Datasheet TISP1072F3D, TISP1082F3SL, TISP1082F3DR, TISP1082F3D, TISP1072F3SL Datasheet (Power Innovations)

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Page 1

TISP1072F3, TISP1082F3

DUAL ASYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.

TELECOMMUNICATION SYSTEM SECONDARY PROTECTION

● Ion-Implanted Breakdown Region

Precise and Stable Voltage Low Voltage Overshoot under Surge

● Planar Passivated Junctions

Low Off-State Current<10 µA

● Rated for International Surge Wave Shapes

● Surface Mount and Through-Hole Options

● UL Recognized, E132482

description

These dual asymmetrical transient voltage suppressors are designed for the overvoltage protection of ICs used for the SLIC (Subscriber Line Interface Circuit) function. The IC line driver section is typically powered with 0 V and a negative supply. The TISP1xxxF3 limits voltages that exceed these supply rails and is offered in two voltage variants to match typical negative supply voltage values.

High voltages can occur on the line as a result of exposure to lightning strikes and a.c. power surges. Negative transients are initially limited by breakdown clamping until the voltage rises to the

DEVICE

DRM

(BO)

‘1072F3 - 58 - 72 ‘1082F3 - 66 - 82

WAVE SHAPE STANDARD

TSP

2/10 µs FCC Part 68 80

8/20 µs ANSI C62.41 70 10/160 µs FCC Part 68 60 10/560 µs FCC Part 68 45

0.5/700 µs RLM 88 38

10/700 µs

FTZ R12

VDE 0433

CCITT IX K17/K20

50 50 50

10/1000 µs REA PE-60 35

PACKAGE PART # SUFFIX

Small-outline D

Small-outline taped

and reeled

Plastic DIP P

Single-in-line SL

breakover level, which causes the device to crowbar. The high crowbar holding current prevents d.c. latchup as the current subsides. Positive transients are limited by diode forward conduction. These protectors are guaranteed to suppress and withstand the listed international lightning surges on any terminal pair

device symbol

D PACKAGE

(TOP VIEW)

P PACKAGE

(TOP VIEW)

SL PACKAGE

(TOP VIEW)

MDXXAE

1 2 3 4 5

8 G

G G G

NC - No internal connection

1 2

3 4 5

G G

Specified T terminal ratings require connection of pins 1 and 8. Specified R terminal ratings require connection of pins 4 and 5.

MDXXAF

1 2 3

T G R

MDXXAG MD1XAA

SD1XAA

Terminals T, R and G correspond to the alternative line designators of A, B and C

Page 2

TISP1072F3, TISP1082F3 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

SEPTEMBER 1993 - REVISED SEPTEMBER 1997

PRODUCT INFORMATION

description (continued)

These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation

The small-outline 8-pin assignment has been carefully chosen for these devices to maximise the inter-pin clearance and creepage distances which are used by standards (e.g. IEC950) to establish voltage withstand ratings.

absolute maximum ratings

NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.

2. Initially the TISP must be in thermal equilibrium with 0°C < T

<70°C. The surge may be repeated after the TISP returns to its initial

conditions.

3. Above 70°C, derate linearly to zero at 150°C lead temperature.

NOTE 4: Further details on capacitance are given in the Applications Information section.

RATING SYMBOL VALUE UNIT

Repetitive peak off-state voltage( 0°C < T

<70°C)

‘1072F3 ‘1082F3

DRM

-58

-66

Non-repetitive peak on-state pulse current(see Notes 1, 2 and 3)

TSP

1/2 µs(Gas tube differential transient, open-circuit voltage wave shape 1/2 µs) 120 2/10 µs(FCC Part 68, open-circuit voltage wave shape 2/10 µs) 80 8/20 µs(ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs) 70 10/160 µs(FCC Part 68, open-circuit voltage wave shape 10/160 µs) 60 5/200 µs(VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs) 50

0.2/310 µs(RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs) 38 5/310 µs(CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs) 50 5/310 µs(FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs) 50 10/560 µs(FCC Part 68, open-circuit voltage wave shape 10/560 µs) 45 10/1000 µs(REA PE-60, open-circuit voltage wave shape 10/1000 µs) 35

Non-repetitive peak on-state current(see Notes 2 and 3) D Package

TSM

A rms

50 Hz,1 s

P Package 6

SL Package 6

Initial rate of rise of on-state current,Linear current ramp, Maximum ramp value < 38 A di

