Datasheet TISP4082F3SL, TISP4082F3D, TISP4082F3DR, TISP4072F3SL, TISP4072F3D Datasheet (Power Innovations)

TISP4072F3, TISP4082F3

SYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

PRODUCT INFORMATION

1

MARCH 1994 - REVISED SEPTEMBER 1997Copyright © 1997, Power Innovations Limited, UK

Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.

TELECOMMUNICATION SYSTEM SECONDARY PROTECTION

● Ion-Implanted Breakdown Region

Precise and Stable Voltage
Low Voltage Overshoot under Surge

● Planar Passivated Junctions

Low Off-State Current<10 µA

● Rated for International Surge Wave Shapes

● Surface Mount and Through-Hole Options

● UL Recognized, E132482

description

These low voltage symmetrical transient voltage
suppressor devices are designed to protect two
wire telecommunication applications against
transients caused by lightning strikes and a.c.
power lines. Offered in two voltage variants to
meet battery and protection requirements they
are guaranteed to suppress and withstand the
listed international lightning surges in both
polarities.

Transients are initially clipped by breakdown
clamping until the voltage rises to the breakover
level, which causes the device to crowbar. The
high crowbar holding current prevents d.c.
latchup as the current subsides.

DEVICE

V

DRM

V

V

(BO)

V

‘4072F3 58 72
‘4082F3 66 82

WAVE SHAPE STANDARD

I

TSP

A

2/10 µs FCC Part 68 80

8/20 µs ANSI C62.41 70
10/160 µs FCC Part 68 60
10/560 µs FCC Part 68 45

0.5/700 µs RLM 88 38

10/700 µs

FTZ R12

VDE 0433

CCITT IX K17/K20

50
50
50

10/1000 µs REA PE-60 35

PACKAGE PART # SUFFIX

Small-outline D

Small-outline taped

and reeled

DR

Single-in-line SL

These monolithic protection devices are
fabricated in ion-implanted planar structures to
ensure precise and matched breakover control
and are virtually transparent to the system in
normal operation

The small-outline 8-pin assignment has been
carefully chosen for the TISP series to maximise
the inter-pin clearance and creepage distances
which are used by standards (e.g. IEC950) to
establish voltage withstand ratings.

device symbol

T

SD4XAE

Terminals T and R correspond to the
alternative line designators of A and B

R R R R

T T T

1234

5

6 7

8

T

R

D PACKAGE SL PACKAGE

1

2

D PACKAGE

(TOP VIEW)

SL PACKAGE

(TOP VIEW)

MDXXAI

1
2
3
4

5

6

7

8

R
R
R
R

T

T

T

T

Specified ratings require the connection
of pins 1, 2, 3 and 4 for the T terminal.

1

2

T

R

MDXXAH

MD4XAA

TISP4072F3, TISP4082F3
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS

2

MARCH 1994 - REVISED SEPTEMBER 1997

PRODUCT INFORMATION

absolute maximum ratings

NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.

2. Initially the TISP must be in thermal equilibrium with 0°C < T

J

<70°C. The surge may be repeated after the TISP returns to its initial

conditions.

3. Above 70°C, derate linearly to zero at 150°C lead temperature.

NOTE 4: Further details on capacitance are given in the Applications Information section.

RATING SYMBOL VALUE UNIT

Repetitive peak off-state voltage (0°C < T

J

< 70°C)

‘4072F3
‘4082F3

V

DRM

± 58
± 66

V

Non-repetitive peak on-state pulse current(see Notes 1, 2 and 3)

I

TSP

A

1/2 µs(Gas tube differential transient, open-circuit voltage wave shape 1/2 µs) 120
2/10 µs(FCC Part 68, open-circuit voltage wave shape 2/10 µs) 80
8/20 µs(ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs) 70
10/160 µs(FCC Part 68, open-circuit voltage wave shape 10/160 µs) 60
5/200 µs(VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs) 50

