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DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
NOVEMBER 1986 - REVISED SEPTEMBER 1997Copyright © 1997, Power Innovations Limited, UK
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
TISP2290
● Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
V
VV
(Z)
DEVICE
‘2290 200 290
● Planar Passivated Junctions
(BO)
V
Low Off-State Current<10 µA
● Rated for International Surge Wave Shapes
I
WAVE SHAPE STANDARD
8/20 µs ANSI C62.41 150
10/160 µs FCC Part 68 60
10/560 µs FCC Part 68 45
0.2/310 µs RLM 88 38
FTZ R12
10/700 µs
10/1000 µs REA PE-60 50
● UL Recognized, E132482
VDE 0433
CCITT IX K17/K20
TSP
A
50
50
50
TO-220 PACKAGE
(TOP VIEW)
A(T)
C(G)
B(R)
Pin 2 is in electrical contact with the mounting base.
1
2
3
device symbol
MDXXANA
description
The TISP2290 is designed specifically for
telephone equipment protection against lightning
and transients induced by a.c. power lines.
These devices will supress voltage transients
between terminals A and C, B and C, and A and
B.
Transients are initially clipped by zener action
until the voltage rises to the breakover level,
which causes the device to crowbar. The high
crowbar holding current prevents d.c. latchup as
the transient subsides.
These monolithic protection devices are
fabricated in ion-implanted planar structures to
ensure precise and matched breakover control
and are virtually transparent to the system in
normal operation.
PRODUCT INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
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TISP2290
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
NOVEMBER 1986 - REVISED SEPTEMBER 1997
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING SYMBOL VALUE UNIT
Non-repetitive peak on-state pulse current(see Notes 1, 2 and 3)
8/20 µs(ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs) 150
10/160 µs(FCC Part 68, open-circuit voltage wave shape 10/160 µs) 60
5/200 µs(VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs) 50
0.2/310 µs(RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs) 38
5/310 µs(CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs) 50
5/310 µs(FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs) 50
10/560 µs(FCC Part 68, open-circuit voltage wave shape 10/560 µs) 45
10/1000 µs(REA PE-60, open-circuit voltage wave shape 10/1000 µs) 50
Non-repetitive peak on-state current, 50 Hz, 2.5 s(see Notes 1 and 2) I
Initial rate of rise of on-state current,Linear current ramp, Maximum ramp value < 38 A di
Junction temperature T
Operating free - air temperature range 0 to 70 °C
Storage temperature range T
Lead temperature 1.5 mm from case for 10 s T
NOTES: 1. Above 70°C, derate linearly to zero at 150°C case temperature
2. This value applies when the initial case temperature is at (or below) 70°C. The surge may be repeated after the device has
returned to thermal equilibrium.
3. Most PTT’s quote an unloaded voltage waveform. In operation the TISP essentially shorts the generator output. The resulting
loaded current waveform is specified.
.
electrical characteristics for the A and B terminals, TJ = 25°C
I
TSP
TSM
/dt 250 A/µs
T
J
stg
lead
10 A rms
150 °C
-40 to +150 °C
260 °C
A
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Reference zener
V
Z
voltage
Off-state leakage
I
D
current
Off-state capacitance VD = 0 f = 1 kHz (see Note 4) 40 100 pF
C
off
= ± 1mA ± 200 V
I
Z
= ± 50 V ± 10 µA
V
D
NOTE 4: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The third terminal is
connected to the guard terminal of the bridge.
electrical characteristics for the A and C or the B and C terminals, TJ = 25°C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Reference zener
V
Z
voltage
Temperature coefficient
∝
V
Z
of reference voltage
Breakover voltage (see Notes 5 and 6) ± 290 V
V
(BO)
Breakover current (see Note 5) ± 0.15 ± 0.6 A
I
(BO)
Peak on-state voltage IT = ± 5 A (see Notes 5 and 6) ± 1.9 ± 3 V
V
TM
Holding current (see Note 5) ± 150 mA
I
H
Critical rate of rise of
dv/dt
off-state voltage
Off-state leakage
I
D
current
Off-state capacitance VD = 0 f = 1 kHz (see Note 4) 110 200 pF
C
off
NOTES: 5. These parameters must be measured using pulse techniques, t
6. These parameters are measured with voltage sensing contacts seperate from the current carrying contacts located within 3.2 mm
(0.125 inch) from the device body.
