Datasheet TM200PZ-M, TM200PZ-H, TM200PZ-2H, TM200PZ-24, TM200DZ-M Datasheet (Mitsubishi)

TM200DZ/CZ/PZ-M,-H,-24,-2H

(DZ Type)

MITSUBISHI THYRISTOR MODULES

TM200DZ/CZ/PZ-M,-H,-24,-2H

HIGH POWER GENERAL USE

INSULATED TYPE

• IT (AV) Average on-state current .......... 200A

• V

RRM Repetitive peak reverse voltage

........ 400/800/1200/1600V

• V

DRM Repetitive peak off-state voltage

........ 400/800/1200/1600V

• DOUBLE ARMS

• Insulated Type

• UL Recognized
Yellow Card No. E80276 (N)

File No. E80271

APPLICATION

DC motor control, NC equipment, AC motor control, Contactless switches,
Electric furnace temperature control, Light dimmers

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

39

(DZ)

(CZ)

(PZ)

A1

A

A1

CR1

K1

K2

CR2

CR1

1

CR1

K1 K2

K1

CR2

K2

CR2

A2

A2

A2

3–φ6.5

206

4–M8

A1 K1 A2K2

18 16 18 16

30

68.5

32

150

LABEL

30

68.5

K2

G2

K1

G1

40

Tab#110,
t=0.5

9

7

23

32

K2
G2

K1
G1

K2
G2

K1
G1

K2
G2

K1
G1

(DZ Type)

(Bold line is connective bar.)

Feb.1999

ABSOLUTE MAXIMUM RATINGS

Symbol

RRM

V

VRSM

VR (DC)

VDRM

VDSM

VD (DC)

Repetitive peak reverse voltage

Non-repetitive peak reverse voltage

DC reverse voltage

Repetitive peak off-state voltage

Non-repetitive peak off-state voltage

DC off-state voltage

Parameter

M

400

480

320

400

480

320

MITSUBISHI THYRISTOR MODULES

TM200DZ/CZ/PZ-M,-H,-24,-2H

HIGH POWER GENERAL USE

INSULATED TYPE

H

800

960

640

800

960

640

Voltage class

24

1200

1350

960

1200

1350

960

2H

1600

1700

1280

1600

1700

1280

Unit

V

V

V

V

V

V

Symbol

T (RMS)

I

IT (AV)

ITSM

2

t

I

di/dt

GM

P

PG (AV)

VFGM

VRGM

IFGM

Tj

Tstg

Viso

RMS on-state current

Average on-state current

Surge (non-repetitive) on-state current

2

t

I

Critical rate of rise of on-state current

Peak gate power dissipation

Average gate power dissipation

Peak gate forward voltage

Peak gate reverse voltage

Peak gate forward current

Junction temperature

Storage temperature

Isolation voltage

—

Mounting torque

—

Weight

Parameter

for fusing

ELECTRICAL CHARACTERISTICS

Symbol

I

RRM

IDRM

VTM

dv/dt

GT

V

VGD

IGT

Rth (j-c)

Rth (c-f)

Repetitive peak reverse current

Repetitive peak off-state current

On-state voltage

Critical rate of rise of off-state voltage

Gate trigger voltage

Gate non-trigger voltage

Gate trigger current

Thermal resistance

Contact thermal resistance

—

Insulation resistance

Parameter

Conditions

Single-phase, half-wave 180° conduction, T

C=64°C

One half cycle at 60Hz, peak value

Value for one cycle of surge current

D=1/2VDRM, IG=1.0A, Tj=125°C

V

Charged part to case

Main terminal screw M8

Mounting screw M6

Typical value

Test conditions

j=125°C, VRRM applied

T

j=125°C, VDRM applied

T

j=125°C, ITM=600A, instantaneous meas.

T

j=125°C, VD=2/3VDRM

T
Tj=25°C, VD=6V, RL=2Ω

j=125°C, VD=1/2VDRM

T
Tj=25°C, VD=6V, RL=2Ω

Junction to case (per 1/2 module)

Case to fin, conductive grease applied (per 1/2 module)

Measured with a 500V megohmmeter between main terminal
and case

Min.