/dt 250 A/µs

Junction temperature T

-40 to +150 °C

Storage temperature range T

stg

-40 to +150 °C

electrical characteristics for the T and R terminals, 25°C (unless otherwise noted)

PARAMETER TEST CONDITIONS

TISP1072F3 TISP1082F3

UNIT

MIN TYP

MAX MIN TYP MAX

DRM

Repetitive peak offstate current

= ±V

DRM

, 0°C < TJ<70°C ±10 ±10 µA

Off-state current VD= ±50 V ±10 ±10 µA

off

Off-state capacitance

f = 100 kHz,V

= 100 mV

= 0

(see Note 4)

D Package 0.08 0.5 0.08 0.5 pF P Package 0.06 0.4 0.06 0.4 pF SL Package 0.02 0.3 0.02 0.3 pF

Page 3

SEPTEMBER 1993 - REVISED SEPTEMBER 1997

TISP1072F3, TISP1082F3

DUAL ASYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

PRODUCT INFORMATION

NOTE 5: Further details on capacitance are given in the Applications Information section.

electrical characteristics for the T and G and R and G terminals, 25°C (unless otherwise noted)

PARAMETER TEST CONDITIONS

TISP1072F3 TISP1082F3

UNIT

MIN TYP

MAX MIN TYP MAX

DRM

Repetitive peak offstate current

= V

DRM

, 0°C < TJ<70°C -10 -10 µA

(BO)

Breakover voltage dv/dt = -250 V/ms,R

SOURCE

= 300 Ω -72 -82 V

(BO)

Impulse breakover voltage

dv/dt = -1000 V/µs,R

SOURCE

= 50 Ω,

di/dt < -20 A/µs

-78 -92 V

(BO)

Breakover current dv/dt = -250 V/ms,R

SOURCE

= 300 Ω -0.1 -0.6 -0.1 -0.6 A

FRM

Peak forward recovery voltage

dv/dt = 1000 V/µs,R

SOURCE

= 50 Ω,

diF/dt < 20 A/µs

3.3 3.3 V

Forward voltage IT= 5 A,tW= 100 µs 3 3 V

On-state voltage IT= -5 A,tW= 100 µs -3 -3 V

Holding current di/dt = +30 mA/ms -0.15 -0.15 A

dv/dt

Critical rate of rise of off-state voltage

Linear voltage ramp Maximum ramp value < 0.85V

DRM

-5 -5 kV/µs

Off-state current VD= -50 V -10 -10 µA

off

Off-state capacitance

f = 100 kHz,V

= 100 mV Third terminal voltage = 0 (see Note 5)

= 0, 150 240 130 240 pF

= -5 V 65 104 55 104 pF

= -50 V 30 48 25 48 pF

thermal characteristics

PARAMETER

TEST CONDITIONS

MIN TYP MAX UNIT

θJA

Junction to free air thermal resistance

tot

= 0.8 W,TA= 25°C

5 cm

, FR4 PCB

D Package 160

°C/WP Package 100

SL Package 105

Page 4

TISP1072F3, TISP1082F3 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

SEPTEMBER 1993 - REVISED SEPTEMBER 1997

PRODUCT INFORMATION

PARAMETER MEASUREMENT INFORMATION

Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR TERMINALS R AND G OR T AND G

Figure 2. VOLTAGE-CURRENT CHARACTERISTIC FOR TERMINALS R AND T

-v I

(BR)

(BR)M

DRM

TSM

TSP

(BO)

Quadrant I

Forward

Conduction

Characteristic

TSM

TSP

-i

Quadrant III

Switching

Characteristic

PMXXAC

-v I

(BR)

(BR)M

DRM

TSM

TSP

(BO)

Quadrant I

Switching

Characteristic

(BO)

(BR)

(BR)M

DRM

TSM

TSP

-i

Quadrant III

Switching

Characteristic

PMXXAA

Page 5

SEPTEMBER 1993 - REVISED SEPTEMBER 1997

TISP1072F3, TISP1082F3

DUAL ASYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

PRODUCT INFORMATION

TYPICAL CHARACTERISTICS

R and G, or T and G terminals

Figure 3. Figure 4.

Figure 5. Figure 6.