7. Linear rate of rise, maximum voltage limited to 80 % V
= ± 1mA ± 200 V
I
Z
0.1 %/
(see Note 7)
= ± 50 V ± 10 µA
V
D
= 100 µs, duty cycle ≤ 2%.
w
(minimum)..
Z
± 5 kV/µs
o
C
PRODUCT INFORMATION
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DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
NOVEMBER 1986 - REVISED SEPTEMBER 1997
PARAMETER MEASUREMENT INFORMATION
TISP2290
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR ANY PAIR OF TERMINALS
thermal characteristics
Junction to free air thermal resistance 62.5 °C/W
R
θJA
The high level characteristics for terminals A and B are not guaranteed.
PARAMETER MIN TYP MAX UNIT
PRODUCT INFORMATION
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TISP2290
V
, V
- Zener Voltage, Breakover Voltage - V
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
NOVEMBER 1986 - REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
A and C, or B and C terminals
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
1000
100
- On-State Current - A
10
T
I
1
1 10 100
VT - On-State Voltage - V
Figure 2. Figure 3.
TCS2HAA
ZENER VOLTAGE & BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE
290
280
270
260
250
240
230
220
(BO)
210
Z
200
-25 0 25 50 75 100 125 150
TJ - Junction Temperature - °C
V
(BO)
V
TCS2HAB
Z
PRODUCT INFORMATION
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DUAL SYMMETRICAL TRANSIENT
I
, I
- Holding Current, Breakover Current - A
TYPICAL CHARACTERISTICS
A and C, or B and C terminals
TISP2290
VOLTAGE SUPPRESSORS
NOVEMBER 1986 - REVISED SEPTEMBER 1997
HOLDING CURRENT & BREAKOVER CURRENT
vs
JUNCTION TEMPERATURE
1
I
(BO)
I
H
0·1
(BO)
H
0·01
-25 0 25 50 75 100 125 150
TJ - Junction Temperature - °C
TCS2HAC
Figure 4. Figure 5.
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
10
VD = ±50 V
1
0·1
- Off-State Current - µA
D
I
0·01
0·001
-25 0 25 50 75 100 125 150
TJ - Junction Temperature - °C
TCS2HAD
ON-STATE VOLTAGE
vs
JUNCTION TEMPERATURE
3.0
IT = ±5A
2.5
2.0
1.5
- On-State Voltage - V
1.0
T
V
0.5
0.0
-25 0 25 50 75 100 125 150
TJ - Junction Temperature - °C
Figure 6. Figure 7.
TCS2HAE
NORMALISED BREAKOVER VOLTAGE
vs
RATE OF RISE OF PRINCIPLE CURRENT
1.4
1.3
1.2
1.1
Normalised Breakover Voltage
1.0
0·001 0·01 0·1 1 10 100
di/dt - Rate of Rise of Principle Current - A/µs
TCS2HAI
PRODUCT INFORMATION
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TISP2290
Off-State Capacitance - pF
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
NOVEMBER 1986 - REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
A and C, or B and C terminals
OFF-STATE CA PACITANCE
vs
TERMINA L VOLTAGE (POSITIVE)
1000
Third terminal bias = -50 V
100
Third terminal bias = 0 V
10
Third terminal bias = +50 V
1
0·1 1 10 100
Terminal Voltage (Positive) - V
Figure 8. Figure 9.
TCS2HAK
OFF-STATE CA PACITANCE
vs
TERMINAL VOLTA GE (NEGATIVE)
1000
Third terminal bias = -50 V
100
Third terminal bias = 0 V
10
Off-State Capacitance - pF
Third terminal bias = +50 V
1
0·1 1 10 100
Terminal Voltage (Negative) - V
TCS2HAL
Maximum Surge Current - A
1000
100
10
SURGE CURRENT
vs
DECAY TIME
2
10 100 1000
Decay Time - µs
TCS2HAO
Figure 10.
