Datasheet TIPL761C, TIPL761B Datasheet (Power Innovations)

TIPL761B, TIPL761C

NPN SILICON POWER TRANSISTORS

MAY 1989 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK

● Rugged Triple-Diffused Planar Construction

SOT-93 PACKAGE

● 4 A Continuous Collector Current

● Operating Characteristics Fully Guaranteed

B

(TOP VIEW)

1

at 100°C

● 1200 Volt Blocking Capability

● 100 W at 25°C Case Temperature

C

E

Pin 2 is in electrical contact with the mounting base.

2

3

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING SYMBOL VALUE UNIT

Collector-base voltage (I

Collector-emitter voltage (V

Collector-emitter voltage (I
Emitter-base voltage V

Continuous collector current I
Peak collector current (see Note 1) I
Continuous device dissipation at (or below) 25°C case temperature P
Operating junction temperature range T
Storage temperature range T

NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%.

E

= 0)

BE

= 0)

B

= 0)

TIPL761B
TIPL761C
TIPL761B
TIPL761C
TIPL761B
TIPL761C

V

V

V

CBO

CES

CEO

EBO

C

CM

tot

j

stg

MDTRAA

1100
1200
1100
1200

500
550

10 V

4 A
8 A

100 W

-65 to +150 °C

-65 to +150 °C

V

V

V

PRODUCT INFORMATION

Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.

1

TIPL761B, TIPL761C
NPN SILICON POWER TRANSISTORS

MAY 1989 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

V

CEO(sus)

I

CES

I

CEO

I

EBO

h

V

CE(sat)

V

BE(sat)

C

Collector-emitter
sustaining voltage

Collector-emitter
cut-off current

Collector cut-off
current
Emitter cut-off
current
Forward current

FE

transfer ratio
Collector-emitter

saturation voltage

Base-emitter
saturation voltage

Current gain

f

t

bandwidth product
Output capacitance VCB = 20 V IE= 0 f = 0.1 MHz 110 pF

ob

= 10 mA L = 25 mH (see Note 2)

I

C

V

= 1100 V

CE

= 1200 V

V

CE

= 1100 V

V

CE

= 1200 V

V

CE

VCE= 500 V

= 550 V

V

CE

= 10 V IC= 0 1 mA

V

EB

= 5 V IC= 0.5 A (see Notes 3 and 4) 20 60

V

CE

I

= 0.4 A

B

= 0.6 A

I

B

= 0.6 A

I

B

I

= 0.4 A

B

= 0.6 A

I

B

= 0.6 A

I

B

= 10 V IC= 0.5 A f = 1 MHz 12 MHz

V

CE

NOTES: 2. Inductive loop switching measurement.

3. These parameters must be measured using pulse techniques, t

4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

V

BE

V

BE

V

BE

V

BE

I

= 0

B

= 0

I

B

I

= 2 A

C

= 3 A

I

C

= 3 A

I

C

I

= 2 A

C

= 3 A

I

C

= 3 A

I

C

= 0
= 0
= 0
= 0

T

= 100°C

C

= 100°C

T

C

(see Notes 3 and 4)
TC = 100°C

(see Notes 3 and 4)
TC = 100°C

= 300 µs, duty cycle ≤ 2%.

p

TIPL761B
TIPL761C
TIPL761B
TIPL761C
TIPL761B
TIPL761C
TIPL761B
TIPL761C

500
550

50

50
200
200

50

50

1.0

2.5

5.0

1.2

1.4

1.3

V

µA

µA

V

V

thermal characteristics

PARAMETER MIN TYP MAX UNIT

R

Junction to case thermal resistance 1.25 °C/W

θJC

inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER TEST CONDITIONS

Voltage storage time

t

sv

t

Voltage rise time 300 ns

rv

Current fall time 250 ns

t

fi

Current tail time 150 ns

t

ti

Cross over time 400 ns

t

xo

Voltage storage time

t

sv

t

Voltage rise time 500 ns

rv

Current fall time 250 ns

t

fi

Current tail time 150 ns

t

ti

Cross over time 750 ns

t

xo

†

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

IC = 3 A
V

BE(off)

= 3 A

I

C

V

BE(off)

= -5 V

= -5 V

I

= 0.6 A (see Figures 1 and 2)

B(on)

I

= 0.6 A

B(on)

= 100°C

T

C

†

(see Figures 1 and 2)

MIN TYP MAX UNIT

2.5 µs

3 µs

PRODUCT INFORMATION

2

NPN SILICON POWER TRANSISTORS

100

B. Resistors must be noninductive types.

PARAMETER MEASUREMENT INFORMATION

33

ΩΩ

BY205-400

+5V

D45H11

TIPL761B, TIPL761C

MAY 1989 - REVISED MARCH 1997

A - B = t
B - C = t
D - E = t
E - F = t
B - E = t

V Gen

68

ΩΩ

270

ΩΩ

Adjust pw to obtain I

For IC < 6 A VCC = 50 V

≥ 6 A VCC = 100 V

For I

C

sv
rv
fi
ti
xo

1 pF

1 k

µµ

F

0.02

BY205-400

C

ΩΩ

+5V

33

1 k

1 k

ΩΩ

ΩΩ

ΩΩ

BY205-400

2N2222

2N2904

47

ΩΩ

5X BY205-400

ΩΩ

RB

(on)

