Page 1
TM130DZ/CZ/PZ-M,-H
(DZ Type)
MITSUBISHI THYRISTOR MODULES
TM130DZ/CZ/PZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
• IT (AV) Average on-state current .......... 130A
• V
RRM Repetitive peak reverse voltage
........ 400/800V
• V
DRM Repetitive peak off-state voltage
........ 400/800V
• DOUBLE ARMS
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
DC motor control, NC equipment, AC motor control, Contactless switches,
Electric furnace temperature control, Light dimmers
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
3–φ6.5
206
4–M8
A1 K1 A2K2
18 16 18 16
30
68.5
32 30
150
LABEL
68.5
K2
G2
K1
G1
40
Tab#110,
t=0.5
9
23
7
32
39
(DZ)
(CZ)
(PZ)
CR
1
K
CR
CR
1
K
2
CR
1
K1K
2
CR
1
K
2
K
1
CR
A
2
2
A
2
2
A
2
2
A
1
A
1
A
1
(DZ Type)
(Bold line is connective bar.)
K
2
G
2
K
1
G
1
K
2
G
2
K
1
G
1
K
2
G
2
K
1
G
1
Feb.1999
Page 2
ABSOLUTE MAXIMUM RATINGS
Symbol
RRM
V
VRSM
VR (DC)
VDRM
VDSM
VD (DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Parameter
M
400
480
320
400
480
320
Voltage class
MITSUBISHI THYRISTOR MODULES
TM130DZ/CZ/PZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
H
800
960
640
800
960
640
Unit
V
V
V
V
V
V
Symbol
T (RMS)
I
IT (AV)
ITSM
2
t
I
di/dt
GM
P
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
Viso
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
2
t
I
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Weight
Parameter
for fusing
ELECTRICAL CHARACTERISTICS
Symbol
I
RRM
IDRM
VTM
dv/dt
GT
V
VGD
IGT
Rth (j-c)
Rth (c-f)
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
—
Insulation resistance
Parameter
Conditions
Single-phase, half-wave 180° conduction, T
C=85°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
D=1/2VDRM, IG=1.0A, Tj=125°C
V
Charged part to case
Main terminal screw M8
Mounting screw M6
Typical value
Test conditions
j=125°C, VRRM applied
T
j=125°C, VDRM applied
T
j=125°C, ITM=390A, instantaneous meas.
T
j=125°C, VD=2/3VDRM
T
Tj=25°C, VD=6V, RL=2Ω
j=125°C, VD=1/2VDRM
T
Tj=25°C, VD=6V, RL=2Ω
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Min.
—
—
—
500
—
0.25
15
—
—
10
Ratings
205
130
2600
2.8 × 10
100
10
3.0
10
5.0
4.0
–40~+125
–40~+125
2500
8.83~10.8
90~110
1.96~3.92
20~40
300
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
Unit
A
A
A
4
2
s
A
A/µs
W
W
V
V
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Max.
30
30
1.3
—
3.0
—
100
0.22
0.1
—
Unit
mA
mA
V
V/µs
V
V
mA
°C/W
°C/W
MΩ
Feb.1999
Page 3
PERFORMANCE CURVES
MITSUBISHI THYRISTOR MODULES
TM130DZ/CZ/PZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
MAXIMUM ON-STATE CHARACTERISTIC
4
10
7
5
3
2
3
10
7
5
3
2
2
10
7
5
ON-STATE CURRENT (A)
3
2
1
10
0.4
Tj=125°C
0.8 1.2 2.0 2.41.6
ON-STATE VOLTAGE (V) CONDUCTION TIME
GATE CHARACTERISTICS MAXIMUM TRANSIENT THERMAL
4
10
10
GATE VOLTAGE (V)
10
3
2
7
5
3
2
7
5
3
2
–1
7
5
4
1
VGT=3.0V
Tj=25°C
0
IGT=
100mA
1
10
V
FGM
=10V
VGD=0.25V
2
10
P
G(AV)
=
3.0W
10
PGM=10W
I
FGM
=4.0A
3
RATED SURGE (NON-REPETITIVE)
ON-STATE CURRENT
3200
2800
2400
2000
1600
1200
800
ON-STATE CURRENT (A)
SURGE (NON-REPETITIVE)
400
0
101 100
705030207532
(CYCLES AT 60Hz)
IMPEDANCE (JUNCTION TO CASE)
0.25
10
0
1
10
7532
0.20
0.15
(°C/W)
0.10
0.05
TRANSIENT THERMAL IMPEDANCE
0
4
753275327532
