Datasheet TLC2942IDBR, TLC2942IDBLE Datasheet (Texas Instruments)

Page 1
TLC2942
HIGH-PERFORMANCE DUAL PHASE-LOCKED LOOP BUILDING BLOCK
SLAS146B – NOVEMBER 1996 – REVISED JUNE 1997
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
D
Dual TLC2932 by Multichip Module (MCM) Technology
D
Voltage-Controlled Oscillator (VCO) Section: – Complete Oscillator Using Only One
External Bias Resistor (R
BIAS
)
– Recommended Lock Frequency Range:
22 MHz to 50 MHz (V
DD
= 5 V ±5%,
T
A
= –20°C to 75°C, ×1 Output)
11 MHz to 25 MHz (V
DD
= 5 V ±5%,
T
A
= –20°C to 75°C, ×1/2 Output)
– Output Frequency...×1 and ×1/2
Selectable
D
Includes a High-Speed Edge-Triggered Phase Frequency Detector (PFD) With Internal Charge Pump
D
Independent VCO, PFD Power-Down Mode
description
The TLC2942 is a multichip module product that uses two TLC2932 chips. The TLC2932 chip is composed of a voltage-controlled oscillator and an edge-triggered phase frequency detector. The oscillation frequency range of each VCO is set by an external bias resistor (R
BIAS
) and each VCO output can be a ×1 or ×1/2 output frequency . Each high speed PFD with internal charge pump detects the phase difference between the reference frequency input and signal frequency input from the external counter. The VCO and the PFD have inhibit functions that can be used as a power-down mode. The high-speed and stable oscillation capability of the TLC2932 makes the TLC2942 suitable for use in dual high-performance phase-locked loop (PLL) systems.
AVAILABLE OPTIONS
PACKAGE
T
A
SMALL OUTLINE
(DB)
–20°C to 75°C TLC2942IDB
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright 1997, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20
LOGIC V
DD1
SELECT1
VCO OUT1
F
IN
–A1
F
IN
–B1
PFD OUT1
LOGIC GND1
GND
NC NC NC
GND
LOGIC V
DD2
SELECT2
VCO OUT2
F
IN
–A2
F
IN
–B2
PFD OUT2
LOGIC GND2
VCO V
DD1
BIAS1 VCOIN1 VCO GND1 VCOINHIBIT1 PFD INHIBIT1 NC GND NC NC NC GND VCO V
DD2
BIAS2 VCOIN2 VCO GND2 VCOINHIBIT2 PFD INHIBIT2 NC
DB PACKAGE
(TOP VIEW)
NC – No internal connection
Page 2
TLC2942 HIGH-PERFORMANCE DUAL PHASE-LOCKED LOOP BUILDING BLOCK
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functional block diagram
SELECT1
SELECT2
VCO_1 VCO_2
PFD_1 PFD_2
VCO
INHIBIT1
VCO
INHIBIT2
VCO OUT1 VCO OUT2
PFD OUT1 PFD OUT2
PFD INHIBIT1 PFD INHIBIT2
VCOIN1
FIN–A1
FIN–B1
VCOIN2
FIN–A2
FIN–B2
34 1523 2214
24
16
17
1833 6 21
36
4
5
Page 3
TLC2942
HIGH-PERFORMANCE DUAL PHASE-LOCKED LOOP BUILDING BLOCK
SLAS146B – NOVEMBER 1996 – REVISED JUNE 1997
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Terminal Functions
TERMINAL
I/
NAME NO.
O
DESCRIPTION
BIAS1 37 I VCO1 bias supply. An external resistor (R
BIAS
1) between VCO V
DD1
and BIAS1 supplies bias for adjusting
the oscillation frequency range.
BIAS2 25 I VCO2 bias supply. An external resistor (R
BIAS2
) between VCO V
DD2
and BIAS2 supplies bias for adjusting
the oscillation frequency range. FIN–A1 4 I Input reference frequency 1. The frequency f(REF IN)1 is applied to FIN-A1. FIN–A2 16 I Input reference frequency 2. The frequency f(REF IN)2 is applied to FIN-A2. FIN–B1 5 I Input for VCO1 external counter output frequency f(FIN-B)1. FIN-B1 is nominally provided from the external
counter (see Figure 28). FIN–B2 17 I Input for VCO2 external counter output frequency f(FIN-B)2. FIN-B2 is nominally provided from the external
counter (see Figure 28). GND 8, 12,
27,31
Ground
LOGIC V
DD1
1 Logic1 supply voltage. LOGIC V
DD1
supplies voltage to internal logic 1. LOGIC V
DD1
should be separate
from the other supply lines to reduce cross-coupling between power supplies. LOGIC V
DD2
13 Logic2 supply voltage. LOGIC V
DD2
supplies voltage to internal logic 2. LOGIC V
DD2
should be separate
from the other supply lines to reduce cross-coupling between power supplies. LOGIC GND1 7 Ground for the internal logic 1 LOGIC GND2 19 Ground for the internal logic 2 NC 9, 10, 11,
20, 28, 29, 30,
32
No internal connection
PFD INHIBIT1 33 I PFD inhibit 1 control. When PFD INHIBIT1 is high, PFD OUT1 is in the high-impedance state (see
Table 4). PFD INHIBIT2 21 I PFD inhibit 2 control. When PFD INHIBIT2 is high, PFD OUT2 is in the high-impedance state (see
Table 5). PFD OUT1 6 O PFD1 output. When the PFD INHIBIT1 is high, PFD OUT1 is in the high-impedance state. PFD OUT2 18 O PFD2 output. When the PFD INHIBIT2 is high, PFD OUT2 is in the high-impedance state. SELECT1 2 I VCO1 output frequency select. When SELECT1 is high, the VCO1 output frequency is 1/2 and when
SELECT1 is low, the output frequency is 1 (see Table 1). SELECT2 14 I VCO2 output frequency select. When SELECT2 is high, the VCO2 output frequency is 1/2 and when
SELECT2 is low, the output frequency is 1 (see Table 1). VCO GND1 35 Ground for VCO1 VCO GND2 23 Ground for VCO2 VCOINHIBIT1 34 I VCO1 inhibit control. When VCOINHIBIT1 is high, VCO OUT1 is low (see Table 2). VCOINHIBIT2 22 O VCO2 inhibit control. When VCOINHIBIT2 is high, VCO OUT2 is low (see Table 3). VCO OUT1 3 O VCO1 output. When VCOINHIBIT1 is high, VCO OUT1 is low. VCO OUT2 15 VCO2 output. When VCOINHIBIT2 is high, VCO OUT2 is low. VCO V
DD1
38 VCO1 supply voltage. VCO V
DD1
supplies voltage for VCO1. VCO V
DD1
should be separated from LOGIC
V
DD1
and LOGIC V
DD2
and VCO VDD2 to reduce cross-coupling between power supplies.
