Datasheet TM130PZ-2H, TM130PZ-24, TM130DZ-2H, TM130DZ-24, TM130CZ-2H Datasheet (Mitsubishi)
...Page 1
TM130DZ/CZ/PZ-24,-2H
(DZ Type)
MITSUBISHI THYRISTOR MODULES
TM130DZ/CZ/PZ-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
• IT (AV) Average on-state current .......... 130A
• V
RRM Repetitive peak reverse voltage
........ 1200/1600V
• V
DRM Repetitive peak off-state voltage
........ 1200/1600V
• DOUBLE ARMS
• Insulated Type
• UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
DC motor control, NC equipment, AC motor control, Contactless switches,
Electric furnace temperature control, Light dimmers
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
3–φ6.5
206
4–M8
A1 K1 A2K2
18 16 18 16
30
32
68.5
150
30
68.5
K2
G2
K1
G1
40
Tab#110,
t=0.5
(DZ)
(CZ)
CR
1
K
CR
1
K
2
CR
1
K1K
2
CR
A
2
2
A
2
2
A
1
1
A
K
2
G
2
K
1
G
1
K
2
G
2
K
1
G
1
LABEL
(DZ Type)
32
39
(PZ)
K
CR
1
K
2
K
A
1
1
CR
2
2
G
2
A
2
K
1
G
1
9
23
7
(Bold line is connective bar.)
Feb.1999
Page 2
ABSOLUTE MAXIMUM RATINGS
Symbol
RRM
V
VRSM
VR (DC)
VDRM
VDSM
VD (DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
DC off-state voltage
Parameter
24
1200
1350
960
1200
1350
960
Voltage class
MITSUBISHI THYRISTOR MODULES
TM130DZ/CZ/PZ-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
2H
1600
1700
1280
1600
1700
1280
Unit
V
V
V
V
V
V
Symbol
T (RMS)
I
IT (AV)
ITSM
2
t
I
di/dt
GM
P
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
Viso
RMS on-state current
Average on-state current
Surge (non-repetitive) on-state current
2
t
I
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Weight
Parameter
for fusing
ELECTRICAL CHARACTERISTICS
Symbol
I
RRM
IDRM
VTM
dv/dt
GT
V
VGD
IGT
Rth (j-c)
Rth (c-f)
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Critical rate of rise of off-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Thermal resistance
Contact thermal resistance
—
Insulation resistance
Parameter
Conditions
Single-phase, half-wave 180° conduction, T
C=78°C
One half cycle at 60Hz, peak value
Value for one cycle of surge current
D=1/2VDRM, IG=1.0A, Tj=125°C
V
Charged part to case
Main terminal screw M8
Mounting screw M6
Typical value
Test conditions
j=125°C, VRRM applied
T
j=125°C, VDRM applied
T
j=125°C, ITM=390A, instantaneous meas.
T
j=125°C, VD=2/3VDRM
T
Tj=25°C, VD=6V, RL=2Ω
j=125°C, VD=1/2VDRM
T
Tj=25°C, VD=6V, RL=2Ω
Junction to case (per 1/2 module)
Case to fin, conductive grease applied (per 1/2 module)
Measured with a 500V megohmmeter between main terminal
and case
Min.
—
—
—
500
—
0.25
15
—
—
10
Ratings
205
130
2600
2.8 × 10
100
10
3.0
10
5.0
4.0
–40~+125
–40~+125
2500
8.83~10.8
90~110
1.96~3.92
20~40
300
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
Unit
A
A
A
4
2
s
A
A/µs
W
W
V
V
A
°C
°C
V
N·m
kg·cm
N·m
kg·cm
g
Max.
30
30
1.5
—
3.0
—
100
0.22
0.1
—
Unit
mA
mA
V
V/µs
V
V
mA
°C/W
°C/W
MΩ
Feb.1999
Page 3
PERFORMANCE CURVES
MITSUBISHI THYRISTOR MODULES
TM130DZ/CZ/PZ-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
MAXIMUM ON-STATE CHARACTERISTIC
4
10
7
5
3
2
3
10
7
5
3
2
2
10
7
5
ON-STATE CURRENT (A)
3
2
1
10
0.6
Tj=125°C
0.8 1.2 2.0 2.21.61.0 1.4 1.8
ON-STATE VOLTAGE (V) CONDUCTION TIME
GATE CHARACTERISTICS MAXIMUM TRANSIENT THERMAL
4
10
10
GATE VOLTAGE (V)
10
3
2
1
7
5
3
2
0
7
5
3
2
–1
7
5
4
VGT=3.0V
Tj=25°C
IGT=
100mA
1
10
V
FGM
=10V
VGD=0.25V
2
10
P
G(AV)
=
3.0W
10
PGM=10W
I
FGM
=4.0A
3
RATED SURGE (NON-REPETITIVE)
ON-STATE CURRENT
3200
2800
2400
2000
1600
1200
800
ON-STATE CURRENT (A)
SURGE (NON-REPETITIVE)
400
0
101 100
705030207532
(CYCLES AT 60Hz)
IMPEDANCE (JUNCTION TO CASE)
0.25
10
0
1
10
7532
0.20
0.15
(°C/W)
0.10
0.05
TRANSIENT THERMAL IMPEDANCE
0
4
10
753275327532
10
–3
10
–2
10
–1
0
10
753275327532
TIME (s)GATE CURRENT (mA)
MAXIMUM AVERAGE ON-STATE
POWER DISSIPATION
200
(SINGLE PHASE HALFWAVE)
120°
160
90°
120
60°
θ=30°
80
DISSIPATION (W)
40
AVERAGE ON-STATE POWER
0
40 80 120
0 200
AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A)
180°
PER SINGLE
ELEMENT
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
160
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
(SINGLE PHASE HALFWAVE)
150
PER SINGLE ELEMENT
130
110
θ
360°
RESISTIVE,
INDUCTIVE
LOAD
90
70
CASE TEMPERATURE (°C)
50
0 120 20040
θ=30° 60° 90°
80
180°120°
160
Feb.1999
Page 4
MITSUBISHI THYRISTOR MODULES
TM130DZ/CZ/PZ-24,-2H
HIGH POWER GENERAL USE
INSULATED TYPE
MAXIMUM AVERAGE ON-STATE POWER
400
320
RESISTIVE,
240
INDUCTIVE
LOAD
160
80
0
0 20040
AVERAGE ON-STATE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A)
DISSIPATION
(RECTANGULAR WAVE)
PER SINGLE
90°
ELEMENT
180°
120°
θ
360°
θ=30°
60°
270°
16080 120
DC
LIMITING VALUE OF THE AVERAGE
ON-STATE CURRENT
130
120
110
100
90
80
70
CASE TEMPERATURE (°C)
60
50
(RECTANGULAR WAVE)
PER SINGLE
ELEMENT
θ=30°
0 32040
90°
60°
120° 270°
80 160 240
180°
RESISTIVE,
INDUCTIVE
LOAD
θ
360°
DC
280120 200
Feb.1999
Loading...