OFF-STATE CURRENT

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

- Off-State Current - µA

0·001

0·01

0·1

100

TC1LAF

JUNCTION TEMPERATURE

VD = -50 V

BREAKDOWN VOLTAGES

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

Negat ve Breakdown Vo tages - V

60.0

70.0

80.0

TC1LAL

JUNCTION TEMPERATURE

(BO)

(BR)

(BO)

(BR)M

(BR)

= 1 mA

'1072F3

'1082F3

ON-STATE CURRENT

VT - On-State Voltage - V

2 3 4 5 6 7 8 91 10

- On-State Current - A

100

TC1LAC

ON-STA TE VOLTAGE

-40°C150°C

25°C

FORWARD CURRENT

VF - Forward Voltage - V

2 3 4 5 6 7 8 91 10

- Forward Current - A

100

TC1LAE

FORWARD VOLTAGE

-40°C

150°C

25°C

Page 6

TISP1072F3, TISP1082F3 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

SEPTEMBER 1993 - REVISED SEPTEMBER 1997

PRODUCT INFORMATION

TYPICAL CHARACTERISTICS R and G, or T and G terminals

Figure 7. Figure 8.

Figure 9. Figure 10.

HOLDING CURR ENT & BREAKOVER CURRENT

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

, I

(BO)

- Holding Current, Breakover Current - A

0·07

0·08

0·09

0·1

0·2

0·3

0·4

0·5

0·6

0·7

0·8

0·9

1·0

TC1LAD

JUNCTION TEMPERA TURE

(BO)

NORMALISED BREAKOVER VOLTAGE

di/dt - Rate of Rise of Principle Current - A/µs

0·001 0·01 0·1 1 10 100

Normalised Breakover Voltage

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

1.9

2.0

TC1LAG

RATE OF RISE OF PRINCIPLE CURRENT

PEAK FORWARD RECOVERY VOLTAGE

di/dt - Rate of Rise of Principle Current - A/µs

0·001 0·01 0·1 1 10 100

FRM

- Peak Forward Recovery Voltage - V

0.0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

10.0

TC1LAH

RATE OF RISE OF PRINCIPLE CURRENT

OFF-STATE CA PACITANCE

R or T Terminal Voltage (Negative) - V

0·1 1 10

Off-State Capacitance - pF

100

TC1LAJ

R or T TERMINA L VOLTAGE (NEGATIVE)

'1072F3

'1082F3

200

Third Terminal = 0 to -50 V

Page 7

SEPTEMBER 1993 - REVISED SEPTEMBER 1997

TISP1072F3, TISP1082F3

DUAL ASYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

PRODUCT INFORMATION

TYPICAL CHARACTERISTICS

R and G, or T and G terminals

Figure 11. Figure 12.

Figure 13.

OFF-STATE CAPACITANCE

R or T Terminal Voltage (Positive) - V

0·01 0·1

Off-State Capacitance - pF

150

200

100

TC1LAK

R or T TERMINAL VOLTA GE (POSITIVE)

200

0·3

'1072F3

'1082F3

Third Terminal = 0 to -50 V

OFF-STATE CAPACITANCE

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

Off-State Capacitance - pF

100

TC1LAB

JUNCTION TEMPERATURE

500

Terminal Bias = 0

Terminal Bias = -50 V

'1072F3

'1082F3

'1072F3

'1082F3

Third Terminal = 0 to -50 V

SURGE CURRENT

Decay Time - µs

10 100 1000

Maximum Surge Current - A

100

1000

TC1LAA

DECAY TIME

Page 8

TISP1072F3, TISP1082F3 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

SEPTEMBER 1993 - REVISED SEPTEMBER 1997

PRODUCT INFORMATION

TYPICAL CHARACTERISTICS

R and T terminals

Figure 14. Figure 15.

Figure 16. Figure 17.

