Datasheet TM200RZ-2H, TM200RZ-24, TM200GZ-H, TM200GZ-2H, TM200GZ-24 Datasheet (Mitsubishi)
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TM200RZ/EZ/GZ-M,-H,24,-2H
(RZ Type)
MITSUBISHI THYRISTOR MODULES
TM200RZ/EZ/GZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
• IT (AV) Average on-state current .......... 200A
• I
F (AV) Average forward current .......... 200A
• V
RRM Repetitive peak reverse voltage
.......... 400/800/1200/1600V
• V
DRM Repetitive peak off-state voltage
.......... 400/800/1200/1600V
• MIX DOUBLE ARMS
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
DC motor control, NC equipment, AC motor control, contactless switches,
electric furnace temperature control, light dimmers
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
39
(RZ)
(EZ)
(GZ)
A1
A
A1
CR
K
1
K2
CR
1
CR
K2
1
K
K2
K
1
SR
SR
SR
A
2
K1
G1
A
2
K1
G1
A
2
K1
G1
3–φ6.5
206
3–M8
A1 K1 A2K2
18 16 18 16
30
68.5
32 30
150
LABEL
(RZ Type)
68.5
40
K1
G1
Tab#110, t=0.5
9
7
23
32
(Bold line is connective bar.)
Feb.1999
ABSOLUTE MAXIMUM RATINGS
Symbol
RRM
V
VRSM
VR (DC)
VDRM
VDSM
VD (DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Parameter
M
400
480
320
400
480
320
MITSUBISHI THYRISTOR MODULES
TM200RZ/EZ/GZ-M,-H,-24,-2H
MEDIUM POWER GENERAL USE
INSULATED TYPE
H
800
960
640
800
960
640
Voltage class
24
1200
1350
960
1200
1350
960
H
1600
1700
1280
1600
1700
1280
Unit
V
V
V
V
V
V
for fusing
Parameter
Conditions
Single-phase, half-wave 180° conduction, T
One half cycle at 60Hz, peak value
Value for one cycle of surge current
D=1/2VDRM, IG=1.0A, Tj=125°C
V
Charged part to case
C=67°C
Symbol
IT (RMS), IF (RMS)
I
T (AV)
, I
F (AV)
ITSM, IFSM
2
t
I
di/dt
GM
P
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
Viso
RMS current
Average current
Surge (non-repetitive) current
2
t
I
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
Main terminal screw M8
—
Mounting torque
Mounting screw M6
—
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol
I
RRM
IDRM
VTM, VFM
dv/dt
GT
V
VGD
IGT
Rth (j-c)
Rth (c-f)
Repetitive peak reverse current
Repetitive peak off-state current
Forward voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
—
Insulation resistance
Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.
Parameter
Test conditions
j=125°C, VRRM applied
T
j=125°C, VDRM applied
T
j=125°C, ITM=IFM=600A, instantaneous meas.
T
j=125°C, VD=2/3VDRM
T
Tj=25°C, VD=6V, RL=2Ω
j=125°C, VD=1/2VDRM
T
Tj=25°C, VD=6V, RL=2Ω
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Min.
—
—
—
500
—
0.25
15
—
—
10
Ratings
310
200
4000
6.7 × 10
100
10
3.0
10
5.0
4.0
–40~125
–40~125
2500
8.83~10.8
90~110
1.96~3.92
20~40
300
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
Unit
A
A
A
4
2
s
A
A/µs
W
W
V
V
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Max.
30
30
1.35
—
3.0
—
100
0.2
0.1
—
Unit
mA
mA
V
V/µs
V
V
mA
°C/W
°C/W
MΩ
Feb.1999
MAXIMUM RATINGS
Item
Thyristor
Diode
VRRM VRSM VR (DC) VDRM
MITSUBISHI THYRISTOR MODULES
TM200RZ/EZ/GZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
T (RMS)
V
DSM
—
—
V
D (DC)
I
IF (RMS)
—
IT (AV)
IF (AV)
ITSM
IFSM
2
t
I
di/dt
—
PG
(AV)
—
—
Thyristor
Diode
Item
PGM
ELECTRICAL CHARACTERISTICS
Item
Thyristor
Diode
IRRM IDRM
—
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC RATED SURGE (NON-REPETITIVE)
4
10
7
Tj=125°C
5
3
2
3
10
7
5
3
2
2
CURRENT (A)GATE VOLTAGE (V)
10
7
5
3
2
1
10
0.5
1.0 2.0 2.51.5
V
V
VFM
FGM
—
TM
I
FGM
—
dv/dt
—
T
j Tstg
V
GT
—
V
GD
—
IGT
—
R
th (j-c)
CURRENT
4000
3500
3000
2500
2000
1500
CURRENT (A)
1000
SURGE (NON-REPETITIVE)
500
0
CONDUCTION TIME (CYCLE AT 60Hz)FORWARD VOLTAGE (V)
Rth (c-f)
101 100
705030207532
10
10
10
GATE CHARACTERISTICS MAXIMUM TRANSIENT THERMAL
4
3
2
1
7
5
3
2
0
7
5
3
2
–1
7
5
4
10
VFGM=10V
VGT=3.0V
Tj=25°C
IGT=
100mA
1
PG(AV)=
3.0W
VGD=0.25V
2
10
PGM=10W
IFGM=4.0A
3
10
IMPEDANCE (JUNCTION TO CASE)
0
10
0.25
0.20
0.15
(°C/W)
0.10
0.05
TRANSIENT THERMAL IMPEDANCE
0
4
753275327532
10
10
–3
7532
10
10
1
324
–2
GATE CURRENT (mA) TIME (s)
10
–1
0
10
753275327532
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM200RZ/EZ/GZ-M,-H,-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
MAXIMUM AVERAGE POWER
DISSIPATION (SINGLE PHASE HALFWAVE)
320
280
θ
360°
240
RESISTIVE, INDUCTIVE
200
PER SINGLE ELEMENT
160
LOAD
θ=30°
90°
60°
120
80
40
AVERAGE POWER DISSIPATION (W)
0
40 80 120 160
0 200
MAXIMUM AVERAGE
POWER DISSIPATION
400
350
300
250
200
(RECTANGULAR WAVE)
θ
360°
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE
ELEMENT
θ=30°
90°
60°
180°
120°
150
100
50
AVERAGE POWER DISSIPATION (W)
0
0 32040
16080 120
200 240 280
AVERAGE CURRENT (A) AVERAGE CURRENT (A)
120°
270°
180°
DC
LIMITING VALUE OF THE AVERAGE
CURRENT (SINGLE PHASE HALFWAVE)
130
120
110
100
RESISTIVE, INDUCTIVE
PER SINGLE ELEMENT
90
80
70
CASE TEMPERATURE (°C)CASE TEMPERATURE (°C)
60
50
0 120 20040
θ=30° 60° 90°
80 160
AVERAGE CURRENT (A)AVERAGE CURRENT (A)
LIMITING VALUE OF THE AVERAGE
CURRENT (RECTANGULAR WAVE)
130
120
110
100
90
RESISTIVE, INDUCTIVE
PER SINGLE ELEMENT
80
70
60
50
60° 270°
40
30
0 32040
80 160 240
90°
120°
180°
θ
360°
LOAD
180°120°
θ
360°
LOAD
DCθ=30°
280120 200
Feb.1999
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