Datasheet TIPL762A, TIPL762 Datasheet (Power Innovations)

TIPL762, TIPL762A

NPN SILICON POWER TRANSISTORS

● Rugged Triple-Diffused Planar Construction

SOT-93 PACKAGE

● 6 A Continuous Collector Current

● Operating Characteristics Fully Guaranteed

B

(TOP VIEW)

1

at 100°C

● 1000 Volt Blocking Capability

● 120 W at 25°C Case Temperature

C

E

Pin 2 is in electrical contact with the mounting base.

2

3

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT

Collector-base voltage (I

Collector-emitter voltage (V

Collector-emitter voltage (I Emitter-base voltage V

Continuous collector current I Peak collector current (see Note 1) I Continuous device dissipation at (or below) 25°C case temperature P Operating junction temperature range T Storage temperature range T

NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%.

E

= 0)

BE

= 0)

B

= 0)

TIPL762 TIPL762A TIPL762 TIPL762A TIPL762 TIPL762A

V

CBO

CES

CEO

EBO

C

CM

tot

j

stg

MDTRAA

850

1000

850

1000

400 450

10 V

6 A

12 A

120 W

-65 to +150 °C

V

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.

1

TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS

AUGUST 1978 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

V

CEO(sus)

I

CES

I

CEO

I

EBO

h

V

CE(sat)

V

BE(sat)

C

Collector-emitter sustaining voltage

Collector-emitter cut-off current

Collector cut-off current Emitter cut-off current Forward current

FE

transfer ratio

Collector-emitter saturation voltage

Base-emitter saturation voltage

Current gain

f

t

bandwidth product Output capacitance VCB = 20 V IE= 0 f = 0.1 MHz 105 pF

ob

= 100 mA L = 25 mH (see Note 2)

I

C

V

= 850 V

CE

= 1000 V

V

CE

= 850 V

V

CE

= 1000 V

V

CE

VCE= 400 V

= 450 V

V

CE

= 10 V IC= 0 1 mA

V

EB

= 5 V IC= 0.5 A (see Notes 3 and 4) 20 60

V

CE

I

= 0.4 A

B

= 0.8 A

I

B

= 1.2 A

I

B

= 1.2 A

I

B

I

= 0.4 A

B

= 0.8 A

I

B

= 1.2 A

I

B

= 1.2 A

I

B

= 10 V IC= 0.5 A f = 1 MHz 6 MHz

V

CE

NOTES: 2. Inductive loop switching measurement.

3. These parameters must be measured using pulse techniques, t

4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

V

BE

V

BE

V

BE

V

BE

I

= 0

B

= 0

I

B

I

= 2 A

C

= 4 A

I

C

= 6 A

I

C

= 6 A

I

C

I

= 2 A

C

= 4 A

I

C

= 6 A

I

C

= 6 A

I

C

= 0 = 0 = 0 = 0

T

= 100°C

C

= 100°C

T

C

(see Notes 3 and 4)

TC = 100°C

(see Notes 3 and 4)

TC = 100°C

= 300 µs, duty cycle ≤ 2%.

p

TIPL762 TIPL762A TIPL762 TIPL762A TIPL762 TIPL762A TIPL762 TIPL762A

400 450

50

50 200 200

50

0.5

1.0

2.5

5.0

1.1

1.3

1.5

1.4

V

µA

V

thermal characteristics

PARAMETER MIN TYP MAX UNIT

R

Junction to case thermal resistance 1.25 °C/W

θJC

inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS

Voltage storage time

t

sv

t

Voltage rise time 200 ns

rv

Current fall time 150 ns

t

fi

Current tail time 50 ns

t

ti

Cross over time 300 ns

t

xo

Voltage storage time

t

sv

t

Voltage rise time 300 ns

rv

Current fall time 150 ns

t

fi

Current tail time 50 ns

t

ti

Cross over time 500 ns

t

xo

†

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

I

C

V

BE(off)

I

C

V

BE(off)

= 6 A

= -10 V

I

= 1.2 A (see Figures 1 and 2)

B(on)

I

= 1.2 A

B(on)

= 100°C

T

C

†

(see Figures 1 and 2)

MIN TYP MAX UNIT

2.5 µs

3 µs

PRODUCT INFORMATION

2

NPN SILICON POWER TRANSISTORS

100

B. Resistors must be noninductive types.

AUGUST 1978 - REVISED MARCH 1997

PARAMETER MEASUREMENT INFORMATION

33

ΩΩ

BY205-400

+5V

D45H11

TIPL762, TIPL762A

A - B = t B - C = t D - E = t E - F = t B - E = t

V Gen

68

ΩΩ

270

ΩΩ

Adjust pw to obtain I

For IC < 6 A VCC = 50 V

≥ 6 A VCC = 100 V

For I

C

sv rv fi ti xo

1 pF

1 k

µµ

F

0.02

BY205-400

C

ΩΩ

+5V

33

1 k

ΩΩ

BY205-400

2N2222

2N2904

47

ΩΩ

5X BY205-400

ΩΩ

RB

(on)

TUT

D44H11

V

BE(off)

Figure 1. Inductive-Load Switching Test Circuit

I

B(on)

I

B

A (90%)

C

90%

180

BY205-400

Base Current

H

µµ

V

clamp

v

cc

= 400 V

B

V

CE

I

C(on)

NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: tr < 15 ns, Rin > 10 Ω, Cin < 11.5 pF.