OFF-STATE CURRENT

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

- Off-State Current - µA

0·001

0·01

0·1

100

TC1LAN

JUNCTION TEMPERATURE

VD = ±50 V

BREAKDOWN VOLTAGES

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

Breakdown Vo tages - V

60.0

70.0

80.0

90.0

TC1LAM

JUNCTION TEMPERATURE

(BR)

= 1 mA

'1072F3

'1082F3

(BR)

(BO)

(BR)M

(BO)

(BR)

(BR)M

HOLDING CURRENT & BREAKOVER CURRENT

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

, I

(BO)

- Holding Current, Breakover Current - A

0·07

0·08

0·09

0·1

0·2

0·3

0·4

0·5

0·6

0·7

0·8

0·9

1·0

TC1LAO

JUNCTION TEMPERATURE

(BO)

NORMALISED BREAKOVER VOLTAGE

di/dt - Rate of Rise of Principle Current - A/µs

0·001 0·01 0·1 1 10 100

Normalised Breakover Voltage

1.0

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

1.9

2.0

TC1LAI

RATE OF RISE OF PRINCIPLE CU RRENT

Page 9

SEPTEMBER 1993 - REVISED SEPTEMBER 1997

TISP1072F3, TISP1082F3

DUAL ASYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

PRODUCT INFORMATION

THERMAL INFORMATION

TYPICAL CHARACTERISTICS

R and T terminals

Figure 18.

Figure 19. Figure 20.

OFF-STATE CAPACITANCE

Terminal Voltage - V

0·1 1 10

Off-State Capacitance - fF

100

TC1LAP

TERMINAL VOLTAGE

Both Voltage Polarities

D Package

P Package

SL Package

VG > VR or V

MAXIMUM NON-RECURRING 50 Hz CURRENT

t - Current Duration - s

0·1 1 10 100 1000

TRMS

- Maximum Non-Recurrent 50 Hz Current - A

CURRENT DURA TION

TI1LAA

GEN

= 250 Vrms

GEN

= 10 to 150 ΩΩ

D Package

SL Package

P Package

THERMAL RESPONSE

t - Power Pulse Duration - s

0·0001 0·001 0·01 0·1 1 10 100 1000

θJ

- Transient Thermal Impedance - °C/W

100

D Package

P Package

SL Package

TI1MAA

Page 10

TISP1072F3, TISP1082F3 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

SEPTEMBER 1993 - REVISED SEPTEMBER 1997

PRODUCT INFORMATION

APPLICATIONS INFORMATION

electrical characteristics

The electrical characteristics of a TISP are strongly dependent on junction temperature, TJ. Hence a characteristic value will depend on the junction temperature at the instant of measurement. The values given in this data sheet were measured on commercial testers, which generally minimise the temperature rise caused by testing. Application values may be calculated from the parameters’ temperature coefficient, the power dissipated and the thermal response curve ,Zθ(see M. J. Maytum, "Transient Suppressor Dynamic Parameters."TI Technical Journal, vol. 6, No. 4, pp.63-70, July-August 1989).

lightning surge

wave shape notation

Most lightning tests, used for equipment verification, specify a unidirectional sawtooth waveform which has an exponential rise and an exponential decay. Wave shapes are classified in terms of peak amplitude (voltage or current), rise time and a decay time to 50% of the maximum amplitude. The notation used for the wave shape is amplitude, rise time/decay time. A 50A, 5/310 µs wave shape would have a peak current value of 50 A, a rise time of 5 µs and a decay time of 31 0 µs. The TISP surge current graph comprehends the wave shapes of commonly used surges.

generators

There are three categories of surge generator type, single wave shape, combination wave shape and circuit defined. Single wave shape generators have essentially the same wave shape for the open circuit voltage and short circuit current (e.g. 10/1000 µs open circuit voltage and short circuit current). Combination generators have two wave shapes, one for the open circuit voltage and the other for the short circuit current (e.g. 1.2/50 µs open circuit voltage and 8/20 µs short circuit current) Circuit specified generators usually equate to a combination generator, although typically only the open circuit voltage waveshape is referenced (e.g. a 10/700 µs open circuit voltage generator typically produces a 5/310 µs short circuit current). If the combination or circuit defined generators operate into a finite resistance the wave shape produced is intermediate between the open circuit and short circuit values.

current rating

When the TISP switches into the on-state it has a very low impedance. As a result, although the surge wave shape may be defined in terms of open circuit voltage, it is the current wave shape that must be used to assess the required TISP surge capability. As an example, the CCITT IX K17 1.5 kV, 10/700 µs surge is changed to a 38 A, 5/310 µs waveshape when driving into a short circuit. Thus the TISP surge current capability, when directly connected to the generator, will be found for the CCITT IX K17 waveform at 310 µs on the surge graph and not 700 µs. Some common short circuit equivalents are tabulated below:

Any series resistance in the protected equipment will reduce the peak circuit current to less than the generators’ short circuit value. A 2 kV open circuit voltage, 50 A short circuit current generator has an effective output impedance of 40

Ω (2000/50). If the equipment has a series resistance of 25 Ω then the

surge current requirement of the TISP becomes 31 A (2000/65) and not 50 A.

