLE AT 60Hz)FORWARD VOLTAGE (V)
Rth (c-f)
101 100
705030207532
10
10
10
GATE CHARACTERISTICS MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
4
3
2
1
7
VGT=3.0V
5
3
2
IGT=
0
50mA
7
5
3
2
–1
7
5
4
10
V
Tj=
25°C
1
FGM
=10V
VGD=0.25V
10
2
P
G(AV)
=
0.50W
10
PGM=5.0W
=2.0A
FGM
I
3
0
10
1.0
0.9
0.8
0.7
0.6
0.5
(°C/W)
0.4
0.3
0.2
0.1
TRANSIENT THERMAL IMPEDANCE
0
4
10
753275327532
10
–3
1
10
7532
–2
10
GATE CURRENT (mA) TIME (s)
10
–1
0
10
753275327532
Feb.1999
Page 4
MITSUBISHI THYRISTOR MODULES
TM25RZ/EZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
MAXIMUM AVERAGE
POWER DISSIPATION
(SINGLE PHASE HALFWAVE)
40
35
30
25
θ
360°
RESISTIVE,
INDUCTIVE LOAD
PER SINGLE ELEMENT
60°
20
θ=30°
15
10
5
AVERAGE POWER DISSIPATION (W)
0
025105
MAXIMUM AVERAGE POWER
DISSIPATION (RECTANGULAR WAVE)
50
40
120°
30
20
θ=30°
90°
60°
10
AVERAGE POWER DISSIPATION (W)
0
0402010
53515 25
RESISTIVE, INDUCTIVE LOAD
PER SINGLE ELEMENT
AVERAGE CURRENT (A) AVERAGE CURRENT (A)
120°
90°
15 20
270°
180°
θ
360°
30
180°
DC
LIMITING VALUE OF THE AVERAGE
CURRENT (SINGLE PHASE HALFWAVE)
130
120
360°
110
RESISTIVE, INDUCTIVE
PER SINGLE
100
90
CASE TEMPERATURE (°C)CASE TEMPERATURE (°C)CASE TEMPERATURE (°C)
80
02025510
θ=30° 60° 90° 120° 180°
15
AVERAGE CURRENT (A)AVERAGE CURRENT (A)
LIMITING VALUE OF THE AVERAGE
CURRENT (RECTANGULAR WAVE)
130
120
110
100
90
80
70
θ=30° 60° 90° DC270°
60
50
0402010 30 3515525
120°
180°
θ
LOAD
ELEMENT
θ
360°
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE
ELEMENT
MAXIMUM AVERAGE POWER DISSIPATION
(REVERSE-PARALLEL CONNECTION,
THREE-PHASE THREE-LINE CONNECTION)
80
70
60
50
40
θ
360°
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE MODULE
θ
θ=180°
90°
60°
30°
30
20
10
AVERAGE POWER DISSIPATION (W)
0
0802010
30
50 60 70
40
LIMITING VALUE OF THE RMS CURRENT
(REVERSE-PARALLEL CONNECTION,
THREE-PHASE THREE-LINE CONNECTION)
130
125
120
115
110
105
100
95
90
85
RESISTIVE, INDUCTIVE LOAD
80
0802010
θ
θ
360°
PER SINGLE MODULE
30
40
50 60 70
θ=30°,60°,90°
180°
RMS CURRENT (A)RMS CURRENT (A)
Feb.1999
Page 5
MITSUBISHI THYRISTOR MODULES
TM25RZ/EZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
MAXIMUM POWER DISSIPATION
(SINGLE PHASE FULLWAVE RECTIFIED)
80
70
60
50
40
60°
θ=30°
30
20
(PER SINGLE MODULE)
POWER DISSIPATION (W)
10
0
0502010
RESISTIVE, INDUCTIVE
30
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
MAXIMUM POWER DISSIPATION
(THREE-PHASE FULLWAVE RECTIFIED)
80
70
60
50
40
θ=30°
60°
30
20
(PER SINGLE MODULE)
POWER DISSIPATION (W)
10
0
0804020
10 7030 50
RESISTIVE, INDUCTIVE
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
90°
θ
360°
360°
LOAD
90°
LOAD
60
120°
θ
40
180°
θ
120°
LIMITING VALUE OF
THE DC OUTPUT CURRENT
(SINGLE PHASE FULLWAVE RECTIFIED)
130
125
120
115
110
105
100
95
(PER SINGLE MODULE)
90
CASE TEMPERATURE (°C)
85
80
0502010 30 40
θ=30° 60° 90° 180°120°
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
LIMITING VALUE OF THE DC
OUTPUT CURRENT
(THREE-PHASE FULLWAVE RECTIFIED)
130
125
120
115
110
105
100
95
(PER SINGLE MODULE)
90
CASE TEMPERATURE (°C)
85
80
0804020
10 7030 50
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
90°θ=30° 60° 120°
60
θ
Feb.1999
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