10%

D (90%)

Collector Voltage

E (10%)

Collector Current

F (2%)

Figure 2. Inductive-Load Switching Waveforms

PRODUCT INFORMATION

3

TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS

AUGUST 1978 - REVISED MARCH 1997

TYPICAL CHARACTERISTICS

TYPICAL DC CURRENT GAIN

vs

COLLECTOR CURRENT

100

VCE = 5 V

10

- Typical DC Current Gain

FE

h

1·0

0·1 1·0 10

IC - Collector Current - A

TC = 125°C TC = 25°C TC = -65°C

Figure 3. Figure 4.

TCP762AE

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

BASE CURRENT

5·0

4·0

3·0

2·0

1·0

- Collector-Emitter Saturation Voltage - V

CE(sat)

V

0

0 0·5 1·0 1·5 2·0 2·5

IB - Base Current - A

TCP762AH

IC = 1 A IC = 2 A IC = 4 A IC = 6 A TC = 25°C

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

BASE CURRENT

5·0

4·0

3·0

2·0

1·0

- Collector-Emitter Saturation Voltage - V

CE(sat)

V

0

0 0·5 1·0 1·5 2·0 2·5

IB - Base Current - A

TCP762AI

IC = 1 A IC = 2 A IC = 4 A IC = 6 A TC = 100°C

Figure 5. Figure 6.

BASE-EMITTER SATURATION VOLTAGE

vs

BASE CURRENT

1·2

TC = 25°C

1·1

1·0

0·9

- Base-Emitter Saturation Voltage - V 0·8

BE(sat)

V

0·7

0 0·2 0·4 0·6 0·8 1·0 1·2 1·4 1·6 1·8 2·0

IB - Base Current - A

TCP762AJ

IC = 6 A IC = 4 A IC = 2 A IC = 1 A

PRODUCT INFORMATION

4

TYPICAL CHARACTERISTICS

COLLECTOR CUT-OFF CURRENT

CASE TEMPERATURE

10

1·0

TIPL762A VCE = 1000 V

0·1

- Collector Cut-off Current - µA

0·01

CES

I

TIPL762, TIPL762A

NPN SILICON POWER TRANSISTORS

AUGUST 1978 - REVISED MARCH 1997

vs

TCP762AF

TIPL762 VCE = 850 V

0·001

-80 -60 -40 -20 0 20 40 60 80 100 120 140 TC - Case Temperature - °C

Figure 7.

MAXIMUM SAFE OPERATING REGIONS

MAXIMUM FORWARD-BIAS

SAFE OPERATING AREA

100

10

1·0

- Collector Current - A

C

I

0.1 tp = 100 µµs

tp = 1 ms tp = 10 ms DC Operation

0·01

1·0 10 100 1000

VCE - Collector-Emitter Voltage - V

TIPL762 TIPL762A

SAP762AB

PRODUCT INFORMATION

Figure 8.

5

TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS

AUGUST 1978 - REVISED MARCH 1997

THERMAL INFORMATION

THERMAL RESPONSE JUNCTION TO CASE

POWER PULSE DURATION

1·0

50%

20%

10%

0·1

5%

2%

1%

0·01

θ

θJC

θ

θJC

0·001

10

0%

-5

- Normalised Transient Thermal Impedance

/ R Z

vs

duty cycle = t1/t2 Read time at end of t1,

Z

T

- TC = P

10

J(max)

-4

D(peak)

10

-3

t1 - Power Pulse Duration - s

θθJC

·

( )

R

θθJC

10

t1 t2

-2

TCP762AG

· R

θθJC(max)

10

-1

Figure 9.

PRODUCT INFORMATION

6

TIPL762, TIPL762A

NPN SILICON POWER TRANSISTORS

AUGUST 1978 - REVISED MARCH 1997

MECHANICAL DATA

SOT-93 3-pin plastic flange-mount package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.

SOT-93

4,1

ø

4,0

12,2 MAX.

1,30 1,10

1 2

15,2 14,7

11,1 10,8

4,90 4,70

1,37 3,95 4,15

16,2 MAX.

31,0 TYP.

18,0 TYP.

3

1,17

0,78 0,50

2,50 TYP.

ALL LINEAR DIMENSIONS IN MILLIMETERS

NOTE A: The centre pin is in electrical contact with the mounting tab.

PRODUCT INFORMATION

MDXXAW

7

TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS

AUGUST 1978 - REVISED MARCH 1997

IMPORTANT NOTICE

Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements.

PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used.

PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.

PRODUCT INFORMATION

8