Datasheet TIPP112, TIPP111, TIPP110 Datasheet (Power Innovations)

● 20 W Pulsed Power Dissipation

● 100 V Capability

TIPP110, TIPP111, TIPP112

NPN SILICON POWER DARLINGTONS

MAY 1989 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK

LP PACKAGE

(TOP VIEW)

● 2 A Continuous Collector Current

● 4 A Peak Collector Current

E
C
B

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT

TIPP110

Collector-base voltage (I

Collector-emitter voltage (I

Emitter-base voltage V
Continuous collector current I
Peak collector current (see Note 1) I
Continuous base current I
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) P
Pulsed power dissipation (see Note 3) P
Operating junction temperature range T
Storage temperature range T
Lead temperature 3.2 mm from case for 10 seconds T

NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.

2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
= 20 V, IC = 1 A, PW = 10 ms, duty cycle ≤ 2%.

3. V

CE

E

= 0)

= 0)

B

TIPP111
TIPP112
TIPP110
TIPP111
TIPP112

V

V

CBO

CEO

EBO

C

CM

B
tot

T

j

stg

L

1
2
3

MDTRAB

60
80

100

60
80

100

5 V
2 A
4 A

50 mA

0.8 W
20 W

-55 to +150 °C

-55 to +150 °C
260 °C

V

V

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.

1

TIPP110, TIPP111, TIPP112
NPN SILICON POWER DARLINGTONS

MAY 1989 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

TIPP110
TIPP111
TIPP112
TIPP110
TIPP111
TIPP112
TIPP110
TIPP111
TIPP112

(see Notes 4 and 5)

V

(BR)CEO

I

CEO

I

CBO

I

EBO

h

V

CE(sat)

V

V

Collector-emitter
breakdown voltage

Collector-emitter
cut-off current

Collector-base
cut-off current

Emitter cut-off
current
Forward current

FE

transfer ratio
Collector-emitter
saturation voltage
Base-emitter

BE

voltage
Parallel diode

EC

forward voltage

= 10 mA

I

C

IB = 0
(see Note 4)
V

= 30 V

CE

= 40 V

V

CE

= 50 V

V

CE

V

= 60 V

CE

= 80 V

V

CE

= 100 V

V

CE

= 5 V IC= 0 2 mA

V

EB

VCE = 4 V

= 4 V

V

CE

= 8 mA IC= 2 A (see Notes 4 and 5) 2.5 V

I

B

= 4 V IC= 2 A (see Notes 4 and 5) 2.8 V

V

CE

= 4 A IB= 0 (see Notes 4 and 5) 3.5 V

I

E

V

V

V

I

I

I

I

I

BE
BE

BE
B
B
B

C
C

= 0
= 0

= 0
= 0
= 0
= 0

= 1 A
= 2 A

NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts and located
within 3.2 mm from device body.

60
80

100

1000

500

V

2
2

mA
2
1
1

mA
1

PRODUCT INFORMATION

2

TIPP110, TIPP111, TIPP112

NPN SILICON POWER DARLINGTONS

MAY 1989 - REVISED MARCH 1997

MECHANICAL DATA

LP003 (TO-92)
3-pin cylindical plastic package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.

LP003 (TO-92)

3,43 MIN.

Seating Plane

(see Note A)

5,21
4,44

2,67
2,03

1,27

0,56
0,40

LP003 Falls Within JEDEC

TO-226AA Dimensions

4,19
3,17

2,67
2,03

5,34
4,32

12,7 MIN.

1

3

1,40
1,14

2,67
2,41

NOTE A: Lead dimensions are not controlled in this area.

2

ALL LINEAR DIMENSIONS IN MILLIMETERS

PRODUCT INFORMATION

0,41
0,35

MDXXAX

3

TIPP110, TIPP111, TIPP112
NPN SILICON POWER DARLINGTONS

MAY 1989 - REVISED MARCH 1997

MECHANICAL DATA

LP003 (TO-92)
3-pin cylindical plastic package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.

LP003 (TO-92) - Formed Leads Version

5,21
4,44

3,43 MIN.

2,67
2,03

0,56
0,40

1

LP003 Falls Within JEDEC

TO-226AA Dimensions

4,19
3,17

2,67
2,03

5,34
4,32

4,00 MAX.

2 3

2,90
2,40

ALL LINEAR DIMENSIONS IN MILLIMETERS

PRODUCT INFORMATION

2,90
2,40

0,41
0,35

MDXXAR

4

LPR
tape dimensions

LP Package (TO-92) Tape (Formed Lead Version)

5,21
4,44

3,43 MIN.

2,67
2,03

MECHANICAL DATA

5,34
4,32

4,00 MAX.

0,56
0,40

TIPP110, TIPP111, TIPP112

NPN SILICON POWER DARLINGTONS

MAY 1989 - REVISED MARCH 1997

4,19
3,17

2,67
2,03

0,41
0,35

32,00
23,00

27,68
17,66

16,50
15,50

13,70
11,70

2,50 MIN.

11,00

8,50

2,90
2,40

6,75
5,95

ALL LINEAR DIMENSIONS IN MILLIMETERS

13,00
12,40

2,90
2,40

9,75
8,50

19,00

5,50

ø

0,50
0,00

19,00
17,50

4,30
3,70

MDXXAS

PRODUCT INFORMATION

5

TIPP110, TIPP111, TIPP112
NPN SILICON POWER DARLINGTONS

MAY 1989 - REVISED MARCH 1997

IMPORTANT NOTICE

Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.

PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.

PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.

Copyright © 1997, Power Innovations Limited

PRODUCT INFORMATION

6