—

—

—

500

—

0.25

15

—

—

10

Ratings

310

200

4000

6.7 × 10

100

10

3.0

10

5.0

4.0

–40~+125

–40~+125

2500

8.83~10.8

90~110

1.96~3.92

20~40

300

Limits

Typ.

—

—

—

—

—

—

—

—

—

—

Unit

A

A

A

4

2

s

A

A/µs

W

W

V

V

A

°C
°C

V

N·m

kg·cm

N·m

kg·cm

g

Max.

30

30

1.35

—

3.0

—

100

0.2

0.1

—

Unit

mA

mA

V

V/µs

V

V

mA

°C/W
°C/W

MΩ

Feb.1999

PERFORMANCE CURVES

MITSUBISHI THYRISTOR MODULES

TM200DZ/CZ/PZ-M,-H,-24,-2H

HIGH POWER GENERAL USE

INSULATED TYPE

MAXIMUM ON-STATE CHARACTERISTIC

2

10

7

Tj=125°C

5
3

2

1

10

7
5

3
2

0

10

7

ON-STATE CURRENT (A)

5
3

2

–1

10

0.5

1.0 2.0 2.51.5

ON-STATE VOLTAGE (V) CONDUCTION TIME

GATE CHARACTERISTICS MAXIMUM TRANSIENT THERMAL

4

10

10

GATE VOLTAGE (V)

10

3
2

7
5

3
2

7
5

3
2

–1

7
5
4

1

VGT=3.0V

Tj=25°C

0

IGT=
100mA

1

10

V

FGM

=10V

VGD=0.25V

2

10

P

G(AV)

=

3.0W

10

PGM=10W

I

FGM

=4.0A

3

RATED SURGE (NON-REPETITIVE)

ON-STATE CURRENT

4000

3500

3000

2500

2000

1500

1000

ON-STATE CURRENT (A)

SURGE (NON-REPETITIVE)

500

0

101 100

705030207532

(CYCLES AT 60Hz)

IMPEDANCE (JUNCTION TO CASE)

0.25

10

0

1

10

7532

32

0.20

0.15

(°C/W)

0.10

0.05

TRANSIENT THERMAL IMPEDANCE

0

4

10

753275327532

10

–3

10

–2

10

–1

0

10

753275327532

TIME (s)GATE CURRENT (mA)

MAXIMUM AVERAGE ON-STATE

POWER DISSIPATION

320

280

240

200

160

120

DISSIPATION (W)

(SINGLE PHASE HALFWAVE)

θ

360°

RESISTIVE,
INDUCTIVE
LOAD

60°

θ=30°

80

AVERAGE ON-STATE POWER

40

0

40 80 120 160

0 200

AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A)

120°

90°

PER SINGLE
ELEMENT

180°

LIMITING VALUE OF THE AVERAGE

ON-STATE CURRENT

(SINGLE PHASE HALFWAVE)

130

PER SINGLE

120

110

100

ELEMENT

θ

360°

RESISTIVE,
INDUCTIVE
LOAD

90

80

70

CASE TEMPERATURE (°C)

60

50

0 120 20040

θ=30° 60° 90°

80 160

180°120°

Feb.1999

MITSUBISHI THYRISTOR MODULES

TM200DZ/CZ/PZ-M,-H,-24,-2H

HIGH POWER GENERAL USE

INSULATED TYPE

400

350

300

250

200

150

DISSIPATION (W)

100

AVERAGE ON-STATE POWER

50

0

0 32040

MAXIMUM AVERAGE ON-STATE

POWER DISSIPATION

(RECTANGULAR WAVE)

θ

360°

RESISTIVE,
INDUCTIVE
LOAD

θ=30°

60°

120°

90°

PER SINGLE
ELEMENT

16080 120

270°

180°

200 240 280

DC

LIMITING VALUE OF THE AVERAGE

ON-STATE CURRENT

130

120

110

100

90

80

70

60

50

CASE TEMPERATURE (°C)

40

30

(RECTANGULAR WAVE)

PER SINGLE
ELEMENT

60° 90°

0 32040

80 160 240

AVERAGE ON-STATE CURRENT (A)AVERAGE ON-STATE CURRENT (A)

120°

θ

360°

RESISTIVE,
INDUCTIVE
LOAD

180° DCθ=30°

270°

280120 200

Feb.1999