STANDARD OPEN CIRCUIT

VOLTAGE

SHORT CIRCUIT

CURRENT

CCITT IX K17 1.5 kV, 10/700 µs 38 A, 5/310 µs CCITT IX K20 1 kV, 10/700 µs 25 A, 5/310 µs

RLM88 1.5 kV, 0.5/700 µ s 38 A, 0.2/310 µs

VDE 0433 2.0 kV, 10/700 µs 50 A, 5/200 µs

FTZ R12 2.0 kV, 10/700 µ s 50 A, 5/310 µs

Page 11

SEPTEMBER 1993 - REVISED SEPTEMBER 1997

TISP1072F3, TISP1082F3

DUAL ASYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

PRODUCT INFORMATION

APPLICATIONS INFORMATION

protection voltage

The protection voltage, (V

(BO)

), increases under lightning surge conditions due to thyristor regeneration. This increase is dependent on the rate of current rise, di/dt, when the TISP is clamping the voltage in its breakdown region. The V

(BO)

value under surge conditions can be estimated by multiplying the 50 Hz rate

(BO)

(250 V/ms) value by the normalised increase at the surge’s di/dt (Figure 8.) . An estimate of the di/dt

can be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance.

As an example, the CCITT IX K17 1.5 kV, 10/700 µs surge has an average dv/dt of 150 V/µs, but, as the rise is exponential, the initial dv/dt is higher, being in the region of 450 V/µs. The instantaneous generator output resistance is 25 Ω. If the equipment has an additional series resistance of 20 Ω, the total series resistance becomes 45 Ω. The maximum di/dt then can be estimated as 450/45 = 10 A/µs. In practice the measureddi/dt and protection voltage increase will be lower due to inductive effects and the finite slope

resistance of the TISP breakdown region.

capacitance

off-state capacitance

The off-state capacitance of a TISP is sensitive to junction temperature, TJ, and the bias voltage, comprising of the dc voltage, V

, and the ac voltage, Vd. All the capacitance values in this data sheet are measured

with an ac voltage of 100 mV. The typical 25°C variation of capacitance value with ac bias is shown in Figure

21. When V

>> Vd the capacitance value is independent on the value of Vd. The capacitance is essentially

constant over the range of normal telecommunication frequencies.

Figure 21.

NORMALISED CAPACITANCE

Vd - RMS AC Test Voltage - mV

1 10 100 1000

Normalised Capacitance

0.70

0.75

0.80

0.85

0.90

0.95

1.00

1.05

AIXXAA

Normalised to Vd = 100 mV DC Bias, VD = 0

RMS AC TEST VOLTAGE

Page 12

TISP1072F3, TISP1082F3 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

SEPTEMBER 1993 - REVISED SEPTEMBER 1997

PRODUCT INFORMATION

APPLICATIONS INFORMATION

longitudinal balance

Figure 22 shows a three terminal TISP with its equivalent "delta" capacitance Each capacitance, CTG, C

and CTR, is the true terminal pair capacitance measured with a three terminal or guarded capacitance bridge.

If wire R is biased at a larger potential than wire T then C

> CRG. Capacitance CTG is equivalent to a

capacitance of C

in parallel with the capacitive difference of (CTG- CRG). The line capacitive unbalance is

due to (C

- CRG) and the capacitance shunting the line is CTR+ CRG/2 .

Figure 22.

All capacitance measurements in this data sheet are three terminal guarded to allow the designer to accurately assess capacitive unbalance effects. Simple two terminal capacitance meters (unguarded third terminal) give false readings as the shunt capacitance via the third terminal is included.

Page 13

SEPTEMBER 1993 - REVISED SEPTEMBER 1997

TISP1072F3, TISP1082F3

DUAL ASYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

PRODUCT INFORMATION

D008 plastic small-outline package

This small-outline package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.

MECHANICAL DATA

5,21 (0.205) 4,60 (0.181)

NOTES: A. Leads are within 0,25 (0.010) radius of true position at maximum material condition. B. Body dimensions do not include mold flash or protrusion. C. Mold flash or protrusion shall not exceed 0,15 (0.006).