VCO V
DD2
26 VCO2 supply voltage. VCO V
DD2
supplies voltage for VCO2. VCO V
DD2
should be separated from LOGIC
V
DD1
and LOGIC V
DD2
and VCO VDD1 to reduce cross-coupling between power supplies.
VCOIN1 36 I VCO1 control voltage input. Nominally the external loop filter output1 connects to VCOIN1 to control VCO1
oscillation frequency . VCOIN2 24 I VCO2 control voltage input. Nominally the external loop filter output2 connects to VCOIN2 to control VCO2
oscillation frequency .
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detailed description
multichip module
The TLC2942 is a multichip module (MCM) product that uses two TLC2932 chips. A newly developed lead frame for TLC2942IBD is specially shaped and cut in the package to electrically isolate one chip from another. The two chips are completely independent from each other to perform the best stable oscillation and locking. If asynchronous locking operation is required for these two PLL blocks, each TLC2942 VCO and PFD can achieve the same stability as the single chip TLC2932IPW.
Three NC terminals are on both sides of the package between chip1 and chip2 due to the lead frame shape. To avoid performance degradation, special attention is needed for each PLL block PCB layout especially for supply voltage lines and GND patterns.
voltage-controlled oscillator (VCO)
VCO1 and VCO2 have the same typical characteristics. Each VCO oscillation frequency is determined by an external resistor (R
BIAS
) connected between each VCO VDD and BIAS terminals. The oscillation frequency and range depends on this register value. The bias resistor value for the minimum temperature coefficient is nominally 3.3 k with V
DD
= 3 V and nominally 2.2 k with VDD = 5 V. For the lock frequency range refer to the recommended operating conditions. Figure 1 shows the typical frequency variation and VCO control voltage.
VCO Oscillation Frequency Range
Bias Resistor (R
BIAS
)
1/2 V
DD
VCO Control Voltage (VCOIN)
VCO Oscillation Frequency
(f )
osc
Figure 1. VCO1 and VCO2 Oscillation Frequency
VCO output frequency 1/2 divider
SELECT1 and SELECT2 select between f
osc
and 1/2 f
osc
for the VCO output frequencies as shown in T able 1.
Table 1. SELECT1 and SELECT2 Function Table
SELECT1
VCO1 OUTPUT
FREQUENCY
SELECT2
VCO2 OUTPUT
FREQUENCY
Low
f
osc1
Low f
osc2
High
1/2 f
osc1
High 1/2 f
osc2
Page 5
TLC2942
HIGH-PERFORMANCE DUAL PHASE-LOCKED LOOP BUILDING BLOCK
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VCO inhibit function
Each VCO has an externally controlled inhibit function that inhibits the VCO output. The VCO oscillation is stopped during a high level on VCOINHIBIT , so the high level can also be used as the power-down mode. The VCO output maintains a low level during the power-down mode (see Table 2 and Table 3).
Table 2. VCO1 Inhibit Function
VCOINHIBIT1 VCO1 OSCILLAT OR VCO OUT1 VCO1 I
DD
Low Active Active Normal High Stop Low Power Down
Table 3. VCO2 Inhibit Function
VCOINHIBIT2 VCO2 OSCILLAT OR VCO OUT2 VCO2 I
DD
Low Active Active Normal High Stop Low Power Down
PFD operation
The PFD is a high-speed, edge-triggered detector with an internal charge pump. The PFD detects the phase difference between two frequency inputs supplied to F
IN
–A and FIN–B as shown in Figure 2. Nominally the
reference is supplied to F
IN
–A, and the frequency from the external counter output is fed to FIN–B.
FIN–A1,
FIN–A2
FIN–B1,
FIN–B2
PFD OUT1,
PFD OUT2
V
OH
Hi-Z
V
OL
Figure 2. PFD Function Timing Chart
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PFD output control
A high level on PFD INHIBIT places the PFD OUT in the high-impedance state and the PFD stops phase detection as shown in Table 4 and Table 5. A high level on PFD INHIBIT also can be used as the power-down mode for the PFD.
