Datasheet TLSV5100 Datasheet (Telefunken)

Vishay Telefunken

Bicolor Symbol LED
in 2.5 x 5 mm Untinted Top-Diffused Package

Color Type Technology Angle of Half Intensity

High efficiency red TLSV5100 GaAsP on GaP 50

Green TLSV5100G GaP on GaP 50

Features

D

Even luminance of the emitting surface

D

Ideal as flush mounted panel indicators

D

For DC and pulse operation

D

Color mixing possible due to separate
anode terminals

D

Luminous intensity selected into groups

D

Categorized for green color

D

Wide viewing angle

D

Common cathode

TLSV5100

±

ö

°
°

96 11496

Applications

Indicating and illumination purposes

Absolute Maximum Ratings

T

= 25_C, unless otherwise specified

amb

TLSV5100 ,TLSV5100G ,

Parameter Test Conditions Symbol Value Unit
Reverse voltage per diode V
DC forward current per diode I
Surge forward current per diode tp ≤ 10 ms I
Power dissipation per diode T
Total power dissipation T
Junction temperature T
Storage temperature range T
Soldering temperature t ≤ 5 s,

Thermal resistance junction/ambient per diode R
Thermal resistance junction/ambient total R

≤ 55°C P

amb

≤ 55°C P

amb

2 mm from body

R

F

FSM

V

tot

stg

T

sd

thJA
thJA

6 V

30 mA

1 A
100 mW
150 mW

j

100

–55 to +100

260

450 K/W
300 K/W

°

C

°

C

°

C

Document Number 83052
Rev. A1, 04-Feb-99

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TLSV5100

Vishay Telefunken

Optical and Electrical Characteristics

T

= 25_C, unless otherwise specified

amb

High efficiency red (TLSV5100 )

Parameter Test Conditions Type Symbol Min Typ Max Unit
Per diode
Luminous intensity IF = 10 mA, I

Vmin/IVmax

Dominant wavelength IF = 10 mA
Peak wavelength IF = 10 mA
Angle of half intensity IF = 10 mA ϕ ±50 deg
Forward voltage IF = 20 mA V
Reverse voltage IR = 10 mA V
Junction capacitance VR = 0, f = 1 MHz C

Green (TLSV5100G )

Parameter Test Conditions Type Symbol Min Typ Max Unit
Per diode
Luminous intensity IF = 10 mA, I

Vmin/IVmax

Dominant wavelength IF = 10 mA
Peak wavelength IF = 10 mA
Angle of half intensity IF = 10 mA ϕ ±50 deg
Forward voltage IF = 20 mA V
Reverse voltage IR = 10 mA V
Junction capacitance VR = 0, f = 1 MHz C

≥ 0.5 I

≥ 0.5 I

0.63 1 mcd

V

l
l

V

l
l

612 625 nm

d
p

F

R

j

635 nm

2 3 V

6 15 V

50 pF

0.63 1 mcd
562 575 nm

d
p

F

R

j

565 nm

2.4 3 V

6 15 V

50 pF

Typical Characteristics (T

125

100

75

50

V

25

P – Power Dissipation ( mW )

0

020406080

T

95 9983

Figure 1 Power Dissipation vs. Ambient Temperature

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– Ambient Temperature ( °C )

amb

= 25_C, unless otherwise specified)

amb

60

50

40

30

20

F

I – Forward Current ( mA )

10

100

0

020406080

T

95 9984

Figure 2 Forward Current vs. Ambient Temperature

– Ambient Temperature ( °C )

amb

100

Rev. A1, 04-Feb-99

TLSV5100

Vishay Telefunken

10000

tp/T=0.01

1000

0.02

0.05

0.1

100

0.2

0.5
1

10

F

I – Forward Current ( mA )

T

amb

1

0.01 0.1 1 10
t

95 10085

– Pulse Length ( ms )

p

Figure 3 Forward Current vs. Pulse Length

0°

10°20

1.0

0.9

v

55°C

1.6
High Efficiency Red

1.2

0.8

0.4

v rel

I – Relative Luminous Intensity

100

95 10027

IF=10mA

0

0

20 40 60 80

T

– Ambient Temperature ( °C )

amb

100

Figure 6 Rel. Luminous Intensity vs.

Ambient Temperature

°

30°

40°

50°

2.4

High Efficiency Red

2.0

1.6

1.2

0.8

0.7

v rel

I – Relative Luminous Intensity

0.4 0.2 0 0.2 0.4

0.6

95 10082

Figure 4 Rel. Luminous Intensity vs.

Angular Displacement

1000

High Efficiency Red

100

tp/T=0.001
t

=10ms

10

1

F

I – Forward Current ( mA )

p

0.1
02468

95 10026 V

– Forward Voltage ( V )

F

Figure 5 Forward Current vs. Forward Voltage

0.6

60°
70°

80°

0.8

0.4

v rel

I – Relative Luminous Intensity

0

I

500

(mA)

F

t

p

/T

95 10321

10 20 50 100 200

0.5 0.2 0.1 0.05 0.021

Figure 7 Rel. Lumin. Intensity vs.

Forw. Current/Duty Cycle

10

High Efficiency Red

1

0.1

v rel

I – Relative Luminous Intensity

0.01

10

95 10029

110

I

– Forward Current ( mA )

F

100

Figure 8 Relative Luminous Intensity vs. Forward Current

Document Number 83052
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TLSV5100

Vishay Telefunken

1.2
High Efficiency Red

1.0

0.8

0.6

0.4

0.2

v rel

I – Relative Luminous Intensity

0

690

95 10040

590 610 630 650 670

l

– Wavelength ( nm )

Figure 9 Relative Luminous Intensity vs. Wavelength

1000

Green

100

10

2.4
Green

2.0

1.6

1.2

0.8

0.4

v rel

I – Specific Luminous Intensity

0

10 20 50 100 200

95 10263

IF – Forward Current ( mA )

Figure 12 Specific Luminous Intensity vs.

Forward Current

10

Green

1

500

tp/T=0.001

=10ms

t

1

F

I – Forward Current ( mA )

p

0.1
02468

95 10034 V

– Forward Voltage ( V )

F

Figure 10 Forward Current vs. Forward Voltage

1.6

Green

1.2

0.8

0.4

v rel

I – Relative Luminous Intensity

95 10035

0

IF=10mA

0

20 40 60 80

T

– Ambient Temperature ( °C )

amb

Figure 11 Rel. Luminous Intensity vs.

Ambient Temperature

10

100

0.1

v rel

I – Relative Luminous Intensity

0.01
100

95 10037

110

I

– Forward Current ( mA )

F

Figure 13 Relative Luminous Intensity vs.

Forward Current

1.2
Green

1.0

0.8

0.6

0.4

0.2

v rel

I – Relative Luminous Intensity

0

620

95 10038

520 540 560 580 600

l

– Wavelength ( nm )

Figure 14 Relative Luminous Intensity vs. Wavelength

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Rev. A1, 04-Feb-99

Dimensions in mm

TLSV5100

Vishay Telefunken

95 11327

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TLSV5100

Vishay Telefunken

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their

impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or

indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: [phone], Fax number: 49 (0)7131 67 2423

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