
TLP626, TLP626-2,TLP626-4
LOW INPUT CURRENT A.C. INPUT
PHOTOTRANSISTOR OPTICALLY
COUPLED ISOLATORS
APPROVALS
l UL recognised, File No. E91231
DESCRIPTION
The TLP626, TLP626-2, TLP626-4 series of
optically coupled isolators consist of two infrared
light emitting diodes connected in inverse parallel
and NPN silicon photo transistors in space
efficient dual in line plastic packages.
FEATURES
l Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
l Low input current ± 0.5mA I
l High Isolation Voltage (5.3kV
l AC or polarity insensitive input
l All electrical parameters 100% tested
l Custom electrical selections available
F
RMS
,7.5kV
PK
)
APPLICATIONS
l Computer terminals
l Industrial systems controllers
l Telephone sets, Telephone exchangers
l Signal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT
0.6
0.1
10.46
9.86
1.25
0.75
OPTION G
7.62
0.26
10.16
TLP626
TLP626-2
1.2
3.0
TLP626-4
1.2
3.0
3.0
2.54
1.2
10.16
9.16
20.32
19.32
5.08
4.08
0.5
2.54
0.5
2.54
7.0
6.0
3.35
3.35
0.5
4.0
3.0
7.0
6.0
4.0
3.0
0.5
0.5
3.35
Dimensions in mm
1
2
7.62
0.26
1
2
3
4
7.62
0.26
1
2
3
4 13
5
7.0
6
6.0
7
8
4.0
3.0
0.5
7.62
0.26
4
3
13°
Max
8
7
6
5
13°
Max
16
15
14
12
11
10
9
13°
Max
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
DB92549m-AAS /A1

ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 125°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current ± 50mA
Power Dissipation 70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
Emitter-collector Voltage BV
Power Dissipation 150mW
CEO
ECO
55V
6V
POWER DISSIPATION
Total Power Dissipation 200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF) 1.0 1.15 1.3 V IF = ± 10mA
Output Collector-emitter Breakdown (BV
( Note 2 )
Emitter-collector Breakdown (BV
Collector-emitter Dark Current (I
) 55 V IC = 0.5mA
CEO
) 6 V IE = 100µA
ECO
) 100 nA VCE = 24V
CEO
Coupled Current Transfer Ratio (CTR) (Note 2) 100 1200 % ± 1mAIF , 0.5V V
Low Input CTR 50 % ± 0.5mAIF,1.5V V
CE
CE
Collector-emitter Saturation VoltageVCE
(SAT)
0.4 V ± 1mAIF , 0.5mAI
0.2 V ± 1mAIF , 1mAI
Input to Output Isolation Voltage V
Input-output Isolation Resistance R
5300 V
ISO
7500 V
10
5x10
ISO
RMS
PK
Ω V
Rise Time tr 8 µs VCC = 10V ,
Fall Time tf 8 µs IC= 2mA, RL= 100Ω
Turn-on Time ton 10 µs
Turn-off Time toff 8 µs
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
See note 1
See note 1
= 500V (note 1)
IO
DB92549m-AAS/A1
C
C

Collector Power Dissipation vs. Ambient Temperature
200
Relative Current Transfer Ratio
vs. Ambient Temperature
(mW)
C
150
100
50
Collector power dissipation P
0
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )
Forward Current vs. Ambient Temperature
60
50
40
(±mA)
F
1.5
IF = ± 0.5mA
VCE = 1.5V
1.0
0.5
Relative current transfer ratio
0
-30 0 25 50 75 100
Ambient temperature TA ( °C )
Relative Current Transfer Ratio
vs. Forward Current
2.8
2.4
VCE = 1.5V
TA = 25°C
2.0
30
20
Forward current I
10
0
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )
Relative Current Transfer Ratio
vs. Ambient Temperature
1.5
IF = ±1mA
VCE = 0.5V
1.0
0.5
Relative current transfer ratio
0
-30 0 25 50 75 100
Ambient temperature TA ( °C )
1.6
1.2
0.8
Relative current transfer ratio
0.4
0
0.1 0.2 0.5 1.0 2 5
Forward current IF (±mA)
Relative Current Transfer Ratio
vs. Forward Current
2.8
2.4
VCE = 0.5V
TA = 25°C
2.0
1.6
1.2
0.8
Relative current transfer ratio
0.4
0
0.1 0.2 0.5 1.0 2 5
Forward current IF (±mA)
DB92549m-AAS/A1