PRODUCT INFORMATION
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DUAL SYMMETRICAL TRANSIENT
TYPICAL CHARACTERISTICS
A and B terminals
TISP2290
VOLTAGE SUPPRESSORS
NOVEMBER 1986 - REVISED SEPTEMBER 1997
ZENER VOLTAGE & BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE
290
280
270
260
250
240
230
- Zener Voltage, Breakover Voltage - V
220
(BO)
, V
210
Z
V
200
-25 0 25 50 75 100 125 150
TJ - Junction Temperature - °C
V
(BO)
V
Z
Figure 11. Figure 12.
TCS2HAF
HOLDING CURRENT & BREAKOVER CURRENT
vs
JUNCTION TEMPERATURE
1
I
(BO)
I
0·1
- Holding Current, Breakover Current - A
(BO)
, I
H
I
0·01
-25 0 25 50 75 100 125 150
H
TJ - Junction Temperature - °C
TCS2HAG
I
H
I
(BO)
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
10
VD = ±50 V
V
D
1
0·1
- Off-State Current - µA
D
I
0·01
0·001
-25 0 25 50 75 100 125 150
TJ - Junction Temperature - °C
Figure 13.
TCS2HAH
PRODUCT INFORMATION
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TISP2290
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
NOVEMBER 1986 - REVISED SEPTEMBER 1997
TYPICAL CHARACTERISTICS
A and B terminals
NORMALISED BREAKOVER VOLTAGE
vs
RATE OF RISE OF PRINCIPLE CURRENT
2.5
2.3
2.0
1.8
1.5
Normalised Breakover Voltage
1.3
1.0
0·001 0·01 0·1 1 10 100
di/dt - Rate of Rise of Principle Current - A/µs
Figure 14. Figure 15.
TCS2HAJ
OFF-STATE CAPACITANCE
vs
TERMINA L VOLTAGE (POSITIVE)
1000
100
Third terminal bias = -50 V
10
Off-State Capacitance - pF
Third terminal bias = +50 V
1
0·1 1 10 100
Terminal Voltage (Positive) - V
Third terminal bias = 0 V
TCS2HAM
OFF-STATE CAPA CITANCE
vs
TERMINAL VOLTA GE (NEGA TIVE)
1000
100
Third terminal bias = -50 V
10
Off-State Capacitance - pF
1
Third terminal bias = 0 V
Third terminal bias = +50 V
0·1 1 10 100
Terminal Voltage (Negative) - V
Figure 16.
TCS2HAN
PRODUCT INFORMATION
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Page 9
100
MAXIMUM NON-RECURRENT 50Hz CURREN
T
THERMAL RESPONSE
THERMAL INFORMATION
TIS2MAA
10
TISP2290
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
NOVEMBER 1986 - REVISED SEPTEMBER 1997
vs
CURRENT DURATION
TIS2MAB
10
1
- Transient Thermal Impedance - °C/W
θ
θJA
Z
0·1
0·0001 0·001 0·01 0·1 1 10 100 1000
t - Power Pulse Duration - s
Figure 17. Figure 18.
FREE AIR TEMPERATURE
100
80
1
0·1
- Maximum Non-Recurrent 50Hz Current - A
RMS
I
0·01
0·01 0·1 1 10 100
DERATING CURVE
V
= 250 V
GEN
R
= 20 TO 1000 ohms
GEN
T
= 70°C
AMB
RMS
t - Current Duration - s
TIS2MAC
60
40
Percent of Rated Power - %
20
0 25 50 75 100 125 150
TA - Free Air Temperature - °C
PRODUCT INFORMATION
Figure 19.
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TISP2290
Version 1, 18.0 mm. Version 2, 17.6 mm.
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
NOVEMBER 1986 - REVISED SEPTEMBER 1997
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
3,96
ø
3,71
see Note B
see Note C
0,97
0,61
10,4
10,0
1 2 3
1,70
1,07
2,74
2,34
5,28
4,88
2,95
2,54
6,1
3,5
4,70
4,20
1,32
1,23
6,6
6,0
15,90
14,55
14,1
12,7
0,64
0,41
2,90
2,40
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
PRODUCT INFORMATION
10
VERSION 2 VERSION 1
ALL LINEAR DIMENSIONS IN MILLIMETERS
MDXXBE
Page 11
TISP2290
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
NOVEMBER 1986 - REVISED SEPTEMBER 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited
PRODUCT INFORMATION
11
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