TM130RZ/EZ/GZ-M,-H
(RZ Type)
MITSUBISHI THYRISTOR MODULES
TM130RZ/EZ/GZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
• IT (AV) Average on-state current .......... 130A
• I
F (AV) Average forward current .......... 130A
• V
RRM Repetitive peak reverse voltage
........ 400/800V
• V
DRM Repetitive peak off-state voltage
........ 400/800V
• MIX DOUBLE ARMS
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
DC motor control, NC equipment, AC motor control, contactless switches,
electric furnace temperature control, light dimmers
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
39
(RZ)
(EZ)
(GZ)
A1
A
A1
CR
1
CR
CR
1
K
K2
SR
K2
K
1
SR
K2
1
K
SR
2
A
K1
G1
2
A
K1
G1
A
2
K1
G1
3–φ6.5
206
3–M8
A1 K1 A2K2
18 16 18 16
30
68.5
32 30
150
LABEL
(RZ Type)
68.5
K1
G1
40
Tab#110,
t=0.5
9
23
7
32
(Bold line is connective bar.)
Feb.1999
ABSOLUTE MAXIMUM RATINGS
Symbol
RRM
V
VRSM
VR (DC)
VDRM
VDSM
VD (DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Parameter
M
400
480
320
400
480
320
Voltage class
MITSUBISHI THYRISTOR MODULES
TM130RZ/EZ/GZ-M,-H
MEDIUM POWER GENERAL USE
INSULATED TYPE
H
800
960
640
800
960
640
Unit
V
V
V
V
V
V
for fusing
Parameter
Conditions
Single-phase, half-wave 180° conduction, T
One half cycle at 60Hz, peak value
Value for one cycle of surge current
D=1/2VDRM, IG=1.0A, Tj=125°C
V
Charged part to case
C=85°C
Symbol
IT (RMS), IF (RMS)
I
T (AV)
, I
F (AV)
ITSM, IFSM
2
t
I
di/dt
GM
P
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
Viso
RMS current
Average current
Surge (non-repetitive) current
2
t
I
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
Main terminal screw M8
—
Mounting torque
Mounting screw M6
—
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol
I
RRM
IDRM
VTM, VFM
dv/dt
GT
V
VGD
IGT
Rth (j-c)
Rth (c-f)
Repetitive peak reverse current
Repetitive peak off-state current
Forward voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
—
Insulation resistance
Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables.
Parameter
Test conditions
j=125°C, VRRM applied
T
j=125°C, VDRM applied
T
j=125°C, ITM=IFM=390A, instantaneous meas.
T
j=125°C, VD=2/3VDRM
T
Tj=25°C, VD=6V, RL=2Ω
j=125°C, VD=1/2VDRM
T
Tj=25°C, VD=6V, RL=2Ω
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Min.
—
—
—
500
—
0.25
15
—
—
10
Ratings
205
130
2600
2.8 × 10
100
10
3.0
10
5.0
4.0
–40~125
–40~125
2500
8.83~10.8
90~110
1.96~3.92
20~40
300
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
Unit
A
A
A
4
2
s
A
A/µs
W
W
V
V
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Max.
30
30
1.3
—
3.0
—
100
0.22
0.1
—
Unit
mA
mA
V
V/µs
V
V
mA
°C/W
°C/W
MΩ
Feb.1999
MAXIMUM RATINGS
Item
Thyristor
Diode
VRRM VRSM VR (DC) VDRM
MITSUBISHI THYRISTOR MODULES
TM130RZ/EZ/GZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
T (RMS)
V
DSM
—
—
V
D (DC)
I
IF (RMS)
—
IT (AV)
IF (AV)
ITSM
IFSM
2
t
I
di/dt
—
PG
(AV)
—
—
Thyristor
Diode
Item
PGM
ELECTRICAL CHARACTERISTICS
Item
Thyristor
Diode
IRRM IDRM
—
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC RATED SURGE (NON-REPETITIVE)
4
10
7
10
CURRENT (A)GATE VOLTAGE (V)
10
10
5
3
2
7
5
3
2
7
5
3
2
2
2
1
0.4
Tj=125°C
0.8 1.2 2.0 2.41.6
V
V
VFM
FGM
—
TM
I
FGM
—
dv/dt
—
T
j Tstg
V
GT
—
V
GD
—
IGT
—
R
th (j-c)
CURRENT
3200
2800
2400
2000
1600
1200
CURRENT (A)
800
SURGE (NON-REPETITIVE)
400
0
CONDUCTION TIME (CYCLE AT 60Hz)FORWARD VOLTAGE (V)