Table 4. PFD1 Inhibit Function
PFD INHIBIT1 DETECTION PFD OUT1 PFD1 I
DD
Low Active Active Normal
High Stop Hi-Z Power Down
Table 5. PFD2 Inhibit Function Table
PFD INHIBIT2 DETECTION PFD OUT2 PFD2 I
DD
Low Active Active Normal
High Stop Hi-Z Power Down
schematics
VCO block schematic (VCO1, VCO2)
Bias
Circuit
VCO
Output
1/2
R
BIAS
VCOIN1,
VCOIN2
(VCO control)
VCOINHIBIT
VCO OUT1,
VCO OUT2
SELECT1,2
M U X
Ring Oscillator
PFD block schematic (PFD1, PFD2)
Detector
Charge Pump
PFD OUT
FIN–A
FIN–B
PFD INHIBIT
V
DD
Page 7
TLC2942
HIGH-PERFORMANCE DUAL PHASE-LOCKED LOOP BUILDING BLOCK
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absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage (each supply), V
DD
(see Note 1) 7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range (each input), V
I
(see Note 1) –0.5 V to V
DD
+ 0.5 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input current (each input), I
I
±20 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output current (each output), I
O
±20 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total power dissipation, at (or below) T
A
= 25°C (see Note 2) 1160 mW. . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, T
A
–20°C to 75°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
–65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values are with respect to network GND.
2. For operation above 25°C free-air temperature, derate linearly at the rate of 9.3 mW/°C.
recommended operating conditions
MIN NOM MAX UNIT
pp
pp
VDD = 3 V 2.85 3 3.15
Suppl
y v
oltage, V
DD
(each suppl
y,
see Note 3)
VDD = 5 V 4.75 5 5.25
V
Input voltage, VI, (all inputs except VCOIN1, VCOIN2) 0 V
DD
V Output current, IO (each output) 0 ±2 mA VCO control voltage at each VCOIN1, VCOIN2 0.9 V
DD
V
p
VDD = 3 V 14 21
Lock frequenc
y,
(each VCO) (×1 output)
VDD = 5 V 22 50
MH
z
p
VDD = 3 V 7 10.5
Lock frequenc
y,
(each VCO) (×1/2 output)
VDD = 5 V 11 25
MH
z
VDD = 3 V 2.2 3.3 4.3
Bias resistor, (each BIAS), R
BIAS1,
R
BIAS2
VDD = 5 V 1.5 2.2 3.3
k
Operating temperature, T
A
–20 75 °C
NOTE 3: It is recommended that LOGIC V
DD1
and VCO V
DD1
or LOGIC V
DD2
and VCO V
DD2
should be at the same voltage and separated from
each other.
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VCO1, VCO2 electrical characteristics, V
DD
= 3 V, T
A
= 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
OH
High-level output voltage IOH = –2 mA 2.4 V
V
OL
Low-level output voltage IOL = 2 mA 0.3 V
V
IT
Input threshold voltage
SELECT1, SELECT2, VCOINHIBIT2, VCOINHIBIT1
0.9 1.5 2.1 V
I
I
Input current
SELECT1, SELECT2, VCOINHIBIT2, VCOINHIBIT1
VI = VDD or GND ±1 µA
Z
i(VCOIN)
Input impedance VCOIN2, VCOIN1 VCOIN = 1/2 V
DD
10 M
I
DD(INH)
VCO supply current (inhibit) (each chip) See Note 4 0.01 1 µA
I
DD(VCO)
VCO supply current (each chip) See Note 5 5 15 mA
NOTES: 4. The current into VCO VDD and LOGIC VDD when VCOINHIBIT = VDD, and the PFD is inhibited.
5. The current into VCO VDD and LOGIC VDD when VCOIN = 1/2 VDD, R
BIAS
= 3.3 k, VCOINHIBIT = GND, and the PFD is inhibited.
PFD1, PFD2 electrical characteristic, V
DD
= 3 V, T
A
= 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
OH
High-level output voltage IOH = –2 mA 2.7 V
V
OL
Low-level output voltage IOL = 2 mA 0.2 V
I
OZ
High-impedance output current
PFD INHIBIT = high, VO = VDD or GND
±1 µA
V
IH
High-level input voltage
FIN–A1, FIN–B1, FIN–A2, FIN–B2
2.7 V
V
IL
Low-level input voltage
FIN–A1, FIN–B1, FIN–A2, FIN–B2
0.5 V
V
IT
Input threshold voltage PFD INHIBIT2, PFD INHIBIT1 0.9 1.5 2.1 V
C
i
Input capacitance
FIN–A1, FIN–B1, FIN–A2, FIN–B2
5 pF
Z
i
Input impedance
FIN–A1, FIN–B1, FIN–A2, FIN–B2
10 M
I
DD(Z)
High-impedance state PFD supply current See Note 6 0.1 1 µA
I
DD(PFD)
PFD supply current See Note 7 0.1 1.5 mA
NOTES: 6. The current into LOGIC VDD, when FIN–A and FIN–B = GND, PFD INHIBIT= VDD, no load, and VCO OUT is inhibited.
7. The current into LOGIC VDD when FIN–A and FIN–B = 1 MHz with V
I(PP)
= 3 V rectangular wave, PFD INHIBIT = GND, no load,
and VCO OUT is inhibited.
Page 9
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HIGH-PERFORMANCE DUAL PHASE-LOCKED LOOP BUILDING BLOCK
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VCO1, VCO2 operating characteristics, V
DD
= 3 V, T
A
= 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
f
osc
Operating oscillation frequency
R
BIAS1, RBIAS2
= 3.3 k,
VCOIN1, VCOIN2 = 1/2 V
DD
15 19 23 MHz
t
s(fosc)
Time to stable oscillation See Note 8 10 µs
CL = 15 pF, See Figure 3 7 14
trRise time
CL = 50 pF, See Figure 3 14
ns
CL = 15 pF, See Figure 3 6 12
tfFall time
CL = 50 pF, See Figure 3 10
ns
Duty cycle at VCO OUT
R
BIAS1
, R
BIAS2
= 3.3 k,
VCOIN1, VCOIN2 = 1/2 V
DD
45% 50% 55%
α
(fosc)
Temperature coefficient of oscillation frequency
R
BIAS1, RBIAS2
= 3.3 k, VCOIN1, VCOIN2 = 1/2 VDD, TA = –20°C to 75°C
0.04 %/°C
k
SVS(fosc)
Supply voltage coefficient of oscillation frequency
R
BIAS1,
R
BIAS2
= 3.3 k, VCOIN1, VCOIN2 = 1.5 V, VDD = 2.85 V to 3.15 V
0.02 %/mV
Jitter absolute (see Note 9) R
BIAS1
= 3.3 k 100 ps
NOTES: 8. The time period to stabilize the VCO oscillation frequency after VCOINHIBIT is changed to a low level.