TUT

D44H11

V

BE(off)

Figure 1. Inductive-Load Switching Test Circuit

I

B(on)

I

B

A (90%)

C

90%

180

BY205-400

Base Current

H

µµ

V

clamp

v

cc

= 400 V

B

V

CE

I

C(on)

NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: tr < 15 ns, Rin > 10 Ω, Cin < 11.5 pF.

10%

D (90%)

Collector Voltage

E (10%)

Collector Current

F (2%)

Figure 2. Inductive-Load Switching Waveforms

PRODUCT INFORMATION

3

TIPL761B, TIPL761C
NPN SILICON POWER TRANSISTORS

MAY 1989 - REVISED MARCH 1997

TYPICAL CHARACTERISTICS

TYPICAL DC CURRENT GAIN

vs

COLLECTOR CURRENT

100

10

- Typical DC Current Gain

FE

h

1·0

0·1 1·0 10

IC - Collector Current - A

TC = 125°C
TC = 25°C
TC = -65°C

VCE = 5 V

Figure 3. Figure 4.

TCP741AA

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

BASE CURRENT

5·0

4·0

3·0

2·0

1·0

- Collector-Emitter Saturation Voltage - V

CE(sat)

V

0

0 0·5 1·0 1·5 2·0

IB - Base Current - A

TCP741AB

TC = 25°C
TC = 100°C

IC = 4 A
IC = 3 A
IC = 2 A
IC = 1 A

BASE-EMITTER SATURATION VOLTAGE

vs

BASE CURRENT

1·25

TC = 25°C

1·15

1·05

0·95

- Base-Emitter Saturation Voltage - V
0·85

BE(sat)

V

0·75

0 0·2 0·4 0·6 0·8 1·0 1·2 1·4 1·6

IB - Base Current - A

Figure 5. Figure 6.

TCP741AC

IC = 4 A
IC = 3 A
IC = 2 A
IC = 1 A

COLLECTOR CUT-OFF CURRENT

vs

CASE TEMPERATURE

10

1·0

TIPL761C
VCE = 1200 V

0·1

TIPL761B

- Collector Cut-off Current - µA

0·01

CES

I

0·001

-60 -30 0 30 60 90 120
TC - Case Temperature - °C

VCE = 1100 V

TCP741AN

PRODUCT INFORMATION

4

NPN SILICON POWER TRANSISTORS

Z

/R

- Normalised Transient Thermal Impedance

MAXIMUM SAFE OPERATING REGIONS

MAXIMUM FORWARD-BIAS

SAFE OPERATING AREA

10

1·0

- Collector Current - A

0.1

C

I

tp = 10 µµs
tp = 100 µµs
tp = 1 ms
tp = 10 ms
DC Operation

0·01

TIPL761B
TIPL761C

1·0 10 100 1000

VCE - Collector-Emitter Voltage - V

SAP741AC

TIPL761B, TIPL761C

MAY 1989 - REVISED MARCH 1997

Figure 7.

THERMAL INFORMATION

THERMAL RESPONSE JUNCTION TO CASE

vs

POWER PULSE DURATION

1·0

50%

20%

10%
5%

0·1

0%

duty cycle = t1/t2

θ

θJC

θ

θJC

0·01

-5

10

Read time at end of t1,
T

- TC = P

10

J(max)

-4

10

D(peak)

-3

10

t1 - Power Pulse Duration - s

Z

θθJC

·

( )

R

θθJC

-2

t1
t2

10

TCP741AE

· R

θθJC(max)

-1

10

0

PRODUCT INFORMATION

Figure 8.

5

TIPL761B, TIPL761C
NPN SILICON POWER TRANSISTORS

MAY 1989 - REVISED MARCH 1997

MECHANICAL DATA

SOT-93
3-pin plastic flange-mount package

This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.

SOT-93

4,1

ø

4,0

12,2 MAX.

1,30
1,10

1 2

15,2
14,7

11,1
10,8

4,90
4,70

1,37
3,95
4,15

16,2 MAX.

31,0 TYP.

18,0 TYP.

3

1,17

0,78
0,50

2,50 TYP.

ALL LINEAR DIMENSIONS IN MILLIMETERS

NOTE A: The centre pin is in electrical contact with the mounting tab.

PRODUCT INFORMATION

6

MDXXAW

TIPL761B, TIPL761C

NPN SILICON POWER TRANSISTORS

MAY 1989 - REVISED MARCH 1997

IMPORTANT NOTICE

Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.

PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.

PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.

PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.

Copyright © 1997, Power Innovations Limited

PRODUCT INFORMATION

7