10
10
–3
10
–2
10
–1
0
10
753275327532
TIME (s)GATE CURRENT (mA)
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(SINGLE PHASE HALFWAVE)
160
140
PER SINGLE
ELEMENT
120
60°
100
θ=30°
80
60
DISSIPATION (W)
40
AVERAGE ON-STATE POWER
20
0
0 1606020 100 140
40 80 120
AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A)
120°
90°
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
180°
LIMITING VALUE OF THE AVERAGE
(SINGLE PHASE HALFWAVE)
130
120
110
100
90
80
θ=30° 60° 90°
70
CASE TEMPERATURE (°C)
60
50
0 120 16020 40 100
ON-STATE CURRENT
PER SINGLE
ELEMENT
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
180°
120°
60 80 140
Feb.1999
Page 4
MITSUBISHI THYRISTOR MODULES
TM130DZ/CZ/PZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
200
160
120
80
DISSIPATION (W)
40
AVERAGE ON-STATE POWER
0
0 20040
400
350
300
250
200
150
AVERAGE ON-STATE
100
POWER DISSIPATION (W)
50
0
0 3208040
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(RECTANGULAR WAVE)
PER SINGLE
ELEMENT
90°
60°
θ=30°
80 120
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
(SINGLE PHASE FULLWAVE AC)
PER SINGLE
MODULE
θ
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
120
160
RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A)
270°
180°
120°
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
160
θ=180°
200 240 280
DC
CASE TEMPERATURE (°C)CASE TEMPERATURE (°C)
120°
90°
60°
30°
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
130
120
110
100
90
80
70
60
50
130
120
110
100
90
80
70
60
50
(RECTANGULAR WAVE)
PER SINGLE
ELEMENT
θ=30° 60° DC270°
0 20040 16080 120
AVERAGE ON-STATE CURRENT (A)AVERAGE ON-STATE CURRENT (A)
LIMITING VALUE OF THE RMS
ON-STATE CURRENT
(SINGLE PHASE FULLWAVE AC)
θ
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
0 3208040
120 160
θ
360°
180°90°
120°
PER SINGLE
MODULE
120°
180°
200 240 280
RESISTIVE,
INDUCTIVE
LOAD
θ=30°
60°
90°
MAXIMUM ON-STATE POWER DISSIPATION
(SINGLE PHASE FULLWAVE RECTIFIED)
400
θ
320
240
160
(PER SINGLE MODULE)
80
ON-STATE POWER DISSIPATION (W)
0
0 32012040
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
θ=30°
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
60°
90°
200
180°
120°
24080 160 280
LIMITING VALUE OF THE DC
(SINGLE PHASE FULLWAVE RECTIFIED)
130
120
110
100
90
80
70
(PER SINGLE MODULE)
CASE TEMPERATURE (°C)
60
50
0 3208040 200 240
OUTPUT CURRENT
θ=30°
60° 180°90°
θ
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
120 160 280
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
120°
Feb.1999
Page 5
MITSUBISHI THYRISTOR MODULES
TM130DZ/CZ/PZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
MAXIMUM ON-STATE POWER DISSIPATION
(THREE PHASE FULLWAVE RECTIFIED)
400
θ
320
360°
RESISTIVE,
240
INDUCTIVE
LOAD
160
(PER SINGLE MODULE)
80
ON-STATE POWER DISSIPATION (W)
0
0 40080
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
θ=30°
90°
60°
320160 240
120°
LIMITING VALUE OF THE DC
(THREE PHASE FULLWAVE RECTIFIED)
130
120
110
100
90
80
70
(PER SINGLE MODULE)
CASE TEMPERATURE (°C)
60
50
0 40080
OUTPUT CURRENT
θ
360°
θ=30°
60° 120°
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
RESISTIVE,
INDUCTIVE
LOAD
90°
320160 240
Feb.1999
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