9. The LPF circuit is shown in Figure 28 with calculated values listed in Table 9. Jitter performance is highly dependent on circuit layout and external device characteristics. The jitter specification was made with a carefully designed PCB with no device socket.
PFD1, PFD2 operating characteristics, V
DD
= 3 V, T
A
= 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
f
max
Maximum operating frequency 20 MHz
t
PLZ
PFD output disable time from low level 21 50
t
PHZ
PFD output disable time from high level
23 50
ns
t
PZL
PFD output enable time to low level
See Figures 4 and 5 and Table 4
11 30
t
PZH
PFD output enable time to high level 10 30
ns
t
r
Rise time
p
2.3 10 ns
t
f
Fall time
C
L
= 15 pF,
See Figure 4
2.1 10 ns
Page 10
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VCO1, VCO2 electrical characteristics, V
DD
= 5 V, T
A
= 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
OH
High-level output voltage IOH = –2 mA 4 V
V
OL
Low-level output voltage IOL = 2 mA 0.5 V
V
IT
Input threshold voltage SELECT1, SELECT2,
VCOINHIBIT1, VCOINHIBIT2
1.5 2.5 3.5 V
I
I
Input current SELECT1, SELECT2,
VCOINHIBIT1, VCOINHIBIT2
VI = VDD or GND ±1 µA
Z
i(VCOIN)
Input impedance VCOIN1, VCOIN2 VCOIN = 1/2 V
DD
10 M
I
DD(INH)
VCO supply current (inhibit) (each chip) See Note 4 0.01 1 µA
I
DD(VCO)
VCO supply current (each chip) See Note 10 15 35 mA
NOTES: 4. The current into VCO VDD and LOGIC VDD when VCOINHIBIT = VDD, and the PFD is inhibited.
10. The current into VCO VDD and LOGIC VDD when VCOIN = 1/2 VDD, R
BIAS
= 2.2 k, VCOINHIBIT = GND, and the PFD is inhibited.
PFD1, PFD2 electrical characteristics, V
DD
= 5 V, T
A
= 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
OH
High-level output voltage IOH = 2 mA 4.5 V
V
OL
Low-level output voltage IOL = 2 mA 0.2 V
I
OZ
High-impedance output current
PFD INHIBIT1, PFD INHIBIT2 = high, VO = VDD or GND
±1 µA
V
IH
High-level input voltage
FIN–A1, FIN–B1, FIN–A2, FIN–B2
4.5 V
V
IL
Low-level input voltage
FIN–A1, FIN–B1, FIN–A2, FIN–B2
1 V
V
IT
Input threshold voltage
PFD INHIBIT2, PFD INHIBIT1
1.5 2.5 3.5 V
C
i
Input capacitance
FIN–A1, FIN–B1, FIN–A2, FIN–B2
5 pF
Z
i
Input impedance
FIN–A1, FIN–B1, FIN–A2, FIN–B2
10 M
I
DD(Z)
High-impedance state PFD supply current See Note 6 0.1 1 µA
I
DD(PFD)
PFD supply current (each chip) See Note 11 0.15 3 mA
NOTES: 6. The current into LOGIC VDD, when FIN–A and FIN–B = GND, PFD INHIBIT= VDD, no load, and VCO OUT is inhibited.
11. The current into LOGIC VDD when FIN–A and FIN–B = 1 MHz with V
I(PP)
= 5-V rectangular wave, PFD INHIBIT = GND, no load, and VCO OUT is inhibited.
Page 11
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VCO1, VCO2 operating characteristics, V
DD
= 5 V, T
A
= 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
f
osc
Operating oscillation frequency
R
BIAS1, RBIAS2
= 2.2 k,
VCOIN1, VCOIN2 = 1/2 V
DD
32 41 50 MHz
t
s(fosc)
Time to stable oscillation See Note 8 10 µs
CL = 15 pF, See Figure 3 5.5 10
trRise time
CL = 50 pF, See Figure 3 8
ns
CL = 15 pF, See Figure 3 5 10
tfFall time
CL = 50 pF, See Figure 3 6
ns
Duty cycle at VCO OUT
R
BIAS1, RBIAS2
= 2.2 k,
VCOIN1, VCOIN2 = 1/2 V
DD
45% 50% 55%
α
(fosc)
Temperature coefficient of oscillation frequency
R
BIAS1, RBIAS2
= 2.2 k, VCOIN1, VCOIN2 = 1/2 VDD, T
ope
= –20°C to 75°C
0.06 %/°C
k
SVS(fosc)
Supply voltage coefficient of oscillation fre­quency
R
BIAS1, RBIAS2
= 2.2 k, VCOIN1, VCOIN2 = 2.5 V, VDD = 4.75 V to 5.25 V
0.006 %/mV
Jitter absolute (see Note 9) R
BIAS1
= 3.3 k 100 ps
NOTES: 8. The time period to stabilize the VCO oscillation frequency after VCOINHIBIT is changed to a low level.
9. The LPF circuit is shown in Figure 28 with calculated values listed in T able 9. Jitter performance is highly dependent on circuit layout and external device characteristics. The jitter specification was made with a carefully designed PCB with no device socket.
