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TLHK4200
Vishay Telefunken
High Intensity LED in ø 3 mm Tinted Non–Diffused
Package
Color Type Technology Angle of Half Intensity
±
Red TLHK4200 AlInGaP on GaAs 22
Description
This device has been designed to meet the increasing
demand for AlInGaP technology.
It is housed in a 3 mm clear plastic package. The small
viewing angle of these devices provides a high brightness.
All LEDs are categorized in luminous intensity groups.
That allows users to assemble LEDs with uniform
appearance.
ö
°
Features
D
AlInGaP technology
D
Standard ø 3 mm (T-1) package
D
Small mechanical tolerances
D
Suitable for DC and high peak current
D
Very small viewing angle
D
Very high intensity
D
Luminous intensity categorized
Applications
Status lights
OFF / ON indicator
Background illumination
Readout lights
Maintenance lights
Legend light
96 11675
Rev. A1, 04-Feb-99
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TLHK4200
Vishay Telefunken
Absolute Maximum Ratings
T
= 25_C, unless otherwise specified
amb
TLHK4200
Parameter Test Conditions Symbol Value Unit
Reverse voltage V
DC forward current T
Surge forward current tp ≤ 10 ms I
Power dissipation T
Junction temperature T
Operating temperature range T
Storage temperature range T
Soldering temperature t ≤ 5 s, 2 mm from body T
Thermal resistance junction/ambient R
Optical and Electrical Characteristics
T
= 25_C, unless otherwise specified
amb
Red (TLHK4200 )
≤ 60°C I
amb
≤ 60°C P
amb
R
F
FSM
V
amb
stg
sd
thJA
5 V
30 mA
0.1 A
80 mW
j
100
–40 to +100
–55 to +100
260
°
C
°
C
°
C
°
C
400 K/W
Parameter Test Conditions Type Symbol Min Typ Max Unit
Luminous intensity IF = 10 mA I
Dominant wavelength IF = 10 mA
Peak wavelength IF = 10 mA
V
l
d
l
p
25 50 mcd
630 nm
643 nm
Angle of half intensity IF = 10 mA ϕ ±22 deg
Forward voltage IF = 20 mA V
Reverse voltage IR = 10 mA V
Junction capacitance VR = 0, f = 1 MHz C
Typical Characteristics (T
125
100
75
50
V
25
P – Power Dissipation ( mW )
= 25_C, unless otherwise specified)
amb
60
50
40
30
20
F
I – Forward Current ( mA )
10
F
R
j
1.9 2.6 V
5 V
15 pF
0
020406080
T
95 10887
Figure 1 Power Dissipation vs. Ambient Temperature
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– Ambient Temperature ( °C )
amb
100
0
020406080
T
95 10894
Figure 2 Forward Current vs. Ambient Temperature
– Ambient Temperature ( °C )
amb
Rev. A1, 04-Feb-99
100
Page 3
1.0
0.9
0.8
0.7
v rel
I – Relative Luminous Intensity
0.4 0.2 0 0.2 0.4
0.6
95 10041
TLHK4200
Vishay Telefunken
0°
10°20
°
30°
40°
50°
60°
70°
80°
0.6
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Vrel
I – Relative Luminous Intensity
0.2
0
96 11589
1 10 100
2
5 2 1 0.5 0.210
5
IF(mA)
50
20
tp/T
Figure 3 Rel. Luminous Intensity vs. Angular Displacement
100
10
F
I – Forward Current ( mA )
1
1 1.5 2.0 2.5 3.0
VF – Forward Voltage ( V )95 10878
Figure 4 Forward Current vs. Forward Voltage
1.6
1.2
0.8
0.4
v rel
I – Relative Luminous Intensity
96 12077
IF=10mA
0
0
20 40 60 80
T
– Ambient Temperature ( °C )
amb
100
Figure 6 Rel. Lumin. Intensity vs. Forw. Current/Duty Cycle
10.00
1.00
0.10
Vrel
I – Relative Luminous Intensity
0.01
1 10 100
IF – Forward Current ( mA )96 11588
Figure 7 Relative Luminous Intensity vs. Forward Current
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Vrel
I – Relative Luminous Intensity
0.1
0
600 610 620 630 640 650 660 670 680 690 700
l
– Wavelength ( nm )96 12075
IF = 10 mA
Figure 5 Rel. Luminous Intensity vs. Ambient Temperature
Rev. A1, 04-Feb-99
Figure 8 Relative Luminous Intensity vs. Wavelength
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Page 4
TLHK4200
Vishay Telefunken
Dimensions in mm
95 10913
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Rev. A1, 04-Feb-99
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TLHK4200
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly , any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Rev. A1, 04-Feb-99
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
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