D. Lead tips to be planar within ±0,051 (0.002).

1,75 (0.069) 1,35 (0.053)

6,20 (0.244) 5,80 (0.228)

5,00 (0.197) 4,80 (0.189)

D008

7 6 5

432

4,00 (0.157) 3,81 (0.150)

7° NOM 3 Places

7° NOM 4 Places

0,51 (0.020) 0,36 (0.014)

8 Places

Pin Spacing

1,27 (0.050)

(see Note A)

6 Places

1,12 (0.044) 0,51 (0.020)

4° ± 4°

0,79 (0.031) 0,28 (0.011)

0,203 (0.008) 0,102 (0.004)

ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES

Designation per JEDEC Std 30:

PDSO-G8

0,50 (0.020) 0,25 (0.010)

x 45°NOM

0,229 (0.0090) 0,190 (0.0075)

MDXXAA

Page 14

TISP1072F3, TISP1082F3 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

SEPTEMBER 1993 - REVISED SEPTEMBER 1997

PRODUCT INFORMATION

P008 plastic dual-in-line package

This dual-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions The package is intended for insertion in mounting-hole rows on 7,62 (0.300) centers. Once the leads are compressed and inserted, sufficient tension is provided to secure the package in the board during soldering. Leads require no additional cleaning or processing when used in soldered assembly.

MECHANICAL DATA

1 2 3 4

7 6 5

10,2 (0.400) MAX

Index

Dot

1,78 (0.070) MAX

4 Places

5,08 (0.200)

MAX

0,51 (0.020)

MIN

2,54 (0.100) T.P.

6 Places

(see Note A)

0,533 (0.021) 0,381 (0.015)

8 Places

3,17 (0.125)

MIN

Seating

Plane

0,36 (0.014) 0,20 (0.008)

8 Places

105°

90°

8 Places

6,60 (0.260) 6,10 (0.240)

7,87 (0.310) 7,37 (0.290)

T.P.

ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES

P008

Designation per JEDEC Std 30:

PDIP-T8

NOTE A: Each pin centerline is located within 0,25 (0.010) of its true longitudinal position

MDXXABA

Page 15

SEPTEMBER 1993 - REVISED SEPTEMBER 1997

TISP1072F3, TISP1082F3

DUAL ASYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

PRODUCT INFORMATION

SL003 3-pin plastic single-in-line package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.

MECHANICAL DATA

NOTES: A. Each pin centerline is located within 0,25 (0.010) of its true longitudinal position.

B. Body molding flash of up to 0,15 (0.006) may occur in the package lead plane.

1,854 (0.073) MAX

0,711 (0.028) 0,559 (0.022)

3 Places

1 2 3

Pin Spacing

2,54 (0.100) T.P.

(see Note A)

2 Places

12,9 (0.492)

MAX

4,57 (0.180)

MAX

6,60 (0.260) 6,10 (0.240)

0,356 (0.014) 0,203 (0.008)

3 Places

SL003

10,2 (0.400) MAX

8,31 (0.327)

MAX

4,267 (0.168)

MIN

ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES

Index

Dot

MDXXAD

Page 16

TISP1072F3, TISP1082F3 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS

SEPTEMBER 1993 - REVISED SEPTEMBER 1997

PRODUCT INFORMATION

D008 tape dimensions

MECHANICAL DATA

D008 Package (8 pin SOIC) Single-Sprocket Tape

ALL LINEAR DIMENSIONS IN MILLIMETERS

6,30

6,50

11,70

12,305,45

5,55

1,50

1,60

3,90

4,10

7,95

8,05

1,95

2,05

0,8 MIN.

0 MIN.

0,40

2,0

2,2

Direction of Feed

ø 1,5 MIN.

Carrier Tape Embossment

Cover Tape

MDXXAT

NOTES: A. Taped devices are supplied on a reel of the following dimensions: Reel diameter: 330 +0,0/-4,0 mm

Reel hub diameter: 100 ±2,0 mm Reel axial hole: 13,0 ±0,2 mm

B. 2500 devices are on a reel.

Page 17

SEPTEMBER 1993 - REVISED SEPTEMBER 1997

TISP1072F3, TISP1082F3

DUAL ASYMMETRICAL TRANSIENT

VOLTAGE SUPPRESSORS

PRODUCT INFORMATION

IMPORTANT NOTICE

Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements.

PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used.

PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.