PFD1, PFD2 operating characteristics, V
DD
= 5 V, T
A
= 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
f
max
Maximum operating frequency 40 MHz
t
PLZ
PFD output disable time from low level 21 40
t
PHZ
PFD output disable time from high level
20 40
ns
t
PZL
PFD output enable time to low level
See Figures 4 and 5 and Table 4
7.3 20
t
PZH
PFD output enable time to high level 6.5 20
ns
t
r
Rise time
p
2.3 10 ns
t
f
Fall time
C
L
= 15 pF,
See Figure 4
1.7 10 ns
Page 12
TLC2942 HIGH-PERFORMANCE DUAL PHASE-LOCKED LOOP BUILDING BLOCK
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POST OFFICE BOX 655303 DALLAS, TEXAS 75265
PARAMETER MEASUREMENT INFORMATION
t
r
t
f
90%
10%
90%
10%
VCO OUT1, VCO OUT2
Figure 3. VCO Output Voltage Waveform
50%
90%
10%
10%
50%
50%
t
PHZ
t
r
t
f
t
PLZ
V
DD
GND V
DD
GND
V
DD
GND
V
DD
GND V
DD
GND
V
DD
GND
FIN–A1,
FIN–A2
FIN–B1,
FIN–B2
PFD INHIBIT1,
PFD INHIBIT2
PFD OUT1,
PFD OUT2
(a) OUTPUT PULLDOWN
(see Figure 5 and Table 6)
(b) OUTPUT PULLUP
(see Figure 5 and Table 6)
FIN–A and FIN–B are for reference phase only, not for timing.
90%
t
PZL
t
PZH
GND
V
OH
50%
50%
50%
V
DD
V
OL
Figure 4. PFD Output Voltage Waveform
Table 6. PFD1 and PDF2 Output Test Conditions
PARAMETER R
L
C
L
S
1
S
2
t
PZH
t
PHZ
Open Close
t
r
p
t
PZL
1 k
15 pF
t
PLZ
Close Open
t
f
S1
S2
R
L
C
L
Test Point
PFD OUT
DUT
V
DD
Figure 5. PFD1 and PFD2 Output Test Conditions
Page 13
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HIGH-PERFORMANCE DUAL PHASE-LOCKED LOOP BUILDING BLOCK
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POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 6
10
0
40
20
01 2 3
30
VCO OSCILLATION FREQUENCY
vs
VCO CONTROL VOLTAGE
VI
(VCOIN)
– VCO Control Voltage – V
VDD = 3 V R
BIAS
= 2.2 k
–20°C
25°C
75°C
– VCO Oscillation Frequency – MHz
f
osc
Figure 7
60
40
0123
80
VCO OSCILLATION FREQUENCY
vs
VCO CONTROL VOLTAGE
100
45
20
VI
(VCOIN)
– VCO Control Voltage – V
–20°C
25°C
75°C
VDD = 5 V R
BIAS
= 1.5 k
– VCO Oscillation Frequency – MHz
f
osc
Figure 8
10
0
40
20
0123
30
VCO OSCILLATION FREQUENCY
vs
VCO CONTROL VOLTAGE
VI
(VCOIN)
– VCO Control Voltage – V
VDD = 3 V R
BIAS
= 3.3 k
25°C
75°C
–20°C
– VCO Oscillation Frequency – MHz
f
osc
Figure 9
40
0
01238045
20
60
VCO OSCILLATION FREQUENCY
vs
VCO CONTROL VOLTAGE
VDD = 5 V R
BIAS
= 2.2 k
25°C
75°C
VI
(VCOIN)
– VCO Control Voltage – V
–20°C
– VCO Oscillation Frequency – MHz
f
osc
Page 14
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POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 10
10
0
40
20
0123
30
VCO OSCILLATION FREQUENCY
vs
VCO CONTROL VOLTAGE
VI
(VCOIN)
– VCO Control Voltage – V
–20°C
25°C
75°C
VDD = 3 V R
BIAS
= 4.3 k
– VCO Oscillation Frequency – MHz
f
osc
Figure 11
40
0
01238045
20
60
VCO OSCILLATION FREQUENCY
vs
VCO CONTROL VOLTAGE
VI
(VCOIN)
– VCO Control Voltage – V
–20°C
25°C
75°C
VDD = 5 V R
BIAS
= 3.3 k
– VCO Oscillation Frequency – MHz
f
osc
Figure 12
20
15
10
30
25
2 2.5 3.5 4 4.5
– VCO Oscillation Frequency – MHz
VCO OSCILLATION FREQUENCY
vs
BIAS RESISTOR
VDD = 3 V VCOIN = 1/2 V
DD
TA = 25°C
f
osc
R
BIAS
– Bias Resistor – k
3
Figure 13
40
30
20
60
50
1.5 2 2.5 3.5
– VCO Oscillation Frequency – MHz
VCO OSCILLATION FREQUENCY
vs
BIAS RESISTOR
VDD = 5 V VCOIN = 1/2 V
DD
TA = 25°C
f
osc
R
BIAS
– Bias Resistor – k
3
Page 15
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HIGH-PERFORMANCE DUAL PHASE-LOCKED LOOP BUILDING BLOCK
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POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 14
0.2
0.1
2 2.5
3.3
0.3
TEMPERATURE COEFFICIENT OF
OSCILLATION FREQUENCY
vs
BIAS RESISTOR
0.4
4 4.5
C
°
– Temperature Coefficient of Oscillation
R
BIAS
– Bias Resistor – k
Frequency – % /
VDD = 3 V VCOIN = 1/2 V
DD
TA = –20°C to 75°C
3 3.5
(f
osc)
α
0
Figure 15
0.2
0.1
1.5
2.2
0.3
TEMPERATURE COEFFICIENT OF
OSCILLATION FREQUENCY
vs
BIAS RESISTOR
