Page 1
TM25RZ/EZ-24,-2H
MITSUBISHI THYRISTOR MODULES
TM25RZ/EZ-24,-2H
HIGH VOLTAGE MEDIUM POWER GENERAL USE
INSULATED TYPE
• IT (AV) Average on-state current ............ 25A
• I
F (AV) Average forward current ............ 25A
• V
RRM Repetitive peak reverse voltage
.... 1200/1600V
• V
DRM Repetitive peak off-state voltage
.... 1200/1600V
• MIX DOUBLE ARMS
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
DC motor control, NC equipment, AC motor control, contactless switches,
electric furnace temperature control, light dimmers
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
93.5
16.5
80
23 23
LABEL
2–φ6.5
K1
G1
3–M5
Tab#110, t=0.5
13
6.5
26
9
30
21
(RZ)
(EZ)
CR
1K2
A
A
1
CR
1
K
K
1K2
SR
SR
A
2
K1G
1
A
2
K1G
1
Feb.1999
Page 2
ABSOLUTE MAXIMUM RATINGS
Symbol
RRM
V
VRSM
VR (DC)
VDRM
VDSM
VD (DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Parameter
24
1200
1350
960
1200
1350
960
MITSUBISHI THYRISTOR MODULES
TM25RZ/EZ-24,-2H
HIGH VOLTAGE MEDIUM POWER GENERAL USE
INSULATED TYPE
Voltage class
H
1600
1700
1280
1600
1700
1280
Unit
V
V
V
V
V
V
for fusing
Parameter
Conditions
Single-phase, half-wave 180° conduction, T
One half cycle at 60Hz, peak value
Value for one cycle of surge current
D=1/2VDRM, IG=1.0A, Tj=125°C
V
Charged part to case
C=87°C
Symbol
IT (RMS), IF (RMS)
I
T (AV)
, I
F (AV)
ITSM, IFSM
2
t
I
di/dt
GM
P
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
Viso
RMS current
Average current
Surge (non-repetitive) current
2
t
I
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
Main terminal screw M5
—
Mounting torque
Mounting screw M6
—
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol
I
RRM
IDRM
VTM, VFM
dv/dt
GT
V
VGD
IGT
Rth (j-c)
Rth (c-f)
Repetitive peak reverse current
Repetitive peak off-state current
Forward voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
—
Insulation resistance
Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.
Parameter
Test conditions
j=125°C, VRRM applied
T
j=125°C, VDRM applied
T
j=125°C, ITM=IFM=75A, instantaneous meas.
T
j=125°C, VD=2/3VDRM
T
Tj=25°C, VD=6V, RL=2Ω
j=125°C, VD=1/2VDRM
T
Tj=25°C, VD=6V, RL=2Ω
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Min.
—
—
—
500
—
0.25
10
—
—
10
Ratings
39
25
500
1.0 × 10
100
5.0
0.5
10
5.0
2.0
–40~125
–40~125
2500
1.47~1.96
15~20
1.96~2.94
20~30
160
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
Unit
A
A
A
3
2
s
A
A/µs
W
W
V
V
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Max.
10
10
1.8
—
3.0
—
50
0.8
0.20
—
Unit
mA
mA
V
V/µs
V
V
mA
°C/W
°C/W
MΩ
Feb.1999
Page 3
MAXIMUM RATINGS
Item
Thyristor
Diode
VRRM VRSM VR (DC) VDRM
MITSUBISHI THYRISTOR MODULES
TM25RZ/EZ-24,-2H
HIGH VOLTAGE MEDIUM POWER GENERAL USE
INSULATED TYPE
T (RMS)
V
DSM
—
—
V
D (DC)
I
IF (RMS)
—
IT (AV)
IF (AV)
ITSM
IFSM
2
t
I
di/dt
—
PG
(AV)
—
Thyristor
Diode
Item
PGM
—
ELECTRICAL CHARACTERISTICS
Item
Thyristor
Diode
IRRM IDRM
—
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC RATED SURGE (NON-REPETITIVE)
3
10
7
Tj=125°C
5
3
2
2
10
7
5
3
2
1
CURRENT (A)GATE VOLTAGE (V)
10
7
5
3
2
0
10
0.5
1.0 1.5 2.0 2.5
V
V
VFM
FGM
—
TM
I
FGM
—
dv/dt
—
T
j Tstg
V
GT
—
V
GD
—
IGT
—
R
th (j-c)
CURRENT
500
450
400
350
300
250
200
CURRENT (A)
150
100
SURGE (NON-REPETITIVE)
50
0
CONDUCTION TIME (CYCLE AT 60Hz)FORWARD VOLTAGE (V)
Rth (c-f)
101 100
705030207532
10
10
10
GATE CHARACTERISTICS MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
4
3
2
1
7
VGT=3.0V
5
3
2
IGT=
0
50mA
7
Tj=
5
25°C
3
2
–1
7
5
4
1
10
VFGM=10V
VGD=0.25V
10
2
PG(AV)=
0.50W
10
PGM=5.0W
IFGM=2.0A
3
0
10
1.0
0.9
0.8
0.7
0.6
0.5
(°C/W)
0.4
0.3
0.2
0.1
TRANSIENT THERMAL IMPEDANCE
0
4
10
753275327532
10
–3
10
7532
10
1
–2
GATE CURRENT (mA) TIME (s)
10
–1
0
10
753275327532
Feb.1999
Page 4
MITSUBISHI THYRISTOR MODULES
TM25RZ/EZ-24,-2H
HIGH VOLTAGE MEDIUM POWER GENERAL USE
INSULATED TYPE
MAXIMUM AVERAGE
POWER DISSIPATION
(SINGLE PHASE HALFWAVE)
50
40
θ
360°
RESISTIVE, INDUCTIVE
30
LOAD
PER SINGLE ELEMENT
θ=30°
20
10
AVERAGE POWER DISSIPATION (W)
0
025105
MAXIMUM AVERAGE POWER
DISSIPATION (RECTANGULAR WAVE)
50
40
30
90°
60°
30°
20
10
AVERAGE POWER DISSIPATION (W)
0
0408
AVERAGE CURRENT (A) AVERAGE CURRENT (A)
120°
90°
60°
15 20
270°
180°
DC
120°
θ
360°
RESISTIVE,
INDUCTIVE LOAD
PER SINGLE ELEMENT
3216 24
180°
LIMITING VALUE OF THE AVERAGE
CURRENT (SINGLE PHASE HALFWAVE)
130
120
360°
110
RESISTIVE, INDUCTIVE
PER SINGLE
100
90
CASE TEMPERATURE (°C)CASE TEMPERATURE (°C)
80
02025510
θ=30° 60° 90° 120° 180°
15
AVERAGE CURRENT (A)AVERAGE CURRENT (A)
LIMITING VALUE OF THE AVERAGE
CURRENT (RECTANGULAR WAVE)
130
120
110
100
90
80
θ=30° 60° DC270°
70
90°
180°
120°
60
50
0402010 30 3515525
θ
LOAD
ELEMENT
θ
360°
RESISTIVE,
INDUCTIVE LOAD
PER SINGLE
ELEMENT
Feb.1999
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