0.2/310 µs(RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs) 38
5/310 µs(CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs) 50
5/310 µs(FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs) 50
10/560 µs(FCC Part 68, open-circuit voltage wave shape 10/560 µs) 45
10/1000 µs(REA PE-60, open-circuit voltage wave shape 10/1000 µs) 35

Non-repetitive peak on-state current(see Notes 2 and 3) D Package

I

TSM

4

A rms

50 Hz,1 s SL Package 6

Initial rate of rise of on-state current,Linear current ramp, Maximum ramp value < 38 A di

T

/dt 250 A/µs

Junction temperature T

J

-40 to +150 °C

Storage temperature range T

stg

-40 to +150 °C

electrical characteristics for the T and R terminals, TJ = 25°C

PARAMETER TEST CONDITIONS

TISP4072F3 TISP4082F3

UNIT

MIN TYP

MAX MIN TYP MAX

I

DRM

Repetitive peak off­state current

V

D

= ±V

DRM

, 0°C < TJ < 70°C ±10 ±10 µA

V

(BO)

Breakover voltage dv/dt = ±250 V/ms,R

SOURCE

= 300 Ω ±72 ±82 V

V

(BO)

Impulse breakover volt­age

dv/dt = ±1000 V/µs,R

SOURCE

= 50 Ω,

di/dt < 20 A/µs

±86 ±96 V

I

(BO)

Breakover current dv/dt = ±250 V/ms,R

SOURCE

= 300 Ω ±0.15 ±0.6 ±0.15 ±0.6 A

V

T

On-state voltage IT= ±5 A,tW= 100 µs ±3 ±3 V

I

H

Holding current di/dt = +/-30 mA/ms ±0.15 ±0.15 A

dv/dt

Critical rate of rise of
off-state voltage

Linear voltage ramp
Maximum ramp value < 0.85V

(BR)MIN

±5 ±5 kV/µs

I

D

Off-state current VD= ±50 V ±10 ±10 µA

C

off

Off-state capacitance

f = 100 kHz,V

d

= 100 mV

(see Note 4)

V

D

= 0, 82 140 82 140 pF

V

D

= -5 V 49 85 49 85 pF

V

D

= -50 V 25 40 25 40 pF

thermal characteristics

PARAMETER

TEST CONDITIONS

MIN TYP MAX UNIT

R

θJA

Junction to free air thermal resistance

P

tot

= 0.8 W,TA= 25°C

5 cm

2

, FR4 PCB

D Package 160

°C/W

SL Package 105

3

MARCH 1994 - REVISED SEPTEMBER 1997

TISP4072F3, TISP4082F3

SYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

PRODUCT INFORMATION

PARAMETER MEASUREMENT INFORMATIO

N

Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS

ALL MEASUREMENTS ARE REFERENCED TO THE R TERMINA

L

-v
I

(BR)

V

(BR)

V

(BR)M

V

DRM

I

DRM

V

D

I

H

I

T

V

T

I

TSM

I

TSP

V

(BO)

I

(BO)

I

D

Quadrant I

Switching

Characteristic

+v

+i

V

(BO)

I

(BO)

I

(BR)

V

(BR)

V

(BR)M

V

DRM

I

DRM

V

D

I

D

I

H

I

T

V

T

I

TSM

I

TSP

-i

Quadrant III

Switching

Characteristic

PMXXAA

TISP4072F3, TISP4082F3
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS

4

MARCH 1994 - REVISED SEPTEMBER 1997

PRODUCT INFORMATION

TYPICAL CHARACTERISTICS

R and T terminals

Figure 2. Figure 3.

Figure 4. Figure 5.