0.4
3.5
R
BIAS
– Bias Resistor – k
VDD = 5 V VCOIN = 1/2 V
DD
TA = –20°C to 75°C
2 2.5 3
C
°
– Temperature Coefficient of Oscillation
Frequency – % /
(f
osc)
α
0
Figure 16
20
18
16
2.85 3
22
VCO OSCILLATION FREQUENCY
vs
VCO SUPPLY VOLTAGE
24
3.15
VDD – VCO Supply Voltage – V
R
BIAS
= 3.3 k
VCOIN = 1.5 V TA = 25°C
– VCO Oscillation Frequency – MHz
f
osc
Figure 17
40
36
32
4.75 5
44
VCO OSCILLATION FREQUENCY
vs
VCO SUPPLY VOLTAGE
48
5.25
VDD – VCO Supply Voltage – V
R
BIAS
= 2.2 k
VCOIN = 1/2 V
DD
TA = 25°C
– VCO Oscillation Frequency – MHz f
osc
Page 16
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POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 18
0.03
0.02
0.01
2 2.5 3.5 4
0.04
SUPPLY VOLTAGE COEFFICIENT OF VCO
OSCILLATION FREQUENCY
vs
BIAS RESISTOR
0.05
4.5
R
BIAS
– Bias Resistor – k
VDD = 2.85 V to 3.15 V VCOIN = 1/2 V
DD
TA = 25°C
3
– Supply Voltage Coefficient of
Oscillation Frequency – %/V
k
SVS(fosc)
0
Figure 19
0.005
1.5 2.5 3
0.01
3.5
R
BIAS
– Bias Resistor – k
SUPPLY VOLTAGE COEFFICIENT OF VCO
OSCILLATION FREQUENCY
vs
BIAS RESISTOR
VDD = 4.75 V to 5.25 V VCOIN = 1/2 V
DD
TA = 25°C
2
0
– Supply Voltage Coefficient of
Oscillation Frequency – %/V
k
SVS(fosc)
Figure 20
20
15
10
30
25
2 2.5 3.5 4 4.5
Recommended Lock Frequency – MHz
RECOMMENDED LOCK FREQUENCY
(×1 OUTPUT)
vs
BIAS RESISTOR
R
BIAS
– Bias Resistor – k
VDD = 2.85 V to 3.15 V TA = –20°C to 75°C
3
Figure 21
40
30
20
10
1.5 2 2.5
50
60
3.5
R
BIAS
– Bias Resistor – k
Recommended Lock Frequency – MHz
RECOMMENDED LOCK FREQUENCY
(×1 OUTPUT)
vs
BIAS RESISTOR
VDD = 4.75 V to 5.25 V TA = –20°C to 75°C
3
Page 17
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HIGH-PERFORMANCE DUAL PHASE-LOCKED LOOP BUILDING BLOCK
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POST OFFICE BOX 655303 DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 22
Recommended Lock Frequency – MHz
RECOMMENDED LOCK FREQUENCY
(×1/2 OUTPUT)
vs
BIAS RESISTOR
R
BIAS
– Bias Resistor – k
10
7.5
5
15
12.5
2 2.5 3.5 4 4.5
3
VDD = 2.85 V to 3.15 V TA = –20°C to 75°C SELECT = V
DD
Figure 23
R
BIAS
– Bias Resistor – k
Recommended Lock Frequency – MHz
RECOMMENDED LOCK FREQUENCY
(×1/2 OUTPUT)
vs
BIAS RESISTOR
20
15
10
5
1.5 2 2.5
25
30
3.5
3
VDD = 4.75 V to 5.25 V TA = –20°C to 75°C SELECT = V
DD
Page 18
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APPLICATION INFORMATION
gain of VCO and PFD
Figure 24 is a block diagram of the PLL. The divider N value depends on the input frequency and the desired VCO output frequency according to the system application requirements. The K
p
and KV values are obtained from the operating characteristics of the device as shown in Figure
24. K
p
is defined from the phase detector VOL and
V
OH
specifications and the equation shown in
Figure 24(b). K
V
is defined from Figures 8, 9, 10,
and 11 as shown in Figure 24(c). The parameters for the block diagram with the
units are as follows:
K
V
: VCO gain (rad/s/V)
K
p
: PFD gain (V/rad)
K
f
: LPF gain (V/V)
K
N
: countdown divider gain (1/N)
external counter
When a large N counter is required by the application, there is a possibility that the PLL response becomes slow due to the counter response delay time. In the case of a high frequency application, the counter delay time should be accounted for in the overall PLL design.
R
BIAS
The external bias resistor sets the VCO center frequency with 1/2 V
DD
applied to the VCOIN terminal. However,
for optimum temperature performance, a resistor value of 3.3 k with a 3-V supply, or a resistor value of
2.5 k for a 5-V supply is recommended. For the most accurate results, a metal-film resistor is the better choice, but a carbon-compositiion resistor can be used with excellent results also. A 0.22-µF capacitor should be connected from the BIAS terminal to ground as close to the device terminals as possible.