Rth (c-f)
101 100
705030207532
10
10
10
GATE CHARACTERISTICS MAXIMUM TRANSIENT THERMAL
IMPEDANCE (JUNCTION TO CASE)
4
3
2
1
7
5
3
2
0
7
5
3
2
–1
7
5
4
10
VFGM=10V
VGT=3.0V
Tj=25°C
IGT=
100mA
1
PG(AV)=
3.0W
VGD=0.25V
2
10
PGM=10W
IFGM=4.0A
3
10
0
10
0.25
0.20
0.15
(°C/W)
0.10
0.05
TRANSIENT THERMAL IMPEDANCE
0
4
753275327532
10
10
–3
7532
10
10
1
–2
GATE CURRENT (mA) TIME (s)
10
–1
0
10
753275327532
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM130RZ/EZ/GZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
MAXIMUM AVERAGE POWER
DISSIPATION (SINGLE PHASE HALFWAVE)
160
140
120
120°
90°
60°
100
θ=30°
80
60
40
20
AVERAGE POWER DISSIPATION (W)
0
0 1606020 100 140
40 80 120
θ
360°
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE ELEMENT
MAXIMUM AVERAGE
POWER DISSIPATION
200
180
160
140
120
100
(RECTANGULAR WAVE)
180°
120°
90°
60°
θ=30°
80
60
40
20
AVERAGE POWER DISSIPATION (W)
0
0 20040
80 120
θ
360°
RESISTIVE, INDUCTIVE
LOAD
PER SINGLE ELEMENT
AVERAGE CURRENT (A) AVERAGE CURRENT (A)
270°
160
180°
DC
LIMITING VALUE OF THE AVERAGE
CURRENT (SINGLE PHASE HALFWAVE)
130
120
110
100
RESISTIVE, INDUCTIVE
90
80
θ=30° 60° 90°
120°
70
CASE TEMPERATURE (°C)CASE TEMPERATURE (°C)CASE TEMPERATURE (°C)
60
50
0 120 16020 40 100
60 80 140
AVERAGE CURRENT (A)AVERAGE CURRENT (A)
LIMITING VALUE OF THE AVERAGE
CURRENT (RECTANGULAR WAVE)
130
120
110
100
RESISTIVE, INDUCTIVE
PER SINGLE
ELEMENT
90
80
θ=30° 60° DC270°
70
180°90°
120°
60
50
0 20040 16080 120
θ
360°
LOAD
PER SINGLE
ELEMENT
180°
θ
360°
LOAD
MAXIMUM AVERAGE POWER DISSIPATION
(REVERSE-PARALLEL CONNECTION,
THREE-PHASE THREE-LINE CONNECTION)
400
350
300
250
200
150
RESISTIVE, INDUCTIVE
100
θ
θ
360°
LOAD
PER SINGLE
MODULE
50
AVERAGE POWER DISSIPATION (W)
0
0 3208040
120
200 240 280
160
θ=180°
120°
90°
60°
30°
LIMITING VALUE OF THE RMS CURRENT
(REVERSE-PARALLEL CONNECTION,
THREE-PHASE THREE-LINE CONNECTION)
130
120
110
100
90
80
70
60
RESISTIVE, INDUCTIVE
PER SINGLE MODULE
50
0 3208040
θ
θ
360°
LOAD
120 160
θ=30°
60°
90°
120°
180°
200 240 280
RMS CURRENT (A)RMS CURRENT (A)
Feb.1999
MITSUBISHI THYRISTOR MODULES
TM130RZ/EZ/GZ-M,-H
HIGH POWER GENERAL USE
INSULATED TYPE
MAXIMUM POWER DISSIPATION
(SINGLE PHASE FULLWAVE RECTIFIED)
400
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
θ
90°
60°
θ=30°
200
320
240
160
(PER SINGLE MODULE)
80
POWER DISSIPATION (W)
0
0 32012040
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
MAXIMUM POWER DISSIPATION
(THREE-PHASE FULLWAVE RECTIFIED)
400
θ
320
360°
240
RESISTIVE,
INDUCTIVE
LOAD
60°
θ=30°
160
(PER SINGLE MODULE)
80
POWER DISSIPATION (W)
0
0 40080
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
120°
24080 160 280
90°
180°
320160 240
120°
LIMITING VALUE OF
THE DC OUTPUT CURRENT
(SINGLE PHASE FULLWAVE RECTIFIED)
130
120
110
100
90
80
70
(PER SINGLE MODULE)
CASE TEMPERATURE (°C)
60
50
θ=30° 60° 180°90°
120°
θ
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
0 3208040 200 240
120 160 280
DC OUTPUT CURRENT (A)
(PER TWO MODULES)
LIMITING VALUE OF THE DC
OUTPUT CURRENT
(THREE-PHASE FULLWAVE RECTIFIED)
130
120
110
100
90
80
70
(PER SINGLE MODULE)
CASE TEMPERATURE (°C)
θ=30°
60° 120°
60
50
0 40080
DC OUTPUT CURRENT (A)
(PER THREE MODULES)
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
90°
320160 240
Feb.1999
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