OFF-STATE CURRENT

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

I

D

- Off-State Current - µA

0·001

0·01

0·1

1

10

100

TC3LAF

JUNCTION TEMPERATURE

vs

VD = -50 V

VD = 50 V

NORMALISED BREAKDOWN VOLTAGES

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

Normalised Breakdown Voltages

0.9

1.0

1.1

1.2

TC3LAI

JUNCTION TEMPERA TURE

vs

V

(BO)

V

(BR)

V

(BR)M

Positive Polarity

Normalised to V

(BR)

I

(BR)

= 100 µA and 25°C

NORMALISED BREAKDOWN VOLTAGES

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

Normalised Breakdown Voltages

0.9

1.0

1.1

1.2

TC3LAJ

JUNCTION TEMPERATURE

vs

V

(BO)

V

(BR)

V

(BR)M

Negative Polarity

Normalised to V

(BR)

I

(BR)

= 100 µA and 25°C

ON-STATE CURRENT

VT - On-State Voltage - V

2 3 4 5 6 7 8 91 10

I

T

- On-State Current - A

1

10

100

TC3MAL

ON-STATE VOLTAGE

vs

-40°C

150°C

25°C

5

MARCH 1994 - REVISED SEPTEMBER 1997

TISP4072F3, TISP4082F3

SYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

PRODUCT INFORMATION

TYPICAL CHARACTERISTICS

R and T terminals

Figure 6. Figure 7.

Figure 8. Figure 9.

HOLDING CURRENT & BREA KOVER CURRENT

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

I

H

, I

(BO)

- Holding Current, Breakover Current - A

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

0.1

1.0

TC3LAH

JUNCTION TEMPERA TURE

vs

I

(BO)

I

H

NORMALISED B REAKOVER VOLTAGE

di/dt - Rate of Rise of Principle Current - A/µs

0·001 0·01 0·1 1 10 100

Normalised Breakover Voltage

1.0

1.1

1.2

1.3

TC3LAB

Positive

RATE OF RISE OF PRINCIPLE CURRENT

vs

Negative

OFF-STATE CAPACITANCE

Terminal Voltage - V

0·1 1 10

Off-State Capacitance - pF

10

100

TC3LAE

50

TERMINAL VOLTA GE

vs

Positive Bias

Negative Bias

OFF-STATE CAPACITANCE

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

Off-State Capacitance - pF

10

100

TC3LAD

JUNCTION TEMPERATURE

vs

500

Terminal Bias = 0

Terminal Bias = 50 V

Terminal Bias = -50 V

TISP4072F3, TISP4082F3
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS

6

MARCH 1994 - REVISED SEPTEMBER 1997

PRODUCT INFORMATION

THERMAL INFORMATION

TYPICAL CHARACTERISTICS

R and T terminals

Figure 10.

Figure 11. Figure 12.

SURGE CURRENT

Decay Time - µs

10 100 1000

Maximum Surge Current - A

10

100

1000

TC3LAA

vs

DECAY TIME

2

MAXIMUM NON-RECURRING 50 Hz CURRENT

t - Current Duration - s

0·1 1 10 100 1000

I

TRMS

- Maximum Non-Recurrent 50 Hz Current - A
1

10

vs

CURRENT DURATION

D Package

SL Package

TI4LAA

V

GEN

= 250 Vrms

R

GEN

= 10 to 150 ΩΩ

THERMAL RESPONSE

t - Power Pulse Duration - s

0·0001 0·001 0·01 0·1 1 10 100 1000

Z

θ

θJ

Α

Α

- Transient Thermal Impedance - °C/W

1

10

100

D Package

SL Package

TI3MAC

7

MARCH 1994 - REVISED SEPTEMBER 1997

TISP4072F3, TISP4082F3

SYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

PRODUCT INFORMATION

APPLICATIONS INFORMATION

electrical characteristics

The electrical characteristics of a TISP are strongly dependent on junction temperature, TJ. Hence a
characteristic value will depend on the junction temperature at the instant of measurement. The values given
in this data sheet were measured on commercial testers, which generally minimise the temperature rise
caused by testing. Application values may be calculated from the parameters’ temperature curves, the power
dissipated and the thermal response curve (Zθ).

lightning surge

wave shape notation

Most lightning tests, used for equipment verification, specify a unidirectional sawtooth waveform which has an
exponential rise and an exponential decay. Wave shapes are classified in terms of peak amplitude (voltage
or current), rise time and a decay time to 50% of the maximum amplitude. The notation used for the wave
shape is amplitude, rise time/decay time. A 50A, 5/310 µs wave shape would have a peak current value of
50 A, a rise time of 5 µs and a decay time of 31 0 µs. The TISP surge current graph comprehends the wave
shapes of commonly used surges.