hold-in range
From the technical literature, the maximum hold-in range for an input frequency step for the three types of filter configurations shown in Figure 25 is as follows:
DwH]
0.8
ǒ
K
p
Ǔǒ
K
V
Ǔǒ
Kf(R)
Ǔ
Where
K
f
() = the filter transfer function value at ω =
(1)
Divider
(KN = 1/N)
PFD (Kp)
VCO (KV)
LPF (Kf)
TLC2942
f
REF
V
OH
f
MAX
f
MIN
VIN
MIN
VIN
MAX
–2π 2ππ 0 π
Range of
Comparison
V
OH
V
OL
Kp =
VOH – V
OL
4π
KV =
2π(f
MAX
– f
MIN
)
VIN
MAX
– VIN
MIN
Figure 24. Example of a PLL Block Diagram
(a)
(c)(b)
Page 19
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HIGH-PERFORMANCE DUAL PHASE-LOCKED LOOP BUILDING BLOCK
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APPLICATION INFORMATION
low-pass-filter (LPF) configurations
Many excellent references are available that include detailed design information about LPFs and they should be consulted for additional information. Lag-lead filters or active filters are often used. Examples of LPFs are shown in Figure 25. When the active filter of Figure 25(c) is used, the reference should be applied to F
IN
-B because of the amplifier inversion. Also, in practical filter implementations, C2 is used as additional filtering at the VCO input. The value of C2 should be equal to or less than one-tenth the value of C1.
R1
C1
T1 = C1R1
(a) LAG FILTER
R1
C1
T1 = C1R1 T2 = C1R2
R2
(b) LAG-LEAD FILTER
R2
C1
R1
T1 = C1R1 T2 = C1R2
(c) ACTIVE FILTER
A
V
I
V
O
V
I
V
O
V
I
C2
V
O
C2
Figure 25. LPF Examples for PLL
the passive filter
The transfer function for the low-pass filter shown in Figure 25(b) is:
V
O
V
IN
+
1)s
@
T2
1)s
@
(
T1)T2
)
Where
T1+R1
@
C1 and T2+R2@C1
(2)
Using this filter makes the closed loop PLL system a type 1 second-order system. The response curves of this system to a unit step are shown in Figure 26.
the active filter
When using the active filter shown in Figure 25(c), the phase detector inputs must be reversed since the filter adds an additional inversion. Therefore, the input reference frequency should be applied to the F
IN
-B terminal
and the output of the VCO divider should be applied to the input reference terminal, F
IN
-A.
The transfer function for the active filter shown in Figure 25(c) is:
F(s)
+
1)s
@R2@
C1
s
@R1@
C1
(3)
Using this filter makes the closed loop PLL system a type 2 second-order system. The response curves of this system to a unit step are shown in Figure 27.
Page 20
TLC2942 HIGH-PERFORMANCE DUAL PHASE-LOCKED LOOP BUILDING BLOCK
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APPLICATION INFORMATION
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
012345678910111213
ω
nt
(t), Normalized Responseφ
2
= 0.1
z
= 0.2
z
= 0.3
z
= 0.4
z
= 0.5
z
= 0.6
z
= 0.7
z
= 0.8
z
= 1.0
z
= 1.5
z
= 2.0
z
ωnts = 4.5
Figure 26. Type 1 Second-Order Step Response
Page 21
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HIGH-PERFORMANCE DUAL PHASE-LOCKED LOOP BUILDING BLOCK
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POST OFFICE BOX 655303 DALLAS, TEXAS 75265
APPLICATION INFORMATION
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
012345678910111213
ω
nt
(t), Normalized Output Frequencyφ
0
ζ = 0.8
ζ = 0.1
ζ = 0.2
ζ = 0.3
ζ = 0.4
ζ = 0.5 ζ = 0.6
ζ = 0.7
ζ = 1.0
ζ = 2.0
Figure 27. Type 2 Second-Order Step Response
Page 22
TLC2942 HIGH-PERFORMANCE DUAL PHASE-LOCKED LOOP BUILDING BLOCK
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22
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
APPLICATION INFORMATION
basic design example
The following design example presupposes that the input reference frequency and the required frequency of the VCO are within the respective ranges of the device.
Assume the loop has to have a 100-µs settling time (t
s
) with a countdown divider N value = 8. Using the Type
1, second-order response curves of Figure 26, a value of 4.5 radians is selected for ω
nts
with a damping factor of 0.7. This selection gives a good combination for settling time, accuracy, and loop gain margin. The initial parameters are summarized in Table 7. The loop constants, K
V
and Kp, are calculated from the data sheet
specifications and Table 8 shows these values. The natural loop frequency is calculated as follows:
wnts+
4.5
Then
wn+
4.5
100ms
+
45 k-radiansńsec
Since
(4)
T able 7. Design Parameters
PARAMETER SYMBOL VALUE UNITS
Divider value N 8 Lockup time t 100 µs Radian value to selected lockup time ωnt 4.5 rad Damping factor ζ 0.7
Table 8. Device Specifications
PARAMETER SYMBOL VALUE UNITS
VCO gain 76.6 Mrad/V/s
f
MAX
70 MHz
f
MIN
K
V
20 MHz
VIN
MAX
5 V
VIN
MIN
0.9 V
PFD gain K
p
0.342357 V/rad
Using the low-pass filter in Figure 25(b) and divider N value, the transfer function for phase and frequency are shown in equations 5 and 6. Note that the transfer function for phase differs from the transfer function for frequency by only the divider N value. The difference arises from the fact that the feedback for phase is unity while the feedback for frequency is 1/N.