generators

There are three categories of surge generator type, single wave shape, combination wave shape and circuit
defined. Single wave shape generators have essentially the same wave shape for the open circuit voltage
and short circuit current (e.g. 10/1000 µs open circuit voltage and short circuit current). Combination
generators have two wave shapes, one for the open circuit voltage and the other for the short circuit current
(e.g. 1.2/50 µs open circuit voltage and 8/20 µs short circuit current) Circuit specified generators usually
equate to a combination generator, although typically only the open circuit voltage waveshape is referenced
(e.g. a 10/700 µs open circuit voltage generator typically produces a 5/31 0 µs short circuit current). If the
combination or circuit defined generators operate into a finite resistance the wave shape produced is
intermediate between the open circuit and short circuit values.

current rating

When the TISP switches into the on-state it has a very low impedance. As a result, although the surge wave
shape may be defined in terms of open circuit voltage, it is the current wave shape that must be used to
assess the required TISP surge capability. As an example, the CCITT IX K17 1.5 kV, 10/700 µs surge is
changed to a 38 A, 5/310 µs waveshape when driving into a short circuit. Thus the TISP surge current
capability, when directly connected to the generator, will be found for the CCITT IX K17 waveform at 310 µs
on the surge graph and not 700 µs. Some common short circuit equivalents are tabulated below:

Any series resistance in the protected equipment will reduce the peak circuit current to less than the
generators’ short circuit value. A 2 kV open circuit voltage, 50 A short circuit current generator has an
effective output impedance of 40 Ω (2000/50). If the equipment has a series resistance of 25 Ω then the
surge current requirement of the TISP becomes 31 A (2000/65) and not 50 A.

STANDARD OPEN CIRCUIT

VOLTAGE

SHORT CIRCUIT

CURRENT

CCITT IX K17 1.5 kV, 10/700 µs 38 A, 5/310 µs
CCITT IX K20 1 kV, 10/700 µ s 25 A, 5/310 µs

RLM88 1.5 kV, 0.5/700 µs 38 A, 0.2/310 µs

VDE 0433 2.0 kV, 10/700 µs 50 A, 5/200 µs

FTZ R12 2.0 kV, 10/700 µ s 50 A, 5/310 µs

TISP4072F3, TISP4082F3
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS

8

MARCH 1994 - REVISED SEPTEMBER 1997

PRODUCT INFORMATION

protection voltage

The protection voltage, (V

(BO)

), increases under lightning surge conditions due to thyristor regeneration.
This increase is dependent on the rate of current rise, di/dt, when the TISP is clamping the voltage in its
breakdown region. The V

(BO)

value under surge conditions can be estimated by multiplying the 50 Hz rate

V

(BO)

(250 V/ms) value by the normalised increase at the surge’s di/dt (Figure 7.) . An estimate of the di/dt

can be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance.

As an example, the CCITT IX K17 1.5 kV, 10/700 µs surge has an average dv/dt of 15 0 V/µs, but, as the rise
is exponential, the initial dv/dt is higher, being in the region of 450 V/µs. The instantaneous generator output
resistance is 25 Ω. If the equipment has an additional series resistance of 20 Ω, the total series resistance
becomes 45 Ω. The maximum di/dt then can be estimated as 450/45 = 10 A/µs. In practice the
measureddi/dt and protection voltage increase will be lower due to inductive effects and the finite slope

resistance of the TISP breakdown region.

capacitance

off-state capacitance

The off-state capacitance of a TISP is sensitive to junction temperature, TJ, and the bias voltage, comprising
of the dc voltage, V

D

, and the ac voltage, Vd. All the capacitance values in this data sheet are measured with
an ac voltage of 100 mV. The typical 25°C variation of capacitance value with ac bias is shown in Figure 13
When V

D

>> Vd the capacitance value is independent on the value of Vd. The capacitance is essentially

constant over the range of normal telecommunication frequencies.