Hence, transfer function of Figure 24 (a) for phase is:
F
2(s)
F
1(s)
+
K
p
@
K
V
N
@
(
T1)T2
)
ȧ
ȧ ȧ ȧ
ȱ
Ȳ
1)s@T2
s2)
s
ƪ
1
)
K
p
@
K
V
@
T2
N@(T1)T2)
ƫ
)
K
p
@
K
V
N@(T1)T2)
ȧ
ȧ ȧ ȧ
ȳ
ȴ
(5)
Page 23
TLC2942
HIGH-PERFORMANCE DUAL PHASE-LOCKED LOOP BUILDING BLOCK
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POST OFFICE BOX 655303 DALLAS, TEXAS 75265
APPLICATION INFORMATION
and the transfer function for frequency is:
F
OUT(s)
F
REF(s)
+
K
p
@
K
V
(
T1)T2
)
ȧ
ȧ ȧ ȧ
ȱ
Ȳ
1)s@T2
s2)
s
@
ƪ
1
)
K
p
@
K
V
@
T2
N
@
(T1)T2)
ƫ
)
K
p
@
K
V
N
@
(T1)T2)
ȧ
ȧ ȧ ȧ
ȳ
ȴ
(6)
The standard two-pole denominator is D = s
2
+ 2 ζ ωn s + ω
n
2
and comparing the coefficients of the denominator
of equation 5 and 6 with the standard two-pole denominator gives the following results:
wn+
K
p
@
K
V
N
@
(T1)T2)
Ǹ
Solving for T1 + T2
T1)T2
+
K
p
@
K
V
N
@
w
2
n
(7)
and by using this value for T1 + T2 in equation 7 the damping factor is:
z
+
w
n
2
@
ǒ
T2
)
N
K
p
@
K
V
Ǔ
solving for T2:
T2
+
2
z
w
N
K
p
@
K
V
then by substituting for T2 in equation 7 and solving for T1 as given in equation 10:
T1
+
K
V
@
K
p
N
@
w
2
n
2
z
w
n
)
N
K
p
@
K
V
(8)
(9)
(10)
From the circuit constants and the initial design parameters then:
R2
+
ƪ
2
z
w
n
*
N
K
p
@
K
V
ƫ
1
C1
R1
+
ȧ
ȱ Ȳ
K
p
@
K
v
w
2
n
@
N
*
2
z
w
n
)
N
K
p
@
K
V
ȧ
ȳ ȴ
1
C1
(11)
(12)
Page 24
TLC2942 HIGH-PERFORMANCE DUAL PHASE-LOCKED LOOP BUILDING BLOCK
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POST OFFICE BOX 655303 DALLAS, TEXAS 75265
APPLICATION INFORMATION
The capacitor, C1, is usually chosen between 1 µF and 0.1 µF to allow for reasonable resistor values and physical capacitor size. In this example, C1 is chosen to be 0.1 µF and the corresponding R1 and R2 calculated values are listed in Table 9.
Table 9. Calculated Values
PARAMETER SYMBOL VALUE UNITS
Natural angular frequency ω
n
45000 rad/sec
K = (KV Kp)/N 3.277 Mrad/sec Lag-lead filter
Calculated value Nearest standard value
R1
15870 16000
Calculated value Nearest standard value
R2
308 300
Selected value C1 0.1 µF
Page 25
TLC2942
HIGH-PERFORMANCE DUAL PHASE-LOCKED LOOP BUILDING BLOCK
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POST OFFICE BOX 655303 DALLAS, TEXAS 75265
APPLICATION INFORMATION
The evaluation and operation schematic for the TLC2942I is shown in Figure 28.
1/2 f
osc
Phase
Comparator
AGND
DGND
DGND
DGND
REF IN
DV
DD
AV
DD
V
DD
LOGIC VDD (digital)
LOGIC GND (Digital)
SELECT
FIN–A
VCOINHIBIT
PFD INHIBIT
GND
VCO GND
VCOIN
BIAS
VCO V
DD
VCO
R1
R3
C1
R2C2
R4 R5 R6
S1 S2 S3
Divide
By
N
0.22 µF
1
2
3
4
5
6
7
38
37
36
35
34
33
8
FIN–B
R
BIAS
resistor
VCO OUT
PFD OUT
PLL2
PLL1
Figure 28. Evaluation and Operation Schematic
Page 26
TLC2942 HIGH-PERFORMANCE DUAL PHASE-LOCKED LOOP BUILDING BLOCK
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POST OFFICE BOX 655303 DALLAS, TEXAS 75265
APPLICATION INFORMATION
PCB layout considerations
The TLC2942I contains high frequency analog oscillators; therefore, very careful breadboarding and printed-circuit-board (PCB) layout is required for evaluation.
The following design recommendations benefit the TLC2942I user:
D
External analog and digital circuitry should be physically separated and shielded as much as possible to reduce system noise.
D
RF breadboarding or RF PCB techniques should be used throughout the evaluation and production process.
D
Wide ground leads or a ground plane should be used on the PCB layouts to minimize parasitic inductance and resistance. The ground plane is the better choice for noise reduction.
D
LOGIC VDD and VCO VDD should be separate PCB traces and connected to the best filtered supply point available in the system to minimize supply cross-coupling.
D
VCO VDD to GND and LOGIC VDD to GND should be decoupled with a 0.1-µF capacitor placed as close as possible to the appropriate device terminals.
D
The no-connection (NC) terminal on the package should be connected to GND.
Page 27
TLC2942
HIGH-PERFORMANCE DUAL PHASE-LOCKED LOOP BUILDING BLOCK
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27
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
MECHANICAL DATA
DB (R-PDSO-G**) PLASTIC SMALL-OUTLINE PACKAGE
4040065 /C 10/95
28 PIN SHOWN
Gage Plane
8,20 7,40
0,15 NOM
0,63
1,03
0,25
38
12,90
12,30
28
10,50
24
8,50
Seating Plane
9,907,90
30
10,50
9,90
0,38
5,60 5,00
15
0,22
14
A
28
1
2016
6,50
6,50
14
0,05 MIN
5,905,90
DIM
A MAX
A MIN
PINS **
2,00 MAX
6,90
7,50
0,65
M
0,15
0°–8°
0,10
3,30
8
2,70
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice. C. Body dimensions do not include mold flash or protrusion not to exceed 0,15. D. Falls within JEDEC MO-150
Page 28
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