Figure 13.

APPLICATIONS INFORMATION

NORMALISED CAPACITANCE

Vd - RMS AC Test Voltage - mV

1 10 100 1000

Normalised Capacitance

0.70

0.75

0.80

0.85

0.90

0.95

1.00

1.05

AIXXAA

Normalised to Vd = 100 mV
DC Bias, VD = 0

RMS AC TEST VOLTAGE

vs

9

MARCH 1994 - REVISED SEPTEMBER 1997

TISP4072F3, TISP4082F3

SYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

PRODUCT INFORMATION

D008
plastic small-outline package

This small-outline package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.

MECHANICAL DATA

5,21 (0.205)
4,60 (0.181)

NOTES: A. Leads are within 0,25 (0.010) radius of true position at maximum material condition.
B. Body dimensions do not include mold flash or protrusion.
C. Mold flash or protrusion shall not exceed 0,15 (0.006).

D. Lead tips to be planar within ±0,051 (0.002).

1,75 (0.069)
1,35 (0.053)

6,20 (0.244)
5,80 (0.228)

5,00 (0.197)
4,80 (0.189)

D008

8

7 6 5

432

1

4,00 (0.157)
3,81 (0.150)

7° NOM
3 Places

7° NOM
4 Places

0,51 (0.020)
0,36 (0.014)

8 Places

Pin Spacing

1,27 (0.050)

(see Note A)

6 Places

1,12 (0.044)
0,51 (0.020)

4° ± 4°

0,79 (0.031)
0,28 (0.011)

0,203 (0.008)
0,102 (0.004)

ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES

Designation per JEDEC Std 30:

PDSO-G8

0,50 (0.020)
0,25 (0.010)

x 45°NOM

0,229 (0.0090)
0,190 (0.0075)

MDXXAA

TISP4072F3, TISP4082F3
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS

10

MARCH 1994 - REVISED SEPTEMBER 1997

PRODUCT INFORMATION

SL002
2-pin plastic single-in-line package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.

MECHANICAL DATA

10,2 (0.400) MAX

8,31 (0.327)

MAX

4,267 (0.168)

MIN

1,500 (0.059) MAX

2 Places

21

5,08 (0.200) T.P.

(see Note A)

0,711 (0.028)
0,559 (0.022)

2 Places

0,356 (0.014)
0,203 (0.008)

2 Places

12,9 (0.492)

MAX

6,60 (0.260)
6,10 (0.240)

4,57 (0.180)

MAX

ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES

SL002

NOTES: A. Each pin centerline is located within 0,25 (0.010) of its true longitudinal position.

B. Body molding flash of up to 0,15 (0.006) may occur in the package lead plane.

Index

Dot

MDXXAC

11

MARCH 1994 - REVISED SEPTEMBER 1997

TISP4072F3, TISP4082F3

SYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

PRODUCT INFORMATION

D008
tape dimensions

MECHANICAL DATA

D008 Package (8 pin SOIC) Single-Sprocket Tape

ALL LINEAR DIMENSIONS IN MILLIMETERS

6,30

6,50

11,70

12,305,45

5,55

1,50

1,60

3,90

4,10

7,95

8,05

1,95

2,05

0,8 MIN.

0 MIN.

0,40

2,0

2,2

Direction of Feed

ø 1,5 MIN.

Carrier Tape

Embossment

Cover
Tape

MDXXAT

NOTES: A. Taped devices are supplied on a reel of the following dimensions:­ Reel diameter: 330 +0,0/-4,0 mm

Reel hub diameter: 100 ±2,0 mm
Reel axial hole: 13,0 ±0,2 mm

B. 2500 devices are on a reel.

TISP4072F3, TISP4082F3
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS

12

MARCH 1994 - REVISED SEPTEMBER 1997

PRODUCT INFORMATION

IMPORTANT NOTICE

Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.

PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.

PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.

Copyright © 1997, Power Innovations Limited